公开(公告)号：US10347803B2

公开(公告)日：2019-07-09

申请号：US14931140

申请日：2015-11-03

Applicant: LG INNOTEK CO., LTD.

Inventor： Eun Dk Lee ,  Jung Hun Oh

IPC: H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/48

Abstract: A light emitting device package may include a package body, a light emitting device on the package body, a first molding member that surrounds the light emitting device, and a second molding member having a hemi-spherical structure to surround the first molding member. The molding member includes a viscous material.

公开(公告)号：US08907319B2

公开(公告)日：2014-12-09

申请号：US13711056

申请日：2012-12-11

Applicant: LG Innotek Co., Ltd.

Inventor： Hyeong Seon Yun ,  Eun Dk Lee

IPC: H01L33/04

CPC classification number: H01L33/04 ,  H01L25/167 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/10 ,  H01L33/16 ,  H01L33/486 ,  H01L33/642 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014

Abstract: A light emitting device package includes a body having a cavity, at least one insulating layer disposed on the body, first and second electrode layers disposed on the insulating layer and electrically isolated from each other, at least one light emitting device disposed on a bottom surface of the cavity and electrically connected to the first and second electrode layer, a light-transmissive resin layer sealing the light emitting device disposed in the cavity, and a metal layer disposed on a rear surface of the body to face the light emitting device, wherein the light emitting device is grown in an m-direction on the (1123) plane of a substrate and includes a light emitting structure including a first conductive semiconductor layer, and active layer, and a second conductive semiconductor layer.

Abstract translation: 发光器件封装包括具有空腔的本体，设置在主体上的至少一个绝缘层，设置在绝缘层上并彼此电隔离的第一和第二电极层，设置在底表面上的至少一个发光器件 并且电连接到第一和第二电极层，密封设置在空腔中的发光器件的透光树脂层和设置在本体的后表面上以面对发光器件的金属层，其中 发光器件在衬底的（1123）面上的m方向上生长，并且包括包括第一导电半导体层和有源层的发光结构和第二导电半导体层。

公开(公告)号：US10734552B2

公开(公告)日：2020-08-04

申请号：US16310340

申请日：2017-06-20

Applicant: LG INNOTEK CO., LTD.

Inventor： Su Ik Park ,  Youn Joon Sung ,  Min Sung Kim ,  Yong Gyeong Lee ,  Eun Dk Lee

IPC: H01L33/38 ,  H01L33/48 ,  H01L33/32 ,  H01L33/40 ,  H01L33/22

Abstract: An embodiment provides a semiconductor device including a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a plurality of recesses passing through the second conductive semiconductor layer and the active layer and extending to a portion of the first conductive semiconductor layer; a plurality of first electrodes disposed inside the plurality of recesses and electrically connected with the first conductive semiconductor layer; and a second electrode electrically connected with the second conductive semiconductor layer, wherein a ratio of a first area of where the plurality of first electrodes are in contact with the first conductive semiconductor layer and a second area of where the second electrode is in contact with the second conductive semiconductor layer (first area:second area) ranges from 1:3 to 1:10.