摘要:
A megasonic cleaner includes a rotatable wafer supporting member for supporting a wafer; a cleaning solution supply member for supplying a cleaning solution to a wafer placed on the wafer supporting member; at least two vibration transfer members for agitating cleaning solutions supplied to different areas of the wafer placed on the wafer supporting member; and a vibration generating member for oscillating the at least two vibration transfer members. The cleaner has at least two quartz rods for transferring oscillation energy. Using the quartz rods, oscillation energy is transferred to respective areas of a wafer to clean the wafer. Thus, a difference between cleaning efficiencies of wafer edge and center is reduced or substantially eliminated to achieve a uniform cleaning efficiency on an entire surface of the wafer.
摘要:
A dry cleaning apparatus for cleaning a surface of a semiconductor substrate comprises a chamber comprising a first wall and a second wall, a supporting member including a wafer receiving surface, a cleaning member for removing particles from the surface of the substrate placed on the supporting member, and a carrier gas supplying member for supplying a carrier gas and for transporting the particles separated from the surface of the substrate to the outside of the chamber, wherein the first wall of the chamber including a first portion disposed to face the wafer receiving surface and a second portion formed adjacent to the first portion and disposed to receive a part of the carrier gas supplying member.
摘要:
Disclosed are an amine aqueous solution for forming an active layer of a polyamide reverse osmosis composite membrane and a preparation method of the polyamide reverse osmosis composite membrane using the same. The amine aqueous solution comprises 0.1 to 20 wt % of a polyfunctional amine compound, 0.1 to 20 wt % of an alcohol amine compound, 0.1 to 20 wt % of a tertiary amine compound, and 40 to 99.7 wt % of water. Due to using an amine aqueous solution having an alcohol amine and a tertiary amine compound, the polyamide reverse osmosis composite membrane has high water permeability and enhanced salt rejection rate, and thus is useful for the membrane field.
摘要:
A preparation method of a polyamide thin film composite reverse osmosis membrane and a polyamide thin film composite reverse osmosis membrane prepared using the preparation method are provided. The preparation method of a polyamide thin film composite reverse osmosis membrane using interfacial polymerization of an amine aqueous solution and amine-reactive compound includes the steps of (a) forming an active layer through interfacial polymerization by contacting a surface of a porous support with an amine aqueous solution containing a polyfunctional aromatic amine monomer and an organic solution containing polyfunctional acyl halide monomer as an amine-reactive compound, and (b) performing post-treatment preceded by the forming of the active layer by contacting the active layer with an aqueous solution containing 0.1 to 100 wt % of polyfunctional tertiary alcohol amine. The polyamide thin film composite reverse osmosis membrane prepared by using the polyfunctional tertiary alcohol amine as a post-treatment compound has improved water permeability and salt rejection compared to a case of using various post-treatment agents or methods.
摘要:
Disclosed herein is a spiral wound type filter cartridge and more specifically, a spiral wound type filter cartridge in which activated carbon fiber is provided. The inside of spiral wound type filter cartridge is capable of serving as a carbon filter in a water purifier, thus eliminating the necessity of the use of any carbon filter for pre- or post-treatment in the process of purifying raw water, reducing an overall size of the water purifier and considerably reducing costs associated therewith.
摘要:
An amine aqueous solution for forming an active layer of a polyamide reverse osmosis composite membrane is prepared, which consists of 0.1 through 20 weight % of polyfunctional aromatic amine monomer, 0.1 through 20 weight % of multi-functional tertiary alcohol amine, 0.1 through 20 weight % of strong acid, and 40 through 99.7 weight % of water.
摘要:
An apparatus and method for manufacturing semiconductor devices are disclosed. In accordance with the invention, a wafer transfer device for transferring wafers from wafer storage containers to wafer processing equipment includes a flow chamber designed to reduce the amount of contaminants that can enter the wafer container. The wafer transfer apparatus provide two gas inlets for allowing two gases to flow through the flow chamber of the transfer apparatus. This results in a reduced amount of contaminants able to enter the wafer container, which in turn results in manufacture of devices with more reliable performance characteristics as well as high manufacturing yield.
摘要:
An apparatus and method for manufacturing semiconductor devices are disclosed. In accordance with the invention, a wafer transfer device for transferring wafers from wafer storage containers to wafer processing equipment includes a flow chamber designed to reduce the amount of contaminants that can enter the wafer container. The wafer transfer apparatus provide two gas inlets for allowing two gases to flow through the flow chamber of the transfer apparatus. This results in a reduced amount of contaminants able to enter the wafer container, which in turn results in manufacture of devices with more reliable performance characteristics as well as high manufacturing yield.
摘要:
A method of manufacturing an electronic device, which can obtain sufficient manufacturing margins and reduce a defect rate by compensating for a threshold voltage variation caused by the variation of a critical dimension (CD) of a gate electrode. An ion implanter controller and an ion implantation system perform the method. In the method, an ion implantation recipe for forming a junction contact plug of a transistor formed on the wafer is adjusted based on the measured CD. Then, ions are implanted into the wafer by using the adjusted ion implantation recipe. All defects that may occur in the transistor during previous manufacturing steps can be repaired after the transistor is formed, thus enhancing manufacturing margins
摘要:
A facility for manufacturing a semiconductor device is provided. The facility includes a process room for performing a predetermined process on a wafer, and a stocker for keeping a FOUP receiving the wafers on which the process has been completely performed. The FOUP is filled with nitrogen gas and stored in the stocker. A sealing member is fixed on a pedestal in the stocker so as to close the hole penetrating the FOUP placed on the pedestal.