公开(公告)号：US08927961B2

公开(公告)日：2015-01-06

申请号：US14454581

申请日：2014-08-07

Applicant: LG Innotek Co., Ltd.

Inventor： Kyong Jun Kim

IPC: H01L29/06 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/06 ,  B82Y99/00 ,  H01L33/04 ,  H01L33/12 ,  H01L33/32

Abstract: Disclosed is a semiconductor light emitting device including a first conductive semiconductor layer including an n-type dopant, an active layer, and a second to sixth conductive semiconductor layers including a p-type dopant. The third to sixth conductive semiconductor layers includes an AlGaN-based semiconductor on the active layer, and the second conductive semiconductor layer includes a GaN-based semiconductor layer on the sixth conductive semiconductor layer. The active layer includes plurality of quantum barrier layers and plurality of quantum well layers and includes a cycle of 2 to 10. The plurality of quantum well layers include an InGaN semiconductor and at least one of the plurality of quantum barrier layers includes a GaN-based semiconductor. The sixth conductive semiconductor layer has a thickness of about 5 nm to about 100 nm.

Abstract translation: 公开了一种半导体发光器件，其包括包括n型掺杂剂的第一导电半导体层，有源层和包括p型掺杂剂的第二至第六导电半导体层。 第三至第六导电半导体层包括有源层上的AlGaN基半导体，第二导​​电半导体层在第六导电半导体层上包括GaN基半导体层。 有源层包括多个量子势垒层和多个量子阱层，并且包括2到10的周期。多个量子阱层包括InGaN半导体，并且多个量子势垒层中的至少一个包括GaN基 半导体。 第六导电半导体层具有约5nm至约100nm的厚度。

公开(公告)号：US08950925B2

公开(公告)日：2015-02-10

申请号：US14171552

申请日：2014-02-03

Applicant: LG Innotek Co., Ltd.

Inventor： Kyong Jun Kim

IPC: F21V7/04 ,  F21V23/00 ,  F21K99/00 ,  F21V8/00 ,  H05K3/34 ,  H01L33/48 ,  H01L33/62 ,  H05K1/18 ,  H05K3/00 ,  H05K3/28

CPC classification number: F21V23/00 ,  F21K9/00 ,  G02B6/0031 ,  G02B6/0068 ,  G02B6/0083 ,  G02B6/0085 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49107 ,  H05K1/189 ,  H05K3/0058 ,  H05K3/281 ,  H05K3/3426 ,  H05K3/3452 ,  H05K2201/10106 ,  H05K2201/10651 ,  H05K2201/10818 ,  H05K2201/2009 ,  H05K2203/0577 ,  Y02P70/613 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: Provided are a light emitting apparatus and a light unit having the same. The light emitting apparatus includes a light emitting device includes a light emitting element and a plurality of external leads, and a plurality of electrode pads under the light emitting device.

Abstract translation: 提供一种发光装置和具有该发光装置的光单元。 发光装置包括发光装置，其包括发光元件和多个外部引线，以及在发光器件下方的多个电极焊盘。

公开(公告)号：US08829490B2

公开(公告)日：2014-09-09

申请号：US14218829

申请日：2014-03-18

Applicant: LG Innotek Co., Ltd.

Inventor： Kyong Jun Kim

IPC: H01L29/06

CPC classification number: H01L33/06 ,  B82Y99/00 ,  H01L33/04 ,  H01L33/12 ,  H01L33/32

Abstract: Disclosed is a semiconductor light emitting device including a first to third conductive semiconductor layers which have an n-type dopant, an active layer, and a fourth and fifth conductive semiconductor layers which have a p-type dopant. The first and third conductive semiconductor layers are a GaN semiconductor, and the second conductive semiconductor layer is an InGaN-based semiconductor layer. The fourth conductive semiconductor layer is formed of an AlGaN semiconductor and the fifth conductive semiconductor layer is formed of a GaN-based semiconductor layer. The active layer includes plurality of quantum barrier layers and plurality of quantum well layers and includes a cycle of 2 to 10. The plurality of quantum well layers include an InGaN semiconductor and at least one of the plurality of quantum barrier layers includes a GaN-based semiconductor, and at least two of the plurality barrier layers has a thickness of about 50 Å to about 300 Å.

Abstract translation: 公开了一种半导体发光器件，其包括具有n型掺杂剂的第一至第三导电半导体层，有源层以及具有p型掺杂剂的第四和第五导电半导体层。 第一和第三导电半导体层是GaN半导体，并且第二导电半导体层是InGaN基半导体层。 第四导电半导体层由AlGaN半导体形成，第五导电半导体层由GaN基半导体层形成。 有源层包括多个量子势垒层和多个量子阱层，并且包括2到10的周期。多个量子阱层包括InGaN半导体，并且多个量子势垒层中的至少一个包括GaN基 半导体，并且多个阻挡层中的至少两个具有大约至大约的厚度。