公开(公告)号：US07699023B2

公开(公告)日：2010-04-20

申请号：US11925667

申请日：2007-10-26

申请人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima ,  Mei Chang

发明人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima ,  Mei Chang

IPC分类号： C23C16/455 ,  C23C16/448 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/34 ,  C23C16/4404 ,  C23C16/4411 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/28562 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871 ,  Y10T137/0396

摘要： Embodiments as described herein provide an apparatus and a method for performing an atomic layer deposition process. In one embodiment, a deposition chamber assembly contains a substrate support having a substrate receiving surface, and a chamber lid containing a tapered passageway extending from a central portion of the chamber lid, and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The system also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve. In one example, the gas source is a gas box assembly which is attached to the deposition chamber by at least one disconnect fitting and contains an inlet tube directed away from the gas outlet.

摘要翻译： 本文所述的实施例提供了用于执行原子层沉积工艺的装置和方法。 在一个实施例中，沉积室组件包含具有基板接收表面的基板支撑件和包含从腔室盖的中心部分延伸的锥形通道的腔室盖，以及从通道延伸到外部部分的底部表面 室盖，底表面的形状和尺寸以基本上覆盖基板接收表面。 该系统还包括联接到逐渐扩展的通道的一个或多个阀，以及耦合到每个阀的一个或多个气体源。 在一个示例中，气体源是气体箱组件，其通过至少一个分离配件附接到沉积室，并且包含远离气体出口的入口管。

公开(公告)号：US20050173068A1

公开(公告)日：2005-08-11

申请号：US11077753

申请日：2005-03-11

申请人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima

发明人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima

IPC分类号： C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768 ,  C23F1/00

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

摘要： One embodiment of the gas delivery assembly comprises a covering member having an expanding channel at a central portion of the covering member and having a bottom surface extending from the expanding channel to a peripheral portion of the covering member. One or more gas conduits are coupled to the expanding channel in which the one or more gas conduits are positioned at an angle from a center of the expanding channel. One embodiment of a chamber comprises a substrate support having a substrate receiving surface. The chamber further includes a chamber lid having a passageway at a central portion of the chamber lid and a tapered bottom surface extending from the passageway to a peripheral portion of the chamber lid. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. In one aspect, the bottom surface of the chamber lid may be tapered. In another aspect, a reaction zone defined between the chamber lid and the substrate receiving surface may comprise a small volume. In still another aspect, the passageway may comprise a tapered expanding channel extending from the central portion of the chamber lid. Another embodiment of the chamber comprises a substrate support having a substrate receiving surface. The chamber further comprises a chamber lid having an expanding channel extending from a central portion of the chamber lid and having a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid. One or more gas conduits are disposed around an upper portion of the expanding channel in which the one or more gas conduits are disposed at an angle from a center of the expanding channel. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.

公开(公告)号：US20080038463A1

公开(公告)日：2008-02-14

申请号：US11873885

申请日：2007-10-17

申请人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima

发明人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima

IPC分类号： C23C16/00

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

摘要： In one embodiment, a method for depositing a material on a substrate during an atomic layer deposition (ALD) process is provided which includes positioning the substrate on a substrate support within a process chamber, flowing a carrier gas into an expanding channel to form a circular flow of the carrier gas, exposing the substrate to the circular flow, pulsing a first reactant gas into the circular flow, and depositing a material onto the substrate. The method further provides that the process chamber has a chamber lid containing a centrally positioned expanding channel, a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid, at least two gas inlets in fluid communication with the expanding channel, and at least two conduits positioned to provide a gas flow having a circular pattern within the expanded channel.

摘要翻译： 在一个实施例中，提供了在原子层沉积（ALD）工艺期间在衬底上沉积材料的方法，其包括将衬底定位在处理室内的衬底支撑件上，使载气流入扩展通道以形成圆形 载气的流动，将基底暴露于圆形流动，将第一反应气体脉冲成圆形流，以及将材料沉积到基底上。 该方法还提供了处理室，其具有容纳中心定位的扩张通道的腔室盖，从膨胀通道延伸到腔室盖的周边部分的锥形底面，与扩张通道流体连通的至少两个气体入口， 以及至少两个管道，其定位成在膨胀通道内提供具有圆形图案的气流。

公开(公告)号：US20070099415A1

公开(公告)日：2007-05-03

申请号：US11549941

申请日：2006-10-16

申请人： Ling Chen ,  Hua Chung ,  Sean Seutter ,  Michael Yang ,  Ming Xi ,  Vincent Ku ,  Dien-Yeh Wu ,  Alan Ouye ,  Norman Nakashima ,  Barry Chin ,  Hong Zhang

发明人： Ling Chen ,  Hua Chung ,  Sean Seutter ,  Michael Yang ,  Ming Xi ,  Vincent Ku ,  Dien-Yeh Wu ,  Alan Ouye ,  Norman Nakashima ,  Barry Chin ,  Hong Zhang

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes positioning a substrate having an underlying tungsten layer within a process chamber and depositing a tungsten-containing barrier layer on the underlying tungsten layer during a cyclical layer deposition process. The tungsten-containing barrier layer contains a refractory metal nitride material. The method further provides depositing a seed layer on the tungsten-containing barrier layer during a vapor deposition process and depositing a bulk tungsten layer on the seed layer during a chemical vapor deposition process.

摘要翻译： 在一个实施例中，提供了一种在衬底上形成含钨材料的方法，其包括将具有下层钨层的衬底定位在处理室内，并且在循环层沉积期间将下述钨层上沉积含钨阻挡层 处理。 含钨阻挡层含有难熔金属氮化物材料。 该方法进一步提供在气相沉积工艺期间在含钨阻挡层上沉积种子层，并且在化学气相沉积工艺期间在种子层上沉积体钨层。

公开(公告)号：US06916398B2

公开(公告)日：2005-07-12

申请号：US10032284

申请日：2001-12-21

申请人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima

发明人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima

IPC分类号： C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768 ,  C23F1/00 ,  C23C16/00 ,  H01L21/306

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

摘要： One embodiment of the gas delivery assembly comprises a covering member having an expanding channel at a central portion of the covering member and having a bottom surface extending from the expanding channel to a peripheral portion of the covering member. One or more gas conduits are coupled to the expanding channel in which the one or more gas conduits are positioned at an angle from a center of the expanding channel. One embodiment of a chamber comprises a substrate support having a substrate receiving surface. The chamber further includes a chamber lid having a passageway at a central portion of the chamber lid and a tapered bottom surface extending from the passageway to a peripheral portion of the chamber lid. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. In one aspect, the bottom surface of the chamber lid may be tapered. In another aspect, a reaction zone defined between the chamber lid and the substrate receiving surface may comprise a small volume. In still another aspect, the passageway may comprise a tapered expanding channel extending from the central portion of the chamber lid. Another embodiment of the chamber comprises a substrate support having a substrate receiving surface. The chamber further comprises a chamber lid having an expanding channel extending from a central portion of the chamber lid and having a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid. One or more gas conduits are disposed around an upper portion of the expanding channel in which the one or more gas conduits are disposed at an angle from a center of the expanding channel. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.

摘要翻译： 气体输送组件的一个实施例包括覆盖构件，该覆盖构件在覆盖构件的中心部分处具有扩张通道，并且具有从膨胀通道延伸到覆盖构件的周边部分的底面。 一个或多个气体导管联接到膨胀通道，在该扩张通道中，一个或多个气体导管与扩张通道的中心成一角度定位。 室的一个实施例包括具有基板接收表面的基板支撑件。 该腔室还包括腔室盖，该室盖具有在腔室盖的中心部分处的通道和从通道延伸到腔室盖的周边部分的锥形底面。 室盖的底表面的形状和尺寸基本上覆盖基板接收表面。 一个或多个阀联接到通道，并且一个或多个气体源联接到每个阀。 在一个方面，室盖的底表面可以是锥形的。 在另一方面，限定在室盖和基板接收表面之间的反应区域可以包括小体积。 在另一方面，通道可以包括从腔室盖的中心部分延伸的锥形扩张通道。 腔室的另一实施例包括具有基底接收表面的基底支撑件。 腔室还包括腔室盖，其具有从腔室盖的中心部分延伸的膨胀通道，并且具有从膨胀通道延伸到腔室盖的周边部分的锥形底面。 一个或多个气体管道设置在扩张通道的上部周围，其中一个或多个气体管道以与扩张通道的中心成一定角度设置。 扼流圈设置在邻近锥形底面的周边的腔室盖上。

公开(公告)号：US08668776B2

公开(公告)日：2014-03-11

申请号：US12797999

申请日：2010-06-10

申请人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima

发明人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

摘要： Apparatus and method for forming thin layers on a substrate are provided. A processing chamber has a gas delivery assembly that comprises a lid with a cap portion and a covering member that together define an expanding channel at a central portion of the lid, the covering member having a tapered bottom surface extending from the expanding channel to a peripheral portion of the covering member. Gas conduits are coupled to the expanding channel and positioned at an angle from a center of the expanding channel to form a circular gas flow through the expanding channel. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.

摘要翻译： 提供了在基板上形成薄层的装置和方法。 处理室具有气体输送组件，该气体输送组件包括具有盖部分的盖和覆盖部件，该盖部分在盖的中心部分处共同限定出扩张通道，该覆盖部件具有从扩张通道延伸到外围的锥形底面 覆盖部件的一部分。 气体管道连接到膨胀通道并且与膨胀通道的中心成一定角度定位，以形成通过膨胀通道的圆形气流。 室盖的底表面的形状和尺寸基本上覆盖基板接收表面。 一个或多个阀联接到通道，并且一个或多个气体源联接到每个阀。 扼流圈设置在邻近锥形底面的周边的腔室盖上。

公开(公告)号：US07780788B2

公开(公告)日：2010-08-24

申请号：US11077753

申请日：2005-03-11

申请人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima

发明人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

摘要： Apparatus and method for forming thin layers on a substrate are provided. A processing chamber has a gas delivery assembly that comprises a lid with a cap portion and a covering member that together define an expanding channel at a central portion of the lid, the covering member having a tapered bottom surface extending from the expanding channel to a peripheral portion of the covering member. Gas conduits are coupled to the expanding channel and positioned at an angle from a center of the expanding channel to form a circular gas flow through the expanding channel, The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.

摘要翻译： 提供了在基板上形成薄层的装置和方法。 处理室具有气体输送组件，其包括具有盖部分的盖和覆盖部件，所述盖部在盖的中心部分处共同限定出扩张通道，所述覆盖部件具有从扩张通道延伸到外围的锥形底面 覆盖部件的一部分。 气体管道连接到膨胀通道并且与膨胀通道的中心成角度地定位，以形成通过膨胀通道的圆形气体流动。腔室盖的底表面的形状和尺寸基本上覆盖基底接收表面。 一个或多个阀联接到通道，并且一个或多个气体源联接到每个阀。 扼流圈设置在邻近锥形底面的周边的腔室盖上。

公开(公告)号：US20100247767A1

公开(公告)日：2010-09-30

申请号：US12797999

申请日：2010-06-10

申请人： LING CHEN ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima

发明人： LING CHEN ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima

IPC分类号： C23C16/455 ,  C23C16/00

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

摘要： Apparatus and method for forming thin layers on a substrate are provided. A processing chamber has a gas delivery assembly that comprises a lid with a cap portion and a covering member that together define an expanding channel at a central portion of the lid, the covering member having a tapered bottom surface extending from the expanding channel to a peripheral portion of the covering member. Gas conduits are coupled to the expanding channel and positioned at an angle from a center of the expanding channel to form a circular gas flow through the expanding channel. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.

摘要翻译： 提供了在基板上形成薄层的装置和方法。 处理室具有气体输送组件，该气体输送组件包括具有盖部分的盖和覆盖部件，该盖部分在盖的中心部分处共同限定出扩张通道，该覆盖部件具有从扩张通道延伸到外围的锥形底面 覆盖部件的一部分。 气体管道连接到膨胀通道并且与膨胀通道的中心成一定角度定位，以形成通过膨胀通道的圆形气流。 室盖的底表面的形状和尺寸基本上覆盖基板接收表面。 一个或多个阀联接到通道，并且一个或多个气体源联接到每个阀。 扼流圈设置在邻近锥形底面的周边的腔室盖上。

公开(公告)号：US07780785B2

公开(公告)日：2010-08-24

申请号：US10281079

申请日：2002-10-25

申请人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima ,  Mei Chang

发明人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima ,  Mei Chang

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/34 ,  C23C16/4404 ,  C23C16/4411 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/28562 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871 ,  Y10T137/0396

摘要： An apparatus and method for performing a cyclical layer deposition process, such as atomic layer deposition is provided. In one aspect, the apparatus includes a substrate support having a substrate receiving surface, and a chamber lid comprising a tapered passageway extending from a central portion of the chamber lid and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The apparatus also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve.

摘要翻译： 提供了一种用于执行诸如原子层沉积的循环层沉积工艺的装置和方法。 一方面，该装置包括具有基板接收表面的基板支撑件和包括从腔室盖的中心部分延伸的锥形通道的腔室盖和从通道延伸到腔室盖的周边部分的底面， 所述底表面的形状和尺寸基本上覆盖所述基板接收表面。 该装置还包括联接到逐渐扩大的通道的一个或多个阀以及联接到每个阀的一个或多个气体源。

公开(公告)号：US07748400B2

公开(公告)日：2010-07-06

申请号：US12500314

申请日：2009-07-09

申请人： Norman Nakashima ,  Christophe Marcadal ,  Seshadri Ganguli ,  Paul Ma ,  Schubert S. Chu

发明人： Norman Nakashima ,  Christophe Marcadal ,  Seshadri Ganguli ,  Paul Ma ,  Schubert S. Chu

IPC分类号： F16K3/36 ,  F16K11/20

CPC分类号： C23C16/4481 ,  C23C16/4408 ,  C23C16/45561 ,  Y10T137/3127 ,  Y10T137/4259 ,  Y10T137/87249 ,  Y10T137/877

摘要： Embodiments are related to ampoule assemblies containing bypass lines and valves. In one embodiment, ampoule assembly is provided which includes inlet and outlet lines coupled with and in fluid communication to an ampoule body, a bypass line connected between the inlet and outlet lines and containing a bypass valve disposed therein. The ampoule assembly further contains a shut-off valve disposed in the inlet line between the ampoule body and a connection point of the bypass line and the inlet line, a shut-off valve disposed in the outlet line between the ampoule body and a connection point of the bypass line and the outlet line, another shut-off valve disposed in the inlet line between the ampoule body and a disconnect fitting disposed on the inlet line, and another shut-off valve disposed in the outlet line between the ampoule body and a disconnect fitting disposed on the outlet line.

摘要翻译： 实施例涉及包含旁路管线和阀门的安瓿组件。 在一个实施例中，提供了安瓿组件，其包括与安瓿体连接并流体连通的入口和出口管线，连接在入口管线和出口管线之间并且包含设置在其中的旁通阀的旁通管线。 安瓿组件还包括设置在安瓿本体与旁通管线与入口管线的连接点之间的入口管线中的截止阀，设置在安瓿本体与连接点之间的出口管线中的截止阀 旁路管线和出口管路的另一截止阀，设置在安瓿主体与设置在入口管线上的断开配件之间的入口管线中的另一个截止阀，以及另一截止阀，其设置在安瓿主体和 断开出口管路上的接头。