-
公开(公告)号：US09082933B2
公开(公告)日：2015-07-14
申请号：US13881252
申请日：2010-12-09
申请人： Kyu Ho Lee , Dae Woong Suh , Jae Ryang Choi , Chang Hoon Kim
发明人： Kyu Ho Lee , Dae Woong Suh , Jae Ryang Choi , Chang Hoon Kim
CPC分类号： H01L33/62 , H01L24/17 , H01L33/0075 , H01L33/06 , H01L33/32 , H01L33/36 , H01L33/38 , H01L33/40 , H01L33/46 , H01L2924/01029 , H01L2924/12036 , H01L2924/12041 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
摘要： The present invention is directed to a light emitting diode (LED) assembly and a method for fabricating the same. According to the present invention, there is provided an LED assembly comprising an LED comprising at least an N-type semiconductor layer and a P-type semiconductor layer; and bumps provided on the LED and electrically connected to the semiconductor layers, wherein the bump comprises a first region made of a gold (Au) compound including tin (Sn) and a second region made of gold.
摘要翻译： 本发明涉及发光二极管（LED）组件及其制造方法。 根据本发明，提供一种LED组件，其包括至少包括N型半导体层和P型半导体层的LED; 和设置在LED上并电连接到半导体层的凸块，其中凸块包括由包含锡（Sn）的金（Au）化合物和由金制成的第二区域制成的第一区域。
-
公开(公告)号：US20130221372A1
公开(公告)日：2013-08-29
申请号：US13881252
申请日：2010-12-09
申请人： Kyu Ho Lee , Dae Woong Suh , Jae Ryang Choi , Chang Hoon Kim
发明人： Kyu Ho Lee , Dae Woong Suh , Jae Ryang Choi , Chang Hoon Kim
IPC分类号： H01L33/36
CPC分类号： H01L33/62 , H01L24/17 , H01L33/0075 , H01L33/06 , H01L33/32 , H01L33/36 , H01L33/38 , H01L33/40 , H01L33/46 , H01L2924/01029 , H01L2924/12036 , H01L2924/12041 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
摘要： The present invention is directed to a light emitting diode (LED) assembly and a method for fabricating the same. According to the present invention, there is provided an LED assembly comprising an LED comprising at least an N-type semiconductor layer and a P-type semiconductor layer; and bumps provided on the LED and electrically connected to the semiconductor layers, wherein the bump comprises a first region made of a gold (Au) compound including tin (Sn) and a second region made of gold.
摘要翻译： 本发明涉及发光二极管（LED）组件及其制造方法。 根据本发明，提供一种LED组件，其包括至少包括N型半导体层和P型半导体层的LED; 和设置在LED上并电连接到半导体层的凸块，其中凸块包括由包含锡（Sn）的金（Au）化合物和由金制成的第二区域制成的第一区域。
-
公开(公告)号：US10074778B2
公开(公告)日：2018-09-11
申请号：US13425156
申请日：2012-03-20
申请人： Chi Hyun In , Jun Yong Park , Kyu Ho Lee , Dae Woong Suh , Jong Hyeon Chae , Chang Hoon Kim , Sung Hyun Lee
发明人： Chi Hyun In , Jun Yong Park , Kyu Ho Lee , Dae Woong Suh , Jong Hyeon Chae , Chang Hoon Kim , Sung Hyun Lee
CPC分类号： H01L33/486 , H01L33/20 , H01L33/44 , H01L33/505 , H01L33/62 , H01L2224/16 , H01L2933/0033
摘要： Disclosed herein are a light emitting diode package and a method of manufacturing the same. The light emitting diode package includes: a substrate, a light-emitting layer disposed on a surface of the substrate and including a first type semiconductor layer, an active layer, and a second type semiconductor layer, a first bump disposed on the first type semiconductor layer and a second bump disposed the second type semiconductor layer, a protective layer covering at least the light-emitting layer, and a first bump pad and a second bump pad disposed on the protective layer and connected to the first bump and the second bump, respectively.
-
公开(公告)号：US20130026518A1
公开(公告)日：2013-01-31
申请号：US13359287
申请日：2012-01-26
申请人： Dae Woong Suh , Chung Hoon Lee
发明人： Dae Woong Suh , Chung Hoon Lee
CPC分类号： H01L33/44 , H01L33/0095 , H01L33/20 , H01L33/22 , H01L33/486 , H01L33/50 , H01L33/507 , H01L33/56 , H01L33/62 , H01L2924/0002 , H01L2933/0041 , H01L2933/0066 , H01L2924/00
摘要： Disclosed are a wafer level LED package and a method of fabricating the same. The method of fabricating a wafer level LED package includes: forming a plurality of semiconductor stacks on a first substrate, each of the semiconductor stacks comprising a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active region disposed between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer; preparing a second substrate comprising first lead electrodes and second lead electrodes arranged corresponding to the plurality of semiconductor stacks; bonding the plurality of semiconductor stacks to the second substrate; and cutting the first substrate and the second substrate into a plurality of packages after the bonding is completed. Accordingly, the wafer level LED package is provided.
摘要翻译： 公开了晶圆级LED封装及其制造方法。 制造晶片级LED封装的方法包括：在第一衬底上形成多个半导体堆叠，每个半导体堆叠包括第一导电型半导体层，第二导电型半导体层和有源区 设置在第一导电型半导体层和第二导电型半导体层之间; 制备第二衬底，其包括对应于所述多个半导体堆叠布置的第一引线电极和第二引线电极; 将所述多个半导体堆叠接合到所述第二基板; 以及在所述接合完成之后将所述第一基板和所述第二基板切割成多个封装。 因此，提供了晶片级LED封装。
-
公开(公告)号：US08592232B2
公开(公告)日：2013-11-26
申请号：US13359287
申请日：2012-01-26
申请人： Dae Woong Suh , Chung Hoon Lee
发明人： Dae Woong Suh , Chung Hoon Lee
IPC分类号： H01L33/44
CPC分类号： H01L33/44 , H01L33/0095 , H01L33/20 , H01L33/22 , H01L33/486 , H01L33/50 , H01L33/507 , H01L33/56 , H01L33/62 , H01L2924/0002 , H01L2933/0041 , H01L2933/0066 , H01L2924/00
摘要： Disclosed are a wafer level LED package and a method of fabricating the same. The method of fabricating a wafer level LED package includes: forming a plurality of semiconductor stacks on a first substrate, each of the semiconductor stacks comprising a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active region disposed between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer; preparing a second substrate comprising first lead electrodes and second lead electrodes arranged corresponding to the plurality of semiconductor stacks; bonding the plurality of semiconductor stacks to the second substrate; and cutting the first substrate and the second substrate into a plurality of packages after the bonding is completed. Accordingly, the wafer level LED package is provided.
摘要翻译： 公开了晶圆级LED封装及其制造方法。 制造晶片级LED封装的方法包括：在第一衬底上形成多个半导体堆叠，每个半导体堆叠包括第一导电型半导体层，第二导电型半导体层和有源区 设置在第一导电型半导体层和第二导电型半导体层之间; 制备第二衬底，其包括对应于所述多个半导体堆叠布置的第一引线电极和第二引线电极; 将所述多个半导体堆叠接合到所述第二基板; 以及在所述接合完成之后将所述第一基板和所述第二基板切割成多个封装。 因此，提供了晶片级LED封装。
-
-
-
-
搜索结果
5 条记录 (耗时 0.027 秒)
