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    Methods of forming a pattern using negative-type photoresist compositions
    3.
    发明申请
    Methods of forming a pattern using negative-type photoresist compositions 有权
    使用负型光致抗蚀剂组合物形成图案的方法

    公开(公告)号：US20100248134A1

    公开(公告)日：2010-09-30

    申请号：US12662076

    申请日：2010-03-30

    申请人： Kyoung-Mi Kim ,  Jin-Baek Kim ,  Ji-Young Park ,  Young-Ho Kim

    发明人： Kyoung-Mi Kim ,  Jin-Baek Kim ,  Ji-Young Park ,  Young-Ho Kim

    IPC分类号： G03F7/20 ,  G03F7/004

    CPC分类号： G03F7/0758 ,  G03F7/0382 ,  G03F7/094 ,  H01L21/0271 ,  H01L21/3081 ,  H01L21/31144 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10873 ,  H01L27/11546

    摘要： A method of forming a pattern and a negative-type photoresist composition, the method including forming a photoresist film on a substrate by coating a photoresist composition thereon, the photoresist composition including a polymer, a photoacid generator, and a solvent, wherein the polymer includes an alkoxysilyl group as a side chain and is cross-linkable by an acid to be insoluble in a developer; curing a first portion of the photoresist film by exposing the first portion to light, the exposed first portion being cured by a cross-linking reaction of the alkoxysilyl groups therein; and providing a developer to the photoresist film to remove a second portion of the photoresist film that is not exposed to light, thereby forming a photoresist pattern on the substrate.

    摘要翻译： 一种形成图案和负型光致抗蚀剂组合物的方法，所述方法包括通过在其上涂覆光致抗蚀剂组合物在基底上形成光致抗蚀剂膜，所述光致抗蚀剂组合物包括聚合物，光致酸产生剂和溶剂，其中所述聚合物包括 作为侧链的烷氧基甲硅烷基，可以被不可溶于显影剂的酸交联; 通过将第一部分暴露于光来固化光致抗蚀剂膜的第一部分，暴露的第一部分通过其中的烷氧基甲硅烷基的交联反应固化; 以及向所述光致抗蚀剂膜提供显影剂以去除未曝光的所述光致抗蚀剂膜的第二部分，由此在所述基板上形成光致抗蚀剂图案。

    Methods of forming a pattern using negative-type photoresist compositions
    4.
    发明授权
    Methods of forming a pattern using negative-type photoresist compositions 有权
    使用负型光致抗蚀剂组合物形成图案的方法

    公开(公告)号：US08377626B2

    公开(公告)日：2013-02-19

    申请号：US12662076

    申请日：2010-03-30

    申请人： Kyoung-Mi Kim ,  Jin-Baek Kim ,  Ji-Young Park ,  Young-Ho Kim

    发明人： Kyoung-Mi Kim ,  Jin-Baek Kim ,  Ji-Young Park ,  Young-Ho Kim

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/40

    CPC分类号： G03F7/0758 ,  G03F7/0382 ,  G03F7/094 ,  H01L21/0271 ,  H01L21/3081 ,  H01L21/31144 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10873 ,  H01L27/11546

    摘要： A method of forming a pattern and a negative-type photoresist composition, the method including forming a photoresist film on a substrate by coating a photoresist composition thereon, the photoresist composition including a polymer, a photoacid generator, and a solvent, wherein the polymer includes an alkoxysilyl group as a side chain and is cross-linkable by an acid to be insoluble in a developer; curing a first portion of the photoresist film by exposing the first portion to light, the exposed first portion being cured by a cross-linking reaction of the alkoxysilyl groups therein; and providing a developer to the photoresist film to remove a second portion of the photoresist film that is not exposed to light, thereby forming a photoresist pattern on the substrate.

    摘要翻译： 一种形成图案和负型光致抗蚀剂组合物的方法，所述方法包括通过在其上涂覆光致抗蚀剂组合物在基底上形成光致抗蚀剂膜，光致抗蚀剂组合物包括聚合物，光致酸产生剂和溶剂，其中聚合物包括 作为侧链的烷氧基甲硅烷基，可以被不可溶于显影剂的酸交联; 通过将第一部分暴露于光来固化光致抗蚀剂膜的第一部分，暴露的第一部分通过其中的烷氧基甲硅烷基的交联反应固化; 以及向所述光致抗蚀剂膜提供显影剂以去除未曝光的所述光致抗蚀剂膜的第二部分，由此在所述基板上形成光致抗蚀剂图案。

    Siloxane polymer composition, method of forming a pattern using the same, and method of manufacturing a semiconductor using the same
    5.
    发明授权
    Siloxane polymer composition, method of forming a pattern using the same, and method of manufacturing a semiconductor using the same 失效
    硅氧烷聚合物组合物，使用其形成图案的方法，以及使用其制造半导体的方法

    公开(公告)号：US07776730B2

    公开(公告)日：2010-08-17

    申请号：US12216682

    申请日：2008-07-09

    申请人： Kyoung-Mi Kim ,  Young-Ho Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    发明人： Kyoung-Mi Kim ,  Young-Ho Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    IPC分类号： H01L21/20 ,  H01L21/3205 ,  H01L21/4763

    CPC分类号： C08G77/38 ,  H01L28/91

    摘要： A siloxane polymer composition includes an organic solvent in an amount of about 93 percent by weight to about 98 percent by weight, based on a total weight of the siloxane polymer composition, and a siloxane complex in an amount of about 2 percent by weight to about 7 percent by weight, based on the total weight of the siloxane polymer composition, the siloxane complex including a siloxane polymer with an introduced carboxylic acid and being represented by Formula 1 below, wherein each of R1, R2 R3, and R4 independently represents H, OH, CH3, C2H5, C3H7, C4H9 or C5H11, R′ represents CH2, C2H4, C3H6, C4H8, C5H10 or C6H12, and n represents a positive integer so the siloxane polymer of the siloxane complex has a number average molecular weight of about 4,000 to about 5,000.

    摘要翻译： 硅氧烷聚合物组合物包含基于硅氧烷聚合物组合物的总重量为约93重量％至约98重量％的量的有机溶剂和约2重量％至约2重量％的硅氧烷配合物 7重量％，基于硅氧烷聚合物组合物的总重量，硅氧烷配合物包括具有引入的羧酸的硅氧烷聚合物并由下式1表示，其中R1，R2 R3和R4各自独立地表示H， OH，CH3，C2H5，C3H7，C4H9或C5H11，R'表示CH2，C2H4，C3H6，C4H8，C5H10或C6H12，n表示正整数，硅氧烷配合物的硅氧烷聚合物的数均分子量为约4,000 至约5,000。

    METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING PHOTOLITHOGRAPHY
    8.
    发明申请
    METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING PHOTOLITHOGRAPHY 有权
    使用光刻技术制造半导体器件的方法

    公开(公告)号：US20110294072A1

    公开(公告)日：2011-12-01

    申请号：US13117667

    申请日：2011-05-27

    申请人： Mi-Ra PARK ,  Kyoung-Mi Kim ,  Jeong-Ju Park ,  Bo-Hee Lee ,  Jae-Ho Kim ,  Young-Ho Kim

    发明人： Mi-Ra PARK ,  Kyoung-Mi Kim ,  Jeong-Ju Park ,  Bo-Hee Lee ,  Jae-Ho Kim ,  Young-Ho Kim

    IPC分类号： G03F7/20

    CPC分类号： H01L21/0273 ,  G03F7/0035 ,  G03F7/091 ,  G03F7/40

    摘要： A method of manufacturing a semiconductor device using a photolithography process may include forming an anti-reflective layer and a first photoresist film on a lower surface. The first photoresist film may be exposed to light and a first photoresist pattern having a first opening may be formed by developing the first photoresist film. A plasma treatment can be performed on the first photoresist pattern and a second photoresist film may be formed on the first photoresist pattern, which may be exposed to light. A second photoresist pattern may be formed to have a second opening by developing the second photoresist film. Here, the second opening may be substantially narrower than the first opening.

    摘要翻译： 使用光刻工艺制造半导体器件的方法可以包括在下表面上形成抗反射层和第一光致抗蚀剂膜。 可以将第一光致抗蚀剂膜暴露于光，并且可以通过显影第一光致抗蚀剂膜来形成具有第一开口的第一光致抗蚀剂图案。 可以在第一光致抗蚀剂图案上进行等离子体处理，并且可以在可以暴露于光的第一光致抗蚀剂图案上形成第二光致抗蚀剂膜。 可以通过显影第二光致抗蚀剂膜来形成第二光致抗蚀剂图案以具有第二开口。 这里，第二开口可以比第一开口窄得多。