公开(公告)号：US07960918B2

公开(公告)日：2011-06-14

申请号：US11992592

申请日：2008-02-04

申请人： Masahiro Adachi ,  Yutaka Hashimoto ,  Katsuhisa Kanzaki ,  Tomoki Abe ,  Hirofumi Kasada ,  Koshi Ando

发明人： Masahiro Adachi ,  Yutaka Hashimoto ,  Katsuhisa Kanzaki ,  Tomoki Abe ,  Hirofumi Kasada ,  Koshi Ando

IPC分类号： H05B41/30

CPC分类号： H05B33/0848 ,  H05B33/089

摘要： An electronic device, and a corresponding light emission control method for the electronic device, emit light by utilizing recombination of electrons and holes the device and method input a pulse-shaped driving signal having a duty ratio higher than or equal to 0.7 and lower than 1.0 and thereby causing light to be emitted intermittently. When an electron density is denoted by n, a hole density by p, a thermal velocity of electrons by Vth:n, a thermal velocity of holes by Vth:p, an electron capture cross section of a defect level by σn, a hole capture cross section of a defect level by σp, and a pulse width of the driving signal by W, the input driving signal has a pulse width W that satisfies W

摘要翻译： 电子设备和相应的电子设备的发光控制方法通过利用电子和空穴的复合来发光，该装置和方法输入占空比高于或等于0.7且低于1.0的脉冲驱动信号 从而间歇地发光。 当电子密度由n表示时，空穴密度为p，电子的热速度为Vth：n，空穴的热速度为Vth：p，缺陷水平的电子捕获截面为＆sgr; n，a 缺陷电平的孔捕获截面为＆sgr; p，驱动信号的脉冲宽度为W，输入驱动信号的脉冲宽度W满足W <1 / {n·vth：n·＆sgr; n· p·vth：p·＆sgr; p /（n·vth：n·＆sgr; n + p·vth：p·＆sgr; p）}。

公开(公告)号：US08042564B2

公开(公告)日：2011-10-25

申请号：US12453747

申请日：2009-05-21

申请人： Koshi Ando ,  Miho Sato

发明人： Koshi Ando ,  Miho Sato

IPC分类号： F16K24/04

CPC分类号： F16K24/044 ,  B60K15/03504 ,  Y10T137/0874 ,  Y10T137/3099 ,  Y10T137/7358

摘要： A fuel cutoff valve is furnished with a casing defining a valve chamber, and a float mechanism housed to be able to rise and fall in the valve chamber. The casing is furnished with a closure plate situated in the space above the valve chamber and in a facing arrangement with a connecting passage. The closure plate is furnished with a vent hole that has been formed so as to divert the passage from the connecting passage to a second pipe line, and with a barrier wall that is situated in opposition to a first pipe line and that has been formed so as to divert the passage from the first pipe line to the second pipe line.

摘要翻译： 燃料切断阀配备有限定阀室的壳体和容纳成能够在阀室中上升和下降的浮子机构。 壳体配备有位于阀室上方的空间中的封闭板，并且具有连接通道的面对设置。 封闭板配备有通气孔，该通气孔已经形成为将通道从连接通道转移到第二管线，并且具有与第一管线相对置并且已形成的阻挡壁 以将通道从第一管线转向第二管线。

公开(公告)号：US20090320956A1

公开(公告)日：2009-12-31

申请号：US12457949

申请日：2009-06-25

申请人： Koshi Ando ,  Koji Sugiura

发明人： Koshi Ando ,  Koji Sugiura

IPC分类号： B65B31/00

CPC分类号： B60K15/04 ,  B60K15/0403

摘要： The fueling device has a fueling pipe adapted to supply fuel pumped from the inlet opening the fuel tank. A grating member is situated inside the fueling pipe. The grating member includes an annular body positioned substantially concentrically with the fuel passage; and a support body adapted to support the annular body on the inside wall of the flow passage. Gaps present between the inside wall of the passage-defining member and the annular body and the support body constitute part of the fuel passage.

摘要翻译： 加油装置具有供给燃料管，其适用于从燃料箱的入口开口供给燃料。 加料管内部设有格栅构件。 光栅构件包括与燃料通道基本同心地设置的环形体; 以及适于将所述环状体支撑在所述流路的内壁上的支撑体。 存在于通道限定构件的内壁和环形体与支撑体之间的间隙构成燃料通道的一部分。

公开(公告)号：US06861681B2

公开(公告)日：2005-03-01

申请号：US10620510

申请日：2003-07-16

申请人： Koshi Ando ,  Tomoki Abe ,  Takao Nakamura

发明人： Koshi Ando ,  Tomoki Abe ,  Takao Nakamura

IPC分类号： H01L31/10 ,  G01J1/02 ,  H01L21/8238 ,  H01L31/00 ,  H01L31/0248 ,  H01L31/0256 ,  H01L31/0296 ,  H01L31/0328 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/072 ,  H01L31/105 ,  H01L31/107 ,  H01L31/18

CPC分类号： H01L31/0296 ,  B82Y20/00 ,  H01L31/02966 ,  H01L31/0328 ,  H01L31/035236 ,  H01L31/107

摘要： A blue-ultraviolet on-p-GaAs substrate pin Zn1-xMgxSySe1-y photodiode with high quantum efficiency, small dark current, high reliability and a long lifetime. The ZnMgSSe photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, an n-Zn1-xMgxSySe1-y layer, an n-electrode and an optionally provided antireflection film. Incidence light arrives at the i-layer without passing ZnTe layers. Since the incidence light is not absorbed by ZnTe layers, high quantum efficiency and high sensitivity are obtained.

公开(公告)号：US20050121692A1

公开(公告)日：2005-06-09

申请号：US11040751

申请日：2005-01-20

申请人： Koshi Ando ,  Tomoki Abe ,  Takao Nakamura

发明人： Koshi Ando ,  Tomoki Abe ,  Takao Nakamura

IPC分类号： H01L31/10 ,  G01J1/02 ,  H01L21/8238 ,  H01L31/00 ,  H01L31/0248 ,  H01L31/0256 ,  H01L31/0296 ,  H01L31/0328 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/072 ,  H01L31/105 ,  H01L31/107 ,  H01L31/18

CPC分类号： H01L31/0296 ,  B82Y20/00 ,  H01L31/02966 ,  H01L31/0328 ,  H01L31/035236 ,  H01L31/107

摘要： A blue-ultraviolet on-p-GaAs substrate pin Zn1-xMgxSySe1-y photodiode with high quantum efficiency, small dark current, high reliability and a long lifetime. The ZnMgSSe photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, an n-Zn1-xMgxSySe1-y layer, an n-electrode and an optionally provided antireflection film. Incidence light arrives at the i-layer without passing ZnTe layers. Since the incidence light is not absorbed by ZnTe layers, high quantum efficiency and high sensitivity are obtained. A blue-ultraviolet on-p-GaAs substrate avalanche Zn1-xMgxSySe1-y photodiode with high sensitivity, high quantum efficiency, a wide sensitivity range, high reliability and a long lifetime. The ZnMgSSe avalanche photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn1-xMgxSySe1-y layer, a lower doped n−-Zn1-xMgxSySe1-y layer, a higher doped n+-Zn1-xMgxSySe1-y layer, an n-electrode and an optionally provided antireflection film. Since the incidence light is not absorbed by ZnTe layers, a high avalanche gain, high quantum efficiency and high sensitivity are obtained.

公开(公告)号：US06724018B2

公开(公告)日：2004-04-20

申请号：US10228289

申请日：2002-08-27

申请人： Koshi Ando ,  Takao Nakamura

发明人： Koshi Ando ,  Takao Nakamura

IPC分类号： H01L310328

CPC分类号： B82Y20/00 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/035236 ,  H01L31/105 ,  H01L31/107 ,  H01L31/1832

摘要： A blue-violet-near-ultraviolet pin-photodiode with small dark current, high reliability and long lifetime. The pin-photodiode has a metallic n-electrode, a n-ZnSe single crystal substrate, an optionally added n-ZnSe buffer layer, an n-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, a p-Zn1-xMgxSySe1-y layer, a p-(ZnTe/ZnSe)m SLE, a p-ZnTe contact layer, an optionally provided antireflection film and a metallic p-electrode. A blue-violet-near-ultraviolet avalanche photodiode with small dark current, high reliability and long lifetime. The avalanche photodiode has a metallic n-electrode, a n-ZnSe single crystal substrate, an optionally added n-ZnSe buffer layer, an n-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, a p-Zn1-xMgxSySe1-y layer, a p-(ZnTe/ZnSe)m SLE, a p-ZnTe contact layer, an optionally provided antireflection film and a metallic p-electrode. Upper sides of the layered structure are etched into a mesa-shape and coated with insulating films.

摘要翻译： 蓝紫色近紫外灯管光电二极管，暗电流小，可靠性高，使用寿命长。 针式光电二极管具有金属n电极，n-ZnSe单晶衬底，任选添加的n-ZnSe缓冲层，n-Zn1-xMgxSySe1-y层，i-Zn1-xMgxSySe1-y层，p -Zn1-xMgxSySe1-y层，p-（ZnTe / ZnSe）SLE，p-ZnTe接触层，任选提供的抗反射膜和金属p电极。蓝紫色近紫外线雪崩光电二极管 具有小暗电流，高可靠性和长寿命。 雪崩光电二极管具有金属n电极，n-ZnSe单晶衬底，任选添加的n-ZnSe缓冲层，n-Zn1-xMgxSySe1-y层，i-Zn1-xMgxSySe1-y层， Zn1-xMgxSySe1-y层，p-（ZnTe / ZnSe）SLE，p-ZnTe接触层，任选提供的抗反射膜和金属p电极。 层状结构的上侧被蚀刻成台面形状并涂覆有绝缘膜。

公开(公告)号：US08181678B2

公开(公告)日：2012-05-22

申请号：US12457949

申请日：2009-06-25

申请人： Koshi Ando ,  Koji Sugiura

发明人： Koshi Ando ,  Koji Sugiura

IPC分类号： B65B1/04

CPC分类号： B60K15/04 ,  B60K15/0403

摘要： The fueling device has a fueling pipe adapted to supply fuel pumped from the inlet opening the fuel tank. A grating member is situated inside the fueling pipe. The grating member includes an annular body positioned substantially concentrically with the fuel passage; and a support body adapted to support the annular body on the inside wall of the flow passage. Gaps present between the inside wall of the passage-defining member and the annular body and the support body constitute part of the fuel passage.

摘要翻译： 加油装置具有供给燃料管，其适用于从燃料箱的入口开口供给燃料。 加料管内部设有格栅构件。 光栅构件包括与燃料通道基本同心地设置的环形体; 以及适于将所述环状体支撑在所述流路的内壁上的支撑体。 存在于通道限定构件的内壁和环形体与支撑体之间的间隙构成燃料通道的一部分。

公开(公告)号：US20100156311A1

公开(公告)日：2010-06-24

申请号：US11992592

申请日：2008-02-04

申请人： Masahiro Adachi ,  Yutaka Hashimoto ,  Katsuhisa Kanzaki ,  Tomoki Abe ,  Hirofumi Kasada ,  Koshi Ando

发明人： Masahiro Adachi ,  Yutaka Hashimoto ,  Katsuhisa Kanzaki ,  Tomoki Abe ,  Hirofumi Kasada ,  Koshi Ando

IPC分类号： H05B37/02

CPC分类号： H05B33/0848 ,  H05B33/089

摘要： In an electronic device having a light emitting section that emits light by utilizing recombination of electrons and holes and in a light emission control method for this electronic device, an electronic device and a light emission control method for this electronic device are provided in which lifetime improvement is achieved in the light emitting section.An electronic device and a light emission control method for the electronic device, the electronic device including: a light emitting section that emits light by utilizing recombination of electrons and holes; and a driving section that inputs to the light emitting section a pulse-shaped driving signal having a duty ratio higher than or equal to 0.7 and lower than 1.0 and thereby causes the light emitting section to emit light intermittently, wherein when an electron density is denoted by n, a hole density is denoted by p, a thermal velocity of electrons is denoted by vth:n, a thermal velocity of holes is denoted by vth:p, an electron capture cross section of a defect level present in the light emitting section is denoted by σn, a hole capture cross section of a defect level present in the light emitting section is denoted by σp, and a pulse width of the driving signal is denoted by W, the driving section inputs to the light emitting section the driving signal having a pulse width W that satisfies W

摘要翻译： 在具有通过利用电子和空穴的复合发光的发光部的电子设备中，在该电子设备的发光控制方法中，提供了一种电子设备和该电子设备的发光控制方法，其中寿命改善 在发光部分实现。 一种电子设备的电子设备和发光控制方法，所述电子设备包括：通过利用电子和空穴的复合发光的发光部分; 以及驱动部，其向所述发光部输入占空比高于或等于0.7且低于1.0的脉冲状驱动信号，从而使所述发光部分间歇地发光，其中当表示电子密度时 由n表示孔密度，以v表示电子的热速度，vth：n表示空穴的热速度，vth：p表示存在于发光部中的缺陷水平的电子捕获截面 由＆sgr; n表示，发光部分中存在的缺陷电平的空穴捕获截面由＆sgr; p表示，驱动信号的脉冲宽度由W表示，驱动部分输入到发光部分 将具有满足W <1 / {n·vth：n·＆sgr; n·p·vth：p·＆sgr; p /（n·vth：n·＆sgr; n + p·vth）的脉冲宽度W的驱动信号 ：p·＆sgr; p）}。

公开(公告)号：US06956251B2

公开(公告)日：2005-10-18

申请号：US11040751

申请日：2005-01-20

申请人： Koshi Ando ,  Tomoki Abe ,  Takao Nakamura

发明人： Koshi Ando ,  Tomoki Abe ,  Takao Nakamura

IPC分类号： H01L31/10 ,  G01J1/02 ,  H01L21/8238 ,  H01L31/00 ,  H01L31/0248 ,  H01L31/0256 ,  H01L31/0296 ,  H01L31/0328 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/072 ,  H01L31/105 ,  H01L31/107 ,  H01L31/18

CPC分类号： H01L31/0296 ,  B82Y20/00 ,  H01L31/02966 ,  H01L31/0328 ,  H01L31/035236 ,  H01L31/107

摘要： A blue-ultraviolet on-p-GaAs substrate pin Zn1-xMgxSySe1-y photodiode with high quantum efficiency, small dark current, high reliability and a long lifetime. The ZnMgSSe photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, an n-Zn1-xMgxSySe1-y layer, an n-electrode and an optionally provided antireflection film. Incidence light arrives at the i-layer without passing ZnTe layers. Since the incidence light is not absorbed by ZnTe layers, high quantum efficiency and high sensitivity are obtained.

摘要翻译： 蓝色紫外线p-GaAs衬底引脚Zn1-xMgxSySe1-y光电二极管，量子效率高，暗电流小，可靠性高，使用寿命长。 ZnMgSSe光电二极管具有金属p电极，p-GaAs单晶衬底，p（ZnSe / ZnTe）m超晶格（m：薄膜组的整数），可选地形成的p-ZnSe缓冲层， p-Zn1-xMgxSySe1-y层，i-Zn1-xMgxSySe1-y层，n-Zn1-xMgxSySe1-y层，n电极和任选提供的抗反射膜。 入射光到达i层而不通过ZnTe层。 由于入射光不被ZnTe层吸收，因此获得了高量子效率和高灵敏度。

公开(公告)号：US20090293962A1

公开(公告)日：2009-12-03

申请号：US12453747

申请日：2009-05-21

申请人： Koshi Ando ,  Miho Sato

发明人： Koshi Ando ,  Miho Sato

IPC分类号： F16K31/18

CPC分类号： F16K24/044 ,  B60K15/03504 ,  Y10T137/0874 ,  Y10T137/3099 ,  Y10T137/7358

摘要： A fuel cutoff valve is furnished with a casing defining a valve chamber, and a float mechanism housed to be able to rise and fall in the valve chamber. The casing is furnished with a closure plate situated in the space above the valve chamber and in a facing arrangement with a connecting passage. The closure plate is furnished with a vent hole that has been formed so as to divert the passage from the connecting passage to a second pipe line, and with a barrier wall that is situated in opposition to a first pipe line and that has been formed so as to divert the passage from the first pipe line to the second pipe line.

摘要翻译： 燃料切断阀配备有限定阀室的壳体和容纳成能够在阀室中上升和下降的浮子机构。 壳体配备有位于阀室上方的空间中的封闭板，并且具有连接通道的面对设置。 封闭板配备有通气孔，该通气孔已经形成为将通道从连接通道转移到第二管线，并且具有与第一管线相对置并且已形成的阻挡壁 以将通道从第一管线转向第二管线。