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公开(公告)号：US08916927B2
公开(公告)日：2014-12-23
申请号：US13553405
申请日：2012-07-19
IPC分类号： H01L29/66 , H01L21/336
CPC分类号： H01L29/66977 , B82Y10/00 , H01L29/0657 , H01L29/0676 , H01L29/068 , H01L29/0688 , H01L29/1037 , H01L29/1054 , H01L29/205 , H01L29/42372 , H01L29/66356 , H01L29/66439 , H01L29/66522 , H01L29/66666 , H01L29/7391 , H01L29/775 , H01L29/7827
摘要： Among other things, one or more techniques for forming a vertical tunnel field effect transistor (FET), and a resulting vertical tunnel FET are provided herein. In an embodiment, the vertical tunnel FET is formed by forming a core over a first type substrate region, forming a second type channel shell around a circumference greater than a core circumference, forming a gate dielectric around a circumference greater than the core circumference, forming a gate electrode around a circumference greater than the core circumference, and forming a second type region over a portion of the second type channel shell, where the second type has a doping opposite a doping of the first type. In this manner, line tunneling is enabled, thus providing enhanced tunneling efficiency for a vertical tunnel FET.
摘要翻译： 除此之外，本文提供了用于形成垂直隧道场效应晶体管（FET）的一种或多种技术以及所产生的垂直隧道FET。 在一个实施例中，垂直隧道FET通过在第一类型的衬底区域上形成芯体形成，围绕围绕圆周的圆周形成第二类型沟道壳体，围绕围绕圆周的圆周形成栅极电介质，形成 围绕圆周大于芯圆周的栅电极，并且在第二类型沟槽壳体的一部分上形成第二类型区域，其中第二类型具有与第一类型的掺杂相反的掺杂。 以这种方式，能够进行线路隧道，从而为垂直隧道FET提供增强的隧道效率。
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公开(公告)号：US20140021532A1
公开(公告)日：2014-01-23
申请号：US13553405
申请日：2012-07-19
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66977 , B82Y10/00 , H01L29/0657 , H01L29/0676 , H01L29/068 , H01L29/0688 , H01L29/1037 , H01L29/1054 , H01L29/205 , H01L29/42372 , H01L29/66356 , H01L29/66439 , H01L29/66522 , H01L29/66666 , H01L29/7391 , H01L29/775 , H01L29/7827
摘要： Among other things, one or more techniques for forming a vertical tunnel field effect transistor (FET), and a resulting vertical tunnel FET are provided herein. In an embodiment, the vertical tunnel FET is formed by forming a core over a first type substrate region, forming a second type channel shell around a circumference greater than a core circumference, forming a gate dielectric around a circumference greater than the core circumference, forming a gate electrode around a circumference greater than the core circumference, and forming a second type region over a portion of the second type channel shell, where the second type has a doping opposite a doping of the first type. In this manner, line tunneling is enabled, thus providing enhanced tunneling efficiency for a vertical tunnel FET.
摘要翻译： 除此之外，本文提供了用于形成垂直隧道场效应晶体管（FET）的一种或多种技术以及所产生的垂直隧道FET。 在一个实施例中，垂直隧道FET通过在第一类型的衬底区域上形成芯体形成，围绕围绕圆周的圆周形成第二类型沟道壳体，围绕围绕圆周的圆周形成栅极电介质，形成 围绕圆周大于芯圆周的栅电极，并且在第二类型沟槽壳体的一部分上形成第二类型区域，其中第二类型具有与第一类型的掺杂相反的掺杂。 以这种方式，能够进行线路隧道，从而为垂直隧道FET提供增强的隧道效率。
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公开(公告)号：US09735239B2
公开(公告)日：2017-08-15
申请号：US13444695
申请日：2012-04-11
IPC分类号： H01L29/66 , H01L29/205 , H01L29/10 , H01L29/78
CPC分类号： H01L29/205 , H01L29/1054 , H01L29/66795 , H01L29/785
摘要： A system and method for a channel region is disclosed. An embodiment comprises a channel region with multiple bi-layers comprising alternating complementary materials such as layers of InAs and layers of GaSb. The alternating layers of complementary materials provide desirable band gap characteristics for the channel region as a whole that individual layers of material may not.
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公开(公告)号：US20130270607A1
公开(公告)日：2013-10-17
申请号：US13444695
申请日：2012-04-11
IPC分类号： H01L29/205 , H01L21/336 , H01L29/78
CPC分类号： H01L29/205 , H01L29/1054 , H01L29/66795 , H01L29/785
摘要： A system and method for a channel region is disclosed. An embodiment comprises a channel region with multiple bi-layers comprising alternating complementary materials such as layers of InAs and layers of GaSb. The alternating layers of complementary materials provide desirable band gap characteristics for the channel region as a whole that individual layers of material may not.
摘要翻译： 公开了一种用于信道区域的系统和方法。 一个实施例包括具有多个双层的沟道区，包括交替的互补材料，例如InAs层和GaSb层。 互补材料的交替层为通道区域提供期望的带隙特性，整体上材料的各层可能不是。
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公开(公告)号：US08604518B2
公开(公告)日：2013-12-10
申请号：US13307738
申请日：2011-11-30
IPC分类号： H01L29/66
CPC分类号： H01L29/66431 , H01L29/1054 , H01L29/205 , H01L29/267 , H01L29/66522 , H01L29/66795 , H01L29/785
摘要： A Fin Field-Effect Transistor (FinFET) includes a fin, which includes a channel splitter having a first bandgap, and a channel including a first portion and a second portion on opposite sidewalls of the channel splitter. The channel has a second bandgap smaller than the first bandgap. A gate electrode includes a first portion and a second portion on opposite sides of the fin. A gate insulator includes a first portion between the first portion of the gate electrode and the first portion of the channel, and a second portion between the second portion of the gate electrode and the second portion of the channel.
摘要翻译： 鳍场效应晶体管（FinFET）包括鳍，其包括具有第一带隙的沟道分离器和包括在沟道分离器的相对侧壁上的第一部分和第二部分的沟道。 通道具有小于第一带隙的第二带隙。 栅极电极包括在鳍片的相对侧上的第一部分和第二部分。 栅极绝缘体包括位于栅极电极的第一部分和沟道的第一部分之间的第一部分，以及栅电极的第二部分和沟道的第二部分之间的第二部分。
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公开(公告)号：US08471329B2
公开(公告)日：2013-06-25
申请号：US13298075
申请日：2011-11-16
IPC分类号： H01L29/78
CPC分类号： H01L29/7391 , H01L29/785
摘要： A tunnel field-effect transistor (TFET) includes a gate electrode, a source region, and a drain region. The source and drain regions are of opposite conductivity types. A channel region is disposed between the source region and the drain region. A source diffusion barrier is disposed between the channel region and the source region. The source diffusion barrier and the source region are under and overlapping the gate electrode. The source diffusion barrier has a first bandgap greater than second bandgaps of the source region, the drain region, and the channel region.
摘要翻译： 隧道场效应晶体管（TFET）包括栅电极，源极区和漏极区。 源区和漏区具有相反的导电类型。 沟道区域设置在源极区域和漏极区域之间。 源极扩散阻挡层设置在沟道区域和源极区域之间。 源极扩散阻挡层和源极区域在栅极电极下方并且重叠。 源极扩散阻挡层具有大于源极区域，漏极区域和沟道区域的第二带隙的第一带隙。
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公开(公告)号：US20130134481A1
公开(公告)日：2013-05-30
申请号：US13307738
申请日：2011-11-30
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66431 , H01L29/1054 , H01L29/205 , H01L29/267 , H01L29/66522 , H01L29/66795 , H01L29/785
摘要： A Fin Field-Effect Transistor (FinFET) includes a fin, which includes a channel splitter having a first bandgap, and a channel including a first portion and a second portion on opposite sidewalls of the channel splitter. The channel has a second bandgap smaller than the first bandgap. A gate electrode includes a first portion and a second portion on opposite sides of the fin. A gate insulator includes a first portion between the first portion of the gate electrode and the first portion of the channel, and a second portion between the second portion of the gate electrode and the second portion of the channel.
摘要翻译： 鳍场效应晶体管（FinFET）包括鳍，其包括具有第一带隙的沟道分离器和包括在沟道分离器的相对侧壁上的第一部分和第二部分的沟道。 通道具有小于第一带隙的第二带隙。 栅极电极包括在鳍片的相对侧上的第一部分和第二部分。 栅极绝缘体包括位于栅极电极的第一部分和沟道的第一部分之间的第一部分，以及栅电极的第二部分和沟道的第二部分之间的第二部分。
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公开(公告)号：US20130119395A1
公开(公告)日：2013-05-16
申请号：US13298075
申请日：2011-11-16
IPC分类号： H01L29/78
CPC分类号： H01L29/7391 , H01L29/785
摘要： A tunnel field-effect transistor (TFET) includes a gate electrode, a source region, and a drain region. The source and drain regions are of opposite conductivity types. A channel region is disposed between the source region and the drain region. A source diffusion barrier is disposed between the channel region and the source region. The source diffusion barrier and the source region are under and overlapping the gate electrode. The source diffusion barrier has a first bandgap greater than second bandgaps of the source region, the drain region, and the channel region.
摘要翻译： 隧道场效应晶体管（TFET）包括栅电极，源极区和漏极区。 源区和漏区具有相反的导电类型。 沟道区域设置在源极区域和漏极区域之间。 源极扩散阻挡层设置在沟道区域和源极区域之间。 源极扩散阻挡层和源极区域在栅极电极下方并且重叠。 源极扩散阻挡层具有大于源极区域，漏极区域和沟道区域的第二带隙的第一带隙。
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公开(公告)号：US08766364B2
公开(公告)日：2014-07-01
申请号：US13600369
申请日：2012-08-31
申请人： Gerben Doornbos , Mark van Dal
发明人： Gerben Doornbos , Mark van Dal
IPC分类号： H01L27/12
CPC分类号： H01L27/0207 , H01L21/823807 , H01L21/823821 , H01L21/845 , H01L27/1211 , H01L29/1054 , H01L29/7843
摘要： The present disclosure describes a layout for stress optimization. The layout includes a substrate, at least two fin field effect transistors (FinFET) cells formed in the substrate, a FinFET fin designed to cross the two FinFET cells, a plurality of gates formed on the substrate, and an isolation unit formed between the first FinFET cell and the second FinFET cell. The two FinFET cells include a first FinFET cell and a second FinFET cell. The FinFET fin includes a positive charge FinFET (Fin PFET) fin and a negative charge FinFET (Fin NFET) fin. The isolation unit isolates the first FinFET cell from the second FinFET cell without breaking the FinFET fin.
摘要翻译： 本公开描述了用于应力优化的布局。 该布局包括衬底，在衬底中形成的至少两个鳍状场效应晶体管（FinFET）单元，设计成跨过两个FinFET单元的FinFET鳍，形成在衬底上的多个栅极，以及形成在第一 FinFET单元和第二个FinFET单元。 两个FinFET单元包括第一FinFET单元和第二FinFET单元。 FinFET鳍片包括正电荷FinFET（Fin PFET）鳍和负电荷FinFET（Fin NFET）鳍。 隔离单元将第一FinFET单元与第二FinFET单元隔离，而不会破坏FinFET鳍。
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公开(公告)号：US20090114950A1
公开(公告)日：2009-05-07
申请号：US11597533
申请日：2005-05-19
IPC分类号： H01L21/336 , H01L21/8249 , H01L21/8232 , H01L29/78 , H01L29/80 , H01L21/8234 , H01L21/8248
CPC分类号： H01L21/8249
摘要： The invention relates to a semiconductor device (10) comprising a substrate (11) and a semiconductor body (1) of silicon having a semiconductor layer structure comprising, in succession, a first and a second semiconductor layer (2, 3), and having a surface region of a first conductivity type which is provided with a field effect transistor (M) with a channel of a second conductivity type, opposite to the first conductivity type, wherein the surface region is provided with source and drain regions (4A, 4B) of the second conductivity type for the field effect transistor (M) and with—interposed between said source and drain regions—a channel region (3A) with a lower doping concentration which forms part of the second semiconductor layer (3) and with a buried first-conductivity-type semiconductor region (2A), buried below the channel region (3A), with a doping concentration that is much higher than that of the channel region (3A) and which forms part of the first semiconductor layer (2). According to the invention, the semiconductor body (1) is provided not only with the field effect transistor (M) but also with a bipolar transistor (B) with emitter, base and collector regions (5A, 5B, 5C) of respectively the second, the first and the second conductivity type, and the emitter region (5A) is formed in the second semiconductor layer (3) and the base region (5B) is formed in the first semiconductor layer (2). In this way a Bi(C)MOS IC (10) is obtained which is very suitable for high-frequency applications and which is easy to manufacture using a method according to the invention. Preferably the first semiconductor layer (2) comprises Si—Ge and is delta-doped, whereas the second semiconductor layer (3) comprises strained Si.
摘要翻译： 本发明涉及一种半导体器件（10），它包括具有半导体层结构的硅衬底（12）和半导体本体（1），半导体层结构依次包括第一和第二半导体层（2,3），并且具有 具有与第一导电类型相反的具有第二导电类型的沟道的场效应晶体管（M）的第一导电类型的表面区域，其中所述表面区域设置有源极和漏极区域（4A，4B） ）和用于场效应晶体管（M）的第二导电类型，并且插入在所述源极和漏极区之间 - 具有较低掺杂浓度的沟道区（3A），其形成第二半导体层（3）的一部分，并且具有 埋入第一导电型半导体区域（2A），其掺杂在沟道区域（3A）的下方，掺杂浓度比沟道区域（3A）的掺杂浓度高得多，并且形成第一半导体层（2）的一部分， 。 根据本发明，半导体本体（1）不仅设置有场效应晶体管（M），而且还具有双极晶体管（B），发射极，基极和集电极区域（5A，5B，5C）分别为第二 第一和第二导电类型和发射极区域（5A）形成在第二半导体层（3）中，并且基极区域（5B）形成在第一半导体层（2）中。 以这种方式获得了非常适合于高频应用并且易于使用根据本发明的方法制造的Bi（C）MOS IC（10）。 优选地，第一半导体层（2）包括Si-Ge并且是δ掺杂的，而第二半导体层（3）包括应变Si。
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