公开(公告)号：US06888870B2

公开(公告)日：2005-05-03

申请号：US10210656

申请日：2002-07-31

申请人： Koji Makita ,  Hideto Adachi ,  Toshiya Kawata ,  Hiroshi Asaka ,  Osamu Imafuji ,  Toshiya Fukuhisa ,  Akira Takamori

发明人： Koji Makita ,  Hideto Adachi ,  Toshiya Kawata ,  Hiroshi Asaka ,  Osamu Imafuji ,  Toshiya Fukuhisa ,  Akira Takamori

IPC分类号： H01S5/16 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/00

CPC分类号： H01S5/2231 ,  H01S5/2054 ,  H01S5/2081 ,  H01S5/2206 ,  H01S5/222 ,  H01S5/3211

摘要： A semiconductor laser has a first conduction-type cladding layer, an active layer, and a second conduction-type cladding layer formed on a first conduction-type semiconductor substrate. The second conduction-type cladding layer has a mesa-type stripe-shaped recessed portion in at least four spots, so as to form a central ridge portion, which constitutes a ridge-type current confinement portion, and two or more lateral ridge portions, which are positioned on both sides of the central ridge portion, have a height larger than to that of the central ridge portion, and include the second conduction-type cladding layer. An insulation film with a lower refractive index than the second conduction-type cladding layer is formed in a pair of stripes disposed respectively in the regions from the side surface of the second conduction-type cladding layer on both side surfaces of the central ridge portion toward the outside. The insulation film is not formed on the central ridge portion.

摘要翻译： 半导体激光器具有形成在第一导电型半导体基板上的第一导电型包覆层，有源层和第二导电型包覆层。 第二导电型包覆层在至少四个点中具有台面状的条状凹部，以形成构成脊型电流限制部的中心脊部分，以及两个以上的侧脊部， 位于中央脊部的两侧的高度比中心脊部的高度大，并且包括第二导电型包覆层。 具有比第二导电型包覆层低的折射率的绝缘膜分别形成在从第二导电型包覆层的侧表面在中心脊部的两个侧表面上的区域中分别设置的一对条带 外。 绝缘膜不形成在中心脊部上。

公开(公告)号：US20060176921A1

公开(公告)日：2006-08-10

申请号：US11335828

申请日：2006-01-20

申请人： Tetsuo Ueda ,  Masahiro Kume ,  Toshiya Kawata ,  Isao Kidoguchi

发明人： Tetsuo Ueda ,  Masahiro Kume ,  Toshiya Kawata ,  Isao Kidoguchi

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/162 ,  H01S5/168 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/32341 ,  H01S5/34326 ,  H01S5/3436 ,  H01S5/4031 ,  H01S5/4087 ,  H01S2301/185

摘要： To provide a semiconductor laser device for which a horizontal divergence angle of a laser beam can be improved independently of optimization of other properties such as a cladding layer thickness and a current injected region size. A current blocking layer covers a larger area of a p-type second cladding layer and p-type cap layer extending in a resonator length direction, on a light emitting end face side than on an opposite end face side. Thus, current uninjected regions are formed in an optical waveguide. The current blocking layer (current uninjected region) on the light emitting end face side is set long enough to prevent carriers, which flow in from a current injected region, from reaching alight emitting end face. In this way, a light intensity distribution of a near-field pattern on the light emitting end face is concentrated, thereby increasing a horizontal divergence angle of a laser beam.

摘要翻译： 提供一种半导体激光器件，其可以独立于诸如包层厚度和电流注入区域尺寸等其他性能的优化而提高激光束的水平发散角。 电流阻挡层覆盖在发光端面侧上比在相对端面侧上在谐振器长度方向上延伸的p型第二覆层和p型覆盖层的较大面积。 因此，在光波导中形成电流未被注入的区域。 发光端面侧的电流阻挡层（电流未注入区）被设定得足够长以防止从电流注入区流入的载流子到达发光端面。 以这种方式，发光端面上的近场图案的光强度分布集中，从而增加激光束的水平发散角。

公开(公告)号：US07197055B2

公开(公告)日：2007-03-27

申请号：US11070267

申请日：2005-03-03

申请人： Tetsuo Ueda ,  Masahiro Kume ,  Toshiya Kawata ,  Isao Kidoguchi

发明人： Tetsuo Ueda ,  Masahiro Kume ,  Toshiya Kawata ,  Isao Kidoguchi

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/1039 ,  H01S5/162 ,  H01S5/168 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/34333 ,  H01S5/4031 ,  H01S5/4087 ,  H01S2301/18

摘要： In a semiconductor laser 1, a current blocking layer 19 covers a p-type 2nd cladding layer 17 and a p-type cap layer 18 that extend in a lengthwise direction of an optical resonator, at both a light-emission end and an end opposite the light-emission end, to thus form non-current injection regions in an optical waveguide. By making current blocking layer 19 at the light-emission end large enough that carriers flowing from a current injection region do not reach the light-emission end surface, the light intensity distribution in the near field at the light-emission end surface is strongly concentrated, allowing the horizontal divergence angle of an emerging laser beam to be enlarged. This structure makes it possible to enlarge the horizontal divergence angle independently after having optimized the thickness of cladding layers and the size of the current injection region.

摘要翻译： 在半导体激光器1中，电流阻挡层19覆盖在光谐振器的长度方向上延伸的p型2层包层17和p型覆盖层18， 发光端和与发光端相对的端部，从而在光波导中形成非电流注入区域。 通过使发光端处的电流阻挡层19足够大，使得从电流注入区域流动的载流子未到达发光端面，发光端面处的近场中的光强度分布被强烈集中 允许出现的激光束的水平发散角被扩大。 这种结构使得可以在优化包覆层的厚度和电流注入区域的尺寸之后独立地扩大水平发散角。

公开(公告)号：US20050141579A1

公开(公告)日：2005-06-30

申请号：US10980651

申请日：2004-11-04

申请人： Keiji Yamane ,  Masahiro Kume ,  Toshiya Kawata ,  Isao Kidoguchi

发明人： Keiji Yamane ,  Masahiro Kume ,  Toshiya Kawata ,  Isao Kidoguchi

IPC分类号： H01L21/50 ,  H01S5/00 ,  H01S5/02 ,  H01S5/022 ,  H01S5/042 ,  H01S5/223

CPC分类号： H01S5/0425 ,  H01S5/0021 ,  H01S5/02272 ,  H01S5/2231 ,  H01S2301/14

摘要： A semiconductor laser includes an n-type semiconductor substrate, an n-type clad layer, an active layer, a p-type first clad layer, a current blocking layer, a p-type second clad layer and a p-type contact layer stacked in this order form the bottom. A p-side ohmic electrode is formed on the p-type contact layer and an n-side ohmic electrode is formed on a back surface of the n-type semiconductor substrate. A stripe is formed in the current blocking layer so as to extend in the optical oscillator direction. In a center portion of the p-type contact layer, a slit is formed so as to extend in the optical oscillator direction and intersect with the stripe with right angles.

摘要翻译： 半导体激光器包括n型半导体衬底，n型覆盖层，有源层，p型第一覆盖层，电流阻挡层，p型第二覆盖层和p型接触层堆叠 以此顺序形成底部。 在p型接触层上形成p侧欧姆电极，在n型半导体衬底的背面上形成n侧欧姆电极。 在电流阻挡层中形成条带，以沿光学振荡器方向延伸。 在p型接触层的中心部分，形成狭缝，以便在光学振荡器方向上延伸并且与条纹成直角相交。

公开(公告)号：US07442628B2

公开(公告)日：2008-10-28

申请号：US11706343

申请日：2007-02-15

申请人： Keiji Yamane ,  Tetsuo Ueda ,  Isao Kidoguchi ,  Toshiya Kawata

发明人： Keiji Yamane ,  Tetsuo Ueda ,  Isao Kidoguchi ,  Toshiya Kawata

IPC分类号： H01L21/00

CPC分类号： B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/168 ,  H01S5/2206 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/34333

摘要： A method for manufacturing a semiconductor laser. As a preparative step for coating an end face of a resonator with a dielectric film, a cleavage plane of a semiconductor laminated structure that is to be the end face is subjected to a plasma cleaning to prevent a conductive film, which absorbs laser light, from attaching to the cleavage plane. During the plasma cleaning, a first process gas containing argon gas and nitrogen gas is introduced into a vacuumed ECR sputtering apparatus. After the cleavage plane is exposed to the first process gas in the plasma state for a certain time period without application of a voltage, a second process gas containing argon gas and oxygen gas is introduced, and the cleavage plane is exposed to the second process gas in the plasma state while a voltage is applied to the silicon target.

摘要翻译： 一种半导体激光器的制造方法。 作为用电介质膜涂覆谐振器的端面的制备步骤，将作为端面的半导体层叠结构的解理面进行等离子体清洗，以防止吸收激光的导电膜 附着于解理面。 在等离子体清洗期间，将含有氩气和氮气的第一工艺气体引入真空的ECR溅射装置中。 在不施加电压的情况下，在等离子体状态下将解理面暴露于等离子体状态的第一工艺气体一定时间后，引入含有氩气和氧气的第二工艺气体，并将解理面暴露于第二工艺气体 处于等离子体状态，同时向硅靶施加电压。

公开(公告)号：US20070298528A1

公开(公告)日：2007-12-27

申请号：US11706343

申请日：2007-02-15

申请人： Keiji Yamane ,  Tetsuo Ueda ,  Isao Kidoguchi ,  Toshiya Kawata

发明人： Keiji Yamane ,  Tetsuo Ueda ,  Isao Kidoguchi ,  Toshiya Kawata

IPC分类号： H01L21/00

CPC分类号： B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/168 ,  H01S5/2206 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/34333

摘要： A method for manufacturing a semiconductor laser. As a preparative step for coating an end face of a resonator with a dielectric film, a cleavage plane of a semiconductor laminated structure that is to be the end face is subjected to a plasma cleaning to prevent a conductive film, which absorbs laser light, from attaching to the cleavage plane. During the plasma cleaning, a first process gas containing argon gas and nitrogen gas is introduced into a vacuumed ECR sputtering apparatus. After the cleavage plane is exposed to the first process gas in the plasma state for a certain time period without application of a voltage, a second process gas containing argon gas and oxygen gas is introduced, and the cleavage plane is exposed to the second process gas in the plasma state while a voltage is applied to the silicon target.

公开(公告)号：US20050232325A1

公开(公告)日：2005-10-20

申请号：US11070267

申请日：2005-03-03

申请人： Tetsuo Ueda ,  Masahiro Kume ,  Toshiya Kawata ,  Isao Kidoguchi

发明人： Tetsuo Ueda ,  Masahiro Kume ,  Toshiya Kawata ,  Isao Kidoguchi

IPC分类号： H01S5/227 ,  H01S5/00 ,  H01S5/02 ,  H01S5/10 ,  H01S5/16 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/343 ,  H01S5/40

CPC分类号： B82Y20/00 ,  H01S5/1039 ,  H01S5/162 ,  H01S5/168 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/34333 ,  H01S5/4031 ,  H01S5/4087 ,  H01S2301/18

摘要： In a semiconductor laser 1, a current blocking layer 19 covers a p-type 2nd cladding layer 17 and a p-type cap layer 18 that extend in a lengthwise direction of an optical resonator, at both a light-emission end and an end opposite the light-emission end, to thus form non-current injection regions in an optical waveguide. By making current blocking layer 19 at the light-emission end large enough that carriers flowing from a current injection region do not reach the light-emission end surface, the light intensity distribution in the near field at the light-emission end surface is strongly concentrated, allowing the horizontal divergence angle of an emerging laser beam to be enlarged. This structure makes it possible to enlarge the horizontal divergence angle independently after having optimized the thickness of cladding layers and the size of the current injection region.

摘要翻译： 在半导体激光器1中，电流阻挡层19覆盖在光谐振器的长度方向上延伸的p型2层包层17和p型覆盖层18， 发光端和与发光端相对的端部，从而在光波导中形成非电流注入区域。 通过使发光端处的电流阻挡层19足够大，使得从电流注入区域流动的载流子未到达发光端面，发光端面处的近场中的光强度分布被强烈集中 允许出现的激光束的水平发散角被扩大。 这种结构使得可以在优化包覆层的厚度和电流注入区域的尺寸之后独立地扩大水平发散角。

公开(公告)号：US07192851B2

公开(公告)日：2007-03-20

申请号：US10931206

申请日：2004-09-01

申请人： Keiji Yamane ,  Tetsuo Ueda ,  Isao Kidoguchi ,  Toshiya Kawata

发明人： Keiji Yamane ,  Tetsuo Ueda ,  Isao Kidoguchi ,  Toshiya Kawata

IPC分类号： H01L21/00

CPC分类号： B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/168 ,  H01S5/2206 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/34333

摘要： A method for manufacturing a semiconductor laser. As a preparative step for coating an end face of a resonator with a dielectric film, a cleavage plane of a semiconductor laminated structure that is to be the end face is subjected to a plasma cleaning to prevent a conductive film, which absorbs laser light, from attaching to the cleavage plane. During the plasma cleaning, a first process gas containing argon gas and nitrogen gas is introduced into a vacuumed ECR sputtering apparatus. After the cleavage plane is exposed to the first process gas in the plasma state for a certain time period without application of a voltage, a second process gas containing argon gas and oxygen gas is introduced, and the cleavage plane is exposed to the second process gas in the plasma state while a voltage is applied to the silicon target.

摘要翻译： 一种半导体激光器的制造方法。 作为用电介质膜涂覆谐振器的端面的制备步骤，将作为端面的半导体层叠结构的解理面进行等离子体清洗，以防止吸收激光的导电膜 附着于解理面。 在等离子体清洗期间，将含有氩气和氮气的第一工艺气体引入真空的ECR溅射装置中。 在不施加电压的情况下，在等离子体状态下将解理面暴露于等离子体状态的第一工艺气体一定时间后，引入含有氩气和氧气的第二工艺气体，并将解理面暴露于第二工艺气体 处于等离子体状态，同时向硅靶施加电压。

公开(公告)号：US20050059181A1

公开(公告)日：2005-03-17

申请号：US10931206

申请日：2004-09-01

申请人： Keiji Yamane ,  Tetsuo Ueda ,  Isao Kidoguchi ,  Toshiya Kawata

发明人： Keiji Yamane ,  Tetsuo Ueda ,  Isao Kidoguchi ,  Toshiya Kawata

IPC分类号： H01S5/028 ,  H01L21/00 ,  H01L21/26 ,  H01L21/42 ,  H01S5/00 ,  H01S5/02 ,  H01S5/16 ,  H01S5/22 ,  H01S5/223 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/168 ,  H01S5/2206 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/34333

摘要： A method for manufacturing a semiconductor laser. As a preparative step for coating an end face of a resonator with a dielectric film, a cleavage plane of a semiconductor laminated structure that is to be the end face is subjected to a plasma cleaning to prevent a conductive film, which absorbs laser light, from attaching to the cleavage plane. During the plasma cleaning, a first process gas containing argon gas and nitrogen gas is introduced into a vacuumed ECR sputtering apparatus. After the cleavage plane is exposed to the first process gas in the plasma state for a certain time period without application of a voltage, a second process gas containing argon gas and oxygen gas is introduced, and the cleavage plane is exposed to the second process gas in the plasma state while a voltage is applied to the silicon target.

摘要翻译： 一种半导体激光器的制造方法。 作为用电介质膜涂覆谐振器的端面的制备步骤，将作为端面的半导体叠层结构的解理面进行等离子体清洗，以防止吸收激光的导电膜 附着于解理面。 在等离子体清洗期间，将含有氩气和氮气的第一工艺气体引入真空的ECR溅射装置中。 在不施加电压的情况下，在等离子体状态下将解理面暴露于等离子体状态的第一工艺气体一定时间后，引入含有氩气和氧气的第二工艺气体，并将解理面暴露于第二工艺气体 处于等离子体状态，同时向硅靶施加电压。