公开(公告)号：US09748132B2

公开(公告)日：2017-08-29

申请号：US13427281

申请日：2012-03-22

申请人： Koichiro Harada ,  Noriaki Michita ,  Tatsushi Ueda ,  Takayuki Sato

发明人： Koichiro Harada ,  Noriaki Michita ,  Tatsushi Ueda ,  Takayuki Sato

IPC分类号： C23C16/00 ,  H01L21/687 ,  H01J37/32 ,  H01L21/67 ,  H01L21/68

CPC分类号： H01L21/68742 ,  H01J37/32715 ,  H01J37/32724 ,  H01J37/32853 ,  H01J37/32871 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67282 ,  H01L21/68 ,  H01L21/6875

摘要： A substrate supporting member provided in a processing chamber for processing the substrate and configured to support the substrate, has on its upper surface, a protruding area that supports an edge side of the substrate from below; a recessed area provided inside of the protruding area so as not to be brought into contact with the substrate supported by the protruding area; and an auxiliary protruding area formed lower than the protruding area and provided in the recessed area, and has a flow passage that is communicated with inside of the recessed area, for escaping gas between the substrate and the substrate supporting member from the recessed area side.

公开(公告)号：US20070062646A1

公开(公告)日：2007-03-22

申请号：US11601697

申请日：2006-11-20

申请人： Unryu Ogawa ,  Tetsuya Takagaki ,  Akinori Ishii ,  Tatsushi Ueda ,  Takayuki Sato

发明人： Unryu Ogawa ,  Tetsuya Takagaki ,  Akinori Ishii ,  Tatsushi Ueda ,  Takayuki Sato

IPC分类号： H01L21/306

CPC分类号： H01J37/3244 ,  H01J2237/335 ,  H01L21/31116 ,  H01L21/67069

摘要： A substrate processing apparatus includes a processing chamber and a gas supply line, wherein a natural oxide film removing gas including a first gas activated by a second gas activated by a plasma discharge is supplied to the processing chamber through the gas supply line to remove a natural oxide film on a wafer, and wherein the first gas and the second gas are supplied to the gas supply line along a first direction and a second direction and an angle between the first and the second direction ranges from about 90° to 180°.

摘要翻译： 基板处理装置包括处理室和气体供给管线，其中包括由等离子体放电激活的第二气体激活的第一气体的天然氧化物膜去除气体通过气体供给管线供给到处理室，以去除天然气 氧化膜，并且其中所述第一气体和所述第二气体沿着第一方向和第二方向被供应到所述气体供应管线，并且所述第一和第二方向之间的角度范围为约90°至180°。

公开(公告)号：US20090169768A1

公开(公告)日：2009-07-02

申请号：US12320767

申请日：2009-02-04

申请人： Tatsushi Ueda ,  Tadashi Terasaki ,  Unryu Ogawa ,  Akito Hirano

发明人： Tatsushi Ueda ,  Tadashi Terasaki ,  Unryu Ogawa ,  Akito Hirano

IPC分类号： H05H1/24 ,  C23C16/54

CPC分类号： H01L21/02236 ,  C23C16/50 ,  C23F1/00 ,  C23F1/08 ,  H01L21/0223 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/28247 ,  H01L21/28273

摘要： A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed.The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen (O2) or oxygen-containing gas supplied to a processing chamber to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the processing chamber to form a plasma discharge, and processing the substrate by the hydrogen plasma.

摘要翻译： 可以适当地氧化基板，同时抑制基板的氧化。 本发明包括通过使供给到处理室的氢（H 2）气和氧气（O 2）或含氧气体的混合气体形成等离子体放电来产生混合等离子体的步骤，并通过混合 等离子体; 以及通过使供给到处理室的氢（H2）气体形成等离子体放电而产生氢等离子体的步骤，以及通过氢等离子体处理衬底。

公开(公告)号：US20080138994A1

公开(公告)日：2008-06-12

申请号：US11886529

申请日：2006-03-14

申请人： Tatsushi Ueda ,  Tadashi Terasaki ,  Unryu Ogawa ,  Akito Hirano

发明人： Tatsushi Ueda ,  Tadashi Terasaki ,  Unryu Ogawa ,  Akito Hirano

IPC分类号： H01L21/00

CPC分类号： H01L21/02236 ,  C23C16/50 ,  C23F1/00 ,  C23F1/08 ,  H01L21/0223 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/28247 ,  H01L21/28273

摘要： A starting substrate can be appropriately oxidized, while oxidation of the starting substrate can be suppressed.The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen (O2) or oxygen-containing gas supplied to a starting substrate to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the starting substrate to form a plasma discharge, and processing the starting substrate by the hydrogen plasma.

摘要翻译： 可以适当地氧化起始衬底，同时抑制起始衬底的氧化。 本发明包括通过使氢（H 2/2）气体和氧（O 2 2 N）的混合气体或供给到 起始衬底以形成等离子体放电，并通过混合等离子体处理起始衬底; 以及通过使供给到起始衬底的氢（H 2/2 N）气体形成等离子体放电而产生氢等离子体的步骤，以及通过氢等离子体处理起始衬底。

公开(公告)号：US08334215B2

公开(公告)日：2012-12-18

申请号：US12320767

申请日：2009-02-04

申请人： Tatsushi Ueda ,  Tadashi Terasaki ,  Unryu Ogawa ,  Akito Hirano

发明人： Tatsushi Ueda ,  Tadashi Terasaki ,  Unryu Ogawa ,  Akito Hirano

IPC分类号： H01L21/302

CPC分类号： H01L21/02236 ,  C23C16/50 ,  C23F1/00 ,  C23F1/08 ,  H01L21/0223 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/28247 ,  H01L21/28273

摘要： A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed. The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen(O2) or oxygen/containing gas supplied to a processing chamber to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the processing chamber to form a plasma discharge, and processing the substrate by the hydrogen plasma.

摘要翻译： 可以适当地氧化基板，同时抑制基板的氧化。 本发明包括通过使供给到处理室的氢（H 2）气和氧气（O 2）或含氧气体的混合气体形成等离子体放电来产生混合等离子体的步骤，并通过混合 等离子体; 以及通过使供给到处理室的氢（H2）气体形成等离子体放电而产生氢等离子体的步骤，以及通过氢等离子体处理衬底。

公开(公告)号：US20080124941A1

公开(公告)日：2008-05-29

申请号：US11896231

申请日：2007-08-30

申请人： Tatsushi Ueda

发明人： Tatsushi Ueda

IPC分类号： H01L21/38 ,  C23C16/513

CPC分类号： C23C8/36 ,  C23C8/02 ,  C23C8/34 ,  H01L21/2236 ,  H01L29/66477 ,  H01L29/78

摘要： To provide a manufacturing method of a semiconductor device for forming a diffusion layer by diffusing phosphorus atoms on a surface of a silicon substrate on which resist is applied, including the step of forming a diffusion layer, with a temperature of the silicon substrate maintained lower than a deterioration temperature of the resist.

摘要翻译： 为了提供一种用于通过在施加有抗蚀剂的硅衬底的表面上扩散磷原子形成扩散层的半导体器件的制造方法，包括形成扩散层的步骤，硅衬底的温度保持低于 抗蚀剂的劣化温度。

公开(公告)号：US08066894B2

公开(公告)日：2011-11-29

申请号：US11886529

申请日：2006-03-14

申请人： Tatsushi Ueda ,  Tadashi Terasaki ,  Unryu Ogawa ,  Akito Hirano

发明人： Tatsushi Ueda ,  Tadashi Terasaki ,  Unryu Ogawa ,  Akito Hirano

IPC分类号： B44C1/22

CPC分类号： H01L21/02236 ,  C23C16/50 ,  C23F1/00 ,  C23F1/08 ,  H01L21/0223 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/28247 ,  H01L21/28273

摘要： A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed.The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen (O2) or oxygen-containing gas supplied to a processing chamber to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the processing chamber to form a plasma discharge, and processing the substrate by the hydrogen plasma.

摘要翻译： 可以适当地氧化基板，同时抑制基板的氧化。 本发明包括通过使供给到处理室的氢（H 2）气和氧气（O 2）或含氧气体的混合气体形成等离子体放电来产生混合等离子体的步骤，并通过混合 等离子体; 以及通过使供给到处理室的氢（H2）气体形成等离子体放电而产生氢等离子体的步骤，以及通过氢等离子体处理衬底。

公开(公告)号：US07651954B2

公开(公告)日：2010-01-26

申请号：US11896231

申请日：2007-08-30

申请人： Tatsushi Ueda

发明人： Tatsushi Ueda

IPC分类号： H01L21/31

CPC分类号： C23C8/36 ,  C23C8/02 ,  C23C8/34 ,  H01L21/2236 ,  H01L29/66477 ,  H01L29/78

摘要： To provide a manufacturing method of a semiconductor device for forming a diffusion layer by diffusing phosphorus atoms on a surface of a silicon substrate on which resist is applied, including the step of forming a diffusion layer, with a temperature of the silicon substrate maintained lower than a deterioration temperature of the resist.

摘要翻译： 为了提供一种用于通过在施加有抗蚀剂的硅衬底的表面上扩散磷原子形成扩散层的半导体器件的制造方法，包括形成扩散层的步骤，硅衬底的温度保持低于 抗蚀剂的劣化温度。