摘要:
A delay locked loop circuit for compensating for a phase skew of a memory device includes a first delay locking unit configured to delay an external clock of the memory device by a first amount of delay to output a first internal clock, a second locking unit configured to delay the external clock by a second amount of delay to output a second internal clock, the second amount of delay being greater than the first amount of delay, and a selecting unit configured to select one of the first internal clock and the second internal clock as an internal clock of the memory device.
摘要:
A phase locked loop that generates an internal clock by controlling a delay time of a delay cell according to conditions of PVT, thereby improving a jitter characteristic of the internal clock. The delay cell includes a first current controller for controlling first and second currents in response to a control voltage, and a second current controller for controlling the first and second currents in response to frequency range selection signals. The phase locked loop includes a phase comparator for comparing a reference clock with a feedback clock, a control voltage generator for generating a control voltage corresponding to an output of the phase comparator, and a voltage controlled oscillator for generating an internal clock having a frequency in response to the control voltage and one or more frequency range control signals, wherein the feedback clock is generated using the internal clock.
摘要:
A latency control circuit includes a delay unit configured to delay an input signal for a delay corresponding to a phase difference between an external clock and an internal clock and generate a delayed input signal, a delay information generation unit configured to generate a delay information based on a latency information and a delay amount of the input signal caused by a chip including the latency control circuit, a shift unit configured to shift the delayed input signal for a time period corresponding to the delay information in synchronism with the internal clock and an asynchronous control unit configured to selectively control the shift unit to output the delayed input signal without performing a shift operation.
摘要:
A delay locked loop increases an operation margin of a delay locked loop by using an output clock having more advanced phase than a DLL output clock. A clock delay compensation block receives an external clock signal to thereby generate a first multi clock and a second multi clock. A phase control block compares the first multi clock with the second multi clock to generate phase control signal controlling a shifting operation. A multi-phase delay control block performs a shifting operation based on the phase control signal to control the clock delay compensation block.
摘要:
An integrated circuit includes a variable resistance unit including at least one transistor that receives a control signal and changes a resistance through the transistor in response to the control signal in a programming operation mode and an information detection unit configured to detect programming information in response to an output voltage of the variable resistance unit in a normal operation mode.
摘要:
Provided are a system and a method for exposing an advertisement based on a keyword in real time. The system may include an inventory determining unit to determine an inventory for each target keyword using a search log based on a keyword of a user, and an advertisement registering unit to register an advertisement into an inventory corresponding to a target keyword selected by an advertiser. The system may expose an advertisement while precisely reflecting a subject of interest of the user, thereby improving an advertising effect.
摘要:
A semiconductor memory device includes a thermosensor that senses present temperatures of the device and confirms whether the temperature values are valid. The thermosensor includes a temperature sensing unit, a storage unit and an initializing unit. The temperature sensing unit senses temperatures in response to a driving signal. The storage unit stores output signals of the temperature sensing unit and outputs temperature values. The initializing unit initializes the storage unit after a predetermined time from an activation of the driving signal. A driving method includes driving the thermosensor in response to the driving signal, requesting a re-driving after a predetermined time from the activation of the driving signal, and re-driving the thermosensor in response to the driving signal input again.
摘要:
There is provided an on-chip test circuit that is capable of measuring validity of an output signal within a chip without any external measuring device. The on-chip self test circuit implemented on the same chip as a test semiconductor device includes: a test load block for receiving a test target signal; and a self test block for receiving a test target signal passing through the test load block and a test target signal inputted to an output driver together, and determining whether a change of the test target signal is within an allowable range. Accordingly, the validity of the signal outputted from the device can be measured without any expensive external measuring device. Also, when the test must be done before the packaging stage, the test can be simply performed, thereby reducing the test cost greatly.
摘要:
A display apparatus includes a first pixel, a second pixel, a first selector, and a second selector. The first pixel includes first sub-pixels connected to a first gate line and respectively connected to corresponding data lines included in a first data line group and the second pixel includes second sub-pixels connected to a second gate line adjacent to the first gate line and respectively connected to corresponding data lines, one of which is included in a second data line group different from the first data line group. The first selector applies first data signals to one of odd-numbered data lines, and the second selector applies second data signals having a different polarity from the second data signals to one of even-numbered data lines.
摘要:
A semiconductor memory device capable of measuring a temperature without the influence of noise includes a temperature sensing device for sensing a current temperature in response to a control signal, wherein the semiconductor memory device enters a power save mode for a predetermined time starting from an activation of the control signal and wherein the power save mode has substantially no power consumption. A method for driving a semiconductor memory device in accordance with the present invention includes sensing a current temperature in response to a control signal and entering a power save mode for a predetermined time starting from an activation of the control signal, wherein the power save mode has substantially no power consumption.