Abstract:
A light emitting device of an embodiment includes a substrate, a light emitting structure disposed under the substrate, the light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, first and second electrodes respectively connected to the first and second conductive semiconductor layers, a metal reflecting layer disposed under the light emitting structure, and a first insulating layers disposed between the first electrode and the light emitting structure, between the first electrode and the second electrode, and between the first electrode and the metal reflecting layer, wherein the metal reflecting layer includes a first segment overlapped with the second electrode in a thickness direction of the light emitting structure and a second segment disposed with extending from the first segment.
Abstract:
A light emitting device package according to an embodiment comprises: a light emitting device comprising a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; first and second lead frames disposed to be spaced apart from each other; first and second solder portions disposed on the first and second lead frames, respectively; and first and second pads disposed between the first and second solder portions and the first and second conductive semiconductor layers, respectively, wherein at least one of the first or second pad comprises at least one of a rounding portion and a chamfer portion, wherein the first pad comprises a first-first edge and a first-second edge being positioned farther than the first-first edge from the center of the light emitting device, wherein the second pad comprises a second-first edge and a second-second edge being positioned farther than the second-first edge from the center of the light emitting device, and wherein the rounding portion or the chamfer portion is positioned at at least one of the first-second edge or the second-second edge.
Abstract:
A light emitting device includes a sapphire substrate; a light emitting structure disposed on the sapphire substrate, and including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a first electrode electrically connected to the first conductivity type semiconductor layer; a second electrode electrically connected to the second conductivity type semiconductor layer; a first bonding pad electrically connected to the first electrode; a second bonding pad electrically connected to the second electrode; a first insulation layer disposed on the light emitting structure; and a second insulation layer disposed between the second electrode and the second bonding pad.
Abstract:
A light emitting device and a light emitting device package are provided. The light emitting device may include a substrate, a light emitting structure provided under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first insulating layer configured to expose the second conductive semiconductor layer and provided on a lower edge of the light emitting structure, a first light permeable electrode layer provided under the second conductive semiconductor layer exposed by the first insulating layer, a second light permeable electrode layer provided under the first insulating layer and the first light permeable electrode layer, and a reflective layer provided under the second light permeable electrode layer.