公开(公告)号：US20240145301A1

公开(公告)日：2024-05-02

申请号：US18277075

申请日：2022-03-04

申请人： SOULBRAIN CO., LTD.

发明人： Chang Bong YEON ,  Jae Sun JUNG ,  Ji Hyun NAM

IPC分类号： H01L21/768 ,  C23C16/34 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/46 ,  C23C16/50 ,  H01L21/285

CPC分类号： H01L21/76841 ,  C23C16/34 ,  C23C16/4408 ,  C23C16/448 ,  C23C16/45534 ,  C23C16/45553 ,  C23C16/46 ,  C23C16/50 ,  H01L21/28556

摘要： Disclosed are a metal thin film precursor composition, a method of forming a thin film using the metal thin film precursor composition, and a semiconductor substrate fabricated using the method. The metal thin film precursor composition includes a metal thin film precursor compound and a growth regulator including a predetermined terminal group and structure. In a thin film deposition process, by using the metal thin film precursor composition, side reactions may be suppressed and thin film growth rate may be controlled appropriately. Since process by-products in a thin film are removed, even when the thin film is formed on a substrate having a complicated structure, step coverage and the thickness uniformity and resistivity characteristics of the thin film may be greatly improved. In addition, corrosion or deterioration may be prevented, and the crystallinity of the thin film may be improved, thereby improving the electrical properties of the thin film.

公开(公告)号：US20230175119A1

公开(公告)日：2023-06-08

申请号：US18011146

申请日：2021-06-22

申请人： SOULBRAIN CO., LTD.

发明人： Chang Bong YEON ,  Jae Sun JUNG ,  Hye Ran BYUN ,  Tae Young EOM ,  Seok Jong LEE

IPC分类号： C23C16/18 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40

CPC分类号： C23C16/18 ,  C23C16/45553 ,  C23C16/34 ,  C23C16/405

摘要： The present invention relates to a precursor for forming a thin film. The precursor is in a liquid state under conditions of 20° C. and 1 bar and includes 20 to 100% by weight of a coordination compound represented by Chemical Formula 1 below and 0 to 80% by weight of an alkyl cyanide containing an alkyl group having 1 to 15 carbon atoms: [Chemical Formula 1] MXnLmYz. M is niobium, tungsten, or molybdenum; X is a halogen element; n is 1 to 6; L is an alkyl cyanide containing an alkyl group having 1 to 15 carbon atoms, or a linear or cyclic saturated hydrocarbon having 3 to 15 carbon atoms and substituted with one or more nitrogen, oxygen, phosphorus, or sulfur atoms; m is 1 to 3; bonded Y is an amine; z is an integer from 0 to 4; and n+z is 3 to 6.

公开(公告)号：US20240167151A1

公开(公告)日：2024-05-23

申请号：US17773287

申请日：2020-10-28

申请人： SOULBRAIN CO., LTD.

发明人： Chang Bong YEON ,  Jin Hee KIM ,  Jae Sun JUNG ,  Seok Jong LEE

IPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/455

CPC分类号： C23C16/18 ,  C23C16/407 ,  C23C16/45525

摘要： The present invention relates to an indium precursor compound, a method of preparing a thin film using the same, and a board prepared using the same. More particularly, the present invention relates to an indium precursor compound represented by Chemical Formula 1, a method of preparing a thin film using the same, and a board prepared using the same.
According to the present invention, a uniform thin film may be formed, productivity may be increased due to an increased deposition rate, thermal stability and storage stability may be excellent, and an effect of easy handling may be obtained.

公开(公告)号：US20240136175A1

公开(公告)日：2024-04-25

申请号：US18277074

申请日：2022-02-22

申请人： SOULBRAIN CO., LTD.

发明人： Jae Sun JUNG ,  Chang Bong YEON ,  Seung Hyun LEE ,  Ji Hyun NAM ,  Sung Woo CHO

IPC分类号： H01L21/02 ,  H01L21/3205

CPC分类号： H01L21/02214 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/32051

摘要： The present invention relates to an auxiliary precursor, a thin film precursor composition, a method of forming a thin film using the thin film precursor composition, and a semiconductor substrate fabricated using the method. The present invention provides the thin film precursor composition including a thin film precursor compound and a compound having a predetermined structure that exhibits reaction stability as the auxiliary precursor. By using the thin film precursor composition in a thin film deposition process, side reactions may be suppressed, and thin film growth rate may be appropriately controlled. In addition, since process by-products are removed from a thin film, even when a thin film is formed on a substrate having a complicated structure, step coverage and the thickness uniformity and resistivity characteristics of the thin film may be greatly improved. In addition, corrosion or deterioration may be prevented, and the crystallinity of the thin film may be improved, thereby improving the electrical properties of the thin film.

公开(公告)号：US20230251565A1

公开(公告)日：2023-08-10

申请号：US18012086

申请日：2021-07-06

申请人： SOULBRAIN CO., LTD.

发明人： Chang Bong YEON ,  Jae Sun JUNG ,  Seung Chul DO ,  Ho Lim WANG

IPC分类号： G03F1/62 ,  C23C16/455 ,  G03F1/48 ,  C23C16/44

CPC分类号： G03F1/62 ,  C23C16/45534 ,  G03F1/48 ,  C23C16/4408

摘要： The present invention relates to a growth inhibitor for forming a pellicle-protective thin film, a method of forming a pellicle-protective thin film using the growth inhibitor, and a mask fabricated by the method. More particularly, the growth inhibitor for forming a pellicle-protective thin film according to the present invention is a compound presented by Chemical Formula 1: AnBmXoYiZj. A is carbon or silicon; B is hydrogen or an alkyl group having 1 to 3 carbon atoms; X includes one or more of fluorine (F), chlorine (Cl), bromine (Br), and iodine (I); Y and Z independently include one or more selected from the group consisting of oxygen, nitrogen, sulfur, and fluorine and are different from each other; n is an integer from 1 to 15; o is an integer greater than or equal to 1; m is 0 to 2n+1; and i and j are integers from 0 to 3.

公开(公告)号：US20230313372A1

公开(公告)日：2023-10-05

申请号：US18014265

申请日：2021-07-16

申请人： SOULBRAIN CO., LTD.

发明人： Chang Bong YEON ,  Jin Hee KIM ,  Jae Sun JUNG ,  Jong Moon KIM ,  Seung Hyun LEE ,  Seok Jong LEE

IPC分类号： C23C16/455 ,  C23C16/02 ,  C23C16/44 ,  H01L21/02

CPC分类号： C23C16/45534 ,  C23C16/0272 ,  C23C16/4408 ,  H01L21/0228 ,  H01L21/02304

摘要： The present invention relates to a growth inhibitor for forming a thin film, a method of forming a thin film using the growth inhibitor, and a semiconductor substrate fabricated by the method. More specifically, the growth inhibitor for forming a thin film of the present invention is a compound represented by Chemical Formula 1: AnBmXoYiZj. In Chemical Formula 1, A is carbon or silicon; B is hydrogen or an alkyl group having 1 to 3 carbon atoms; X includes one or more of fluorine (F), chlorine (Cl), bromine (Br), and iodine (I); Y and Z independently include one or more selected from the group consisting of oxygen, nitrogen, sulfur, and fluorine and are different from each other; n is an integer from 1 to 15; o is an integer greater than or equal to 1; m is 0 to 2n+1; and i and j are integers from 0 to 3.

公开(公告)号：US20230257881A1

公开(公告)日：2023-08-17

申请号：US18014452

申请日：2021-07-16

申请人： SOULBRAIN CO., LTD.

发明人： Chang Bong YEON ,  Jin Hee KIM ,  Jae Sun JUNG ,  Jong Moon KIM ,  Seung Hyun LEE ,  Seok Jong LEE

IPC分类号： C23C16/455 ,  C23C16/34 ,  H01L21/768

CPC分类号： C23C16/45534 ,  C23C16/45536 ,  C23C16/34 ,  H01L21/76841

摘要： The present invention relates to a growth inhibitor for forming a thin film, a method of forming a thin film using the growth inhibitor, and a semiconductor substrate fabricated by the method. More particularly, the growth inhibitor for forming a thin film according to the present invention is a compound represented by Chemical Formula 1: AnBmXoYiZj. A is carbon or silicon; B is hydrogen or an alkyl group having 1 to 3 carbon atoms; X is a leaving group having a bond dissociation energy of 50 to 350 KJ/mol; Y and Z independently include one or more selected from the group consisting of oxygen, nitrogen, sulfur, and fluorine and are different from each other; n is an integer from 1 to 15; o is an integer greater than or equal to 1; m is 0 to 2n+1; and i and j are integers from 0 to 3.

公开(公告)号：US20240352583A1

公开(公告)日：2024-10-24

申请号：US18039206

申请日：2023-01-05

申请人： SOULBRAIN CO., LTD.

发明人： Seung Hyun LEE ,  Jae Sun JUNG ,  Chang Bong YEON ,  Deok Hyun KIM

IPC分类号： C23C16/455 ,  C23C16/40 ,  C23C16/50 ,  H01L21/02

CPC分类号： C23C16/45553 ,  C23C16/401 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45536 ,  C23C16/50 ,  H01L21/02312

摘要： The present invention relates to an oxide film reaction surface control agent, a method of forming an oxide film using the oxide film reaction surface control agent, a semiconductor substrate including the oxide film, and a semiconductor device including the semiconductor substrate. According to the present invention, by providing a compound having a predetermined structure as an oxide film reaction surface control agent, a deposition layer having a uniform thickness due to a difference in the adsorption distribution of the oxide film reaction surface control agent is formed as a shielding area on a substrate, thereby reducing thin film deposition rate and appropriately reducing thin film growth rate. Accordingly, even when a thin film is formed on a substrate having a complex structure, step coverage and the thickness uniformity of the thin film may be greatly improved, and impurities may be reduced.

公开(公告)号：US20240240318A1

公开(公告)日：2024-07-18

申请号：US18288228

申请日：2022-05-27

申请人： SOULBRAIN CO., LTD.

发明人： Jong Moon KIM ,  Jae Sun JUNG ,  Kok Chew TAN ,  Chang Bong YEON

IPC分类号： C23C16/455 ,  C01G25/02 ,  C01G27/02 ,  C23C16/40 ,  H01L21/02

CPC分类号： C23C16/45553 ,  C01G25/02 ,  C01G27/02 ,  C23C16/405 ,  C23C16/45527 ,  H01L21/02181 ,  H01L21/02189 ,  C01P2002/72 ,  C01P2006/40

摘要： The present invention relates to a film-forming material, a film-forming composition, a film-forming method using the film-forming material and the film-forming composition, and a semiconductor device fabricated using the method. According to the present invention, by reducing a growth rate, even when forming a thin film on a substrate having a complex structure, a conformal thin film may be provided. In addition, by reducing impurities in the thin film and greatly improving the density of the thin film, leakage current generated due to oxidation of a lower electrode in the conventional high-temperature process may be greatly reduced. Therefore, the present invention has an effect of providing a film-forming material, a film-forming composition, a film-forming method using the film-forming material and the film-forming composition, and a semiconductor device fabricated using the film-forming method.