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23 条记录 (耗时 0.014 秒)

    Light-emitting diode package and manufacturing method thereof
    1.
    发明授权
    Light-emitting diode package and manufacturing method thereof 有权
    发光二极管封装及其制造方法

    公开(公告)号：US07745844B2

    公开(公告)日：2010-06-29

    申请号：US11910174

    申请日：2007-02-28

    申请人： Kyung Ho Shin

    发明人： Kyung Ho Shin

    IPC分类号： H01L31/12

    CPC分类号： H01L33/642 ,  H01L33/486 ,  H01L33/60 ,  H01L33/64 ,  H01L33/644 ,  H01L2224/48091 ,  H01L2924/00014

    摘要： An LED package is provided. The LED package comprises a metal plate, circuit patterns, and an LED. The metal plate comprises grooves. The insulating layer is formed on the metal plate. The circuit patterns are formed on the insulating layer. The LED is electrically connected with the circuit pattern on the insulating layer.

    摘要翻译： 提供LED封装。 LED封装包括金属板，电路图案和LED。 金属板包括凹槽。 绝缘层形成在金属板上。 电路图案形成在绝缘层上。 LED与绝缘层上的电路图形电连接。

    Light-Emitting Diode Package and Manufacturing Method Thereof
    2.
    发明申请
    Light-Emitting Diode Package and Manufacturing Method Thereof 有权
    发光二极管封装及其制造方法

    公开(公告)号：US20080179612A1

    公开(公告)日：2008-07-31

    申请号：US11910174

    申请日：2007-02-28

    申请人： Kyung Ho Shin

    发明人： Kyung Ho Shin

    IPC分类号： H01L33/00 ,  H01L21/02

    CPC分类号： H01L33/642 ,  H01L33/486 ,  H01L33/60 ,  H01L33/64 ,  H01L33/644 ,  H01L2224/48091 ,  H01L2924/00014

    摘要： An LED package is provided. The LED package comprises a metal plate, circuit patterns, and an LED. The metal plate comprises grooves. The insulating layer is formed on the metal plate. The circuit patterns are formed on the insulating layer. The LED is electrically connected with the circuit pattern on the insulating layer.

    摘要翻译： 提供LED封装。 LED封装包括金属板，电路图案和LED。 金属板包括凹槽。 绝缘层形成在金属板上。 电路图案形成在绝缘层上。 LED与绝缘层上的电路图形电连接。

    Light emitting module and display device having the same
    3.
    发明授权
    Light emitting module and display device having the same 有权
    发光模块和具有该发光模块的显示装置

    公开(公告)号：US08944667B2

    公开(公告)日：2015-02-03

    申请号：US12700021

    申请日：2010-02-04

    申请人： Kyung Ho Shin

    发明人： Kyung Ho Shin

    IPC分类号： F21V15/01 ,  F21V8/00

    CPC分类号： G02B6/0091

    摘要： A light emitting module and a display device including the light emitting module are provided. The light emitting module may include a metal plate, a board, and a plurality of light emitting diodes. The board may be attached to a side surface of the metal plate, and light emitting diodes may be arranged on the board.

    摘要翻译： 提供了一种发光模块和包括发光模块的显示装置。 发光模块可以包括金属板，板和多个发光二极管。 板可以附接到金属板的侧表面，并且发光二极管可以布置在板上。

    Magnetic tunnel junction structure having free layer with oblique magnetization
    5.
    发明授权
    Magnetic tunnel junction structure having free layer with oblique magnetization 有权
    磁隧道结结构具有倾斜磁化的自由层

    公开(公告)号：US08338004B2

    公开(公告)日：2012-12-25

    申请号：US12608103

    申请日：2009-10-29

    申请人： Kyung Ho Shin ,  Byoung Chul Min

    发明人： Kyung Ho Shin ,  Byoung Chul Min

    IPC分类号： G11B5/39 ,  H01F10/32 ,  G11C11/02

    CPC分类号： H01F10/3254 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3277 ,  H01F10/3286 ,  H01L43/08 ,  H03B15/006 ,  Y10T428/1114 ,  Y10T428/1143

    摘要： The present invention provides a magnetic tunnel junction structure, including a first magnetic layer having a fixed magnetization direction and a second magnetic layer having a reversible magnetization direction. A non-magnetic layer is formed between the first magnetic layer and the second magnetic layer and a third magnetic layer allows the magnetization direction of the second magnetic layer to be inclined with respect to a plane of the second magnetic layer by a magnetic coupling to the second magnetic layer with a vertical magnetic anisotropic energy thereof larger than a horizontal magnetic anisotropic energy thereof. A crystal-structure separation layer is formed between the second magnetic layer and the third magnetic layer for separating a crystal orientation between the second and the third magnetic layers.

    摘要翻译： 本发明提供一种磁性隧道结结构，其包括具有固定磁化方向的第一磁性层和具有可逆磁化方向的第二磁性层。 在第一磁性层和第二磁性层之间形成非磁性层，第三磁性层允许第二磁性层的磁化方向相对于第二磁性层的平面通过磁耦合 第二磁性层，其垂直磁性各向异性能量大于其水平磁各向异性能。 在第二磁性层和第三磁性层之间形成晶体结构分离层，用于分离第二和第三磁性层之间的晶体取向。

    Light-emitting diode package and manufacturing method thereof
    6.
    发明授权
    Light-emitting diode package and manufacturing method thereof 有权
    发光二极管封装及其制造方法

    公开(公告)号：US08212274B2

    公开(公告)日：2012-07-03

    申请号：US12788090

    申请日：2010-05-26

    申请人： Kyung Ho Shin

    发明人： Kyung Ho Shin

    IPC分类号： H01L33/00

    CPC分类号： H01L33/642 ,  H01L33/486 ,  H01L33/60 ,  H01L33/64 ,  H01L33/644 ,  H01L2224/48091 ,  H01L2924/00014

    摘要： An LED package is provided. The LED package comprises a metal plate, circuit patterns, and an LED. The metal plate comprises grooves. The insulating layer is formed on the metal plate. The circuit patterns are formed on the insulating layer. The LED is electrically connected with the circuit pattern on the insulating layer.

    摘要翻译： 提供LED封装。 LED封装包括金属板，电路图案和LED。 金属板包括凹槽。 绝缘层形成在金属板上。 电路图案形成在绝缘层上。 LED与绝缘层上的电路图形电连接。

    InSb-based switching device
    8.
    发明授权
    InSb-based switching device 有权
    基于InSb的交换设备

    公开(公告)号：US08237236B2

    公开(公告)日：2012-08-07

    申请号：US12762839

    申请日：2010-04-19

    申请人： Jin Dong Song ,  Sung Jung Joo ,  Jin Ki Hong ,  Sang Hoon Shin ,  Kyung Ho Shin ,  Tae Yueb Kim ,  Ju Young Lim ,  Jin Seo Lee ,  Kung Won Rhie

    发明人： Jin Dong Song ,  Sung Jung Joo ,  Jin Ki Hong ,  Sang Hoon Shin ,  Kyung Ho Shin ,  Tae Yueb Kim ,  Ju Young Lim ,  Jin Seo Lee ,  Kung Won Rhie

    IPC分类号： H01L29/82

    CPC分类号： H01L29/82

    摘要： An InSb-based switching device, which operates at room temperature by using a magnetic field controlled avalanche process for applying to magneto-logic elements, is provided. A switching device of one embodiment includes a p-type semiconductor layer; an n-type semiconductor layer; and contact layers disposed on one of the p-type and n-type semiconductor layers, the p-type semiconductor layer being in contact with the n-type semiconductor layer such that a current can be applied through the contact layers to the p-type and n-type semiconductor layers to cause a current flow from one of the contact layers to the p-type and n-type semiconductor layers and from the p-type and n-type semiconductor layers to the other of the contact layers, whereby the current flow can be controlled by an intensity of a magnetic field applied to the p-type and n-type semiconductor layers substantially perpendicularly thereto.

    摘要翻译： 提供了一种基于InSb的开关装置，其通过使用用于应用于磁逻辑元件的磁场控制雪崩处理在室温下操作。 一个实施例的开关器件包括p型半导体层; n型半导体层; 以及设置在p型和n型半导体层中的一个上的接触层，p型半导体层与n型半导体层接触，使得可以通过接触层将电流施加到p型 和n型半导体层，以使电流从一个接触层流向p型和n型半导体层，并从p型和n型半导体层到另一个接触层，由此， 可以通过施加到基本垂直于其的p型和n型半导体层的磁场的强度来控制电流。

    InSb-BASED SWITCHING DEVICE
    9.
    发明申请
    InSb-BASED SWITCHING DEVICE 有权
    基于InSb的切换设备

    公开(公告)号：US20100308378A1

    公开(公告)日：2010-12-09

    申请号：US12762839

    申请日：2010-04-19

    申请人： Jin Dong Song ,  Sung Jung Joo ,  Jin Ki Hong ,  Sang Hoon Shin ,  Kyung Ho Shin ,  Tae Yueb Kim ,  Ju Young Lim ,  Jin Seo Lee ,  Kung Won Rhie

    发明人： Jin Dong Song ,  Sung Jung Joo ,  Jin Ki Hong ,  Sang Hoon Shin ,  Kyung Ho Shin ,  Tae Yueb Kim ,  Ju Young Lim ,  Jin Seo Lee ,  Kung Won Rhie

    IPC分类号： H01L29/82

    CPC分类号： H01L29/82

    摘要： The present invention provides an InSb-based switching device operating at room temperature by using a magnetic field controlled avalanche process for applying to magneto-logic elements. A switching device of one embodiment includes a p-type semiconductor layer; an n-type semiconductor layer; and contact layers disposed on one of the p-type and n-type semiconductor layers, the p-type semiconductor layer being in contact with the n-type semiconductor layer such that a current can be applied through the contact layers to the p-type and n-type semiconductor layers to cause a current flow from one of the contact layers to the p-type and n-type semiconductor layers and from the p-type and n-type semiconductor layers to the other of the contact layers, whereby the current flow can be controlled by an intensity of a magnetic field applied to the p-type and n-type semiconductor layers substantially perpendicularly thereto.

    摘要翻译： 本发明提供一种基于InSb的开关装置，其通过使用用于施加到磁逻辑元件的磁场控制雪崩处理在室温下工作。 一个实施例的开关器件包括p型半导体层; n型半导体层; 以及设置在p型和n型半导体层中的一个上的接触层，p型半导体层与n型半导体层接触，使得可以通过接触层将电流施加到p型 和n型半导体层，以使电流从一个接触层流向p型和n型半导体层，并从p型和n型半导体层到另一个接触层，由此， 可以通过施加到基本垂直于其的p型和n型半导体层的磁场的强度来控制电流。

    Flash Apparatus and Portable Terminal Having the Same
    10.
    发明申请
    Flash Apparatus and Portable Terminal Having the Same 审中-公开
    闪存设备和具有相同功能的便携式终端

    公开(公告)号：US20080260372A1

    公开(公告)日：2008-10-23

    申请号：US12067034

    申请日：2007-09-06

    申请人： Kyung Ho Shin

    发明人： Kyung Ho Shin

    IPC分类号： G03B15/03 ,  G03B15/02

    CPC分类号： G03B15/05 ,  G03B2215/05 ,  H04N1/00307 ,  H04N5/2256

    摘要： Provided are a flash apparatus and a portable terminal having the same. The flash apparatus includes a main body, a light emitting diode, a lens, a lens housing, and a lens transfer part. The main body has an opening part, and the light emitting diode is disposed in the opening part. The lens is disposed on a light emitting path of the light emitting diode. The lens housing is disposed in the inside of the opening part to fix the lens, and the lens transfer part moves the lens housing in one of an upper direction and a lower direction.

    摘要翻译： 提供了一种闪存装置和具有该装置的便携式终端。 闪光装置包括主体，发光二极管，透镜，透镜壳体和透镜传送部。 主体具有开口部，发光二极管配置在开口部。 透镜设置在发光二极管的发光路径上。 透镜壳体设置在开口部分的内部以固定透镜，并且透镜传送部件使透镜壳体沿上下方向中的一个移动。