公开(公告)号：US06861681B2

公开(公告)日：2005-03-01

申请号：US10620510

申请日：2003-07-16

申请人： Koshi Ando ,  Tomoki Abe ,  Takao Nakamura

发明人： Koshi Ando ,  Tomoki Abe ,  Takao Nakamura

IPC分类号： H01L31/10 ,  G01J1/02 ,  H01L21/8238 ,  H01L31/00 ,  H01L31/0248 ,  H01L31/0256 ,  H01L31/0296 ,  H01L31/0328 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/072 ,  H01L31/105 ,  H01L31/107 ,  H01L31/18

CPC分类号： H01L31/0296 ,  B82Y20/00 ,  H01L31/02966 ,  H01L31/0328 ,  H01L31/035236 ,  H01L31/107

摘要： A blue-ultraviolet on-p-GaAs substrate pin Zn1-xMgxSySe1-y photodiode with high quantum efficiency, small dark current, high reliability and a long lifetime. The ZnMgSSe photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, an n-Zn1-xMgxSySe1-y layer, an n-electrode and an optionally provided antireflection film. Incidence light arrives at the i-layer without passing ZnTe layers. Since the incidence light is not absorbed by ZnTe layers, high quantum efficiency and high sensitivity are obtained.

公开(公告)号：US20050121692A1

公开(公告)日：2005-06-09

申请号：US11040751

申请日：2005-01-20

申请人： Koshi Ando ,  Tomoki Abe ,  Takao Nakamura

发明人： Koshi Ando ,  Tomoki Abe ,  Takao Nakamura

IPC分类号： H01L31/10 ,  G01J1/02 ,  H01L21/8238 ,  H01L31/00 ,  H01L31/0248 ,  H01L31/0256 ,  H01L31/0296 ,  H01L31/0328 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/072 ,  H01L31/105 ,  H01L31/107 ,  H01L31/18

CPC分类号： H01L31/0296 ,  B82Y20/00 ,  H01L31/02966 ,  H01L31/0328 ,  H01L31/035236 ,  H01L31/107

摘要： A blue-ultraviolet on-p-GaAs substrate pin Zn1-xMgxSySe1-y photodiode with high quantum efficiency, small dark current, high reliability and a long lifetime. The ZnMgSSe photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, an n-Zn1-xMgxSySe1-y layer, an n-electrode and an optionally provided antireflection film. Incidence light arrives at the i-layer without passing ZnTe layers. Since the incidence light is not absorbed by ZnTe layers, high quantum efficiency and high sensitivity are obtained. A blue-ultraviolet on-p-GaAs substrate avalanche Zn1-xMgxSySe1-y photodiode with high sensitivity, high quantum efficiency, a wide sensitivity range, high reliability and a long lifetime. The ZnMgSSe avalanche photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn1-xMgxSySe1-y layer, a lower doped n−-Zn1-xMgxSySe1-y layer, a higher doped n+-Zn1-xMgxSySe1-y layer, an n-electrode and an optionally provided antireflection film. Since the incidence light is not absorbed by ZnTe layers, a high avalanche gain, high quantum efficiency and high sensitivity are obtained.

公开(公告)号：US06956251B2

公开(公告)日：2005-10-18

申请号：US11040751

申请日：2005-01-20

申请人： Koshi Ando ,  Tomoki Abe ,  Takao Nakamura

发明人： Koshi Ando ,  Tomoki Abe ,  Takao Nakamura

IPC分类号： H01L31/10 ,  G01J1/02 ,  H01L21/8238 ,  H01L31/00 ,  H01L31/0248 ,  H01L31/0256 ,  H01L31/0296 ,  H01L31/0328 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/072 ,  H01L31/105 ,  H01L31/107 ,  H01L31/18

CPC分类号： H01L31/0296 ,  B82Y20/00 ,  H01L31/02966 ,  H01L31/0328 ,  H01L31/035236 ,  H01L31/107

摘要： A blue-ultraviolet on-p-GaAs substrate pin Zn1-xMgxSySe1-y photodiode with high quantum efficiency, small dark current, high reliability and a long lifetime. The ZnMgSSe photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, an n-Zn1-xMgxSySe1-y layer, an n-electrode and an optionally provided antireflection film. Incidence light arrives at the i-layer without passing ZnTe layers. Since the incidence light is not absorbed by ZnTe layers, high quantum efficiency and high sensitivity are obtained.

摘要翻译： 蓝色紫外线p-GaAs衬底引脚Zn1-xMgxSySe1-y光电二极管，量子效率高，暗电流小，可靠性高，使用寿命长。 ZnMgSSe光电二极管具有金属p电极，p-GaAs单晶衬底，p（ZnSe / ZnTe）m超晶格（m：薄膜组的整数），可选地形成的p-ZnSe缓冲层， p-Zn1-xMgxSySe1-y层，i-Zn1-xMgxSySe1-y层，n-Zn1-xMgxSySe1-y层，n电极和任选提供的抗反射膜。 入射光到达i层而不通过ZnTe层。 由于入射光不被ZnTe层吸收，因此获得了高量子效率和高灵敏度。

公开(公告)号：US07960918B2

公开(公告)日：2011-06-14

申请号：US11992592

申请日：2008-02-04

申请人： Masahiro Adachi ,  Yutaka Hashimoto ,  Katsuhisa Kanzaki ,  Tomoki Abe ,  Hirofumi Kasada ,  Koshi Ando

发明人： Masahiro Adachi ,  Yutaka Hashimoto ,  Katsuhisa Kanzaki ,  Tomoki Abe ,  Hirofumi Kasada ,  Koshi Ando

IPC分类号： H05B41/30

CPC分类号： H05B33/0848 ,  H05B33/089

摘要： An electronic device, and a corresponding light emission control method for the electronic device, emit light by utilizing recombination of electrons and holes the device and method input a pulse-shaped driving signal having a duty ratio higher than or equal to 0.7 and lower than 1.0 and thereby causing light to be emitted intermittently. When an electron density is denoted by n, a hole density by p, a thermal velocity of electrons by Vth:n, a thermal velocity of holes by Vth:p, an electron capture cross section of a defect level by σn, a hole capture cross section of a defect level by σp, and a pulse width of the driving signal by W, the input driving signal has a pulse width W that satisfies W

摘要翻译： 电子设备和相应的电子设备的发光控制方法通过利用电子和空穴的复合来发光，该装置和方法输入占空比高于或等于0.7且低于1.0的脉冲驱动信号 从而间歇地发光。 当电子密度由n表示时，空穴密度为p，电子的热速度为Vth：n，空穴的热速度为Vth：p，缺陷水平的电子捕获截面为＆sgr; n，a 缺陷电平的孔捕获截面为＆sgr; p，驱动信号的脉冲宽度为W，输入驱动信号的脉冲宽度W满足W <1 / {n·vth：n·＆sgr; n· p·vth：p·＆sgr; p /（n·vth：n·＆sgr; n + p·vth：p·＆sgr; p）}。

公开(公告)号：US20100156311A1

公开(公告)日：2010-06-24

申请号：US11992592

申请日：2008-02-04

申请人： Masahiro Adachi ,  Yutaka Hashimoto ,  Katsuhisa Kanzaki ,  Tomoki Abe ,  Hirofumi Kasada ,  Koshi Ando

发明人： Masahiro Adachi ,  Yutaka Hashimoto ,  Katsuhisa Kanzaki ,  Tomoki Abe ,  Hirofumi Kasada ,  Koshi Ando

IPC分类号： H05B37/02

CPC分类号： H05B33/0848 ,  H05B33/089

摘要： In an electronic device having a light emitting section that emits light by utilizing recombination of electrons and holes and in a light emission control method for this electronic device, an electronic device and a light emission control method for this electronic device are provided in which lifetime improvement is achieved in the light emitting section.An electronic device and a light emission control method for the electronic device, the electronic device including: a light emitting section that emits light by utilizing recombination of electrons and holes; and a driving section that inputs to the light emitting section a pulse-shaped driving signal having a duty ratio higher than or equal to 0.7 and lower than 1.0 and thereby causes the light emitting section to emit light intermittently, wherein when an electron density is denoted by n, a hole density is denoted by p, a thermal velocity of electrons is denoted by vth:n, a thermal velocity of holes is denoted by vth:p, an electron capture cross section of a defect level present in the light emitting section is denoted by σn, a hole capture cross section of a defect level present in the light emitting section is denoted by σp, and a pulse width of the driving signal is denoted by W, the driving section inputs to the light emitting section the driving signal having a pulse width W that satisfies W

摘要翻译： 在具有通过利用电子和空穴的复合发光的发光部的电子设备中，在该电子设备的发光控制方法中，提供了一种电子设备和该电子设备的发光控制方法，其中寿命改善 在发光部分实现。 一种电子设备的电子设备和发光控制方法，所述电子设备包括：通过利用电子和空穴的复合发光的发光部分; 以及驱动部，其向所述发光部输入占空比高于或等于0.7且低于1.0的脉冲状驱动信号，从而使所述发光部分间歇地发光，其中当表示电子密度时 由n表示孔密度，以v表示电子的热速度，vth：n表示空穴的热速度，vth：p表示存在于发光部中的缺陷水平的电子捕获截面 由＆sgr; n表示，发光部分中存在的缺陷电平的空穴捕获截面由＆sgr; p表示，驱动信号的脉冲宽度由W表示，驱动部分输入到发光部分 将具有满足W <1 / {n·vth：n·＆sgr; n·p·vth：p·＆sgr; p /（n·vth：n·＆sgr; n + p·vth）的脉冲宽度W的驱动信号 ：p·＆sgr; p）}。