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    Methods of Forming a Photoresist Pattern Using Plasma Treatment of Photoresist Patterns
    1.
    发明申请
    Methods of Forming a Photoresist Pattern Using Plasma Treatment of Photoresist Patterns 审中-公开
    使用等离子体处理光刻胶图案形成光刻胶图案的方法

    公开(公告)号：US20110300712A1

    公开(公告)日：2011-12-08

    申请号：US13103375

    申请日：2011-05-09

    申请人： Kyoung-Mi Kim ,  Jeong-Ju Park ,  Mi-Ra Park ,  Bo-Hee Lee ,  Jae-Ho Kim ,  Young-Ho Kim

    发明人： Kyoung-Mi Kim ,  Jeong-Ju Park ,  Mi-Ra Park ,  Bo-Hee Lee ,  Jae-Ho Kim ,  Young-Ho Kim

    IPC分类号： H01L21/308 ,  H01L21/312

    CPC分类号： H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/11521

    摘要： Methods of forming a photoresist pattern include forming a first photoresist pattern on a substrate and treating the first photoresist pattern with plasma that modifies etching characteristics of the first photoresist pattern. This modification may include making the first photoresist pattern more susceptible to removal during subsequent processing. The plasma-treated first photoresist pattern is covered with a second photoresist layer, which is patterned into a second photoresist pattern that contacts sidewalls of the plasma-treated first photoresist pattern. The plasma-treated first photoresist pattern is selectively removed from the substrate to reveal the remaining second photoresist pattern. The second photoresist pattern is used as an etching mask during the selective etching of a portion of the substrate (e.g., target layer). The use of the second photoresist pattern as an etching mask may yield narrower linewidths in the etched portion of the substrate than are achievable using the first photoresist pattern alone.

    摘要翻译： 形成光致抗蚀剂图案的方法包括在基板上形成第一光致抗蚀剂图案，并用等离子体处理第一光致抗蚀剂图案，其改变第一光致抗蚀剂图案的蚀刻特性。 该修改可以包括使第一光致抗蚀剂图案在随后的处理期间更易于去除。 等离子体处理的第一光致抗蚀剂图案被第二光致抗蚀剂层覆盖，第二光致抗蚀剂层被图案化成与等离子体处理的第一光致抗蚀剂图案的侧壁接触的第二光致抗蚀剂 从衬底选择性地去除等离子体处理的第一光致抗蚀剂图案以显示剩余的第二光致抗蚀剂图案。 在选择性蚀刻基板（例如，目标层）的一部分期间，将第二光致抗蚀剂图案用作蚀刻掩模。 使用第二光致抗蚀剂图案作为蚀刻掩模可以在衬底的蚀刻部分中产生比仅使用第一光致抗蚀剂图案可实现的更窄的线宽。

    Methods of manufacturing semiconductor devices using photolithography
    2.
    发明授权
    Methods of manufacturing semiconductor devices using photolithography 有权
    使用光刻制造半导体器件的方法

    公开(公告)号：US08551689B2

    公开(公告)日：2013-10-08

    申请号：US13117667

    申请日：2011-05-27

    申请人： Mi-Ra Park ,  Kyoung-Mi Kim ,  Jeong-Ju Park ,  Bo-Hee Lee ,  Jae-Ho Kim ,  Young-Ho Kim

    发明人： Mi-Ra Park ,  Kyoung-Mi Kim ,  Jeong-Ju Park ,  Bo-Hee Lee ,  Jae-Ho Kim ,  Young-Ho Kim

    IPC分类号： G03F7/26

    CPC分类号： H01L21/0273 ,  G03F7/0035 ,  G03F7/091 ,  G03F7/40

    摘要： A method of manufacturing a semiconductor device using a photolithography process may include forming an anti-reflective layer and a first photoresist film on a lower surface. The first photoresist film may be exposed to light and a first photoresist pattern having a first opening may be formed by developing the first photoresist film. A plasma treatment can be performed on the first photoresist pattern and a second photoresist film may be formed on the first photoresist pattern, which may be exposed to light. A second photoresist pattern may be formed to have a second opening by developing the second photoresist film. Here, the second opening may be substantially narrower than the first opening.

    摘要翻译： 使用光刻工艺制造半导体器件的方法可以包括在下表面上形成抗反射层和第一光致抗蚀剂膜。 可以将第一光致抗蚀剂膜暴露于光，并且可以通过显影第一光致抗蚀剂膜来形成具有第一开口的第一光致抗蚀剂图案。 可以在第一光致抗蚀剂图案上进行等离子体处理，并且可以在可以暴露于光的第一光致抗蚀剂图案上形成第二光致抗蚀剂膜。 可以通过显影第二光致抗蚀剂膜来形成第二光致抗蚀剂图案以具有第二开口。 这里，第二开口可以比第一开口窄得多。

    METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING PHOTOLITHOGRAPHY
    3.
    发明申请
    METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING PHOTOLITHOGRAPHY 有权
    使用光刻技术制造半导体器件的方法

    公开(公告)号：US20110294072A1

    公开(公告)日：2011-12-01

    申请号：US13117667

    申请日：2011-05-27

    申请人： Mi-Ra PARK ,  Kyoung-Mi Kim ,  Jeong-Ju Park ,  Bo-Hee Lee ,  Jae-Ho Kim ,  Young-Ho Kim

    发明人： Mi-Ra PARK ,  Kyoung-Mi Kim ,  Jeong-Ju Park ,  Bo-Hee Lee ,  Jae-Ho Kim ,  Young-Ho Kim

    IPC分类号： G03F7/20

    CPC分类号： H01L21/0273 ,  G03F7/0035 ,  G03F7/091 ,  G03F7/40

    摘要： A method of manufacturing a semiconductor device using a photolithography process may include forming an anti-reflective layer and a first photoresist film on a lower surface. The first photoresist film may be exposed to light and a first photoresist pattern having a first opening may be formed by developing the first photoresist film. A plasma treatment can be performed on the first photoresist pattern and a second photoresist film may be formed on the first photoresist pattern, which may be exposed to light. A second photoresist pattern may be formed to have a second opening by developing the second photoresist film. Here, the second opening may be substantially narrower than the first opening.

    摘要翻译： 使用光刻工艺制造半导体器件的方法可以包括在下表面上形成抗反射层和第一光致抗蚀剂膜。 可以将第一光致抗蚀剂膜暴露于光，并且可以通过显影第一光致抗蚀剂膜来形成具有第一开口的第一光致抗蚀剂图案。 可以在第一光致抗蚀剂图案上进行等离子体处理，并且可以在可以暴露于光的第一光致抗蚀剂图案上形成第二光致抗蚀剂膜。 可以通过显影第二光致抗蚀剂膜来形成第二光致抗蚀剂图案以具有第二开口。 这里，第二开口可以比第一开口窄得多。

    Method of forming fine pattern employing self-aligned double patterning
    4.
    发明授权
    Method of forming fine pattern employing self-aligned double patterning 失效
    使用自对准双重图案形成精细图案的方法

    公开(公告)号：US08071484B2

    公开(公告)日：2011-12-06

    申请号：US12132548

    申请日：2008-06-03

    申请人： Kyoung-Mi Kim ,  Jae-Ho Kim ,  Young-Ho Kim ,  Myung-Sun Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    发明人： Kyoung-Mi Kim ,  Jae-Ho Kim ,  Young-Ho Kim ,  Myung-Sun Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    IPC分类号： H01L21/311 ,  B44C1/22

    CPC分类号： H01L21/0337

    摘要： There are provided a method of forming a fine pattern employing self-aligned double patterning. The method includes providing a substrate. First mask patterns are formed on the substrate. A reactive layer is formed on the substrate having the first mask patterns. The reactive layer adjacent to the first mask patterns is reacted using a chemical attachment process, thereby forming sacrificial layers along outer walls of the first mask patterns. The reactive layer that is not reacted is removed to expose the sacrificial layers. Second mask patterns are formed between the sacrificial layers adjacent to sidewalls of the first mask patterns facing each other. The sacrificial layers are removed to expose the first and second mask patterns and the substrate exposed between the first and second mask patterns. The substrate is etched using the first and second mask patterns as an etching mask.

    摘要翻译： 提供了使用自对准双重图案形成精细图案的方法。 该方法包括提供基板。 在基板上形成第一掩模图案。 在具有第一掩模图案的基板上形成反应层。 使用化学附着工艺反应与第一掩模图案相邻的反应层，从而沿着第一掩模图案的外壁形成牺牲层。 去除未反应的反应层以暴露牺牲层。 在与彼此面对的第一掩模图案的侧壁相邻的牺牲层之间形成第二掩模图案。 去除牺牲层以暴露在第一和第二掩模图案之间暴露的第一和第二掩模图案和衬底。 使用第一和第二掩模图案作为蚀刻掩模蚀刻衬底。

    METHOD OF FORMING A PATTERN AND METHOD OF MANUFACTURING A CAPACITOR
    5.
    发明申请
    METHOD OF FORMING A PATTERN AND METHOD OF MANUFACTURING A CAPACITOR 有权
    形成图案的方法和制造电容器的方法

    公开(公告)号：US20080121609A1

    公开(公告)日：2008-05-29

    申请号：US11945934

    申请日：2007-11-27

    申请人： Kyoung-Mi Kim ,  Jae-Ho Kim ,  Young-Ho Kim ,  Myung-Sun Kim

    发明人： Kyoung-Mi Kim ,  Jae-Ho Kim ,  Young-Ho Kim ,  Myung-Sun Kim

    IPC分类号： H01G4/00

    CPC分类号： H01G4/33 ,  H01L27/10814 ,  H01L27/10852 ,  H01L28/91

    摘要： In a method of forming a pattern, a mold layer having an opening is formed on a substrate. A conductive layer is formed on the mold layer having the opening, the conductive layer having a substantially uniform thickness. A buffer layer pattern is formed in the opening having the conductive layer, the buffer layer pattern having a cross-linked structure of water-soluble copolymers including a repeating unit of N-vinyl-2-pyrrolidone and a repeating unit of acrylate. An upper portion of the conductive layer exposed over the buffer layer pattern is etched. Accordingly, a conductive pattern for a semiconductor device is formed on the substrate. The method of forming a pattern may simplify manufacturing processes for a capacitor and a semiconductor device, and may improve their efficiencies.

    摘要翻译： 在形成图案的方法中，在基板上形成具有开口的模具层。 在具有开口的模具层上形成导电层，导电层具有基本均匀的厚度。 在具有导电层的开口中形成缓冲层图案，缓冲层图案具有包含N-乙烯基-2-吡咯烷酮的重复单元和丙烯酸重复单元的水溶性共聚物的交联结构。 蚀刻在缓冲层图案上暴露的导电层的上部。 因此，在基板上形成用于半导体器件的导电图案。 形成图案的方法可以简化电容器和半导体器件的制造工艺，并且可以提高它们的效率。

    Photoresist compositions and methods of forming a pattern using the same
    6.
    发明申请
    Photoresist compositions and methods of forming a pattern using the same 审中-公开
    光刻胶组合物和使用其形成图案的方法

    公开(公告)号：US20080102403A1

    公开(公告)日：2008-05-01

    申请号：US11977893

    申请日：2007-10-26

    申请人： Seong-June Kim ,  Kyoung-Mi Kim ,  Jae-Ho Kim ,  Young-Ho Kim ,  Seok Han ,  Hyo-Jin Yun

    发明人： Seong-June Kim ,  Kyoung-Mi Kim ,  Jae-Ho Kim ,  Young-Ho Kim ,  Seok Han ,  Hyo-Jin Yun

    IPC分类号： G03C1/00

    CPC分类号： G03F7/0397 ,  G03F7/40

    摘要： A photoresist-composition includes about 4 to about 20 percent by weight of an acrylate copolymer; about 0.1 to about 0.5 percent by weight of a photoacid generator; and a solvent. The acrylate copolymer includes about 28 to about 38 percent by mole of a first repeating unit represented by Formula (1), about 28 to about 38 percent by mole of a second repeating unit represented by Formula (2), about 0.5 to about 22 percent by mole of a third repeating unit represented by Formula (3) and about 4 to about 42 percent by mole of a fourth repeating unit represented by Formula (4), wherein R1, R2, R3 and R4 independently represent a hydrogen atom or a C1-C3 alkyl group, X is a blocking group including an alkyl-substituted adamantane or an alkyl-substituted tricycloalkane, Y is a blocking group including a lactone, Z1 is a blocking group including a hydroxyl-substituted adamantane, and Z2 is a blocking group including an alkoxy-substituted adamantane.

    摘要翻译： 光致抗蚀剂组合物包含约4至约20重量％的丙烯酸酯共聚物; 约0.1至约0.5重量％的光酸产生剂; 和溶剂。 丙烯酸酯共聚物包含约28至约38摩尔％的由式（1）表示的第一重复单元，约28至约38摩尔％的由式（2）表示的第二重复单元，约0.5至约22重量％ 的由式（3）表示的第三重复单元和约4至约42摩尔％的由式（4）表示的第四重复单元，其中R 1，R 2 R 3和R 4独立地表示氢原子或C 1 -C 3 - 烷基，X是包括烷基取代的金刚烷或烷基取代的三环烷烃的封闭基团，Y是包含内酯的封闭基团，Z 1是包含羟基取代的金刚烷的封闭基团， Z 2是含有烷氧基取代的金刚烷的封端基。