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    Method of fabricating semiconductor device
    1.
    发明授权
    Method of fabricating semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US07674696B2

    公开(公告)日：2010-03-09

    申请号：US11962416

    申请日：2007-12-21

    申请人： Dong Ho Lee ,  Kwon Hong ,  Jae Mun Kim ,  Hee Soo Kim ,  Jae Hyoung Koo

    发明人： Dong Ho Lee ,  Kwon Hong ,  Jae Mun Kim ,  Hee Soo Kim ,  Jae Hyoung Koo

    IPC分类号： H01L21/425

    CPC分类号： H01L21/28061 ,  H01L21/265 ,  H01L21/324

    摘要： In one embodiment, a gate insulating layer, a conductive layer, and a metal layer are formed over a semiconductor substrate. An ion implantation region is formed in an interface of the conductive layer and the metal layer by performing an ion implantation process. A flash annealing process is performed on the ion-implanted semiconductor substrate. The metal layer, the conductive layer, and the gate insulating layer are patterned.

    摘要翻译： 在一个实施例中，在半导体衬底上形成栅绝缘层，导电层和金属层。 通过进行离子注入工艺，在导电层和金属层的界面上形成离子注入区。 在离子注入的半导体衬底上进行闪光退火处理。 图案化金属层，导电层和栅极绝缘层。

    METHOD OF FABRICATING SEMICONDUCTOR DEVICE
    2.
    发明申请
    METHOD OF FABRICATING SEMICONDUCTOR DEVICE 失效
    制造半导体器件的方法

    公开(公告)号：US20080248637A1

    公开(公告)日：2008-10-09

    申请号：US11962416

    申请日：2007-12-21

    申请人： Dong Ho Lee ,  Kwon Hong ,  Jae Mun Kim ,  Hee Soo Kim ,  Jae Hyoung Koo

    发明人： Dong Ho Lee ,  Kwon Hong ,  Jae Mun Kim ,  Hee Soo Kim ,  Jae Hyoung Koo

    IPC分类号： H01L21/425

    CPC分类号： H01L21/28061 ,  H01L21/265 ,  H01L21/324

    摘要： In one embodiment, a gate insulating layer, a conductive layer, and a metal layer are formed over a semiconductor substrate. An ion implantation region is formed in an interface of the conductive layer and the metal layer by performing an ion implantation process. A flash annealing process is performed on the ion-implanted semiconductor substrate. The metal layer, the conductive layer, and the gate insulating layer are patterned.

    摘要翻译： 在一个实施例中，在半导体衬底上形成栅绝缘层，导电层和金属层。 通过进行离子注入工艺，在导电层和金属层的界面上形成离子注入区。 在离子注入的半导体衬底上进行闪光退火处理。 图案化金属层，导电层和栅极绝缘层。

    Case of a mobile terminal comprising a main body and a cover
    6.
    发明授权
    Case of a mobile terminal comprising a main body and a cover 有权
    包括主体和盖的移动终端的情况

    公开(公告)号：US08244320B2

    公开(公告)日：2012-08-14

    申请号：US12482936

    申请日：2009-06-11

    申请人： Dong Ho Lee ,  Won Seok Choi

    发明人： Dong Ho Lee ,  Won Seok Choi

    IPC分类号： H04M1/00 ,  B29B7/00 ,  B29C45/00

    CPC分类号： H04M1/0283

    摘要： A mobile terminal fabricated through co-injection molding is provided. The mobile terminal includes a first case and a second case coupled to the first case. The first case includes a main body having a keypad and a cover formed on the main body. The cover is co-injection molded with the main body whereby no parting lines are formed between the cover and the main body. A method of forming a case of a mobile terminal is also provided. The method includes injection molding a main body using a first resin material, the main body having a keypad, and injection molding a cover onto the main body using a second resin material different from the first resin material, whereby no parting lines are formed between the cover and the main body.

    摘要翻译： 提供了通过共注射成型制造的移动终端。 移动终端包括第一壳体和联接到第一壳体的第二壳体。 第一种情况包括具有小键盘的主体和形成在主体上的盖。 盖与主体共注射成型，由此在盖和主体之间不形成分型线。 还提供了形成移动终端的情况的方法。 该方法包括使用第一树脂材料注射成型主体，主体具有键盘，并且使用与第一树脂材料不同的第二树脂材料将盖注射到主体上，由此在第一树脂材料之间不形成分型线 盖和主体。

    High dielectric constant ceramic-polymer composites, embedded capacitors using the same, and fabrication method thereof
    7.
    发明授权
    High dielectric constant ceramic-polymer composites, embedded capacitors using the same, and fabrication method thereof 有权
    高介电常数陶瓷聚合物复合材料，使用其的嵌入式电容器及其制造方法

    公开(公告)号：US08192508B2

    公开(公告)日：2012-06-05

    申请号：US12629142

    申请日：2009-12-02

    申请人： Hae June Je ,  Byung Kook Kim ,  Min Park ,  Dong Ho Lee

    发明人： Hae June Je ,  Byung Kook Kim ,  Min Park ,  Dong Ho Lee

    IPC分类号： C22B1/16

    CPC分类号： H01G4/20 ,  Y10T29/435

    摘要： Disclosed are ceramic-polymer composite consisting of aggregates of dielectric ceramic particles and polymer resin, and a fabrication method thereof, the method including aggregating dielectric ceramic particles to create aggregates, melting polymer resin in a solvent to prepare a polymer solution, dispersing the aggregates in the polymer solution to prepare a mixed solution, and hardening the mixed solution to obtain ceramic-polymer composites.

    摘要翻译： 公开了由介电陶瓷颗粒和聚合物树脂的聚集体组成的陶瓷 - 聚合物复合材料及其制造方法，其包括聚集电介质陶瓷颗粒以产生聚集体，在溶剂中熔融聚合物树脂以制备聚合物溶液，将聚集体分散在 聚合物溶液以制备混合溶液，并硬化混合溶液以获得陶瓷 - 聚合物复合材料。

    Methods of fabricating light guide members and backlight units
    8.
    发明授权
    Methods of fabricating light guide members and backlight units 有权
    制造导光构件和背光单元的方法

    公开(公告)号：US08111969B2

    公开(公告)日：2012-02-07

    申请号：US12662252

    申请日：2010-04-07

    申请人： Dong Ho Lee ,  Won Ki Cho ,  Min Ho Lee

    发明人： Dong Ho Lee ,  Won Ki Cho ,  Min Ho Lee

    IPC分类号： G02B6/10

    CPC分类号： G02B6/0038 ,  G02B6/0061 ,  G02B6/0065 ,  Y10S385/901

    摘要： A light guide member capable of guiding light received from at least a first light source and second light source, wherein the first light source is spaced a distance D3 from the second light source. The light guide member may include a first side including a plurality of first grooves extending along a first direction and a plurality of second grooves extending along the first direction, wherein the first grooves may have a first pitch and the second grooves have a second pitch, the first pitch being different from the second pitch.

    摘要翻译： 一种导光构件，其能够引导从至少第一光源和第二光源接收的光，其中所述第一光源与所述第二光源间隔开距离D3。 导光构件可以包括第一侧，其包括沿着第一方向延伸的多个第一凹槽和沿着第一方向延伸的多个第二凹槽，其中第一凹槽可以具有第一间距，并且第二凹槽具有第二间距， 第一节距与第二节距不同。

    Method of forming junction of semiconductor device
    9.
    发明授权
    Method of forming junction of semiconductor device 失效
    形成半导体器件结的方法

    公开(公告)号：US07981752B2

    公开(公告)日：2011-07-19

    申请号：US12258269

    申请日：2008-10-24

    申请人： Dong Ho Lee

    发明人： Dong Ho Lee

    IPC分类号： H01L21/336

    CPC分类号： H01L21/26513 ,  H01L21/2658 ,  H01L21/324 ,  H01L21/76832 ,  H01L27/10873

    摘要： The present invention relates to a method of forming junctions of a semiconductor device. According to the method of forming junctions of a semiconductor device in accordance with an aspect of the present invention, there is provided a semiconductor substrate in which a transistor including the junctions are formed. A first thermal treatment process for forming a passivation layer over the semiconductor substrate including the junctions is performed. Here, the passivation layer functions to prevent impurities within the junctions from being drained. A pre-metal dielectric layer is formed over the semiconductor substrate including the passivation layer.

    摘要翻译： 本发明涉及一种形成半导体器件的结的方法。 根据根据本发明的一个方面的形成半导体器件的结的方法，提供了一种半导体衬底，其中形成包括结的晶体管。 执行用于在包括结的半导体衬底上形成钝化层的第一热处理工艺。 这里，钝化层用于防止接合处的杂质被排出。 在包括钝化层的半导体衬底之上形成预金属介电层。

    Power amplifiers with discrete power control
    10.
    发明授权
    Power amplifiers with discrete power control 有权
    具有分立功率控制功能的功率放大器

    公开(公告)号：US07952433B2

    公开(公告)日：2011-05-31

    申请号：US12620476

    申请日：2009-11-17

    申请人： Kyu Hwan An ,  Dong Ho Lee ,  Chang-Ho Lee ,  Joy Laskar

    发明人： Kyu Hwan An ,  Dong Ho Lee ,  Chang-Ho Lee ,  Joy Laskar

    IPC分类号： H03F3/68

    CPC分类号： H03F1/0277 ,  H03F1/0266 ,  H03F1/223 ,  H03F3/211 ,  H03F3/72 ,  H03F2200/105 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/541 ,  H03F2200/543 ,  H03F2203/21103 ,  H03F2203/21118 ,  H03F2203/21139 ,  H03F2203/7206 ,  H03F2203/7236

    摘要： Systems and methods are provided for power amplifiers with discrete power control. The systems and methods may include a plurality of unit power amplifiers; a plurality of primary windings, wherein each primary winding is connected to at least one respective output port of a respective one the plurality of unit power amplifiers; a secondary winding inductively coupled to the plurality of primary windings, where the secondary winding provides an overall output; a bias controller, where the bias controller provides a respective bias voltage based at least in part on a level of output power to one or more of the plurality of unit power amplifiers; and a switch controller, where the switch controller operates to activate or deactivate at least one of the plurality of unit power amplifiers via a respective control signal.

    摘要翻译： 为具有分立功率控制的功率放大器提供系统和方法。 系统和方法可以包括多个单位功率放大器; 多个初级绕组，其中每个初级绕组连接到所述多个单位功率放大器中的相应一个的至少一个相应的输出端口; 电感耦合到所述多个初级绕组的次级绕组，其中所述次级绕组提供总输出; 偏置控制器，其中所述偏置控制器至少部分地基于对所述多个单位功率放大器中的一个或多个的输出功率的电平提供相应的偏置电压; 以及开关控制器，其中所述开关控制器操作以经由相应的控制信号来激活或去激活所述多个单元功率放大器中的至少一个。