公开(公告)号：US06733923B2

公开(公告)日：2004-05-11

申请号：US09934648

申请日：2001-08-23

申请人： Kyung-Suk Yun ,  Byung-Won Cho ,  Won-Il Cho ,  Hyung-Sun Kim ,  Un-Seok Kim ,  Sang-Cheol Nam ,  Seung-Won Lee ,  Young-Soo Yoon

发明人： Kyung-Suk Yun ,  Byung-Won Cho ,  Won-Il Cho ,  Hyung-Sun Kim ,  Un-Seok Kim ,  Sang-Cheol Nam ,  Seung-Won Lee ,  Young-Soo Yoon

IPC分类号： H01M458

CPC分类号： H01M4/0421 ,  H01M4/0402 ,  H01M4/0426 ,  H01M4/131 ,  H01M4/1391 ,  H01M4/483 ,  H01M4/505 ,  H01M4/525 ,  H01M10/0525 ,  H01M2004/028 ,  Y10T29/49108 ,  Y10T29/49115

摘要： A metal oxide electrode coated with a porous metal film, a metal oxide film or a carbon film, its fabrication method and a lithium-ion secondary battery using it are disclosed. The porous thin film of Li, Al, Sn, Bi, Si, Sb, Ni, Cu, Ti, V, Cr, Mn, Fe, Co, Zn, Mo, W, Ag, Au, Pt, Ir, Ru, carbon or their alloys are coated to a few Řa few &mgr;m, so as to remarkably improve the capacity of a battery, high rate charging and discharging characteristics and a durability characteristic. The method can be applied to a fabrication of every secondary battery.

摘要翻译： 公开了涂覆有多孔金属膜，金属氧化物膜或碳膜的金属氧化物电极，其制造方法和使用它的锂离子二次电池。 Li，Al，Sn，Bi，Si，Sb，Ni，Cu，Ti，V，Cr，Mn，Fe，Co，Zn，Mo，W，Ag，Au，Pt，Ir，Ru，碳的多孔薄膜 或者它们的合金被涂覆到几个几毫米，以便显着地提高电池的容量，高的充电和放电特性以及耐久性特性。 该方法可以应用于每个二次电池的制造。

公开(公告)号：US08493813B2

公开(公告)日：2013-07-23

申请号：US13238816

申请日：2011-09-21

申请人： Seung-Won Lee

发明人： Seung-Won Lee

IPC分类号： G11C8/08

CPC分类号： G11C8/10 ,  G11C8/08 ,  G11C16/08

摘要： A row decoder circuit includes a decoding unit and first and second wordline driving units. The decoding unit generates a first driving signal and a second driving signal based on a selection signal and wordline voltages. A voltage level of the first driving signal and a voltage level of the second driving signal depend on an operation mode. The first wordline driving unit is connected to a first wordline and outputs one of the first driving signal and the second driving signal as a first wordline driving signal based on first driving control signals. The second wordline driving unit is connected to a second wordline and outputs one of the first driving signal and the second driving signal as a second wordline driving signal based on second driving control signals.

摘要翻译： 行解码器电路包括解码单元和第一和第二字线驱动单元。 解码单元基于选择信号和字线电压产生第一驱动信号和第二驱动信号。 第一驱动信号的电压电平和第二驱动信号的电压电平取决于操作模式。 第一字线驱动单元连接到第一字线，并且基于第一驱动控制信号，将第一驱动信号和第二驱动信号之一作为第一字线驱动信号输出。 第二字线驱动单元连接到第二字线，并且基于第二驱动控制信号输出第一驱动信号和第二驱动信号中的一个作为第二字线驱动信号。

公开(公告)号：US20130170126A1

公开(公告)日：2013-07-04

申请号：US13681679

申请日：2012-11-20

申请人： Seung-Won Lee

发明人： Seung-Won Lee

IPC分类号： H05K7/02 ,  G06F1/16

CPC分类号： G06F1/1654 ,  G06F1/1601 ,  G06F1/1618 ,  G06F1/1626 ,  G06F1/1632 ,  G06F1/1669 ,  G06F1/1675 ,  G06F1/1681 ,  G06F1/1683 ,  G06F3/0202 ,  H04M1/0254 ,  H04M1/04 ,  H04M1/23 ,  H05K7/02

摘要： A mobile apparatus includes a first body, a second body, a rotary adaptor including an accommodation portion to accommodate the second body, rotatably installed on the first body, and to move the second body to a position where the second body is stacked on the first body and a position where the second body is unfolded, first magnets disposed on the accommodation portion, and second magnets disposed on the second body so as to face the first magnets and having different polarity from the first magnets.

摘要翻译： 移动装置包括第一主体，第二主体，旋转适配器，其包括容纳第二主体的容纳部，可旋转地安装在第一主体上，并且将第二主体移动到第二主体在第一主体上堆叠的位置 主体和第二主体展开的位置，设置在容纳部分上的第一磁体和设置在第二主体上以与第一磁体相对并且具有与第一磁体不同的极性的第二磁体。

公开(公告)号：US07970982B2

公开(公告)日：2011-06-28

申请号：US11761620

申请日：2007-06-12

申请人： Ki-Hong Kim ,  Byeong-Hoon Lee ,  Seung-Won Lee ,  Sun-Kwon Kim

发明人： Ki-Hong Kim ,  Byeong-Hoon Lee ,  Seung-Won Lee ,  Sun-Kwon Kim

IPC分类号： G06F12/02

CPC分类号： G11C16/20

摘要： A memory card includes: a first memory chip responding to all commands input externally; and a second memory chip responding to commands, among the commands input externally, relevant to reading, programming, and erasing operations with data. Card identification information stored in the first memory chip includes capacity information corresponding to a sum of sizes of the first and second memory chips. The plurality of memory chips of the memory card are useful in designing the memory card with storage capacity in various forms.

摘要翻译： 存储卡包括：响应于外部输入的所有命令的第一存储器芯片; 以及响应命令的第二存储器芯片，在外部输入的命令中与数据的读取，编程和擦除操作相关。 存储在第一存储器芯片中的卡识别信息包括对应于第一和第二存储器芯片的尺寸之和的容量信息。 存储卡的多个存储芯片可用于以各种形式设计具有存储容量的存储卡。

公开(公告)号：US07750611B2

公开(公告)日：2010-07-06

申请号：US11951594

申请日：2007-12-06

申请人： Seung-Won Lee

发明人： Seung-Won Lee

IPC分类号： G05F1/563 ,  G05F1/565

CPC分类号： G05F1/56

摘要： A voltage controller may include a pulse generator and an internal voltage control circuit coupled to the pulse generator. The pulse generator may be configured to generate a control signal in response to at least one of a mode signal and/or an external voltage. The internal voltage control circuit may be configured to generate an internal voltage at an internal voltage node, and the internal voltage control circuit may include a voltage divider, first and second comparators, and a driver. The voltage divider may be coupled between the internal voltage node and a first reference voltage, and the voltage divider may generate a feedback voltage that is between the internal voltage and the first reference voltage. The first comparator may be configured to generate a first comparison result responsive to comparing the feedback voltage with a second reference voltage, and the second comparator may be configured to generate a second comparison result responsive to comparing the feedback voltage with the second reference voltage in response to the control signal. The driver may be coupled between an external voltage and the internal voltage node, and the driver may be configured to generate the internal voltage responsive to the first and second comparison results. Related methods and smart cards are also discussed.

摘要翻译： 电压控制器可以包括脉冲发生器和耦合到脉冲发生器的内部电压控制电路。 脉冲发生器可以被配置为响应于模式信号和/或外部电压中的至少一个而产生控制信号。 内部电压控制电路可以被配置为在内部电压节点处产生内部电压，并且内部电压控制电路可以包括分压器，第一和第二比较器以及驱动器。 分压器可以耦合在内部电压节点和第一参考电压之间，并且分压器可以产生处于内部电压和第一参考电压之间的反馈电压。 第一比较器可以被配置为响应于将反馈电压与第二参考电压进行比较而产生第一比较结果，并且第二比较器可以被配置为响应于响应于将反馈电压与响应于第二参考电压进行比较而产生第二比较结果 到控制信号。 驱动器可以耦合在外部电压和内部电压节点之间，并且驱动器可以被配置为响应于第一和第二比较结果而产生内部电压。 还讨论了相关方法和智能卡。

公开(公告)号：US07669788B2

公开(公告)日：2010-03-02

申请号：US10864994

申请日：2004-06-10

申请人： Yong-Seok Park ,  Kyoung-Heon Heo ,  Seung-Won Lee

发明人： Yong-Seok Park ,  Kyoung-Heon Heo ,  Seung-Won Lee

IPC分类号： B05B1/26

CPC分类号： B05C5/0254 ,  B05B13/0207

摘要： A fluid injector for treating a surface of a flat display panel includes a case provided with a cavity for receiving fluid; a pair of nozzle guiders coupled to the case and disposed facing each other; a gap-adjusting plate disposed between the nozzle guiders to adjust a gap between the nozzle guiders; and a coupling device for coupling the nozzle guiders to the gap-adjusting plate.

摘要翻译： 用于处理平面显示面板的表面的流体注入器包括设置有用于接收流体的空腔的壳体; 一对连接到壳体并相对设置的喷嘴引导器; 设置在所述喷嘴引导件之间的间隙调节板，以调节所述喷嘴引导件之间的间隙; 以及用于将喷嘴引导件联接到间隙调节板的联接装置。

公开(公告)号：US20070285990A1

公开(公告)日：2007-12-13

申请号：US11648293

申请日：2006-12-29

申请人： Seung-Won Lee

发明人： Seung-Won Lee

IPC分类号： G11C11/34

CPC分类号： G11C16/26 ,  G11C7/12 ,  G11C7/14 ,  G11C16/24

摘要： Provided are a semiconductor device and a method for compensating for a voltage drop of a bit line. The semiconductor device includes at least one monitoring bit line and at least one main memory bit line, and monitors a voltage of the at least one monitoring bit line after a precharging operation and supplies a predetermined compensation current to the at least one monitoring bit line and the at least one main memory bit line based on a monitoring result. Accordingly, it is possible to precisely compensate for a voltage drop occurring in the main memory bit line due to under precharge or leakage current, thereby preventing unnecessary compensation current from being supplied. Therefore, it is possible to stably perform a read operation of the semiconductor device.

摘要翻译： 提供一种用于补偿位线的电压降的半导体器件和方法。 所述半导体器件包括至少一个监视位线和至少一个主存储器位线，并且在预充电操作之后监视所述至少一个监视位线的电压，并将预定补偿电流提供给所述至少一个监视位线;以及 所述至少一个主存储器位线基于监视结果。 因此，可以精确地补偿由于在预充电或漏电流之下在主存储器位线中发生的电压降，从而防止不必要的补偿电流被提供。 因此，可以稳定地执行半导体器件的读取操作。

公开(公告)号：US07016232B2

公开(公告)日：2006-03-21

申请号：US10922122

申请日：2004-08-18

申请人： Seung-Won Lee ,  Seung-Keun Lee

发明人： Seung-Won Lee ,  Seung-Keun Lee

IPC分类号： G12C16/00

CPC分类号： G11C7/062 ,  G11C7/18 ,  G11C16/04 ,  G11C16/28 ,  G11C29/24 ,  G11C29/50004

摘要： A memory device in accordance with embodiments of the present invention includes a reference cell array and a plurality of banks. Each of the banks includes memory cells. A plurality of current copier circuits corresponds to the banks, respectively. Each of the current copier circuits copies a reference current flowing through a reference cell array to generate a reference voltage. A plurality of sense blocks correspond to the banks, respectively. Each of the sense blocks includes a plurality of sense amplifiers for sensing data from a corresponding bank in response to the reference voltage from the corresponding current copier circuit. Memory cell lay-out area is reduced, and sense speed is increased.

摘要翻译： 根据本发明的实施例的存储器件包括参考单元阵列和多个存储体。 每个银行都包含存储单元。 多个当前复印机电路分别对应于存储体。 每个当前复印机电路复制流过参考单元阵列的参考电流以产生参考电压。 多个感测块分别对应于存储体。 每个感测块包括多个读出放大器，用于响应于来自相应的当前复印机电路的参考电压来感测来自相应存储体的数据。 存储单元布局区域减少，感测速度提高。

公开(公告)号：US08625366B2

公开(公告)日：2014-01-07

申请号：US13325876

申请日：2011-12-14

申请人： Seung-Won Lee

发明人： Seung-Won Lee

IPC分类号： G11C5/14 ,  G11C7/00 ,  G05F1/10 ,  G05F3/02

CPC分类号： H02M3/073 ,  G11C5/145 ,  G11C5/147 ,  H02M2003/071

摘要： A negative high voltage generator includes a charge providing unit and a voltage conversion unit. The charge providing unit is configured to periodically output a predetermined amount of positive charges received from a supply voltage. The voltage conversion unit is configured to store the positive charges and to discharge the stored positive charges to a ground voltage to generate a negative high voltage having a magnitude larger than a magnitude of the supply voltage.

摘要翻译： 负高压发生器包括充电提供单元和电压转换单元。 充电提供单元被配置为周期性地输出从电源电压接收的预定量的正电荷。 电压转换单元被配置为存储正电荷并且将所存储的正电荷放电到接地电压以产生具有大于电源电压幅度的幅度的负高电压。

公开(公告)号：US08593898B2

公开(公告)日：2013-11-26

申请号：US13291492

申请日：2011-11-08

申请人： Seung-Won Lee ,  Sung-Hee Cho

发明人： Seung-Won Lee ,  Sung-Hee Cho

IPC分类号： G11C7/00

CPC分类号： G11C5/147

摘要： An electronic device includes a functional unit and a current compensation unit. The functional unit operates based on a power supplied by an external host through power supply lines and generates a control signal based on an amount of power consumption of the functional unit. The current compensation unit compensates a change in a power supply current based on the control signal, where the power supply current is a current flowing through the power supply lines.

摘要翻译： 电子设备包括功能单元和电流补偿单元。 功能单元基于由外部主机通过电源线提供的电力进行工作，并且基于功能单元的功耗量生成控制信号。 电流补偿单元基于控制信号来补偿电源电流的变化，其中电源电流是流过电源线的电流。