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    Semiconductor power component and a method of producing same
    3.
    发明授权
    Semiconductor power component and a method of producing same 失效
    半导体功率元件及其制造方法

    公开(公告)号：US06949439B2

    公开(公告)日：2005-09-27

    申请号：US10450222

    申请日：2002-03-26

    申请人： Peter Flohrs ,  Robert Plikat ,  Wolfgang Feiler

    发明人： Peter Flohrs ,  Robert Plikat ,  Wolfgang Feiler

    IPC分类号： H01L21/331 ,  H01L29/739 ,  H01L21/8224

    CPC分类号： H01L29/66333 ,  H01L29/7395

    摘要： A semiconductor power component and a method for producing a semiconductor power component, in particular a vertical NPT-IGBT for ignition applications with a breakdown voltage of less than approx. 1000 V. The semiconductor power component includes a wafer substrate of a first conductive type including a rear-side emitter region of a second conductive type and a front-side drift region of the first conductive type; a rear-side anode contact which is connected to the emitter region and extends partially to the front-side surface; a front-side MOS control structure; and a front-side cathode contact which is connected to a front-side source region and a body region of the front-side MOS control structure. The thickness of the drift region is much larger than the width of the space charge region at a defined breakdown voltage; and the thickness of the rear-side emitter region is greater than 5 μm.

    摘要翻译： 半导体功率部件和半导体功率部件的制造方法，特别是用于点火应用的垂直NPT-IGBT，击穿电压小于约。 半导体功率部件包括第一导电类型的晶片衬底，其包括第二导电类型的后侧发射极区域和第一导电类型的前侧漂移区域; 背面阳极接触件，其连接到发射极区域并部分地延伸到前侧表面; 前端MOS控制结构; 以及连接到前侧MOS控制结构的前侧源极区域和主体区域的前侧阴极接触件。 在限定的击穿电压下，漂移区的厚度远大于空间电荷区的宽度; 后侧发射极区域的厚度大于5μm。

    DMOS transistor protected against polarity reversal
    4.
    发明授权
    DMOS transistor protected against polarity reversal 失效
    DMOS晶体管保护极性反转

    公开(公告)号：US06661056B1

    公开(公告)日：2003-12-09

    申请号：US10168243

    申请日：2002-09-26

    申请人： Robert Plikat ,  Wolfgang Feiler

    发明人： Robert Plikat ,  Wolfgang Feiler

    IPC分类号： H01L2976

    CPC分类号： H01L29/7802 ,  H01L29/0623 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/7803 ,  H01L29/7832

    摘要： The present invention relates to a circuit configuration for protecting against polarity reversal of a DMOS transistor. A charge carrier zone (30) is provided, situated in the drift zone (14) of DMOS transistor (10), made up of individual partial charge carrier zones (32) situated at a distance from one another and connected to one another in a conducting manner, the charge carrier zone (30) having an opposite charge carrier doping from that of the drift zone (14), and being able to be acted upon by a potential that is negative with respect to a potential present at a drain terminal (24) of the DMOS transistor (10), so that a short-circuit current is prevented.

    摘要翻译： 本发明涉及一种用于防止DMOS晶体管的极性反转的电路配置。提供了一个电荷载体区（30），位于DMOS晶体管（10）的漂移区（14）中，由各个部分电荷载体 区域（32）彼此间隔一定距离并且以导电方式彼此连接，所述电荷载体区域（30）具有与所述漂移区（14）的载流子相反的电荷载流子，并且能够被起作用 通过相对于存在于DMOS晶体管（10）的漏极端子（24）处的电位为负的电位，使得防止短路电流。

    Metal insulator power semiconductor component (MIS) and a method for producing the same
    5.
    发明授权
    Metal insulator power semiconductor component (MIS) and a method for producing the same 失效
    金属绝缘子功率半导体元件（MIS）及其制造方法

    公开(公告)号：US07084438B2

    公开(公告)日：2006-08-01

    申请号：US10474614

    申请日：2002-04-03

    申请人： Robert Plikat ,  Wolfgang Feiler

    发明人： Robert Plikat ,  Wolfgang Feiler

    IPC分类号： H01L29/32

    CPC分类号： H01L29/66363 ,  H01L29/0634 ,  H01L29/102 ,  H01L29/7455 ,  H01L29/749

    摘要： A semiconductor power component having an anode contact on the reverse side, an emitter region of a first conductor type on the reverse side, which is connected to the anode contact on the reverse side, a drift zone which is connected to the emitter region that is on the reverse side and extends partially to the front surface, an MOS control structure on the front side, having a control contact positioned in insulated fashion, a cathode contact on a front side which is connected to a source region and a first body region. The drift zone has first and second drift region of a second conductor type and a third drift region of first conductor type. First drift region is a buried region, second drift region connects the front surface to first drift region, and third drift region connects the first and/or second body region to first drift region. The degree of compensation (K(y)) that is ascertainable from the second and third drift region is greater than one and has a maximum in the region of the side of the third drift region facing away from the front surface.

    摘要翻译： 在反面具有阳极接触的半导体功率部件，反面侧的第一导体类型的发射极区域，其与反面的阳极接触点相连，漂移区域与发射极区域连接， 在反面上并且部分地延伸到前表面，在前侧具有控制触点，以绝缘方式设置的MOS控制结构，连接到源极区域和第一主体区域的正面上的阴极接触。 漂移区具有第一导体类型的第一和第二漂移区域和第一导体类型的第三漂移区域。 第一漂移区域是掩埋区域，第二漂移区域将前表面连接到第一漂移区域，第三漂移区域将第一和/或第二体区域连接到第一漂移区域。 从第二和第三漂移区域可以确定的补偿度（K（y））大于1，并且在第三漂移区域的远离前表面的一侧的区域中具有最大值。

    Semiconductor power component and a corresponding manufacturing method
    6.
    发明授权
    Semiconductor power component and a corresponding manufacturing method 有权
    半导体功率元件及相应的制造方法

    公开(公告)号：US06674125B2

    公开(公告)日：2004-01-06

    申请号：US10119515

    申请日：2002-04-10

    申请人： Wolfgang Feiler ,  Robert Plikat

    发明人： Wolfgang Feiler ,  Robert Plikat

    IPC分类号： H01L2976

    CPC分类号： H01L29/66333 ,  H01L29/1095 ,  H01L29/7395

    摘要： A semiconductor power component is described having a rear-side anode contact, a rear-side emitter region of a first conductivity type, which is connected to the rear-side anode contact, a drift region, which is connected to the rear-side emitter region and partially extends to the front-side surface, a front-side MOS control structure, and a front-side cathode contact, which is connected to the source region and the body region. The drift region includes a first drift region of the second conductivity type, a second drift region of the second conductivity type, and a third drift region of the first conductivity type. The first drift region is a buried region. The second drift region connects the front-side surface to the first drift region. The third drift region borders on a body region and connects the front side surface to the first drift region. The degree of compensation to be determined from the second and third drift region is greater than one and has a maximum in the area of the side of the third drift region that is facing away from the front-side surface. The present invention also creates a corresponding manufacturing method.

    摘要翻译： 描述了一种半导体功率元件，其具有后侧阳极触点，连接到后侧阳极触点的第一导电类型的后侧发射极区域，漂移区域，其连接到后侧发射极 并且部分地延伸到前侧表面，前侧MOS控制结构和前侧阴极接触件，其连接到源区域和主体区域。 漂移区域包括第二导电类型的第一漂移区域，第二导电类型的第二漂移区域和第一导电类型的第三漂移区域。 第一漂移区是埋藏区。 第二漂移区域将前侧表面连接到第一漂移区域。 第三漂移区域与身体区域相邻并且将前侧表面连接到第一漂移区域。 从第二和第三漂移区域确定的补偿程度大于1，并且在第三漂移区域的背离前侧表面的一侧的面积中具有最大值。 本发明还产生相应的制造方法。

    Bi-directional semiconductor component
    7.
    发明授权
    Bi-directional semiconductor component 失效
    双向半导体元件

    公开(公告)号：US06777748B1

    公开(公告)日：2004-08-17

    申请号：US10031526

    申请日：2002-05-09

    申请人： Robert Plikat ,  Wolfgang Feiler

    发明人： Robert Plikat ,  Wolfgang Feiler

    IPC分类号： H01L2976

    CPC分类号： F02P3/0435 ,  H01L29/7393

    摘要： A bidirectional semiconductor component having two symmetrical MOS transistor structures integrated laterally in a substrate and connected antiserially, their drain terminals being connected to one another. A zone having the same type of conductivity as the drain region yet a higher doping than that of the drain region is situated upstream from a pn junction of one of the MOS transistors in a junction area with the drain region.

    摘要翻译： 一种具有两个对称的MOS晶体管结构的双向半导体元件，其侧向集成在基板中并且被连接成反向连接，它们的漏极端子彼此连接。 与漏极区相比具有相同类型的导电性的区域具有比漏极区域更高的掺杂的区域位于与漏极区域的结区域中的一个MOS晶体管的pn结的上游。

    Control Circuit for Controlling an Electronic Circuit and Method for This
    8.
    发明申请
    Control Circuit for Controlling an Electronic Circuit and Method for This 失效
    用于控制电子电路的控制电路及其方法

    公开(公告)号：US20080001586A1

    公开(公告)日：2008-01-03

    申请号：US10593516

    申请日：2005-02-07

    申请人： Jochen Kuehner ,  Robert Plikat ,  Stefan Mueller ,  Stephan Rees ,  Armin Ruf

    发明人： Jochen Kuehner ,  Robert Plikat ,  Stefan Mueller ,  Stephan Rees ,  Armin Ruf

    IPC分类号： G05F1/10

    CPC分类号： H03K4/02 ,  H03K17/04123 ,  H03K17/0822 ,  H03K17/166

    摘要： A control circuit for controlling an electronic circuit, which has a current path through a semiconductor switch and a line; when the semiconductor switch is switched, the inductance of the line and/or of a component in the current path producing an excess voltage between a first and a second current-carrying terminal of the semiconductor switch; the control circuit having a controllable current source for charging or discharging a charge-controlled gate of the semiconductor switch with the aid of a control current, as well as a control unit; the control unit controlling the current source in such a manner, that in the case of a switching operation, the terminal voltage across the current-carrying terminals of the semiconductor switch does not exceed a predefined setpoint terminal voltage.

    摘要翻译： 一种用于控制具有通过半导体开关和线路的电流通路的电子电路的控制电路; 当切换半导体开关时，电流路径中的线路和/或部件的电感在半导体开关的第一和第二载流端子之间产生过电压; 控制电路具有可控电流源，用于借助控制电流对半导体开关的电荷控制栅极进行充电或放电，以及控制单元; 控制单元以这种方式控制电流源，即在切换操作的情况下，半导体开关的通电端子两端的端子电压不超过预定的设定点终端电压。

    Semiconductor component and method of producing it
    9.
    发明授权
    Semiconductor component and method of producing it 失效
    半导体元件及其制造方法

    公开(公告)号：US06734520B2

    公开(公告)日：2004-05-11

    申请号：US09861427

    申请日：2001-05-18

    申请人： Holger Kapels ,  Dieter Silber ,  Robert Plikat

    发明人： Holger Kapels ,  Dieter Silber ,  Robert Plikat

    IPC分类号： H01L27095

    CPC分类号： H01L29/7811 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/408 ,  H01L29/7802

    摘要： A semiconductor component includes a first layer and at least one adjacent semiconductor layer or metallic layer, which forms a rectifying junction with the first layer. Further semiconductor layers and metallic layers are provided for contacting the component. Insulating or semi-insulating structures are introduced into the first layer in a plane parallel to the rectifying junction. These structures are shaped like dishes with their edges bent up towards the rectifying junction. A method of producing such a semiconductor component is also provided.

    摘要翻译： 半导体部件包括第一层和与第一层形成整流结的至少一个相邻的半导体层或金属层。 提供了进一步的半导体层和金属层用于使部件接触。 绝缘或半绝缘结构在平行于整流结的平面中引入第一层。 这些结构的形状像碟子一样弯曲，朝向整流结。 还提供了一种制造这种半导体部件的方法。

    Inverter for an electric machine
    10.
    发明授权
    Inverter for an electric machine 有权
    变频器用于电机

    公开(公告)号：US06888336B2

    公开(公告)日：2005-05-03

    申请号：US10483575

    申请日：2003-02-06

    申请人： Jochen Kuehner ,  Robert Plikat ,  Klaus Rechberger ,  Jochen Ruopp

    发明人： Jochen Kuehner ,  Robert Plikat ,  Klaus Rechberger ,  Jochen Ruopp

    IPC分类号： H02H7/08 ,  H02H9/04 ,  H02P5/34

    CPC分类号： H02H7/0844 ,  H02H9/047

    摘要： An inverter for an electric machine is specified that includes a plurality of switching elements, in particular six, which are positioned in a bridge circuit and produce a connection between the electric machine and a battery. The switching elements built into the low-side branch of the inverter are ones that are conductive without a control voltage present, i.e., normally-on switching elements. That ensures that if the supply voltage is absent and the electric machine is rotating the windings of the electric machine are short circuited and no overvoltages are able to occur. In normal operation the inverter is operated like a conventional inverter, by clocked actuation, but with reversed actuation of the control electrodes, i.e., with control voltage for non-conductive time phases and without control voltage in conductive phases.

    摘要翻译： 规定了一种用于电机的逆变器，其包括位于桥式电路中的多个开关元件，特别是六个开关元件，并产生电机和电池之间的连接。 内置在逆变器的低侧分支中的开关元件是在没有控制电压的情况下是导通的，即正常开关元件。 这确保了如果不存在电源电压并且电机正在旋转，则电机的绕组短路并且不会发生过电压。 在正常操作中，逆变器的工作方式与传统的逆变器一样，通过时钟驱动，但反向驱动控制电极，即具有用于非导通时间相位的控制电压，而在导电阶段没有控制电压。