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    Positive photoresist composition
    1.
    发明授权
    Positive photoresist composition 有权
    正光致抗蚀剂组合物

    公开(公告)号：US06485883B2

    公开(公告)日：2002-11-26

    申请号：US09769375

    申请日：2001-01-26

    申请人： Kunihiko Kodama ,  Shinichi Kanna ,  Toshiaki Aoai

    发明人： Kunihiko Kodama ,  Shinichi Kanna ,  Toshiaki Aoai

    IPC分类号： G03F7039

    CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/126

    摘要： A positive photoresist composition which comprises (A) a resin having a group which decomposes by the action of an acid to increase solubility in an alkaline developing solution, and (B) a compound which generates an aliphatic or aromatic carboxylic acid substituted with at least one fluorine atom upon irradiation with an actinic ray or radiation. The positive photoresist composition of the present invention is improved in resolution and process allowance such as exposure margin and depth of focus in a lithographic technology using a light source having a short wavelength capable of conducting the ultra fine fabrication and a chemical amplification-type positive photoresist. Further, it exhibits the excellent performance when an electron beam is used as a light source for exposure.

    摘要翻译： 一种正型光致抗蚀剂组合物，其包含（A）具有通过酸的作用分解以提高在碱性显影液中的溶解度的基团的树脂，和（B）产生被至少一个 通过光化射线或辐射照射，本发明的正性光致抗蚀剂组合物在使用具有短波长能够导电的光源的光刻技术中的分辨率和工艺容限（例如曝光余量和焦深）方面得到改善 超精细制造和化学放大型正性光致抗蚀剂。 此外，当使用电子束作为曝光用光源时，其表现出优异的性能。

    Positive resist composition
    3.
    发明授权
    Positive resist composition 有权
    正抗蚀剂组成

    公开(公告)号：US06852467B2

    公开(公告)日：2005-02-08

    申请号：US09961281

    申请日：2001-09-25

    申请人： Toshiaki Aoai ,  Shoichiro Yasunami ,  Kazuyoshi Mizutani ,  Shinichi Kanna

    发明人： Toshiaki Aoai ,  Shoichiro Yasunami ,  Kazuyoshi Mizutani ,  Shinichi Kanna

    IPC分类号： G03F7/004 ,  G03F7/039 ,  H01L21/027

    CPC分类号： G03F7/0046 ,  G03F7/0392 ,  G03F7/0395 ,  Y10S430/108

    摘要： A positive resist composition comprising: (A) a fluorine group-containing resin having: a structure wherein at least one of the main chain and the side chain of the polymer skeleton has at least one fluorine atom; and having a group capable of decomposing under the action of an acid to increase the solubility in an alkali developer; (B) a compound capable of generating an acid upon irradiation with one of actinic ray and radiation, and (C) a surfactant containing at least one of a silicon atom and a fluorine atom.

    摘要翻译： 一种正型抗蚀剂组合物，其包含：（A）含氟基树脂，其具有以下结构：其中所述聚合物骨架的主链和侧链中的至少一个具有至少一个氟原子; 并且具有能够在酸的作用下能够分解以增加在碱性显影剂中的溶解度的基团;（B）在用光化学射线和辐射之一照射时能够产生酸的化合物，和（C）含有 硅原子和氟原子中的至少一个。

    Positive-working resist composition
    6.
    发明授权
    Positive-working resist composition 有权
    正面抗蚀剂组成

    公开(公告)号：US06602646B1

    公开(公告)日：2003-08-05

    申请号：US09684888

    申请日：2000-10-06

    申请人： Kenichiro Sato ,  Kunihiko Kodama ,  Toshiaki Aoai

    发明人： Kenichiro Sato ,  Kunihiko Kodama ,  Toshiaki Aoai

    IPC分类号： G03F7004

    CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/106

    摘要： The present invention provides a high sensitivity chemically amplified positive-working resist composition which eliminates edge roughness on pattern and provides an excellent resist pattern profile. A novel positive-working resist composition is provided comprising (A) a resin containing an alkali-soluble group protected by at least one of moieties containing alicyclic hydrocarbon represented by general formulae (pI) to (pVI) and having a monomer component content of 5% or less of the total pattern area as determined by gel permeation chromatography (GPC), which increases in its solution velocity with respect to an alkaline developer by the action of an acid and (B) a compound which is capable of generating an acid by irradiation with an active ray or radiation.

    摘要翻译： 本发明提供一种消除图案上的边缘粗糙度并提供优异的抗蚀剂图案轮廓的高灵敏度化学放大正性抗蚀剂组合物。 提供了一种新型的正性抗蚀剂组合物，其包含（A）含有由至少一个含有由通式（pI）至（pVI）表示的脂环族烃部分并且单体组分含量为5的部分保护的碱溶性基团的树脂 通过凝胶渗透色谱法（GPC）确定的总图案面积的百分比或更少，其通过酸的作用相对于碱性显影剂的溶液速度增加，和（B）能够产生酸的化合物 用活性射线或辐射照射。

    Positive photoresist composition
    7.
    发明授权
    Positive photoresist composition 有权
    正光致抗蚀剂组合物

    公开(公告)号：US06576392B1

    公开(公告)日：2003-06-10

    申请号：US09456827

    申请日：1999-12-06

    申请人： Kenichiro Sato ,  Kunihiko Kodama ,  Toshiaki Aoai ,  Hidekazu Ohashi

    发明人： Kenichiro Sato ,  Kunihiko Kodama ,  Toshiaki Aoai ,  Hidekazu Ohashi

    IPC分类号： G03C173

    CPC分类号： G03F7/0045 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115

    摘要： A positive photoresist composition comprising a photo-acid gererator and a specific resin. The resin contains repeating units each having a group represented by formula (I): —SO2—O—R wherein R represents an optionally substituted alkyl, cycloalkyl, or alkenyl group and comes to have an increased rate of dissolution in an alkaline developing solution by the action of an acid, or contains alkali-soluble groups protected by partial structures containing an alicyclic hydrocarbon and represented by at least one of formulae (pI) to (pVI) defined in the specification and which decomposes by the action of an acid to have enhanced solubility in an alkali. The latter is used in combination with a compound which decomposes by the action of an acid to generate a sulfonic acid.

    摘要翻译： 一种正型光致抗蚀剂组合物，其包含光酸注射器和特定树脂。 树脂含有各自具有由式（I）表示的基团的重复单元：其中R表示任选取代的烷基，环烷基或烯基，并且通过酸的作用使碱显影溶液的溶解速率增加， 或含有由说明书中定义的至少一种式（pI）至（pVI）表示的含有脂环族烃的部分结构保护的碱溶性基团，其通过酸的作用而分解，从而具有增强的在碱中的溶解度。 后者与通过酸的作用分解以产生磺酸的化合物组合使用。

    Positive photosensitive composition
    8.
    发明授权
    Positive photosensitive composition 失效

    公开(公告)号：US06517991B1

    公开(公告)日：2003-02-11

    申请号：US09606681

    申请日：2000-06-30

    申请人： Kunihiko Kodama ,  Kenichiro Sato ,  Toshiaki Aoai

    发明人： Kunihiko Kodama ,  Kenichiro Sato ,  Toshiaki Aoai

    IPC分类号： G03F7004

    CPC分类号： G03F7/0397 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/111

    摘要： A positive photosensitive composition comprising (A) a compound which generates an acid upon irradiation with an actinic ray or radiation, and (B-1) a resin having a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution and containing at least one structure represented by formulae (I), (II) and (III) as described in the specification or (B-2) a resin having at least one monovalent polyalicyclic group represented by formula (Ib) as described in the specification and a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution. The positive photosensitive composition containing the resin according to the present invention has high transmittance to far ultraviolet light particularly having a wavelength of 220 nm or less and exhibits good dry etching resistance. Further, the positive photosensitive composition exhibits high sensitivity, good resolution and good pattern profile when far ultraviolet light having a wavelength of 250 nm or less, particularly 220 nm or less (especially an ArF excimer laser beam) is employed as an exposure light source, and thus it can be effectively employed for the formation of fine pattern necessary for the production of semiconductor elements.

    Positive photosensitive composition
    9.
    发明授权
    Positive photosensitive composition 失效
    正光敏组合物

    公开(公告)号：US5981140A

    公开(公告)日：1999-11-09

    申请号：US932168

    申请日：1997-09-17

    申请人： Kenichiro Sato ,  Kunihiko Kodama ,  Kazuya Uenishi ,  Toshiaki Aoai

    发明人： Kenichiro Sato ,  Kunihiko Kodama ,  Kazuya Uenishi ,  Toshiaki Aoai

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027

    CPC分类号： G03F7/0045 ,  Y10S430/115 ,  Y10S430/121 ,  Y10S430/122

    摘要： A positive photosensitive composition comprising:a compound represented by formula (I) or (I') and a compound represented by formula (II) as compounds which generate a sulfonic acid upon irradiation with actinic rays or radiation: ##STR1## The substituents in these formulae are as defined in the specification. The positive photosensitive composition has high sensitivity and high resolving power, undergoes neither a decrease in resist pattern line width nor the formation of a T-top resist pattern surface with the lapse of time from exposure to heat treatment, and exhibits less profile deterioration such as residual standing wave and collapse.

    摘要翻译： 一种正型光敏组合物，其包含：由式（I）或（I'）表示的化合物和由式（II）表示的化合物作为在光化射线或辐射照射时产生磺酸的化合物：这些式中的取代基为 在规范中定义。 正型感光性组合物具有高灵敏度和高分辨能力，经历曝光与热处理后的时间不会影响抗蚀剂图案线宽度的降低和T型抗蚀剂图形表面的形成，并且表现出较小的轮廓劣化，例如 残余驻波和崩溃。