公开(公告)号：US20070020780A1

公开(公告)日：2007-01-25

申请号：US11370478

申请日：2006-03-07

申请人： Kye-Hyun Baek ,  Chang-Jin Kang ,  Gyung-Jin Min ,  Yong-Jin Kim

发明人： Kye-Hyun Baek ,  Chang-Jin Kang ,  Gyung-Jin Min ,  Yong-Jin Kim

IPC分类号： H01L21/66 ,  G01R31/26

CPC分类号： H01L22/00

摘要： In one embodiment, a method of processing a semiconductor substrate includes measuring a state of a processing chamber contamination before processing each semiconductor substrate. A process condition is then changed responsive to the state of chamber contamination to compensate for an influence of the state of chamber contamination on the process condition. If the change in process condition is outside of predetermined margin, a warning may be generated and the process may be stopped.

摘要翻译： 在一个实施例中，处理半导体衬底的方法包括在处理每个半导体衬底之前测量处理室污染的状态。 响应于室污染的状态来改变工艺条件以补偿室污染状态对工艺条件的影响。 如果处理条件的改变超出预定余量，则可能产生警告并且可以停止处理。

公开(公告)号：US20120055908A1

公开(公告)日：2012-03-08

申请号：US13220084

申请日：2011-08-29

申请人： Sang-Wuk Park ,  Geum-Jung Seong ,  Kye-Hyun Baek ,  Yong-Jin Kim ,  Chan-Mi Lee

发明人： Sang-Wuk Park ,  Geum-Jung Seong ,  Kye-Hyun Baek ,  Yong-Jin Kim ,  Chan-Mi Lee

IPC分类号： B23K26/36 ,  B23K26/04

CPC分类号： B23K26/0661 ,  B23K26/032 ,  B23K26/361 ,  H01J37/32972 ,  H01L22/12 ,  H01L22/26

摘要： Provided is an etching system and a method of controlling etching process condition. The etching system includes a light source that irradiates incident light into a target wafer, a light intensity measuring unit that measures light intensity according to the wavelength of interference light generated by interference between reflected light beams from the target wafer, a signal processor that detects a time point at which an extreme value in the intensity is generated when the intensity of interference light varies according to the wavelength, and a controller that compares the extreme value generating time point detected from the signal processor with a reference time point corresponding to the extreme value generating time point and controls a process condition according to the comparison result.

摘要翻译： 提供了蚀刻系统和控制蚀刻工艺条件的方法。 蚀刻系统包括将入射光照射到目标晶片中的光源，光强度测量单元，其根据由来自目标晶片的反射光之间的干涉产生的干涉光的波长来测量光强度;信号处理器，其检测 当干扰光的强度根据波长变化时产生强度极值的时间点，以及将从信号处理器检测的极值产生时间点与对应于极值的参考时间点进行比较的控制器 产生时间点，并根据比较结果控制过程条件。

公开(公告)号：US20110140719A1

公开(公告)日：2011-06-16

申请号：US12872574

申请日：2010-08-31

申请人： HO-KI LEE ,  Kye-Hyun Baek ,  Yong-Jin Kim

发明人： HO-KI LEE ,  Kye-Hyun Baek ,  Yong-Jin Kim

IPC分类号： G01R27/26

CPC分类号： H01J37/32935 ,  H01J37/32174

摘要： A method of monitoring a semiconductor process is provided. The method includes preparing a process chamber including first and second electrodes spaced apart from and facing each other, and connecting the first electrode to a ground and connecting the second electrode to a radio frequency power source. An impedance in the process chamber is measured using a voltage value and a current value at the second electrode. The consumption amount of consumables in the process chamber is checked using the impedance. Varied process conditions are adjusted within an initial set range.

摘要翻译： 提供了一种监测半导体工艺的方法。 该方法包括制备包括彼此间隔开并面对彼此的第一和第二电极以及将第一电极连接到地面并将第二电极连接到射频电源的处理室。 使用第二电极处的电压值和电流值来测量处理室中的阻抗。 使用阻抗检查处理室中的消耗品的消耗量。 不同的工艺条件在初始设定范围内进行调整。

公开(公告)号：US08498731B2

公开(公告)日：2013-07-30

申请号：US13207829

申请日：2011-08-11

申请人： Kye-Hyun Baek ,  Yoon-Jae Kim ,  Yong-Jin Kim

发明人： Kye-Hyun Baek ,  Yoon-Jae Kim ,  Yong-Jin Kim

IPC分类号： G06F19/00

CPC分类号： H01J37/32935

摘要： Provided are a process-parameter prognostic system for predicting the shape of a semiconductor structure, a semiconductor fabrication apparatus having the process-parameter prognostic system, and a method of using the same. The process-parameter prognostic system may have a process prediction unit and a process-change point corresponding unit. The process prediction unit and the process-change point corresponding unit may obtain predicted parameters using measured parameters of semiconductor structures and sensor parameters of plasmas corresponding to the semiconductor structures.

摘要翻译： 提供了一种用于预测半导体结构的形状的工艺参数预测系统，具有工艺参数预测系统的半导体制造装置及其使用方法。 过程参数预测系统可以具有过程预测单元和过程变化点对应单元。 处理预测单元和处理变化点对应单元可以使用半导体结构的测量参数和对应于半导体结构的等离子体的传感器参数来获得预测参数。

公开(公告)号：US20100262398A1

公开(公告)日：2010-10-14

申请号：US12759851

申请日：2010-04-14

申请人： Kye-Hyun Baek ,  Yoon-Jae Kim ,  Yong-Jin Kim

发明人： Kye-Hyun Baek ,  Yoon-Jae Kim ,  Yong-Jin Kim

IPC分类号： G06F19/00

CPC分类号： G05B19/4183 ,  G05B2219/37224 ,  G05B2219/37309 ,  Y02P90/10 ,  Y02P90/14

摘要： A method of selecting a sensor in a semiconductor manufacturing process is provided. The method includes measuring responses of a plurality of sensors when a first of a plurality of process conditions is varied, identifying one or more of the sensors having a steady state response after the first of the process conditions is varied, and selecting a sensor having a highest value within a response range from among the sensors having the steady state response for the first process condition that is varied. This methodology may be performed for multiple different process conditions. Thus, when process conditions in multiple processes of manufacturing a semiconductor device are varied, sensors having a steady state response can be selected from among multiple sensors for detecting abnormalities in the processes.

摘要翻译： 提供了一种在半导体制造过程中选择传感器的方法。 该方法包括当多个处理条件中的第一个被改变时，测量多个传感器的响应，在第一个处理条件变化之后识别具有稳态响应的一个或多个传感器，并且选择具有 在具有变化的第一处理条件的稳态响应的传感器的响应范围内的最高值。 该方法可以针对多个不同的工艺条件进行。 因此，当制造半导体器件的多个工艺过程中的工艺条件变化时，可以从用于检测工艺中的异常的多个传感器中选择具有稳定状态响应的传感器。

公开(公告)号：US20080035170A1

公开(公告)日：2008-02-14

申请号：US11878493

申请日：2007-07-25

申请人： Kye-Hyun Baek ,  Jong-Hoon Kang ,  Yong-Jin Kim ,  Young-Soo Lim

发明人： Kye-Hyun Baek ,  Jong-Hoon Kang ,  Yong-Jin Kim ,  Young-Soo Lim

IPC分类号： B08B6/00

CPC分类号： B08B7/0035 ,  H01J37/32862

摘要： In a cleaning apparatus and a method of cleaning a chamber used in manufacturing a semiconductor device, a first plasma may be provided into a chamber to remove a first residue from an inner wall of the chamber where the first residue is attached. A second plasma may then be provided into the chamber to remove a second residue formed by the first plasma from an inside of the chamber where the second residue remains. The second residue formed by the first plasma used to clean the chamber may not pollute a semiconductor substrate located in the chamber.

摘要翻译： 在清洁装置和清洁用于制造半导体装置的室的方法中，可以将第一等离子体提供到室中，以从第一残留物附着的室的内壁去除第一残留物。 然后可以将第二等离子体提供到腔室中以从残留有第二残留物的腔室的内部除去由第一等离子体形成的第二残留物。 由用于清洁腔室的第一等离子体形成的第二残留物可能不会污染位于腔室中的半导体衬底。

公开(公告)号：US08872059B2

公开(公告)日：2014-10-28

申请号：US13220084

申请日：2011-08-29

申请人： Sang-Wuk Park ,  Geum-Jung Seong ,  Kye-Hyun Baek ,  Yong-Jin Kim ,  Chan-Mi Lee

发明人： Sang-Wuk Park ,  Geum-Jung Seong ,  Kye-Hyun Baek ,  Yong-Jin Kim ,  Chan-Mi Lee

IPC分类号： B23K26/03 ,  B23K26/04 ,  H01L21/00 ,  B23K26/06 ,  H01L21/66 ,  H01J37/32 ,  B23K26/36

CPC分类号： B23K26/0661 ,  B23K26/032 ,  B23K26/361 ,  H01J37/32972 ,  H01L22/12 ,  H01L22/26

摘要： Provided is an etching system and a method of controlling etching process condition. The etching system includes a light source that irradiates incident light into a target wafer, a light intensity measuring unit that measures light intensity according to the wavelength of interference light generated by interference between reflected light beams from the target wafer, a signal processor that detects a time point at which an extreme value in the intensity is generated when the intensity of interference light varies according to the wavelength, and a controller that compares the extreme value generating time point detected from the signal processor with a reference time point corresponding to the extreme value generating time point and controls a process condition according to the comparison result.

摘要翻译： 提供了蚀刻系统和控制蚀刻工艺条件的方法。 蚀刻系统包括将入射光照射到目标晶片中的光源，光强度测量单元，其根据由来自目标晶片的反射光之间的干涉产生的干涉光的波长来测量光强度;信号处理器，其检测 当干扰光的强度根据波长变化时产生强度极值的时间点，以及将从信号处理器检测的极值产生时间点与对应于极值的参考时间点进行比较的控制器 产生时间点，并根据比较结果控制过程条件。

公开(公告)号：US20110320027A1

公开(公告)日：2011-12-29

申请号：US13207829

申请日：2011-08-11

申请人： Kye-Hyun Baek ,  Yoon-Jae Kim ,  Yong-Jin Kim

发明人： Kye-Hyun Baek ,  Yoon-Jae Kim ,  Yong-Jin Kim

IPC分类号： G06F19/00

CPC分类号： H01J37/32935

摘要： Provided are a process-parameter prognostic system for predicting the shape of a semiconductor structure, a semiconductor fabrication apparatus having the process-parameter prognostic system, and a method of using the same. The process-parameter prognostic system may have a process prediction unit and a process-change point corresponding unit. The process prediction unit and the process-change point corresponding unit may obtain predicted parameters using measured parameters of semiconductor structures and sensor parameters of plasmas corresponding to the semiconductor structures.

摘要翻译： 提供了一种用于预测半导体结构的形状的工艺参数预测系统，具有工艺参数预测系统的半导体制造装置及其使用方法。 过程参数预测系统可以具有过程预测单元和过程变化点对应单元。 处理预测单元和处理变化点对应单元可以使用半导体结构的测量参数和对应于半导体结构的等离子体的传感器参数来获得预测参数。

公开(公告)号：US08005562B2

公开(公告)日：2011-08-23

申请号：US12257006

申请日：2008-10-23

申请人： Kye-Hyun Baek ,  Yoon-Jae Kim ,  Yong-Jin Kim

发明人： Kye-Hyun Baek ,  Yoon-Jae Kim ,  Yong-Jin Kim

IPC分类号： G06F19/00

CPC分类号： H01J37/32935

摘要： Provided are a process-parameter prognostic system for predicting the shape of a semiconductor structure, a semiconductor fabrication apparatus having the process-parameter prognostic system, and a method of using the same. The process-parameter prognostic system may have a process prediction unit and a process-change point corresponding unit. The process prediction unit and the process-change point corresponding unit may obtain predicted parameters using measured parameters of semiconductor structures and sensor parameters of plasmas corresponding to the semiconductor structures.

摘要翻译： 提供了一种用于预测半导体结构的形状的工艺参数预测系统，具有工艺参数预测系统的半导体制造装置及其使用方法。 过程参数预测系统可以具有过程预测单元和过程变化点对应单元。 处理预测单元和处理变化点对应单元可以使用半导体结构的测量参数和对应于半导体结构的等离子体的传感器参数来获得预测参数。

公开(公告)号：US20090105853A1

公开(公告)日：2009-04-23

申请号：US12257006

申请日：2008-10-23

申请人： Kye-Hyun Baek ,  Yoon-Jae Kim ,  Yong-Jin Kim

发明人： Kye-Hyun Baek ,  Yoon-Jae Kim ,  Yong-Jin Kim

IPC分类号： G05B13/04

CPC分类号： H01J37/32935

摘要： Provided are a process-parameter prognostic system for predicting the shape of a semiconductor structure, a semiconductor fabrication apparatus having the process-parameter prognostic system, and a method of using the same. The process-parameter prognostic system may have a process prediction unit and a process-change point corresponding unit. The process prediction unit and the process-change point corresponding unit may obtain predicted parameters using measured parameters of semiconductor structures and sensor parameters of plasmas corresponding to the semiconductor structures.

摘要翻译： 提供了一种用于预测半导体结构的形状的工艺参数预测系统，具有工艺参数预测系统的半导体制造装置及其使用方法。 过程参数预测系统可以具有过程预测单元和过程变化点对应单元。 处理预测单元和处理变化点对应单元可以使用半导体结构的测量参数和对应于半导体结构的等离子体的传感器参数来获得预测参数。