利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

42 条记录 (耗时 0.029 秒)

    COUNTERFEIT PREVENTION PAPER AND MANUFACTURING METHOD THEREOF
    1.
    发明申请
    COUNTERFEIT PREVENTION PAPER AND MANUFACTURING METHOD THEREOF 有权
    防伪纸及其制造方法

    公开(公告)号：US20090047488A1

    公开(公告)日：2009-02-19

    申请号：US12189074

    申请日：2008-08-08

    申请人： Yang-Kyu Choi ,  Oktay Yarimaga ,  Kuk-Hwan Kim ,  Hyun Gyu Park ,  Tae Won Kim ,  Yun Kyung Jung

    发明人： Yang-Kyu Choi ,  Oktay Yarimaga ,  Kuk-Hwan Kim ,  Hyun Gyu Park ,  Tae Won Kim ,  Yun Kyung Jung

    IPC分类号： B32B3/10 ,  B05D1/36

    CPC分类号： D21H21/44 ,  B42D15/0033 ,  B42D25/29 ,  Y10T428/24934

    摘要： The present invention relates to a counterfeit prevention paper and manufacturing method thereof, and more particularly to currency, securities, official document and several certificates, etc.The counterfeit prevention paper according to the present invention comprises a paper and a thermopaint layer which is formed on a paper and is discolored according to a temperature.The counterfeit prevention paper according to the present invention can detect easily a counterfeit by an unaided eye. Also, a function for preventing a counterfeit is not copied by a counterfeit device, thus the counterfeit prevent paper according to the present invention can improve a reliability of various official documents and several certificates, etc.

    摘要翻译： 本发明涉及防伪纸及其制造方法，更具体地涉及货币，证券，官方文件和若干证书等。根据本发明的防伪纸包括纸和热电影层，其形成在 一张纸，根据温度变色。 根据本发明的防伪纸可以通过肉眼容易地检测伪造的伪造品。 此外，防伪品的功能不被仿冒装置复制，因此根据本发明的防伪纸可以提高各种官方文件和几种证书等的可靠性。

    Counterfeit prevention paper and manufacturing method thereof
    2.
    发明授权
    Counterfeit prevention paper and manufacturing method thereof 有权
    防伪纸及其制造方法

    公开(公告)号：US08105977B2

    公开(公告)日：2012-01-31

    申请号：US12189074

    申请日：2008-08-08

    申请人： Kuk-Hwan Kim ,  Yang-Kyu Choi ,  Oktay Yarimaga ,  Hyun Gyu Park ,  Tae Won Kim ,  Yun Kyung Jung

    发明人： Kuk-Hwan Kim ,  Yang-Kyu Choi ,  Oktay Yarimaga ,  Hyun Gyu Park ,  Tae Won Kim ,  Yun Kyung Jung

    IPC分类号： B41M5/26

    CPC分类号： D21H21/44 ,  B42D15/0033 ,  B42D25/29 ,  Y10T428/24934

    摘要： The present invention relates to a counterfeit prevention paper and manufacturing method thereof, and more particularly to currency, securities, official document and several certificates, etc.The counterfeit prevention paper according to the present invention comprises a paper and a thermopaint layer which is formed on a paper and is discolored according to a temperature.The counterfeit prevention paper according to the present invention can detect easily a counterfeit by an unaided eye. Also, a function for preventing a counterfeit is not copied by a counterfeit device, thus the counterfeit prevent paper according to the present invention can improve a reliability of various official documents and several certificates, etc.

    摘要翻译： 本发明涉及防伪纸及其制造方法，更具体地涉及货币，证券，官方文件和若干证书等。根据本发明的防伪纸包括纸和热电影层，其形成在 一张纸，根据温度变色。 根据本发明的防伪纸可以通过肉眼容易地检测伪造的伪造品。 此外，防伪品的功能不被仿冒装置复制，因此根据本发明的防伪纸可以提高各种官方文件和几种证书等的可靠性。

    NON-VOLATILE MEMORY CELL AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    NON-VOLATILE MEMORY CELL AND METHOD OF MANUFACTURING THE SAME 有权
    非挥发性记忆体及其制造方法

    公开(公告)号：US20080277719A1

    公开(公告)日：2008-11-13

    申请号：US12048449

    申请日：2008-03-14

    申请人： Yang-Kyu Choi ,  Kuk-Hwan Kim

    发明人： Yang-Kyu Choi ,  Kuk-Hwan Kim

    IPC分类号： H01L21/8239 ,  H01L27/11

    CPC分类号： H01L21/28273 ,  B82Y10/00 ,  H01L27/115 ,  H01L27/11517 ,  H01L29/4234 ,  H01L29/51 ,  H01L29/511 ,  H01L29/792 ,  H01L51/0046 ,  H01L51/0048

    摘要： The present invention relates to a non-volatile memory cell and a method of fabricating the same. The non-volatile memory cell according to the present invention comprises a substrate, a first oxide film formed over an active region of the substrate, a source and drain formed within the active region, a charge storage unit formed on the first oxide film, a second oxide film configured to surround the charge storage unit and formed on the first oxide film, and a gate formed to surround the second oxide film. According to the non-volatile memory cell and a cell array including the same in accordance with the present invention, the charge storage unit is fully surrounded by the gate or the gate line, thus a disturbance phenomenon that may occur due to the memory operation of cells formed in other neighboring gate or gate line can be minimized.

    摘要翻译： 本发明涉及一种非易失性存储单元及其制造方法。 根据本发明的非易失性存储单元包括衬底，形成在衬底的有源区上的第一氧化物膜，在有源区内形成的源极和漏极，形成在第一氧化物膜上的电荷存储单元， 第二氧化物膜被构造成围绕电荷存储单元并形成在第一氧化物膜上，以及形成为围绕第二氧化物膜的栅极。 根据本发明的非易失性存储单元和包括该存储单元的单元阵列，电荷存储单元被栅极或栅极线完全包围，因此可能由于存储器操作而发生的干扰现象 在其他相邻栅极或栅极线上形成的电池可以最小化。

    Non-volatile memory cell and non-volatile memory cell array with minimized influence from neighboring cells
    4.
    发明授权
    Non-volatile memory cell and non-volatile memory cell array with minimized influence from neighboring cells 有权
    非易失性存储单元和非易失性存储单元阵列，其邻近单元的影响最小

    公开(公告)号：US08008706B2

    公开(公告)日：2011-08-30

    申请号：US12048449

    申请日：2008-03-14

    申请人： Yang-Kyu Choi ,  Kuk-Hwan Kim

    发明人： Yang-Kyu Choi ,  Kuk-Hwan Kim

    IPC分类号： H01L29/788

    CPC分类号： H01L21/28273 ,  B82Y10/00 ,  H01L27/115 ,  H01L27/11517 ,  H01L29/4234 ,  H01L29/51 ,  H01L29/511 ,  H01L29/792 ,  H01L51/0046 ,  H01L51/0048

    摘要： The present invention relates to a non-volatile memory cell and a method of fabricating the same. The non-volatile memory cell according to the present invention comprises a substrate, a first oxide film formed over an active region of the substrate, a source and drain formed within the active region, a charge storage unit formed on the first oxide film, a second oxide film configured to surround the charge storage unit and formed on the first oxide film, and a gate formed to surround the second oxide film. According to the non-volatile memory cell and a cell array including the same in accordance with the present invention, the charge storage unit is fully surrounded by the gate or the gate line, thus a disturbance phenomenon that may occur due to the memory operation of cells formed in other neighboring gate or gate line can be minimized.

    摘要翻译： 本发明涉及一种非易失性存储单元及其制造方法。 根据本发明的非易失性存储单元包括衬底，形成在衬底的有源区上的第一氧化物膜，在有源区内形成的源极和漏极，形成在第一氧化物膜上的电荷存储单元， 第二氧化物膜被构造成围绕电荷存储单元并形成在第一氧化物膜上，以及形成为围绕第二氧化物膜的栅极。 根据本发明的非易失性存储单元和包括该存储单元的单元阵列，电荷存储单元被栅极或栅极线完全包围，因此可能由于存储器操作而发生的干扰现象 在其他相邻栅极或栅极线上形成的电池可以最小化。

    Phase change memory device using carbon nanotube and method for fabricating the same
    6.
    发明授权
    Phase change memory device using carbon nanotube and method for fabricating the same 有权
    使用碳纳米管的相变存储器件及其制造方法

    公开(公告)号：US07749801B2

    公开(公告)日：2010-07-06

    申请号：US11610341

    申请日：2006-12-13

    申请人： Yang-Kyu Choi ,  Kuk-Hwan Kim

    发明人： Yang-Kyu Choi ,  Kuk-Hwan Kim

    IPC分类号： H01L21/00

    CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C13/0004 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/16 ,  Y10S977/70 ,  Y10S977/742 ,  Y10S977/75 ,  Y10S977/752

    摘要： Provided are a phase change memory device that can operate at low power and improve the scale of integration by reducing a contact area between a phase change material and a bottom electrode, and a method for fabricating the same. The phase change memory comprises a current source electrode, a phase change material layer, a plurality of carbon nanotube electrodes, and an insulation layer. The current source electrode supplies external current to a target. The phase change material layer is disposed to face the current source electrode in side direction. The carbon nanotube electrodes are disposed between the current source electrode and the phase change material layer. The insulation layer is formed outside the carbon nanotube electrodes and functions to reduce the loss of heat generated at the carbon nanotube electrodes.

    摘要翻译： 提供一种相变存储器件及其制造方法，该相变存储器件能够以低功率工作，并且通过减小相变材料和底部电极之间的接触面积来提高积分规模。 相变存储器包括电流源电极，相变材料层，多个碳纳米管电极和绝缘层。 电流源电极向目标提供外部电流。 相变材料层被设置为在侧面方向与电流源电极相对。 碳纳米管电极设置在电流源电极和相变材料层之间。 绝缘层形成在碳纳米管电极的外侧，起减少碳纳米管电极产生的热量的作用。

    PHASE CHANGE MEMORY DEVICE USING CARBON NANOTUBE AND METHOD FOR FABRICATING THE SAME
    8.
    发明申请
    PHASE CHANGE MEMORY DEVICE USING CARBON NANOTUBE AND METHOD FOR FABRICATING THE SAME 有权
    使用碳纳米管的相变存储器件及其制造方法

    公开(公告)号：US20070158697A1

    公开(公告)日：2007-07-12

    申请号：US11610341

    申请日：2006-12-13

    申请人： Yang-Kyu Choi ,  Kuk-Hwan Kim

    发明人： Yang-Kyu Choi ,  Kuk-Hwan Kim

    IPC分类号： H01L29/768

    CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C13/0004 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/16 ,  Y10S977/70 ,  Y10S977/742 ,  Y10S977/75 ,  Y10S977/752

    摘要： Provided are a phase change memory device that can operate at low power and improve the scale of integration by reducing a contact area between a phase change material and a bottom electrode, and a method for fabricating the same. The phase change memory comprises a current source electrode, a phase change material layer, a plurality of carbon nanotube electrodes, and an insulation layer. The current source electrode supplies external current to a target. The phase change material layer is disposed to face the current source electrode in side direction. The carbon nanotube electrodes are disposed between the current source electrode and the phase change material layer. The insulation layer is formed outside the carbon nanotube electrodes and functions to reduce the loss of heat generated at the carbon nanotube electrodes.

    摘要翻译： 提供一种相变存储器件及其制造方法，该相变存储器件能够以低功率工作，并且通过减小相变材料和底部电极之间的接触面积来提高积分规模。 相变存储器包括电流源电极，相变材料层，多个碳纳米管电极和绝缘层。 电流源电极向目标提供外部电流。 相变材料层被设置为在侧面方向与电流源电极相对。 碳纳米管电极设置在电流源电极和相变材料层之间。 绝缘层形成在碳纳米管电极的外侧，起减少碳纳米管电极产生的热量的作用。

    Flavanone derivatives and composition for preventing or treating blood lipid level-related diseases comprising same
    10.
    发明授权
    Flavanone derivatives and composition for preventing or treating blood lipid level-related diseases comprising same 失效
    用于预防或治疗包含其的血脂水平相关疾病的黄酮酮衍生物和组合物

    公开(公告)号：US06455577B2

    公开(公告)日：2002-09-24

    申请号：US09768740

    申请日：2001-01-24

    申请人： Song-Hae Bok ,  Tae-Sook Jeong ,  Sang-Ku Lee ,  Ju-Ryong Kim ,  Surk-Sik Moon ,  Myung-Sook Choi ,  Byung-Hwa Hyun ,  Chul-Ho Lee ,  Yang-Kyu Choi

    发明人： Song-Hae Bok ,  Tae-Sook Jeong ,  Sang-Ku Lee ,  Ju-Ryong Kim ,  Surk-Sik Moon ,  Myung-Sook Choi ,  Byung-Hwa Hyun ,  Chul-Ho Lee ,  Yang-Kyu Choi

    IPC分类号： A61K3135

    CPC分类号： A23L2/52 ,  A23L13/42 ,  A23L27/63 ,  A23L33/105 ,  A23V2002/00 ,  C07D311/32 ,  A23V2250/2116

    摘要： A compound of formula (I) treating or preventing an elevated blood lipid level-related disease and inhibiting the activities of acyl-CoA:cholesterol-O-acyltransferase(ACAT) and 3-hydroxy-3-methylglutaryl CoA(HMG-CoA) reductase: wherein, R1 is R5 R6CO group; R2 is H or R6CO group; R3 is H, CH3, R5 or R6CO group; R4 is H, OH, OR5 or R6COO group; R5 is a C2-5 alkyl group substituted with a phenyl group optionally having one or more substituents selected from the group consisting of C1-3 alkyl, OH, Cl and NO2; a C1-5 alkyl group substituted with a naphthyl group optionally having one or more substituents selected from the group consisting of C1-3 alkyl, OH, Cl and NO2; a C10-18 alkyl; or a C10-18 alkenyl group; and R6 is a C10-18 alkenyl group; or an aryl group optionally having one or more substituents selected from the group consisting of C1-3 alkyl, OH, Cl or NO2.

    摘要翻译： 治疗或预防血脂水平升高相关疾病和抑制酰基辅酶A：胆固醇-O-酰基转移酶（ACAT）和3-羟基-3-甲基戊二酰辅酶A（HMG-CoA）还原酶活性的式（I）化合物 其中，R1为R5 R6CO基; R2为H或R6CO基; R3为H，CH3，R5或R6CO基; R4为H，OH，OR5或R6COO基; R5为被苯基取代的C2-5烷基 基团任选具有一个或多个选自C 1-3烷基，OH，Cl和NO 2的取代基; 被任选具有一个或多个选自C 1-3烷基，OH，Cl和NO 2的取代基的萘基取代的C 1-5烷基; C10-18烷基; 或C 10-18烯基; 和R6是C10-18烯基; 或任选具有一个或多个选自C 1-3烷基，OH，Cl或NO 2的取代基的芳基。