公开(公告)号：US20210366705A1

公开(公告)日：2021-11-25

申请号：US17309014

申请日：2019-10-02

Applicant: Lam Research Corporation

Inventor： Arul N. Dhas ,  Ming Li ,  Tu Hong

IPC: H01L21/02 ,  C23C16/455 ,  H01L21/67

Abstract: Disclosed are apparatuses and methods for providing a substrate onto a substrate support in a processing chamber, generating an inert plasma in the processing chamber, and maintaining the inert plasma to heat the substrate to a steady state temperature, suitable for conducting plasma-enhanced chemical vapor deposition (PECVD), in less than 30 seconds from providing the substrate onto the substrate support. An apparatus may include a processing chamber, a process station that includes a substrate support, a process gas unit configured to flow an inert gas onto a substrate supported by the substrate support, a plasma source configured to generate an inert plasma in the process station, and a controller with instructions configured to flow the inert gas onto the substrate, generate the inert plasma in the first process station, and maintain the inert plasma to thereby heat the substrate.

公开(公告)号：US09328416B2

公开(公告)日：2016-05-03

申请号：US14158536

申请日：2014-01-17

Applicant: Lam Research Corporation

Inventor： Arul N. Dhas ,  Akhil Singhal ,  Ming Li ,  Kareem Boumatar

IPC: C23C16/40 ,  C23C16/44 ,  C23C16/455

CPC classification number: C23C16/401 ,  C23C16/4404 ,  C23C16/45542

Abstract: Methods for depositing film on substrates are described. In various cases, a high thermal conductivity gas such as helium is used to deposit a conditioning layer on surfaces of the reaction chamber before it is used to process substrates. The helium may be used to help atomize/vaporize a liquid reactant in a heated injection module before the reactant is delivered to the reaction chamber. In some embodiments, a purge gas including helium is used during a post-deposition purge during deposition on substrates. The disclosed embodiments allow for mixed recipe processing without having to clean the reaction chamber between recipes, and without forming a high number of particles/defects on the substrates. This allows for an improved throughput of high quality film, even where mixed recipes are used in a single reaction chamber.

Abstract translation: 描述了在基板上沉积膜的方法。 在各种情况下，使用诸如氦的高导热性气体在用于处理衬底之前在反应室的表面上沉积调理层。 在将反应物输送到反应室之前，可以使用氦气来帮助在加热的注射模块中雾化/蒸发液体反应物。 在一些实施例中，在沉积在衬底上的后期清洗中使用包括氦气的净化气体。 所公开的实施例允许混合配方处理，而不必在配方之间清洁反应室，并且不在基板上形成大量的颗粒/缺陷。 即使在单个反应室中使用混合配方，也可以提高高品质膜的产量。

公开(公告)号：US20230352279A1

公开(公告)日：2023-11-02

申请号：US18002289

申请日：2021-06-21

Applicant: Lam Research Corporation

Inventor： Nick Ray Linebarger, JR. ,  Fayaz A. Shaikh ,  Arul N. Dhas

IPC: H01L21/02 ,  C23C16/458 ,  C23C16/455 ,  H01J37/32 ,  C23C16/509

CPC classification number: H01J37/32715 ,  C23C16/45565 ,  C23C16/45597 ,  C23C16/4585 ,  C23C16/5096 ,  H01J37/32403 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32899 ,  H01L21/02274 ,  H01J2237/332

Abstract: Multi-station processing tools with station-varying support features for backside processing are provided. The support features in a first station may hold a wafer at a first set of points during backside deposition, blocking backside deposition, etching, or other processing at those points. The support features in a second station may hold a wafer at a second set of points that don’t overlap with the first set of points.

公开(公告)号：US09570289B2

公开(公告)日：2017-02-14

申请号：US14640207

申请日：2015-03-06

Applicant: Lam Research Corporation

Inventor： Arul N. Dhas

IPC: H01L21/67 ,  H01L21/02 ,  C23C16/50 ,  C23C16/455 ,  C23C16/52

CPC classification number: H01L21/02274 ,  C23C16/045 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/5096 ,  C23C16/52 ,  H01J37/3244 ,  H01L21/02164

Abstract: A method of minimizing a seam effect of a deposited TEOS oxide film during a trench filling process performed on a semiconductor substrate in a semiconductor substrate plasma processing apparatus comprises supporting a semiconductor substrate on a pedestal in a vacuum chamber thereof. Process gas including TEOS, an oxidant, and argon is flowed through a face plate of a showerhead assembly into a processing region of the vacuum chamber. RF energy energizes the process gas into a plasma wherein TEOS oxide film is deposited on the semiconductor substrate so as to fill at least one trench thereof. The argon is supplied in an amount sufficient to increase the electron density of the plasma such that the deposition rate of the TEOS oxide film towards the center of the semiconductor substrate is increased and the seam effect of the deposited TEOS oxide film in the at least one trench is reduced.

Abstract translation: 在半导体衬底等离子体处理装置中的半导体衬底上执行的沟槽填充处理期间使沉积的TEOS氧化物膜的接缝效应最小化的方法包括在其真空室中的基座上支撑半导体衬底。 包括TEOS，氧化剂和氩的工艺气体通过喷头组件的面板流入真空室的处理区域。 RF能量将工艺气体激发到等离子体中，其中TEOS氧化物膜沉积在半导体衬底上以便填充其至少一个沟槽。 以足以增加等离子体的电子密度的量供应氩气，使得TEOS氧化物膜朝向半导体衬底的中心的沉积速率增加，并且沉积的TEOS氧化物膜在至少一个 沟渠减少。

公开(公告)号：US20160260603A1

公开(公告)日：2016-09-08

申请号：US14640207

申请日：2015-03-06

Applicant: Lam Research Corporation

Inventor： Arul N. Dhas

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/52 ,  C23C16/50

CPC classification number: H01L21/02274 ,  C23C16/045 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/5096 ,  C23C16/52 ,  H01J37/3244 ,  H01L21/02164

Abstract: A method of minimizing a seam effect of a deposited TEOS oxide film during a trench filling process performed on a semiconductor substrate in a semiconductor substrate plasma processing apparatus comprises supporting a semiconductor substrate on a pedestal in a vacuum chamber thereof. Process gas including TEOS, an oxidant, and argon is flowed through a face plate of a showerhead assembly into a processing region of the vacuum chamber. RF energy energizes the process gas into a plasma wherein TEOS oxide film is deposited on the semiconductor substrate so as to fill at least one trench thereof. The argon is supplied in an amount sufficient to increase the electron density of the plasma such that the deposition rate of the TEOS oxide film towards the center of the semiconductor substrate is increased and the seam effect of the deposited TEOS oxide film in the at least one trench is reduced.

Abstract translation: 在半导体衬底等离子体处理装置中的半导体衬底上执行的沟槽填充处理期间使沉积的TEOS氧化物膜的接缝效应最小化的方法包括在其真空室中的基座上支撑半导体衬底。 包括TEOS，氧化剂和氩的工艺气体通过喷头组件的面板流入真空室的处理区域。 RF能量将工艺气体激发到等离子体中，其中TEOS氧化物膜沉积在半导体衬底上以便填充其至少一个沟槽。 以足以增加等离子体的电子密度的量供应氩气，使得TEOS氧化物膜朝向半导体衬底的中心的沉积速率增加，并且沉积的TEOS氧化物膜在至少一个 沟渠减少。

公开(公告)号：US12014921B2

公开(公告)日：2024-06-18

申请号：US17309014

申请日：2019-10-02

Applicant: Lam Research Corporation

Inventor： Arul N. Dhas ,  Ming Li ,  Tu Hong

IPC: H01L21/02 ,  C23C16/455 ,  H01L21/67

CPC classification number: H01L21/02274 ,  C23C16/45536 ,  H01L21/67017 ,  H01L21/67098

Abstract: Disclosed are apparatuses and methods for providing a substrate onto a substrate support in a processing chamber, generating an inert plasma in the processing chamber, and maintaining the inert plasma to heat the substrate to a steady state temperature, suitable for conducting plasma-enhanced chemical vapor deposition (PECVD), in less than 30 seconds from providing the substrate onto the substrate support. An apparatus may include a processing chamber, a process station that includes a substrate support, a process gas unit configured to flow an inert gas onto a substrate supported by the substrate support, a plasma source configured to generate an inert plasma in the process station, and a controller with instructions configured to flow the inert gas onto the substrate, generate the inert plasma in the first process station, and maintain the inert plasma to thereby heat the substrate.

公开(公告)号：US20210335606A1

公开(公告)日：2021-10-28

申请号：US17250979

申请日：2019-10-01

Applicant: Lam Research Corporation

Inventor： Arul N. Dhas ,  Tu Hong ,  Changhe Guo ,  Ming Li

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/44 ,  C23C16/509

Abstract: Disclosed are apparatuses and methods for flowing a reactant process gas into a processing chamber containing a substrate, generating a plasma at a first power level in the processing chamber during the flowing of the reactant process gas, thereby depositing a layer of a material on the substrate by plasma-enhanced chemical vapor deposition, maintaining the plasma while ceasing flowing the reactant process gas into the processing chamber, thereby stopping the depositing, without extinguishing the plasma, adjusting the plasma to a second power level, flowing an inert process gas into the processing chamber, thereby modifying the layer of the material while the plasma is at the second power level, and extinguishing the plasma after the modifying.

公开(公告)号：US20150203967A1

公开(公告)日：2015-07-23

申请号：US14158536

申请日：2014-01-17

Applicant: Lam Research Corporation

Inventor： Arul N. Dhas ,  Akhil Singhal ,  Ming Li ,  Kareem Boumatar

IPC: C23C16/56

CPC classification number: C23C16/401 ,  C23C16/4404 ,  C23C16/45542

Abstract: The embodiments herein present methods and apparatus for depositing film on substrates. In various cases, a high thermal conductivity gas such as helium is used to deposit a conditioning layer on surfaces of the reaction chamber before it is used to process substrates. The helium may be used to help atomize/vaporize a liquid reactant in a heated injection module before the reactant is delivered to the reaction chamber. In some embodiments, a purge gas including helium is used during a post-deposition purge during deposition on substrates. The disclosed embodiments allow for mixed recipe processing without having to clean the reaction chamber between recipes, and without forming a high number of particles/defects on the substrates. This allows for an improved throughput of high quality film, even where mixed recipes are used in a single reaction chamber.

Abstract translation: 本文的实施方案提供了在基底上沉积膜的方法和装置。 在各种情况下，使用诸如氦的高导热性气体在用于处理衬底之前在反应室的表面上沉积调理层。 在将反应物输送到反应室之前，可以使用氦气来帮助在加热的注射模块中雾化/蒸发液体反应物。 在一些实施例中，在沉积在衬底上的后期清洗中使用包括氦气的净化气体。 所公开的实施例允许混合配方处理，而不必在配方之间清洁反应室，并且不在基板上形成大量的颗粒/缺陷。 即使在单个反应室中使用混合配方，也可以提高高品质膜的产量。