摘要:
A perpendicular magnetic recording head and a method of manufacturing the same are provided. The perpendicular magnetic recording head that includes a main pole, a return yoke, and coils that surround upper and lower parts of the main pole in a solenoid shape so that the main pole generates a magnetic field for recording information onto a recording medium, wherein a portion of the coils that pass above the main pole comprises a plurality of first coils and at least one second coil having a cross-sectional shape different from that of the first coils, and the second coil is formed across upper regions of two first coils adjacent to each other among the first coils.
摘要:
A perpendicular magnetic recording head and a method of manufacturing the same are provided. The perpendicular magnetic recording head that includes a main pole, a return yoke, and coils that surround upper and lower parts of the main pole in a solenoid shape so that the main pole generates a magnetic field for recording information onto a recording medium, wherein a portion of the coils that pass above the main pole comprises a plurality of first coils and at least one second coil having a cross-sectional shape different from that of the first coils, and the second coil is formed across upper regions of two first coils adjacent to each other among the first coils.
摘要:
Provided are a perpendicular magnetic recording head and a method of manufacturing the same. The perpendicular magnetic recording head includes a main pole including a pole tip applying a recording magnetic field to a recording medium, a coil surrounding the main pole in a solenoid shape such that recording magnetic field for recording information to a recording medium is generated at the pole tip, and a return yoke forming a magnetic path for the recording magnetic field together with the main pole and surrounding a portion of the coil passing above the main pole. The number of times that the coil passes above the main pole is smaller than the number of times that the coil passes below the main pole.
摘要:
A two-axis geomagnetic sensor is disclosed. The two-axis geomagnetic sensor includes a first geomagnetic sensor part including a first wafer and a first geomagnetic sensor on a surface of the first wafer; and a second geomagnetic sensor part including a second wafer and a second geomagnetic sensor on a surface of the second wafer. The first and second geomagnetic sensor parts are bonded to each other, in which the first and second geomagnetic sensors positioned in an orthogonal relation to each other. Accordingly, an occupancy area of the geomagnetic sensor can be reduced. Further, the geomagnetic sensor on each axe can have the same magnetic material properties, and alignment deviation cannot be generated.
摘要:
A two-axis geomagnetic sensor is disclosed. The two-axis geomagnetic sensor includes a first geomagnetic sensor part including a first wafer and a first geomagnetic sensor on a surface of the first wafer; and a second geomagnetic sensor part including a second wafer and a second geomagnetic sensor on a surface of the second wafer. The first and second geomagnetic sensor parts are bonded to each other, in which the first and second geomagnetic sensors positioned in an orthogonal relation to each other. Accordingly, an occupancy area of the geomagnetic sensor can be reduced. Further, the geomagnetic sensor on each axe can have the same magnetic material properties, and alignment deviation cannot be generated.
摘要:
A method of fabricating a gallium nitride (GaN) thin layer, by which a high-quality GaN layer may be grown on a large-area substrate using an electrode layer suspended above a substrate, a GaN film structure fabricated using the method, and a semiconductor device including the GaN film structure. The method includes forming a sacrificial layer on a substrate, forming a first buffer layer on the sacrificial layer, forming an electrode layer on the first buffer layer, forming a second buffer layer on the electrode layer, partially etching the sacrificial layer to form at least two support members configured to support the first buffer layer and form at least one air cavity between the substrate and the first buffer layer, and forming a GaN thin layer on the second buffer layer.
摘要:
A coupled resonator filter and a method of fabricating the coupled resonator filter are provided. The method includes: sequentially stacking a first electrode, a first piezoelectric layer, a second electrode, an insulating layer, a third electrode, a second piezoelectric layer, and a fourth electrode on a surface of a substrate; sequentially patterning the first electrode, the first piezoelectric layer, the second electrode, the insulating layer, the third electrode, the second piezoelectric layer, and the fourth electrode to expose areas of the first, second, and third electrodes; forming a plurality of connection electrodes respectively connected to the exposed areas of the first, second, and third electrodes and an area of the fourth electrode; and etching an area of the substrate underneath the first electrode to form an air gap.
摘要:
A terahertz oscillator may include a first insulating layer, an electron emitter on the first insulating layer, adapted to emit an electron beam, and including a cathode, an anode, an oscillating circuit, and a collector sequentially disposed, spaced apart from each other, on the first insulating layer in a direction in which the electron beam is emitted from the electron emitter, wherein the oscillating circuit converts energy of the electron beam to energy of an electromagnetic wave, and wherein the collector collects the electron beam, an output unit adapted to emit the electromagnetic wave from the oscillating circuit to outside of the terahertz oscillator, and an electron emitting material layer. The cathode may include a first curved portion that extends in a direction perpendicular to the first insulating layer. The electron emitting material layer may be on an inner surface of the first curved portion of the cathode.
摘要:
An inductor integrated chip and fabrication method thereof is provided. The inductor integrated chip includes a wafer; an inductor bonded on a surface of the wafer; a circuit element formed on the surface of the wafer and coupled to a first end of the inductor; a packaging wafer connected to the surface of the wafer and packaging the inductor and the circuit element; and a connecting electrode formed on the packaging wafer and connected to a second end of the inductor. The method includes forming an inductor and a circuit element on a surface of a wafer, wherein the circuit element is coupled to a first end of the inductor; forming a connecting electrode on a packaging wafer; and packaging the inductor and the circuit element by joining the wafer and the packaging wafer so as to connect the connecting electrode with a second end of the inductor.
摘要:
Graphene semiconductor device, a method of manufacturing a graphene semiconductor device, an organic light emitting display and a memory, include forming a multilayered member including a sacrificial substrate, a sacrificial layer, and a semiconductor layer deposited in sequence, forming a transfer substrate on the semiconductor layer, forming a first laminate including the transfer substrate and the semiconductor layer by removing the sacrificial layer to separate the sacrificial substrate from the semiconductor layer, forming a second laminate by forming a graphene layer on a base substrate, combining the first laminate and the second laminate such that the semiconductor layer contacts the graphene layer, and removing the transfer substrate.