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公开(公告)号：US06852467B2
公开(公告)日：2005-02-08
申请号：US09961281
申请日：2001-09-25
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0046 , G03F7/0392 , G03F7/0395 , Y10S430/108
摘要： A positive resist composition comprising: (A) a fluorine group-containing resin having: a structure wherein at least one of the main chain and the side chain of the polymer skeleton has at least one fluorine atom; and having a group capable of decomposing under the action of an acid to increase the solubility in an alkali developer; (B) a compound capable of generating an acid upon irradiation with one of actinic ray and radiation, and (C) a surfactant containing at least one of a silicon atom and a fluorine atom.
摘要翻译： 一种正型抗蚀剂组合物，其包含：（A）含氟基树脂，其具有以下结构：其中所述聚合物骨架的主链和侧链中的至少一个具有至少一个氟原子; 并且具有能够在酸的作用下能够分解以增加在碱性显影剂中的溶解度的基团;（B）在用光化学射线和辐射之一照射时能够产生酸的化合物，和（C）含有 硅原子和氟原子中的至少一个。
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公开(公告)号：US07326513B2
公开(公告)日：2008-02-05
申请号：US10791559
申请日：2004-03-03
CPC分类号： G03F7/0392 , G03F7/0045
摘要： A positive working resist composition comprising (A1) a resin containing a repeating unit represented by formula (1) defined in the specification and a repeating unit represented by formula (2) defined in the specification and having a property of being insoluble or sparingly soluble in an alkali developing solution and becoming soluble in an alkali developing solution by the action of an acid, and (B) a compound capable of generating sulfonic acid upon irradiation with active rays or radiations in an amount of from 5 to 20% by weight based on the total solid content of the positive working resist composition.
摘要翻译： 一种正性抗蚀剂组合物，其包含（A1）含有本说明书中定义的式（1）表示的重复单元的树脂和由说明书中定义的式（2）表示的重复单元，并且具有不溶或微溶于 碱显影液，通过酸的作用变得可溶于碱性显影液，（B）以活性射线或辐射照射时能够产生磺酸的化合物的量为5〜20重量％，基于 正性抗蚀剂组合物的总固体含量。
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公开(公告)号：US06589705B1
公开(公告)日：2003-07-08
申请号：US09698190
申请日：2000-10-30
IPC分类号： G03C172
CPC分类号： G03F7/0758 , G03F7/0045 , G03F7/0048
摘要： A positive-working photoresist composition comprises (A) a resin comprising the specific repeating structural units which resin increases in its solubility in an alkaline developer when acted upon by an acid, (B′) an onium salt compound which generates an acid when irradiated with active ray or radiation and (C) at least one of fluorine-based and/or silicon-based surface active agent and nonionic surface active agent or a positive-working photoresist composition comprises (A) a resin comprising the specific repeating structural units which resin increases in its solubility in an alkaline developer when acted upon by an acid, (B) a compound which generates an acid when irradiated with active ray or radiation, and (D) a mixed solvent containing at least one propylene glycol monoalkyl ether carboxylate and at least one of solvents selected from the group consisting of propylene glycol monoalkyl ether, alkyl lactate and alkoxyalkyl propionate and solvents selected from the group consisting of &ggr;-butyrolactone, ethylene carbonate and propylene carbonate.
摘要翻译： 正性光致抗蚀剂组合物包含（A）包含特定重复结构单元的树脂，当被酸作用时树脂在碱性显影剂中的溶解度增加，（B'）当照射时产生酸的鎓盐化合物 活性射线或辐射，和（C）氟基和/或硅基表面活性剂和非离子表面活性剂或正性光致抗蚀剂组合物中的至少一种包含（A）包含特定重复结构单元的树脂，该树脂 （B）当用活性射线或辐射照射时产生酸的化合物，和（D）含有至少一种丙二醇单烷基醚羧酸酯的混合溶剂，和 选自丙二醇单烷基醚，乳酸烷基酯和丙酸烷氧基烷基酯中的至少一种溶剂和选自以下的溶剂： 的γ-丁内酯，碳酸亚乙酯和碳酸亚丙酯。
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公开(公告)号：US20060147837A1
公开(公告)日：2006-07-06
申请号：US11359424
申请日：2006-02-23
IPC分类号： G03C1/76
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/0392
摘要： The resist composition of the present invention, ensuring excellent pattern profile and excellent isolation performance for use in the pattern formation by the irradiation of actinic rays or radiation, particularly, electron beam, X ray or EUV light, which comprising (A) a compound having a specific partial structure and a counter ion, the compound generating an acid upon irradiation of actinic rays or radiation.
摘要翻译： 本发明的抗蚀剂组合物，通过照射光化射线或辐射，特别是电子束，X射线或EUV光，确保了用于形成图案的优异的图案形状和优异的隔离性能，其包含（A）具有 特定的部分结构和抗衡离子，该化合物在光化射线或辐射照射时产生酸。
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公开(公告)号：US07105273B2
公开(公告)日：2006-09-12
申请号：US10634954
申请日：2003-08-06
IPC分类号： G03F7/04
CPC分类号： G03F7/0045 , G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A positive resist composition of the present invention achieving significant performance improvements in high energy-beam lithography, which comprises a phenolic polymer having a property of being insoluble or hardly soluble in an aqueous alkali solution and becoming soluble in an aqueous alkali solution by the action of an acid, in which the phenolic polymer includes a repeating unit containing at least one selected from the group consisting of an acetal-protected phenolic hydroxyl group, a ketal-protected phenolic hydroxyl group, a tertiary ester-protected carboxyl group and a tetrahydropyranyl-protected carboxyl group; and a compound having a phenacylsulfonium structure and capable of generating an acid upon irradiation with one of actinic rays and radiation.
摘要翻译： 本发明的正型抗蚀剂组合物在高能束光刻中获得显着性能改进，其包括具有不溶性或几乎不溶于碱性水溶液的性质的酚醛聚合物，并且通过作用于碱性溶液 一种酸，其中酚类聚合物包括含有选自缩醛保护的酚羟基，缩酮保护的酚羟基，叔酯保护的羧基和四氢吡喃基保护的羧基中的至少一种的重复单元 羧基; 和具有苯甲酰甲基锍结构并能够在用光化射线和辐射之一照射时产生酸的化合物。
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公开(公告)号：US06387590B1
公开(公告)日：2002-05-14
申请号：US09671177
申请日：2000-09-28
IPC分类号： G03F7004
CPC分类号： G03F7/0757 , G03F7/0392
摘要： Disclosed is a positive photoresist composition comprising a polysiloxane containing as a copolymerization component at least a structural unit represented by the following formula (I): wherein L represents a single bond or an arylene group, A′ represents an aromacyclic or alicyclic structure which may have a substituent, and n represents an integer of 1 to 6.
摘要翻译： 公开了一种正型光致抗蚀剂组合物，其包含至少由下式（I）表示的结构单元作为共聚成分的聚硅氧烷：其中L表示单键或亚芳基，A'表示可具有的单环或脂环结构 取代基，n表示1〜6的整数。
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公开(公告)号：US06346363B2
公开(公告)日：2002-02-12
申请号：US09729178
申请日：2000-12-05
IPC分类号： G03F7004
CPC分类号： G03F7/0757 , G03F7/0045
摘要： A positive type photoresist composition comprising an alkali-soluble or acid-decomposable polysiloxane containing repeating structural units represented by formula (I): wherein L represents at least one divalent connecting group selected from the group consisting of —A—NHCO—, —A—NHCOO— and —A—NHCONH—, wherein A represents a single bond, an alkylene group or an arylene group; X represents a single bond or a divalent connecting group; and Z represents either a group represented by or a group represented by wherein Y represents a hydrogen atom, an alkyl group, an aryl group or an aralkyl group, an atomic group represented by Y may be straight-chain, branched or cyclic, R represents a hydrogen atom or an acid-decomposable group, l represents an integer of from 1 to 3, and m also represents an integer of from 1 to 3.
摘要翻译： 一种正型光致抗蚀剂组合物，其包含含有由式（I）表示的重复结构单元的碱溶性或酸可分解聚硅氧烷：其中L表示至少一个选自-A-NHCO-，-A- NHCOO-和-A-NHCONH-，其中A表示单键，亚烷基或亚芳基; X表示单键或二价连接基团; Z表示由Y代表氢原子，烷基，芳基或芳烷基表示的基团，由Y表示的原子团可以是直链，支链或环状的，R表示氢原子 原子或酸可分解基团，l表示1〜3的整数，m也表示1〜3的整数。
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公开(公告)号：US07217493B2
公开(公告)日：2007-05-15
申请号：US10840624
申请日：2004-05-07
CPC分类号： G03F7/0757 , G03F7/0392 , Y10S430/106 , Y10S430/115
摘要： A positive resist composition comprising (A) polysiloxane or polysilsesquioxane that has a property of increasing solubility in an alkali developing solution by the action of an acid and contains a group capable of being decomposed with an acid, (B) a compound that generates a sulfonic acid upon irradiation of an actinic ray or radiation and (C) an organic basic compound, wherein an amount of the compound that generates a sulfonic acid upon irradiation of an actinic ray or radiation is from 6 to 20% by weight based on the total solid content of the positive resist composition.
摘要翻译： 一种正型抗蚀剂组合物，其包含（A）聚硅氧烷或聚倍半硅氧烷，其具有通过酸的作用增加在碱性显影液中的溶解度的性质，并且含有能够被酸分解的基团，（B）产生磺酸的化合物 通过光化射线或辐射照射时的酸和（C）有机碱性化合物，其中在光化学射线或辐射照射时产生磺酸的化合物的量为基于总固体的6至20重量％ 正性抗蚀剂组合物的含量。
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公开(公告)号：US06777161B2
公开(公告)日：2004-08-17
申请号：US10118896
申请日：2002-04-10
IPC分类号： G03C174
CPC分类号： G03F7/095 , G03F7/0382 , G03F7/0758 , Y10S430/106 , Y10S430/11 , Y10S430/115 , Y10S430/122 , Y10S430/126 , Y10S430/128
摘要： To provide a lower layer resist composition for a silicon-containing two-layer resist, which is excellent in the dry etching resistance and film thickness uniformity. A lower layer resist composition for a silicon-containing two-layer resist, comprising (a) a phenol-based polymer, (b) a compound capable of generating a sulfonic acid at a temperature of 100° C. or more, (c) a phenol-based acid crosslinking agent having two or more benzene rings and capable of crosslinking with the polymer under the action of an acid, and (d) a solvent.
摘要翻译： 1.一种用于含硅双层抗蚀剂的下层抗蚀剂组合物，其包含（a）一种含硅双层抗蚀剂的下层抗蚀剂组合物，其包含（a） 酚类聚合物，（b）能够在100℃以上的温度下产生磺酸的化合物，（c）具有两个以上苯环并能够与聚合物交联的苯酚系酸交联剂 在酸的作用下，和（d）溶剂。
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公开(公告)号：US06555289B2
公开(公告)日：2003-04-29
申请号：US09826850
申请日：2001-04-06
IPC分类号： G03C173
CPC分类号： G03F7/0045 , G03F7/0397 , G03F7/0758 , Y10S430/106 , Y10S430/107 , Y10S430/108 , Y10S430/111 , Y10S430/115
摘要： Provided is a positive photoresist composition for use in the production of a semiconductor device, which ensures high resolution, reduced edge roughness of a line pattern and a small number of development defects. The positive photoresist composition comprises a resin having a specific silicon-containing group on the side chain, the solubility of which resin in an alkali developer increases under the action of an acid.
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