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    Random access memory
    1.
    发明授权
    Random access memory 失效
    随机存取存储器

    公开(公告)号：US4085458A

    公开(公告)日：1978-04-18

    申请号：US690303

    申请日：1976-05-26

    申请人： Kunihiko Ikuzaki ,  Tsuneo Ito ,  Masamichi Ishihara ,  Takashi Sato

    发明人： Kunihiko Ikuzaki ,  Tsuneo Ito ,  Masamichi Ishihara ,  Takashi Sato

    IPC分类号： G11C11/407 ,  G11C7/02 ,  G11C11/405

    CPC分类号： G11C11/405

    摘要： In a n-channel (or p-channel) random access memory in which a plurality of memory cells are arranged in a matrix form in a p-type (or n-type) semiconductor substrate, clamping MOSFET's are connected between word lines provided for the associated rows of memory cells of the matrix and a reference potential to which gates the source electrodes of the information storing MOSFET's of the memory cells are connected. The clamping MOSFET has a lower threshold voltage than a row selecting MOSFET connected to the word line and clamps the word line when the word line is not selected, so that a delay in the read-out operation is eliminated or suppressed.

    摘要翻译： 在p沟道（或p沟道）随机存取存储器中，多个存储单元以矩阵形式布置在p型（或n型）半导体衬底中，钳位MOSFET连接在用于 矩阵的相关行的存储单元和存储单元的存储MOSFET的信息的源电极的栅极的参考电位。 钳位MOSFET具有比连接到字线的行选择MOSFET低的阈值电压，并且当未选择字线时钳位字线，从而消除或抑制读出操作的延迟。

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    2.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
    半导体器件的制造方法

    公开(公告)号：US20090215247A1

    公开(公告)日：2009-08-27

    申请号：US12434637

    申请日：2009-05-02

    申请人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

    发明人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

    IPC分类号： H01L21/304

    CPC分类号： H01L21/67092 ,  H01L21/78 ,  H01L2224/06181 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00

    摘要： Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.

    摘要翻译： 在扫描装置（1）的盖（8）的前表面和后表面上布置照射波长为1.1μm以下的光的照明装置（7a）和（7b）。 在将晶片放置在切割台（3）上之后，当通过安装在主轴（5）上的刀片（4a）切割晶片时，将光照射在上表面（元件形成表面）的整个表面上 晶片通过照明装置（7a）和（7b）。 此时，晶片上的光的照度设定为70勒克司以上且2000lux以下。 通过这种方式，在切割操作期间，晶片上不存在由主轴（5）等构成遮光区域的区域。

    Light illumination during wafer dicing to prevent aluminum corrosion
    3.
    发明授权
    Light illumination during wafer dicing to prevent aluminum corrosion 有权
    晶圆切割时的光照，防止铝腐蚀

    公开(公告)号：US07998793B2

    公开(公告)日：2011-08-16

    申请号：US12434637

    申请日：2009-05-02

    申请人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

    发明人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

    IPC分类号： H01L21/00

    CPC分类号： H01L21/67092 ,  H01L21/78 ,  H01L2224/06181 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00

    摘要： Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.

    摘要翻译： 在切割装置（1）的盖（8）的前表面和后表面上布置照射波长为1.1μm以下的光的照明装置（7a）和（7b）。 在将晶片放置在切割台（3）上之后，当通过安装在主轴（5）上的刀片（4a）切割晶片时，将光照射在上表面（元件形成表面）的整个表面上 晶片通过照明装置（7a）和（7b）。 此时，晶片上的光的照度设定为70勒克司以上且2000lux以下。 通过这种方式，在切割操作期间，晶片上不存在由主轴（5）等构成遮光区域的区域。

    Manufacturing Method of Semiconductor Device
    4.
    发明申请
    Manufacturing Method of Semiconductor Device 审中-公开
    半导体器件的制造方法

    公开(公告)号：US20080138962A1

    公开(公告)日：2008-06-12

    申请号：US11632993

    申请日：2004-07-22

    申请人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

    发明人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

    IPC分类号： H01L21/304

    CPC分类号： H01L21/67092 ,  H01L21/78 ,  H01L2224/06181 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00

    摘要： Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.

    摘要翻译： 在切割装置（1）的盖（8）的前表面和后表面上布置照射具有1.1μm或更小的波长的光的照明装置（7a）和（7b）。 在将晶片放置在切割台（3）上之后，当通过安装在主轴（5）上的刀片（4a）切割晶片时，将光照射在上表面（元件形成表面）的整个表面上 通过照明装置（7a）和（7b）的晶片。 此时，晶片上的光的照度设定为70勒克司以上且2000lux以下。 通过这种方式，在切割操作期间，晶片上不存在由主轴（5）等构成遮光区域的区域。

    Containment vessel and nuclear power plant
    6.
    发明授权
    Containment vessel and nuclear power plant 有权

    公开(公告)号：US09818495B2

    公开(公告)日：2017-11-14

    申请号：US13988966

    申请日：2011-09-14

    申请人： Takashi Sato

    发明人： Takashi Sato

    IPC分类号： G21C13/10 ,  G21C13/00 ,  G21C9/004 ,  G21C9/008 ,  G21C9/06 ,  G21C15/18 ,  G21F9/02

    CPC分类号： G21C13/00 ,  G21C9/004 ,  G21C9/008 ,  G21C9/06 ,  G21C13/10 ,  G21C15/18 ,  G21F9/02 ,  Y02E30/40

    摘要： A containment vessel has an inner shell covering a reactor pressure vessel and an outer shell forming an outer well which is a gas-tight space covering the horizontal outer periphery of the inner shell. The inner shell has a first cylindrical side wall surrounding the horizontal periphery of the reactor pressure vessel, a containment vessel head which covers the upper part of the reactor pressure vessel, and a first top slab connecting in a gas-tight manner the periphery of the containment vessel head and the upper end of the first cylindrical side wall. The outer shell has a second cylindrical side wall surrounding the outer periphery of the first cylindrical side wall, and also has a second to slab connecting in a gas-tight manner the vicinity of the upper end of the second cylindrical side wall and the first cylindrical side wall.

    Power supply circuit and apparatus including the circuit
    7.
    发明授权
    Power supply circuit and apparatus including the circuit 有权

    公开(公告)号：US09653994B2

    公开(公告)日：2017-05-16

    申请号：US13215035

    申请日：2011-08-22

    申请人： Katsumi Taguchi ,  Takashi Sato

    发明人： Katsumi Taguchi ,  Takashi Sato

    IPC分类号： G01R31/00 ,  H02M3/158 ,  H02M1/36

    CPC分类号： H02M3/158 ,  H02M1/36

    摘要： A power supply device supplying power to a device via a power line is provided, where the power supply device includes a first voltage generation unit configured to generate and supply a first direct voltage to the power line, a second voltage generation unit configured to generate and supply a second direct voltage lower than the first direct voltage to the power line, a measurement unit configured to measure a voltage of the power line, a control unit configured to control supply of the first direct voltage with the first voltage generation unit after starting supply of the second direct voltage with the second voltage generation unit, and a determination unit configured to determine a state of the power supply device based on the measured voltage and a first threshold value after starting the supply of the second direct voltage.

    Method for producing fuel cell electrode catalyst, fuel cell electrode catalyst, and uses thereof
    8.
    发明授权
    Method for producing fuel cell electrode catalyst, fuel cell electrode catalyst, and uses thereof 有权
    燃料电池用电极催化剂的制造方法，燃料电池用电极催化剂及其用途

    公开(公告)号：US09350025B2

    公开(公告)日：2016-05-24

    申请号：US13979305

    申请日：2011-08-09

    申请人： Ryuji Monden ,  Takuya Imai ,  Yasuaki Wakizaka ,  Kunchan Lee ,  Takashi Sato

    发明人： Ryuji Monden ,  Takuya Imai ,  Yasuaki Wakizaka ,  Kunchan Lee ,  Takashi Sato

    IPC分类号： H01M4/90 ,  H01M4/88 ,  B01J31/16 ,  B01J31/18

    CPC分类号： H01M4/9008 ,  B01J31/1658 ,  B01J31/1815 ,  B01J2231/324 ,  B01J2231/4205 ,  B01J2231/46 ,  B01J2231/70 ,  B01J2531/821 ,  B01J2531/827 ,  H01M4/88 ,  H01M4/9041 ,  H01M4/9083 ,  Y02E60/50

    摘要： A method for producing a fuel cell electrode catalyst including a metal element selected from aluminum, chromium, manganese, iron, cobalt, nickel, copper, strontium, yttrium, tin, tungsten, and cerium and having high catalytic activity through heat treatment at comparatively low temperature. The method including: a step (1) of mixing at least a certain metal compound (1), a nitrogen-containing organic compound (2), and a solvent to obtain a catalyst precursor solution, a step (2) of removing the solvent from the catalyst precursor solution, and a step (3) of heat-treating a solid residue, obtained in the step (2), at a temperature of 500 to 1100° C. to obtain an electrode catalyst; a portion or the entirety of the metal compound (1) being a compound containing, as the metal element, a metal element M1 selected from aluminum, chromium, manganese, iron, cobalt, nickel, copper, strontium, yttrium, tin, tungsten, and cerium.

    摘要翻译： 一种生产包括选自铝，铬，锰，铁，钴，镍，铜，锶，钇，锡，钨和铈的金属元素的燃料电池电极催化剂的方法，并且通过相对较低的热处理具有高催化活性 温度。 该方法包括：将至少一种金属化合物（1），含氮有机化合物（2）和溶剂混合以获得催化剂前体溶液的步骤（1），除去溶剂的步骤（2） 和催化剂前体溶液的步骤（3）和步骤（2）中获得的固体残渣热处理步骤（3），在500〜1100℃的温度下进行，得到电极催化剂; 金属化合物（1）的一部分或全部是含有选自铝，铬，锰，铁，钴，镍，铜，锶，钇，锡，钨中的金属元素M1作为金属元素的化合物， 和铈。

    Method for manufacturing glass blank for magnetic disk, method for manufacturing glass substrate for magnetic disk
    9.
    发明授权
    Method for manufacturing glass blank for magnetic disk, method for manufacturing glass substrate for magnetic disk 有权
    磁盘用玻璃坯料的制造方法，磁盘用玻璃基板的制造方法

    公开(公告)号：US09336810B2

    公开(公告)日：2016-05-10

    申请号：US13982877

    申请日：2012-04-27

    申请人： Hideki Isono ,  Hidekazu Tanino ,  Akira Murakami ,  Takashi Sato ,  Masamune Sato ,  Masaru Onishi

    发明人： Hideki Isono ,  Hidekazu Tanino ,  Akira Murakami ,  Takashi Sato ,  Masamune Sato ,  Masaru Onishi

    IPC分类号： C03B11/12 ,  G11B5/84 ,  C03B11/08

    CPC分类号： G11B5/8404 ,  C03B11/088 ,  C03B11/122 ,  C03B11/125 ,  C03B2215/07 ,  C03B2215/70 ,  Y02P40/57

    摘要： A method for manufacturing a glass substrate for magnetic disk is provided in which a glass is kept from being fused to a mold during press forming and shape processing to achieve a good circularity is efficiently performed. The method includes: a forming process of forming a disk-shaped glass blank by direct-pressing a molten glass by a pair of dies; and a shape processing process of performing at least one of inner hole formation and outer shape formation for forming a disk-shaped glass substrate by forming a cutting line on the principal face of the glass blank, followed by growing the cutting line to perform cutting. In the forming process, press forming is performed while the temperature of the pair of dies, over a period of time until a molten glass is separated from the die after coming into contact with the die, is set at a temperature lower than a glass transition point (Tg) and a mold release material is not attached to the surfaces of the pair of dies.

    摘要翻译： 提供一种用于制造用于磁盘的玻璃基板的方法，其中在压制成形期间保持玻璃不熔化到模具，并且有效地执行形状处理以实现良好的圆形度。 该方法包括：通过一对模具直接压制熔融玻璃来形成盘状玻璃坯料的成形过程; 以及通过在玻璃坯料的主面上形成切割线，进行用于形成圆盘状的玻璃基板的内孔形成和外形形成中的至少一种的形状加工工序，然后使切割线成长进行切削。 在成形过程中，一边进行压制成形，一边在与模具接触的熔融玻璃与模具分离一段时间的一段时间内，将其设定为低于玻璃化转变温度 点（Tg）和脱模材料未附接到该对模具的表面。