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    SOLAR CELL AND METHOD FOR PRODUCING A SOLAR CELL FROM A SILICON SUBSTRATE
    4.
    发明申请
    SOLAR CELL AND METHOD FOR PRODUCING A SOLAR CELL FROM A SILICON SUBSTRATE 审中-公开
    太阳能电池和从硅衬底生产太阳能电池的方法

    公开(公告)号：US20110272020A1

    公开(公告)日：2011-11-10

    申请号：US13144531

    申请日：2009-12-03

    申请人： Daniel Biro ,  Oliver Schultz-Wittmann ,  Anke Lemke ,  Jochen Rentsch ,  Florian Clement ,  Marc Hofmann ,  Andreas Wolf ,  Luca Gautero ,  Sebastian Mack ,  Ralf Preu

    发明人： Daniel Biro ,  Oliver Schultz-Wittmann ,  Anke Lemke ,  Jochen Rentsch ,  Florian Clement ,  Marc Hofmann ,  Andreas Wolf ,  Luca Gautero ,  Sebastian Mack ,  Ralf Preu

    IPC分类号： H01L31/0232 ,  H01L31/18

    CPC分类号： H01L31/1868 ,  H01L31/02245 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method for producing a solar cell from a silicon wafer, including the following process steps: A) texturizing one side of the silicon substrate (1) for improving the absorption or removing saw damage on one side of the silicon substrate (1); B) generating an emitter area (2) on one side of the silicon substrate (1) by diffusing in a doping material for forming a pn transition; C) removing a glass layer which comprises the doping material; D) applying a masking layer (3) which is a dielectric layer; E) removing one part of the material of the silicon substrate (1); F) applying metal structures (5, 6) for electrically contacting the solar cell. It is significant that thermal oxidation is performed between the process steps E and F for forming an oxide layer (4) and that the masking layer (3) and the oxide layer (4) remain on the silicon substrate (1) in the subsequent process steps.

    摘要翻译： 一种从硅晶片制造太阳能电池的方法，包括以下工艺步骤：A）使硅衬底（1）的一侧变形，以改善在硅衬底（1）的一侧的吸收或去除锯损坏; B）通过在用于形成pn转变的掺杂材料中扩散而在硅衬底（1）的一侧上产生发射极区域（2） C）去除包含掺杂材料的玻璃层; D）施加作为电介质层的掩模层（3）; E）去除硅衬底（1）的材料的一部分; F）施加用于电接触太阳能电池的金属结构（5,6）。 重要的是，在用于形成氧化物层（4）的工艺步骤E和F之间进行热氧化，并且在后续工艺中，掩模层（3）和氧化物层（4）保留在硅衬底（1）上 脚步。

    Method for local contacting and local doping of a semiconductor layer
    6.
    发明授权
    Method for local contacting and local doping of a semiconductor layer 有权
    局部接触和局部掺杂半导体层的方法

    公开(公告)号：US08828790B2

    公开(公告)日：2014-09-09

    申请号：US13061158

    申请日：2009-08-20

    申请人： Ralf Preu ,  Andreas Grohe ,  Daniel Biro ,  Jochen Rentsch ,  Marc Hofmann ,  Jan-Frederik Nekarda ,  Andreas Wolf

    发明人： Ralf Preu ,  Andreas Grohe ,  Daniel Biro ,  Jochen Rentsch ,  Marc Hofmann ,  Jan-Frederik Nekarda ,  Andreas Wolf

    IPC分类号： H01L21/00 ,  H01L31/18 ,  H01L21/225 ,  H01L31/0224

    CPC分类号： H01L31/022425 ,  H01L21/2254 ,  H01L31/18 ,  Y02E10/50 ,  Y02E10/52

    摘要： A method for local contacting and local doping of a semiconductor layer including the following process steps: A) Generation of a layer structure on the semiconductor layer through i) application of at least one intermediate layer on one side of the semiconductor layer, and ii) application of at least one metal layer onto the intermediate layer last applied in step i), wherein the metal layer at least partly covers the last applied intermediate layer, B) Local heating of the layer structure in such a manner that in a local region a short-time melt-mixture of at least partial regions of at least the layers: metal layer, intermediate layer and semiconductor layer, forms. After solidification of the melt-mixture, a contacting is created between metal layer and semiconductor layer. It is essential that in step A) i) at least one intermediate layer designed as dopant layer is applied, which contains a dopant wherein the dopant has a greater solubility in the semiconductor layer than the metal of the metal layer.

    摘要翻译： 一种半导体层的局部接触和局部掺杂的方法，包括以下工艺步骤：A）通过在半导体层的一侧上施加至少一个中间层，在半导体层上产生层结构，以及ii） 在步骤i）中最后施加至少一个金属层到中间层上，其中金属层至少部分地覆盖最后施加的中间层，B）层结构的局部加热，使得在局部区域a 形成至少两层以上金属层，中间层和半导体层的至少部分区域的短时熔融混合物。 在熔融混合物固化之后，在金属层和半导体层之间形成接触。 重要的是，在步骤A）中，i）施加设计为掺杂剂层的至少一个中间层，其包含掺杂剂，其中掺杂剂在半导体层中比金属层的金属具有更大的溶解度。

    METHOD FOR LOCAL CONTACTING AND LOCAL DOPING OF A SEMICONDUCTOR LAYER
    7.
    发明申请
    METHOD FOR LOCAL CONTACTING AND LOCAL DOPING OF A SEMICONDUCTOR LAYER 有权
    用于局部接触和半导体层局部掺杂的方法

    公开(公告)号：US20110233711A1

    公开(公告)日：2011-09-29

    申请号：US13061158

    申请日：2009-08-20

    申请人： Ralf Preu ,  Andreas Grohe ,  Daniel Biro ,  Jochen Rentsch ,  Marc Hofmann ,  Jan-Frederik Nekarda ,  Andreas Wolf

    发明人： Ralf Preu ,  Andreas Grohe ,  Daniel Biro ,  Jochen Rentsch ,  Marc Hofmann ,  Jan-Frederik Nekarda ,  Andreas Wolf

    IPC分类号： H01L29/36 ,  H01L21/24

    CPC分类号： H01L31/022425 ,  H01L21/2254 ,  H01L31/18 ,  Y02E10/50 ,  Y02E10/52

    摘要： A method for local contacting and local doping of a semiconductor layer including the following process steps: A) Generation of a layer structure on the semiconductor layer through i) application of at least one intermediate layer on one side of the semiconductor layer, and ii) application of at least one metal layer onto the intermediate layer last applied in step i), wherein the metal layer at least partly covers the last applied intermediate layer, B) Local heating of the layer structure in such a manner that in a local region a short-time melt-mixture of at least partial regions of at least the layers: metal layer, intermediate layer and semiconductor layer, forms. After solidification of the melt-mixture, a contacting is created between metal layer and semiconductor layer. It is essential that in step A) i) at least one intermediate layer designed as dopant layer is applied, which contains a dopant wherein the dopant has a greater solubility in the semiconductor layer than the metal of the metal layer.

    摘要翻译： 一种半导体层的局部接触和局部掺杂的方法，包括以下工艺步骤：A）通过在半导体层的一侧上施加至少一个中间层，在半导体层上产生层结构，以及ii） 在步骤i）中最后施加至少一个金属层到中间层上，其中金属层至少部分地覆盖最后施加的中间层，B）层结构的局部加热，使得在局部区域a 形成至少两层以上金属层，中间层和半导体层的至少部分区域的短时熔融混合物。 在熔融混合物固化之后，在金属层和半导体层之间形成接触。 重要的是，在步骤A）中，i）施加设计为掺杂剂层的至少一个中间层，其包含掺杂剂，其中掺杂剂在半导体层中比金属层的金属具有更大的溶解度。

    Method for producing a metal contact structure of a photovoltaic solar cell
    8.
    发明授权
    Method for producing a metal contact structure of a photovoltaic solar cell 有权
    光伏太阳能电池的金属接触结构的制造方法

    公开(公告)号：US08748310B2

    公开(公告)日：2014-06-10

    申请号：US13805023

    申请日：2011-06-16

    申请人： Daniel Biro ,  Benjamin Thaidigsmann ,  Florian Clement ,  Robert Woehl ,  Edgar-Allan Wotke

    发明人： Daniel Biro ,  Benjamin Thaidigsmann ,  Florian Clement ,  Robert Woehl ,  Edgar-Allan Wotke

    IPC分类号： H01L21/44

    CPC分类号： H01L31/18 ,  H01L31/022425 ,  H01L31/05 ,  Y02E10/50

    摘要： A method for producing a metal contact structure of a photovoltaic solar cell, including: applying an electrically non-conductive insulating layer to a semiconductor substrate, applying a metal contact layer to the insulating layer, and generating a plurality of local electrically conductive connections between the semiconductor substrate and the contact layer right through the insulating layer. The metal contact layer is formed using two pastes containing metal particles: the first paste containing metal particles is applied to local regions, and the second paste containing metal particles is applied covering at least the regions covered with the first paste and partial regions located therebetween. By global heating the semiconductor substrate the first paste penetrates the insulating layer and forms an electrically conductive contact directly with the semiconductor substrate, whereas the second paste does not penetrate the insulating layer and is electrically conductively connected to the semiconductor substrate via the first paste.

    摘要翻译： 一种用于制造光伏太阳能电池的金属接触结构的方法，包括：向半导体衬底施加非导电绝缘层，向所述绝缘层施加金属接触层，以及在所述绝缘层之间产生多个局部导电连接 半导体衬底和接触层直接通过绝缘层。 使用含有金属颗粒的两个糊料形成金属接触层：将第一糊料含有金属颗粒施加到局部区域，并且将第二糊料含有金属颗粒涂覆至少覆盖第一糊料覆盖的区域和位于其间的部分区域。 通过对半导体衬底进行全局加热，第一浆料穿透绝缘层并与半导体衬底直接形成导电触点，而第二焊膏不穿透绝缘层，并通过第一焊膏与半导体衬底电连接。

    PHOTOVOLTAIC SOLAR CELL AND A METHOD FOR THE PRODUCTION OF SAME
    9.
    发明申请
    PHOTOVOLTAIC SOLAR CELL AND A METHOD FOR THE PRODUCTION OF SAME 审中-公开
    光伏太阳能电池及其制造方法

    公开(公告)号：US20140026936A1

    公开(公告)日：2014-01-30

    申请号：US13982894

    申请日：2012-01-26

    申请人： Benjamin Thaidigsmann ,  Florian Clement ,  Andreas Wolf ,  Daniel Biro

    发明人： Benjamin Thaidigsmann ,  Florian Clement ,  Andreas Wolf ,  Daniel Biro

    IPC分类号： H01L31/0224

    CPC分类号： H01L31/02245 ,  H01L27/1421 ,  H01L31/0682 ,  Y02E10/547

    摘要： A photovoltaic solar cell for converting incident electromagnetic radiation into electrical energy, including at least one base region of a base-doping type, designed in a silicon substrate; at least one emitter region of an emitter-doping type that is of an opposite doping type to the base-doping type; at least one metallic base-contacting structure connected, in an electrically conductive manner, to the base region, and at least one metallic emitter-contacting structure connected, in an electrically conductive manner, to the emitter region, the base region and emitter region being arranged in such a manner that a pn-junction is formed at least in some regions between said base and emitter regions. It is essential that the base-contacting structure overlaps the emitter region in a base-bypass region and that in said overlapping region, a diode-like semiconductor contact is designed between the base-contacting structure and the emitter region, said semiconductor contact being a metal semiconductor contact or as a metal-insulator-semiconductor contact, and/or that the emitter-contacting structure overlaps the base region in an emitter-bypass region and that in this overlapping region, a diode-like semiconductor contact is designed between the emitter-contacting structure and the base region, said semiconductor contact being a metal semiconductor contact or as a metal-insulator-semiconductor contact. The invention also relates to a method for producing a solar cell.

    摘要翻译： 一种用于将入射的电磁辐射转换为电能的光伏太阳能电池，包括在硅衬底中设计的至少一个基底掺杂类型的基极区域; 与基极掺杂型相反的掺杂类型的发射极掺杂型的至少一个发射极区域; 至少一个金属基底接触结构以导电方式连接到基极区域，以及至少一个金属发射极接触结构，其以导电方式连接到发射极区域，基极区域和发射极区域为 以这样的方式布置，使得至少在所述基极和发射极区域之间的一些区域中形成pn结。 重要的是，碱接触结构与基极旁路区域中的发射极区域重叠，并且在所述重叠区域中，在基极接触结构和发射极区域之间设计二极管状半导体接触，所述半导体接触是 金属半导体接触或/或金属 - 绝缘体 - 半导体接触，和/或发射极接触结构与发射极 - 旁路区域中的基极区域重叠，并且在该重叠区域中，二极管状半导体接触器设计在发射极 - 接触结构和基极区，所述半导体接触是金属半导体接触或金属 - 绝缘体 - 半导体接触。 本发明还涉及太阳能电池的制造方法。

    METHOD AND DEVICE FOR PRODUCING A METALLIC CONTACT STRUCTURE FOR MAKING ELECTRICAL CONTACT WITH A PHOTOVOLTAIC SOLAR CELL
    10.
    发明申请
    METHOD AND DEVICE FOR PRODUCING A METALLIC CONTACT STRUCTURE FOR MAKING ELECTRICAL CONTACT WITH A PHOTOVOLTAIC SOLAR CELL 有权
    用于制造与光伏电池电气接触的金属接触结构的方法和装置

    公开(公告)号：US20130224906A1

    公开(公告)日：2013-08-29

    申请号：US13819849

    申请日：2011-08-29

    申请人： Daniel Biro ,  Jan Specht ,  Daniel Scheffler ,  Maximilian Pospischil ,  Florian Clement

    发明人： Daniel Biro ,  Jan Specht ,  Daniel Scheffler ,  Maximilian Pospischil ,  Florian Clement

    IPC分类号： H01L31/0224

    CPC分类号： H01L31/022425 ,  H01L21/6715 ,  H05K1/092 ,  H05K3/1241 ,  H05K2203/0134 ,  Y02E10/50

    摘要： A method for producing a metallic contact structure for making electrical contact with a photovoltaic solar cell, wherein, in order to create the contact structure, a paste, which contains metal particles, is applied to a surface of a carrier substrate via at least one dispensing opening, wherein the dispensing opening and the carrier substrate are moved in relation to one another during the dispensing of the paste. The paste is circulated in a circulating region, and in each case a part of the paste is branched off out of the circulating region at a plurality of branching points and each branching point is assigned at least one dispensing opening, via which the paste branched off at the branching point is applied to the surface of the carrier substrate, wherein the paste flows through a flow path having a length of less than 1 cm in each case between being branched off out of the circulating region and being dispensed from the dispensing opening assigned to the branching point. A device for producing a metallic contact structure for making electrical contact with a photovoltaic solar cell is also provided.

    摘要翻译： 一种用于制造与光伏太阳能电池电接触的金属接触结构的方法，其中为了形成接触结构，将含有金属颗粒的糊剂通过至少一种分配物施加到载体基材的表面上 开口，其中在分配浆料期间，分配开口和载体基底相对于彼此移动。 浆料在循环区域中循环，并且在每种情况下，一部分糊料在多个分支点处从循环区域中分出，并且每个分支点被分配至少一个分配开口，通过该分配开口分配糊料 在分支点处被施加到载体基材的表面，其中糊料在每种情况下流过长度小于1cm的流动路径，在从循环区域中分出并从分配开口分配 到分支点。 还提供了一种用于制造用于与光伏太阳能电池电接触的金属接触结构的装置。