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1.发明申请公开(公告)号：US20200212309A1
公开(公告)日：2020-07-02
申请号：US16728273
申请日：2019-12-27
发明人： Hyong-Jong CHOI , Tae-Ryang HONG , Jun-Yun KIM , Jin Hee KIM , Ah-Rang LEE
摘要： The present disclosure provides an organic light emitting diode comprising a first electrode; a second electrode facing the first electrode; and an emitting material layer. The emitting material layer includes a p-type host, a n-type host and a phosphorescent dopant and positioned between the first electrode and the second electrode, wherein a first energy level of a HOMO of the p-type host is equal to or lower than a second energy level of a HOMO of the n-type host, and a difference between an energy level of a singlet state of the n-type host and an energy level of a triplet state of the n-type host is greater than 0.3 eV and smaller than 0.5 eV.
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公开(公告)号：US20210163427A1
公开(公告)日：2021-06-03
申请号：US17103469
申请日：2020-11-24
发明人： Jun-Yun KIM , Hyong-Jong CHOI , Joong-Hwan YANG , Bo-Min SEO , Tae-Ryang HONG , Jin Hee KIM , Eun-Chul SHIN
IPC分类号： C07D253/08 , H01L51/00
摘要： The present disclosure relates to an organic compound having the following structure of Chemical Formula 1, and an organic light emitting diode (OLED) and an organic light emitting device including the organic compound. The organic compound includes a triazine moiety of an electron acceptor and a fused hetero aromatic moiety of an electron donor separated from the triazine moiety. The organic compound includes the electron acceptor moiety and the electron donor moiety in a single molecule, thus charges can be moved in the molecule. Also, since the organic compound includes the rigid fused hetero aromatic ring, three dimensional conformation of the organic compound is limited, and therefore the compound may have excellent luminous efficiency and color purity.
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公开(公告)号：US20230313372A1
公开(公告)日：2023-10-05
申请号：US18014265
申请日：2021-07-16
申请人： SOULBRAIN CO., LTD.
发明人： Chang Bong YEON , Jin Hee KIM , Jae Sun JUNG , Jong Moon KIM , Seung Hyun LEE , Seok Jong LEE
IPC分类号： C23C16/455 , C23C16/02 , C23C16/44 , H01L21/02
CPC分类号： C23C16/45534 , C23C16/0272 , C23C16/4408 , H01L21/0228 , H01L21/02304
摘要： The present invention relates to a growth inhibitor for forming a thin film, a method of forming a thin film using the growth inhibitor, and a semiconductor substrate fabricated by the method. More specifically, the growth inhibitor for forming a thin film of the present invention is a compound represented by Chemical Formula 1: AnBmXoYiZj. In Chemical Formula 1, A is carbon or silicon; B is hydrogen or an alkyl group having 1 to 3 carbon atoms; X includes one or more of fluorine (F), chlorine (Cl), bromine (Br), and iodine (I); Y and Z independently include one or more selected from the group consisting of oxygen, nitrogen, sulfur, and fluorine and are different from each other; n is an integer from 1 to 15; o is an integer greater than or equal to 1; m is 0 to 2n+1; and i and j are integers from 0 to 3.
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公开(公告)号：US20230257881A1
公开(公告)日：2023-08-17
申请号：US18014452
申请日：2021-07-16
申请人： SOULBRAIN CO., LTD.
发明人： Chang Bong YEON , Jin Hee KIM , Jae Sun JUNG , Jong Moon KIM , Seung Hyun LEE , Seok Jong LEE
IPC分类号： C23C16/455 , C23C16/34 , H01L21/768
CPC分类号： C23C16/45534 , C23C16/45536 , C23C16/34 , H01L21/76841
摘要： The present invention relates to a growth inhibitor for forming a thin film, a method of forming a thin film using the growth inhibitor, and a semiconductor substrate fabricated by the method. More particularly, the growth inhibitor for forming a thin film according to the present invention is a compound represented by Chemical Formula 1: AnBmXoYiZj. A is carbon or silicon; B is hydrogen or an alkyl group having 1 to 3 carbon atoms; X is a leaving group having a bond dissociation energy of 50 to 350 KJ/mol; Y and Z independently include one or more selected from the group consisting of oxygen, nitrogen, sulfur, and fluorine and are different from each other; n is an integer from 1 to 15; o is an integer greater than or equal to 1; m is 0 to 2n+1; and i and j are integers from 0 to 3.
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5.发明公开公开(公告)号：US20240167151A1
公开(公告)日：2024-05-23
申请号：US17773287
申请日：2020-10-28
申请人： SOULBRAIN CO., LTD.
发明人： Chang Bong YEON , Jin Hee KIM , Jae Sun JUNG , Seok Jong LEE
IPC分类号： C23C16/18 , C23C16/40 , C23C16/455
CPC分类号： C23C16/18 , C23C16/407 , C23C16/45525
摘要： The present invention relates to an indium precursor compound, a method of preparing a thin film using the same, and a board prepared using the same. More particularly, the present invention relates to an indium precursor compound represented by Chemical Formula 1, a method of preparing a thin film using the same, and a board prepared using the same.
According to the present invention, a uniform thin film may be formed, productivity may be increased due to an increased deposition rate, thermal stability and storage stability may be excellent, and an effect of easy handling may be obtained.-
公开(公告)号：US20190103560A1
公开(公告)日：2019-04-04
申请号：US16205231
申请日：2018-11-30
申请人： SOULBRAIN CO., LTD.
发明人： Kwang Ju JUNG , Seok Jong LEE , Eun Chul SHIN , Jin Hee KIM
IPC分类号： H01L51/00 , C07D491/048 , C09K11/06 , C07D519/00 , C07F9/6561 , C07D495/04
摘要： The present invention provides a compound represented by Chemical Formula 1, and a light emitting device comprising the same.
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