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公开(公告)号:US10910790B2
公开(公告)日:2021-02-02
申请号:US16465461
申请日:2017-12-13
Applicant: LG INNOTEK CO., LTD.
Inventor: Baek Jun Kim , Ho Jae Kang , Hui Seong Kang , Keon Hwa Lee , Yong Gyeong Lee
Abstract: Embodiments pertain to a semiconductor device package, a method of manufacturing the semiconductor device package, and an autofocusing apparatus including the semiconductor device package. The semiconductor device package according to an embodiment may include: a package body; a diffusion unit; and a vertical cavity surface emitting laser (VCSEL) semiconductor device disposed on a support and under the diffusion unit. According to the embodiment, the package body may include the support, a first sidewall protruding to a first thickness from an edge region of an upper surface of the support and having a first upper surface of a first width, and a second sidewall protruding to a second thickness from the first upper surface of the first side wall and having a second upper surface of a second width, wherein the support, the first sidewall, and the second sidewall may be integrally formed with the same material. The diffusion unit may be disposed on the first upper surface of the first sidewall and may be disposed to be surrounded by the second sidewall.
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公开(公告)号:US09748452B2
公开(公告)日:2017-08-29
申请号:US15123097
申请日:2015-02-03
Applicant: LG INNOTEK CO., LTD.
Inventor: Muyng Gi Kim , Hui Seong Kang , Yeong June Lee , Bong Kul Min
CPC classification number: H01L33/58 , H01L23/3121 , H01L33/486 , H01L33/54 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
Abstract: One embodiment comprises: a body having a cavity which includes a bottom and sides; a light-emitting element arranged within the cavity of the body; a molding part arranged within the cavity so as to seal the light-emitting element; and a lens which includes a light incident surface and a light emitting surface and is arranged on the molding part, wherein the diameter of the light incident surface of the lens is smaller than a maximum diameter of the cavity, and the height of the lens is lower than the diameter of the light incident surface of the lens.
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