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42 条记录 (耗时 0.047 秒)

    Image processing method for mobile terminal
    3.
    发明授权
    Image processing method for mobile terminal 有权
    移动终端的图像处理方法

    公开(公告)号：US09223486B2

    公开(公告)日：2015-12-29

    申请号：US12769758

    申请日：2010-04-29

    申请人： Seung Woo Shin ,  In Won Jong ,  Sang Ki Lee

    发明人： Seung Woo Shin ,  In Won Jong ,  Sang Ki Lee

    IPC分类号： G06F3/048 ,  G09G5/00 ,  G06F3/0484 ,  G06F3/0488

    CPC分类号： G06F3/04845 ,  G06F3/04883 ,  G06F2203/04806

    摘要： An image processing method based on zooming for a mobile terminal permits touch zooming on touch screens of a plurality of devices. The image processing method preferably includes: displaying, in response to entering a touch on a touch screen displaying an image, a zooming GUI indicator for image zooming operation; performing image zooming on the touch screen in response to entering a touch point move while retaining the touch; and hiding the zooming GUI indicator from the touch screen in response to entering a touch release.

    摘要翻译： 基于用于移动终端的缩放的图像处理方法允许在多个设备的触摸屏上进行触摸变焦。 图像处理方法优选地包括：响应于在显示图像的触摸屏上的触摸来显示用于图像缩放操作的缩放GUI指示符; 在保持触摸的同时响应于进入触摸点移动而在触摸屏上执行图像缩放; 以及响应于进入触摸释放而从触摸屏隐藏缩放GUI指示符。

    EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR
    5.
    发明申请
    EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR 审中-公开
    制造半导体设备

    公开(公告)号：US20140209024A1

    公开(公告)日：2014-07-31

    申请号：US14235901

    申请日：2012-07-31

    申请人： Young Dae Kim ,  Jun Jin Hyon ,  Sang Ho Woo ,  Seung Woo Shin ,  Hai Won Kim

    发明人： Young Dae Kim ,  Jun Jin Hyon ,  Sang Ho Woo ,  Seung Woo Shin ,  Hai Won Kim

    IPC分类号： H01L21/67

    CPC分类号： H01L21/67184 ,  C30B25/08 ,  C30B29/06 ,  C30B35/005 ,  H01L21/02046 ,  H01L21/67051 ,  H01L21/67178 ,  H01L21/67757

    摘要： Provided is an equipment for manufacturing a semiconductor. The equipment for manufacturing a semiconductor includes a cleaning chamber in which a cleaning process is performed on substrates, an epitaxial chamber in which an epitaxial process for forming an epitaxial layer on each of the substrates is performed, a buffer chamber having a storage space for storing the substrates, and a transfer chamber to which the cleaning chamber, the buffer chamber, and the epitaxial chamber are connected to side surfaces thereof, the transfer chamber comprising a substrate handler for transferring the substrates between the cleaning chamber, the buffer chamber, and the epitaxial chamber. The substrate handler successively transfers the substrates, on which the cleaning process is completed, into the buffer chamber, transfers the substrates stacked within the buffer chamber the epitaxial chamber, and successively transfers the substrates, on which the epitaxial layers are respectively formed, into the buffer chamber.

    摘要翻译： 提供了一种用于制造半导体的设备。 用于制造半导体的设备包括其中对基板进行清洁处理的清洁室，其中执行在每个基板上形成外延层的外延工艺的外延室，具有用于存储的存储空间的缓冲室 所述基板和所述清洁室，所述缓冲室和所述外延室连接到其侧表面的传送室，所述传送室包括用于在所述清洁室，所述缓冲室和所述缓冲室之间传送所述基板的基板处理器 外延室。 衬底处理器将完成清洁处理的衬底连续地传送到缓冲室中，将堆叠在缓冲室内的衬底传送到外延室，并且将分别形成有外延层的衬底依次传送到 缓冲室。

    Method of Fabricating Flash Memory Device
    7.
    发明申请
    Method of Fabricating Flash Memory Device 审中-公开
    制造闪存设备的方法

    公开(公告)号：US20090004818A1

    公开(公告)日：2009-01-01

    申请号：US11956865

    申请日：2007-12-14

    申请人： Seung Woo Shin ,  Eun Soo Kim ,  Suk Joong Kim ,  Jong Hye Cho

    发明人： Seung Woo Shin ,  Eun Soo Kim ,  Suk Joong Kim ,  Jong Hye Cho

    IPC分类号： H01L21/762

    CPC分类号： H01L21/76232 ,  H01L27/11521

    摘要： Disclosed herein is a method of fabricating a semiconductor flash memory device, which method avoids and prevents damage to the conductive layer of a floating gate. The disclosed method can prevent a reduction in the charge trap density characteristics and improve the yield of the device.

    摘要翻译： 本文公开了一种制造半导体闪速存储器件的方法，该方法避免并防止对浮动栅极的导电层的损坏。 所公开的方法可以防止电荷陷阱密度特性的降低并且提高器件的产量。

    Method of forming oxynitride film
    8.
    发明授权
    Method of forming oxynitride film 失效
    形成氮氧化物膜的方法

    公开(公告)号：US06777348B2

    公开(公告)日：2004-08-17

    申请号：US10631362

    申请日：2003-07-31

    申请人： Seung Woo Shin ,  Cha Deok Dong

    发明人： Seung Woo Shin ,  Cha Deok Dong

    IPC分类号： H01L2131

    CPC分类号： H01L21/0214 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/3144 ,  H01L21/31662

    摘要： Disclosed is a method of forming an oxynitride film. The method comprises the steps of loading a silicon substrate into an oxidization furnace, implanting an oxygen based source gas into the oxidization furnace to grow a pure silicon oxide film on the silicon substrate, blocking implantation of the oxygen based source gas and implanting an inert gas to exhaust the oxygen based source gas remaining within the oxidization furnace, raising a temperature within the oxidization furnace to a nitrification process temperature, stabilizing the temperature within the oxidization furnace, implementing a nitrification process for the pure silicon oxide film by implanting a nitrogen based source gas, and stopping implantation of the nitrogen based source gas and rapidly cooling the oxidization furnace while implanting the inert gas into the oxidization furnace.

    摘要翻译： 公开了形成氮氧化物膜的方法。 该方法包括以下步骤：将硅衬底装载到氧化炉中，将氧基源气体注入到氧化炉中以在硅衬底上生长纯氧化硅膜，阻止氧基源气体的注入和注入惰性气体 排出残留在氧化炉内的氧气源气体，将氧化炉内的温度升高至硝化处理温度，稳定氧化炉内的温度，通过注入氮源，实施纯氧化硅膜的硝化处理 气体，并停止氮源气体的注入，并在将惰性气体注入氧化炉的同时快速冷却氧化炉。

    EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR
    10.
    发明申请
    EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR 审中-公开
    制造半导体设备

    公开(公告)号：US20140174357A1

    公开(公告)日：2014-06-26

    申请号：US14235313

    申请日：2012-07-31

    申请人： Young Dae Kim ,  Jun Jin Hyon ,  Sang Ho Woo ,  Seung Woo Shin ,  Hai Won Kim

    发明人： Young Dae Kim ,  Jun Jin Hyon ,  Sang Ho Woo ,  Seung Woo Shin ,  Hai Won Kim

    IPC分类号： C30B25/02

    CPC分类号： C30B25/02 ,  C23C16/0236 ,  C23C16/54 ,  C30B25/08 ,  C30B35/005 ,  H01L21/02046 ,  H01L21/67051 ,  H01L21/67178 ,  H01L21/67757

    摘要： Provided is an equipment for manufacturing a semiconductor. The equipment for manufacturing a semiconductor includes a cleaning chamber in which a cleaning process is performed on substrates, an epitaxial chamber in which an epitaxial process for forming an epitaxial layer on each of the substrates is performed, and a transfer chamber to which the cleaning chamber and the epitaxial chamber are connected to sides surfaces thereof, the transfer chamber including a substrate handler for transferring the substrates, on which the cleaning process is completed, into the epitaxial chamber. The cleaning chamber is performed in a batch type with respect to the plurality of substrates.

    摘要翻译： 提供了一种用于制造半导体的设备。 用于制造半导体的设备包括其中对基板进行清洁处理的清洁室，其中执行在每个基板上形成外延层的外延工艺的外延室，以及清洁室 并且外延室连接到其侧表面，转移室包括用于将完成清洁处理的基板转移到外延室中的基板处理器。 清洁室相对于多个基板以批式进行。