公开(公告)号：US20070232067A1

公开(公告)日：2007-10-04

申请号：US11692241

申请日：2007-03-28

申请人： Kousa Hirota ,  Masahito Mori ,  Naoyuki Kofuji ,  Naoshi Itabashi ,  Toshio Masuda

发明人： Kousa Hirota ,  Masahito Mori ,  Naoyuki Kofuji ,  Naoshi Itabashi ,  Toshio Masuda

IPC分类号： H01L21/302

CPC分类号： H01L21/32139 ,  H01L21/28123

摘要： The invention provides a semiconductor fabrication method comprising a deposition step for depositing a laminated film on a semiconductor substrate having a region in which a mask pattern is formed sparsely and a region in which the mask pattern is formed densely, a lithography step s1 for forming a mask pattern, a cleaning step S11C for removing deposits in the apparatus, a trimming step S3 for trimming the mask pattern, and dry etching steps S4 and S5 for transferring the mask pattern on the laminated film, wherein a seasoning step S11S followed by a deposition step S2 is introduced either before or after the trimming step S3.

摘要翻译： 本发明提供了一种半导体制造方法，包括：沉积步骤，用于在具有稀疏形成掩模图案的区域的半导体衬底上沉积层压膜，以及密集形成掩模图案的区域;用于形成的光刻步骤s1 掩模图案，用于去除设备中的沉积物的清洁步骤S111，用于修整掩模图案的修整步骤S3以及用于将掩模图案转印到层压膜上的干蚀刻步骤S 4和S 5，其中调味 在修整步骤S 3之前或之后引入步骤S11A，然后进行沉积步骤S2。

公开(公告)号：US20070044716A1

公开(公告)日：2007-03-01

申请号：US11508187

申请日：2006-08-23

申请人： Tsutomu Tetsuka ,  Toshio Masuda ,  Naoshi Itabashi ,  Masanori Kadotani ,  Takashi Fujii

发明人： Tsutomu Tetsuka ,  Toshio Masuda ,  Naoshi Itabashi ,  Masanori Kadotani ,  Takashi Fujii

IPC分类号： C23C16/00

CPC分类号： H01J37/32082 ,  C23C16/4401 ,  C23C16/45565 ,  C23C16/505 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32504 ,  H01J37/32559

摘要： The invention provides a plasma processing apparatus aimed at suppressing the corrosion caused by reactive gas and heavy-metal contamination caused by plasma damage of components constituting the high-frequency electrode and gas supply unit. The plasma processing apparatus comprises a processing chamber 1 for subjecting a processing substrate 4 to plasma processing, gas supply means 17, 16 and 11 for feeding gas to the processing chamber 1, and an antenna electrode 10 for supplying high-frequency radiation for discharging the gas to generate plasma, wherein the gas supply means includes a gas shower plate 11 having gas discharge holes on the surface exposed to plasma, and a portion of or a whole surface of the conductor 10 exposed to gas constituting the antenna-electrode side of the gas supply means is subjected to ceramic spraying containing no heavy metal to form a protecting film 12.

摘要翻译： 本发明提供一种等离子体处理装置，旨在抑制由构成高频电极和气体供应单元的部件的等离子体损伤引起的反应性气体和重金属污染引起的腐蚀。 等离子体处理装置包括用于对处理基板4进行等离子体处理的处理室1，用于将气体供给到处理室1的气体供给装置17,16和11以及用于提供高频辐射的天线电极10 气体产生等离子体，其中气体供给装置包括在暴露于等离子体的表面上具有气体排放孔的气体喷淋板11和暴露于构成天线电极侧的气体的导体10的一部分或整个表面 气体供给装置经受不含重金属的陶瓷喷涂以形成保护膜12。

公开(公告)号：US08926790B2

公开(公告)日：2015-01-06

申请号：US11508187

申请日：2006-08-23

申请人： Tsutomu Tetsuka ,  Toshio Masuda ,  Naoshi Itabashi ,  Masanori Kadotani ,  Takashi Fujii

发明人： Tsutomu Tetsuka ,  Toshio Masuda ,  Naoshi Itabashi ,  Masanori Kadotani ,  Takashi Fujii

IPC分类号： H01J37/32 ,  C23C16/455 ,  C23C16/44 ,  C23C16/505

CPC分类号： H01J37/32082 ,  C23C16/4401 ,  C23C16/45565 ,  C23C16/505 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32504 ,  H01J37/32559

摘要： The invention provides a plasma processing apparatus aimed at suppressing the corrosion caused by reactive gas and heavy-metal contamination caused by plasma damage of components constituting the high-frequency electrode and gas supply unit. The plasma processing apparatus comprises a processing chamber 1 for subjecting a processing substrate 4 to plasma processing, gas supply means 17, 16 and 11 for feeding gas to the processing chamber 1, and an antenna electrode 10 for supplying high-frequency radiation for discharging the gas to generate plasma, wherein the gas supply means includes a gas shower plate 11 having gas discharge holes on the surface exposed to plasma, and a portion of or a whole surface of the conductor 10 exposed to gas constituting the antenna-electrode side of the gas supply means is subjected to ceramic spraying containing no heavy metal to form a protecting film 12.

摘要翻译： 本发明提供一种等离子体处理装置，旨在抑制由构成高频电极和气体供应单元的部件的等离子体损伤引起的反应性气体和重金属污染引起的腐蚀。 等离子体处理装置包括用于对处理基板4进行等离子体处理的处理室1，用于将气体供给到处理室1的气体供给装置17,16和11以及用于提供高频辐射的天线电极10 气体产生等离子体，其中气体供给装置包括在暴露于等离子体的表面上具有气体排放孔的气体喷淋板11和暴露于构成天线电极侧的气体的导体10的一部分或整个表面 气体供给装置经受不含重金属的陶瓷喷涂以形成保护膜12。

公开(公告)号：US07772970B2

公开(公告)日：2010-08-10

申请号：US11783111

申请日：2007-04-05

申请人： Toshio Masuda ,  Kenichi Yamamoto ,  Kenji Hijikata ,  Satoshi Satomura ,  Hiroshi Oishi ,  Toyohide Sunaguchi ,  Yoshio Iwakami ,  Munenori Homma ,  Kouji Kaneda ,  Atsushi Atake ,  Tatsuru Fukuda ,  Masayuki Ushiki ,  Minoru Yuki ,  Tsuyoshi Kobayashi ,  Masahito Motoi ,  Naoki Shibata ,  Hiroshi Ogiwara ,  Katsumasa Igarashi ,  Junzo Shinozuka ,  Akihisa Nakamura

发明人： Toshio Masuda ,  Kenichi Yamamoto ,  Kenji Hijikata ,  Satoshi Satomura ,  Hiroshi Oishi ,  Toyohide Sunaguchi ,  Yoshio Iwakami ,  Munenori Homma ,  Kouji Kaneda ,  Atsushi Atake ,  Tatsuru Fukuda ,  Masayuki Ushiki ,  Minoru Yuki ,  Tsuyoshi Kobayashi ,  Masahito Motoi ,  Naoki Shibata ,  Hiroshi Ogiwara ,  Katsumasa Igarashi ,  Junzo Shinozuka ,  Akihisa Nakamura

IPC分类号： B60Q1/00

CPC分类号： F02D11/105 ,  B60K2350/1092 ,  F02D2200/604 ,  Y02T10/84

摘要： The present invention provides a vehicle display device which can display fuel consumption information of a vehicle in a useful and optimum mode for a driver. A meter_EUC calculates an instantaneous fuel consumption of a vehicle based on a mileage and a fuel injection quantity within a set time, calculates an average fuel consumption of the vehicle based on respective cumulative values of the mileage and the fuel injection quantity repeatedly calculated for every set time, and displays the deviation of the instantaneous fuel consumption with respect to the average fuel consumption as fuel consumption information on a fuel consumption meter. The display on the fuel consumption meter is performed by swinging a pointer with respect to a neutral position. When the deviation takes a positive value, the pointer is swung in the pulse direction with a swinging width corresponding to the deviation quantity, while when the deviation takes a negative value, the pointer is swung in the minus direction with a swinging width corresponding to the deviation quantity.

摘要翻译： 本发明提供一种能够以驾驶员的有用且最佳模式显示车辆的燃料消耗信息的车辆显示装置。 根据在设定时间内的里程和燃料喷射量计算车辆的瞬时燃料消耗量，根据对于每个集合重复计算的里程和燃料喷射量的累计值，计算出车辆的平均燃料消耗量 时间，并且将相对于平均燃料消耗的瞬时燃料消耗的偏差显示为燃料消耗计量器上的燃料消耗信息。 通过相对于中立位置摆动指针来执行燃料消耗计的显示。 当偏差为正值时，指针以对应于偏差量的摆动宽度在脉冲方向上摆动，而当偏差为负值时，指针以负方向摆动，摆动宽度对应于 偏差量。

公开(公告)号：US07546197B2

公开(公告)日：2009-06-09

申请号：US11783266

申请日：2007-04-06

申请人： Toshio Masuda ,  Kenichi Yamamoto ,  Kenji Hijikata ,  Satoshi Satomura ,  Atsushi Atake ,  Kouji Kaneda ,  Tatsuru Fukuda ,  Minoru Yuki ,  Masayuki Ushiki ,  Tsuyoshi Kobayashi ,  Masahito Motoi ,  Naoki Shibata ,  Hiroshi Ogiwara ,  Katsumasa Igarashi ,  Junzo Shinozuka ,  Akihisa Nakamura

发明人： Toshio Masuda ,  Kenichi Yamamoto ,  Kenji Hijikata ,  Satoshi Satomura ,  Atsushi Atake ,  Kouji Kaneda ,  Tatsuru Fukuda ,  Minoru Yuki ,  Masayuki Ushiki ,  Tsuyoshi Kobayashi ,  Masahito Motoi ,  Naoki Shibata ,  Hiroshi Ogiwara ,  Katsumasa Igarashi ,  Junzo Shinozuka ,  Akihisa Nakamura

IPC分类号： G06F19/00

CPC分类号： F02D11/105 ,  F02D41/2422 ,  F02D2200/604

摘要： A driving force control device can set driving force characteristics which conform to tastes of drivers using one vehicle thus giving the easy-to-drive feeling to the drivers. An E/G13ECU possesses three modes 1 to 3 as control modes and selects one mode from these modes based on a manipulation input using a mode selection switch. Further, any one of the mode out of these modes 1 to 3 is preset in the E/G13ECU as a temporary changeover mode, and the E/G13ECU changes over a mode selected by the mode selection switch and the preset temporary changeover mode alternatively by the temporary changeover switch.

摘要翻译： 驱动力控制装置可以设置符合使用一个车辆的驾驶员的口味的驱动力特性，从而给驾驶员提供易于驾驶的感觉。 E / G13ECU具有三种模式1至3作为控制模式，并且基于使用模式选择开关的操纵输入从这些模式中选择一种模式。 此外，这些模式1至3中的模式中的任何一种在E / G13ECU中被预设为临时切换模式，并且E / G13ECU通过模式选择开关选择的模式和预设的临时切换模式交替地改变 临时切换开关。

公开(公告)号：US20070247975A1

公开(公告)日：2007-10-25

申请号：US11783275

申请日：2007-04-06

申请人： Toshio Masuda ,  Kenichi Yamamoto ,  Kenji Hijikata ,  Satoshi Satomura ,  Hiroshi Oishi ,  Toyohide Sunaguchi ,  Yoshio Iwakami ,  Munenori Homma ,  Atsushi Atake ,  Kouji Kaneda ,  Tatsuru Fukuda ,  Minoru Yuki ,  Masayuki Ushiki ,  Tsuyoshi Kobayashi ,  Masahito Motoi ,  Naoki Shibata ,  Hiroshi Ogiwara ,  Katsumasa Igarashi ,  Junzo Shinozuka ,  Akihisa Nakamura

发明人： Toshio Masuda ,  Kenichi Yamamoto ,  Kenji Hijikata ,  Satoshi Satomura ,  Hiroshi Oishi ,  Toyohide Sunaguchi ,  Yoshio Iwakami ,  Munenori Homma ,  Atsushi Atake ,  Kouji Kaneda ,  Tatsuru Fukuda ,  Minoru Yuki ,  Masayuki Ushiki ,  Tsuyoshi Kobayashi ,  Masahito Motoi ,  Naoki Shibata ,  Hiroshi Ogiwara ,  Katsumasa Igarashi ,  Junzo Shinozuka ,  Akihisa Nakamura

IPC分类号： G04B19/22

CPC分类号： G01D7/08 ,  G01D1/18 ,  G01D7/12 ,  G07C5/0825 ,  G07C5/0841

摘要： The present invention provides a vehicle display device which allows a driver to instantaneously grasp driving force information. A meter_ECU displays a driving force display image which displays driving force information of a vehicle on an MID, displays an acceleration-torque line (driving force characteristic line) L corresponding to the currently selected mode M and, at the same time, changes a power level which is indicated in a power display region P set within the acceleration-torque line L interlockingly with an accelerator operation of a driver. Due to such a constitution, the vehicle display device allows the driver to instantaneously grasp the driving force information.

摘要翻译： 本发明提供一种车辆显示装置，其允许驾驶员即时掌握驱动力信息。 米_ECU显示在MID上显示车辆的驱动力信息的驱动力显示图像，显示与当前选择的模式M对应的加速度 - 转矩线（驱动力特性线）L，并且同时改变功率 在加速扭矩线L内设置的功率显示区域P中指示的电平与驾驶员的加速器操作互锁。 由于这样的构成，车辆用显示装置能够使驾驶员立即掌握驱动力信息。

公开(公告)号：US07058470B2

公开(公告)日：2006-06-06

申请号：US10999006

申请日：2004-11-30

申请人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Akira Kagoshima ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda

发明人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Akira Kagoshima ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda

IPC分类号： G06F19/00

CPC分类号： H01L22/20 ,  G05B13/048 ,  G05B19/41865 ,  G05B23/024 ,  G05B2219/31357 ,  G05B2219/32058 ,  H01L21/67276 ,  H01L2924/0002 ,  Y02P90/12 ,  Y02P90/14 ,  Y02P90/18 ,  Y02P90/20 ,  H01L2924/00

摘要： A semiconductor processing apparatus for processing a semiconductor wafer includes a sensor for monitoring a processing state of the semiconductor processing apparatus, a processing result input unit which inputs measured values for processing results of a semiconductor wafer processed by the semiconductor processing apparatus, and a model equation generation unit relying on sensed data acquired by the sensor and the measured values to generate a model equation for predicting a processing result using the sensed data as an explanatory variable. The apparatus includes a processing result prediction unit which predicts a processing result based on the model equation and the sensed data, and a process recipe control unit which compares the predicted processing result with a previously set value to control a processing condition or input parameter. The process recipe control unit includes a controller which controls at least one of a plurality of different processing performances for processing of the semiconductor wafer.

摘要翻译： 用于处理半导体晶片的半导体处理装置包括：用于监视半导体处理装置的处理状态的传感器;输入由半导体处理装置处理的半导体晶片的处理结果的测量值的处理结果输入单元;以及模型方程 依赖于由传感器获取的感测数据和测量值，以产生用于使用感测数据作为解释变量来预测处理结果的模型方程。 该装置包括：处理结果预测单元，其基于模型方程和感测数据预测处理结果;以及处理配方控制单元，其将预测的处理结果与预先设定的值进行比较，以控制处理条件或输入参数。 处理配方控制单元包括控制器，用于控制用于处理半导体晶片的多个不同处理性能中的至少一个。

公开(公告)号：US06923885B2

公开(公告)日：2005-08-02

申请号：US10732286

申请日：2003-12-11

申请人： Toshio Masuda ,  Tatehito Usui ,  Mitsuru Suehiro ,  Hiroshi Kanekiyo ,  Hideyuki Yamamoto ,  Kazue Takahashi ,  Hiromichi Enami

发明人： Toshio Masuda ,  Tatehito Usui ,  Mitsuru Suehiro ,  Hiroshi Kanekiyo ,  Hideyuki Yamamoto ,  Kazue Takahashi ,  Hiromichi Enami

IPC分类号： H01L21/3065 ,  H01J37/32 ,  H01L21/00 ,  C23C16/00

CPC分类号： H01L21/67069 ,  G01N21/68 ,  H01J37/32082 ,  H01J37/32935 ,  H01J37/32972

摘要： A plasma processing apparatus having a sample bench located in a vacuum chamber, a structure disposed at a position opposed to a sample placed on the sample bench and facing a plasma generated in the vacuum chamber, and at least one through-hole disposed in the structure through which a gas flows into the vacuum chamber. An optical transmitter is mounted on a back of the at least one through-hole through which light from the sample passes, which light is detected by way of the optical transmitter.

摘要翻译： 一种等离子体处理装置，其具有位于真空室中的样品台，设置在与放置在样品台上的样品相对的位置并且面对在真空室中产生的等离子体的结构，以及设置在该结构中的至少一个通孔 气体通过该气体流入真空室。 光传输器安装在所述至少一个通孔的背面上，来自所述样品的光通过所述至少一个通孔穿过，所述光通过所述光发射器检测。

公开(公告)号：US20050098706A1

公开(公告)日：2005-05-12

申请号：US10981780

申请日：2004-11-05

申请人： Makoto Mogamiya ,  Toshio Masuda

发明人： Makoto Mogamiya ,  Toshio Masuda

IPC分类号： G02B23/06 ,  G02B7/08 ,  G02B7/28 ,  G02B7/36 ,  G02B23/04 ,  H04N5/225 ,  H04N5/232 ,  H04N101/00 ,  G02B7/04

CPC分类号： H04N5/23212 ,  G02B7/08 ,  G02B23/04

摘要： A telescope main body, which includes an objective optical system, a focusing system, an imaging device which captures an object image, and a beam splitter. Further, the telescope main body includes a calibration system that performs a calibration operation for calibrating a position shift between an image forming position of the object image and a receiving surface of the imaging device caused by diopter variation of a user. The calibration system includes a focus driving system, a focus detecting system, and a controller. The calibration system performs the calibration operation based on a detection result by the focus detecting system in a situation where the user has achieved focusing of a visual image by manipulating a focus adjusting member.

摘要翻译： 望远镜主体，其包括物镜光学系统，聚焦系统，拍摄物体图像的成像装置和分束器。 此外，望远镜主体包括校准系统，其执行校准操作，用于校准由用户的屈光度变化引起的对象图像的图像形成位置和成像装置的接收表面之间的位置偏移。 校准系统包括聚焦驱动系统，焦点检测系统和控制器。 在用户通过操纵焦点调节构件来实现视觉图像的聚焦的情况下，校准系统基于焦点检测系统的检测结果执行校准操作。

公开(公告)号：US20050087298A1

公开(公告)日：2005-04-28

申请号：US10999006

申请日：2004-11-30

申请人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Akira Kagoshima ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda

发明人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Akira Kagoshima ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda

IPC分类号： G05B19/418 ,  H01L21/66 ,  C23F1/00

CPC分类号： H01L22/20 ,  G05B13/048 ,  G05B19/41865 ,  G05B23/024 ,  G05B2219/31357 ,  G05B2219/32058 ,  H01L21/67276 ,  H01L2924/0002 ,  Y02P90/12 ,  Y02P90/14 ,  Y02P90/18 ,  Y02P90/20 ,  H01L2924/00

摘要： A semiconductor processing apparatus for processing a semiconductor wafer includes a sensor for monitoring a processing state of the semiconductor processing apparatus, a processing result input unit which inputs measured values for processing results of a semiconductor wafer processed by the semiconductor processing apparatus, and a model equation generation unit relying on sensed data acquired by the sensor and the measured values to generate a model equation for predicting a processing result using the sensed data as an explanatory variable. The apparatus includes a processing result prediction unit which predicts a processing result based on the model equation and the sensed data, and a process recipe control unit which compares the predicted processing result with a previously set value to control a processing condition. The process recipe control unit includes a controller which controls at least one among a plurality of different processing performances for processing of the semiconductor wafer.

摘要翻译： 用于处理半导体晶片的半导体处理装置包括：用于监视半导体处理装置的处理状态的传感器;输入由半导体处理装置处理的半导体晶片的处理结果的测量值的处理结果输入单元;以及模型方程 依赖于由传感器获取的感测数据和测量值，以产生用于使用感测数据作为解释变量来预测处理结果的模型方程。 该装置包括：处理结果预测单元，其基于模型方程和感测数据预测处理结果;以及处理配方控制单元，其将预测处理结果与预先设定的值进行比较，以控制处理条件。 处理配方控制单元包括控制用于处理半导体晶片的多个不同处理性能中的至少一个的控制器。