-
1.发明授权Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them 有权精确定位的纳米晶须和纳米晶须阵列及其制备方法公开(公告)号：US08790462B2
公开(公告)日：2014-07-29
申请号：US12574014
申请日：2009-10-06
摘要： A nanoengineered structure comprising an array of more than about 1000 nanowhiskers on a substrate in a predetermined spatial configuration, for use for example as a photonic band gap array, wherein each nanowhisker is sited within a distance from a predetermined site not greater than about 20% of its distance from its nearest neighbour. To produce the array, an array of masses of a catalytic material are positioned on the surface, heat is applied and materials in gaseous form are introduced such as to create a catalytic seed particle from each mass, and to grow, from the catalytic seed particle, epitaxially, a nanowhisker of a predetermined material, and wherein each mass upon melting, retains approximately the same interface with the substrate surface such that forces causing the mass to migrate across said surface are less than a holding force across a wetted interface on the substrate surface.
摘要翻译： 纳米工程结构，其包括在预定空间配置中在衬底上的大于约1000纳米晶须的阵列，用于例如光子带隙阵列，其中每个纳米晶须位于与预定位置不超过约20％的距离内， 距离其最近的邻居的距离。 为了制造阵列，将一组催化材料的质量定位在表面上，加热并且引入气态物质，以便从每个物质形成催化种子颗粒并从催化种子颗粒生长 外延的是预定材料的纳米晶须，并且其中熔化时的每个质量与基底表面保持大致相同的界面，使得导致物质迁移穿过所述表面的力小于穿过基底上的润湿界面的保持力 表面。
-
2.发明授权Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them 失效精确定位的纳米晶须和纳米晶须阵列及其制备方法公开(公告)号：US07608147B2
公开(公告)日：2009-10-27
申请号：US10751944
申请日：2004-01-07
IPC分类号： C30B25/00
摘要： A nanoengineered structure comprising an array of more than about 1000 nanowhiskers on a substrate in a predetermined spatial configuration, for use for example as a photonic band gap array, wherein each nanowhisker is sited within a distance from a predetermined site not greater than about 20% of its distance from its nearest neighbor. To produce the array, an array of masses of a catalytic material are positioned on the surface, heat is applied and materials in gaseous form are introduced such as to create a catalytic seed particle from each mass, and to grow, from the catalytic seed particle, epitaxially, a nanowhisker of a predetermined material, and wherein each mass upon melting, retains approximately the same interface with the substrate surface such that forces causing the mass to migrate across said surface are less than a holding force across a wetted interface on the substrate surface.
摘要翻译： 纳米工程结构，其包括在预定空间配置中在衬底上的大于约1000纳米晶须的阵列，用于例如光子带隙阵列，其中每个纳米晶须位于与预定位置不超过约20％的距离内， 距离其最近的邻居的距离。 为了制造阵列，将一组催化材料的质量定位在表面上，加热并且引入气态物质，以便从每个物质形成催化种子颗粒并从催化种子颗粒生长 外延的是预定材料的纳米晶须，并且其中熔化时的每个质量与基底表面保持大致相同的界面，使得导致物质迁移穿过所述表面的力小于穿过基底上的润湿界面的保持力 表面。
-
公开(公告)号：US20090253250A1
公开(公告)日：2009-10-08
申请号：US12423384
申请日：2009-04-14
IPC分类号： H01L21/20
CPC分类号： C30B11/12 , B82Y30/00 , C30B25/005 , C30B29/40 , C30B29/48 , C30B29/60 , C30B29/605 , H01L21/02381 , H01L21/02543 , H01L21/02546 , H01L21/02551 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L33/0066 , Y10S977/762 , Y10S977/815 , Y10S977/89 , Y10S977/891
摘要： A method for forming a nanowhisker of, e.g., a III-V semiconductor material on a silicon substrate, comprises: preparing a surface of the silicon substrate with measures including passivating the substrate surface by HF etching, so that the substrate surface is essentially atomically flat. Catalytic particles on the substrate surface are deposited from an aerosol; the substrate is annealed; and gases for a MOVPE process are introduced into the atmosphere surrounding the substrate, so that nanowhiskers are grown by the VLS mechanism. In the grown nanowhisker, the crystal directions of the substrate are transferred to the epitaxial crystal planes at the base of the nanowhisker and adjacent the substrate surface. A segment of an optically active material may be formed within the nanowhisker and bounded by heterojunctions so as to create a quantum well wherein the height of the quantum well is much greater than the thermal energy at room temperature, whereby the luminescence properties of the segment remain constant without quenching from cryogenic temperatures up to room temperature.
摘要翻译： 在硅衬底上形成例如III-V族半导体材料的纳米晶须的方法包括：通过HF蚀刻来制备硅衬底的表面，包括钝化衬底表面，使得衬底表面基本上原子上平坦 。 基底表面上的催化颗粒由气溶胶沉积; 将基板退火; 并且用于MOVPE工艺的气体被引入到衬底周围的气氛中，使得纳米晶须通过VLS机制生长。 在生长的纳米晶须中，将基板的晶体方向转移到纳米晶须的基部并与基板表面相邻的外延晶体平面。 光学活性材料的一段可以形成在纳米晶须内并且由异质结界定，以便产生量子阱，其中量子阱的高度远大于室温下的热能，由此该段的发光特性保持 恒定，不会从低温至室温淬火。
-
公开(公告)号：US07960260B2
公开(公告)日：2011-06-14
申请号：US12423384
申请日：2009-04-14
IPC分类号： H01L21/205
CPC分类号： C30B11/12 , B82Y30/00 , C30B25/005 , C30B29/40 , C30B29/48 , C30B29/60 , C30B29/605 , H01L21/02381 , H01L21/02543 , H01L21/02546 , H01L21/02551 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L33/0066 , Y10S977/762 , Y10S977/815 , Y10S977/89 , Y10S977/891
摘要： A method for forming a nanowhisker of, e.g., a III-V semiconductor material on a silicon substrate, comprises: preparing a surface of the silicon substrate with measures including passivating the substrate surface by HF etching, so that the substrate surface is essentially atomically flat. Catalytic particles on the substrate surface are deposited from an aerosol; the substrate is annealed; and gases for a MOVPE process are introduced into the atmosphere surrounding the substrate, so that nanowhiskers are grown by the VLS mechanism. In the grown nanowhisker, the crystal directions of the substrate are transferred to the epitaxial crystal planes at the base of the nanowhisker and adjacent the substrate surface. A segment of an optically active material may be formed within the nanowhisker and bounded by heterojunctions so as to create a quantum well wherein the height of the quantum well is much greater than the thermal energy at room temperature, whereby the luminescence properties of the segment remain constant without quenching from cryogenic temperatures up to room temperature.
摘要翻译： 在硅衬底上形成例如III-V族半导体材料的纳米晶须的方法包括：通过HF蚀刻来制备硅衬底的表面，包括钝化衬底表面，使得衬底表面基本上原子上平坦 。 基底表面上的催化颗粒由气溶胶沉积; 将基板退火; 并且用于MOVPE工艺的气体被引入到衬底周围的气氛中，使得纳米晶须通过VLS机制生长。 在生长的纳米晶须中，将基板的晶体方向转移到纳米晶须的基部并与基板表面相邻的外延晶体平面。 光学活性材料的一段可以形成在纳米晶须内并且由异质结界定，以便产生量子阱，其中量子阱的高度远大于室温下的热能，由此该段的发光特性保持 恒定，不会从低温至室温淬火。
-
公开(公告)号：US07528002B2
公开(公告)日：2009-05-05
申请号：US11165126
申请日：2005-06-24
IPC分类号： H01L21/205
CPC分类号： C30B11/12 , B82Y30/00 , C30B25/005 , C30B29/40 , C30B29/48 , C30B29/60 , C30B29/605 , H01L21/02381 , H01L21/02543 , H01L21/02546 , H01L21/02551 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L33/0066 , Y10S977/762 , Y10S977/815 , Y10S977/89 , Y10S977/891
摘要： A method for forming a nanowhisker of, e.g., a III-V semiconductor material on a silicon substrate, comprises: preparing a surface of the silicon substrate with measures including passivating the substrate surface by HF etching, so that the substrate surface is essentially atomically flat. Catalytic particles on the substrate surface are deposited from an aerosol; the substrate is annealed; and gases for a MOVPE process are introduced into the atmosphere surrounding the substrate, so that nanowhiskers are grown by the VLS mechanism. In the grown nanowhisker, the crystal directions of the substrate are transferred to the epitaxial crystal planes at the base of the nanowhisker and adjacent the substrate surface. A segment of an optically active material may be formed within the nanowhisker and bounded by heterojunctions so as to create a quantum well wherein the height of the quantum well is much greater than the thermal energy at room temperature, whereby the luminescence properties of the segment remain constant without quenching from cryogenic temperatures up to room temperature.
摘要翻译： 在硅衬底上形成例如III-V族半导体材料的纳米晶须的方法包括：通过HF蚀刻来制备硅衬底的表面，包括钝化衬底表面，使得衬底表面基本上原子上平坦 。 基底表面上的催化颗粒由气溶胶沉积; 将基板退火; 并且用于MOVPE工艺的气体被引入到衬底周围的气氛中，使得纳米晶须通过VLS机制生长。 在生长的纳米晶须中，将基板的晶体方向转移到纳米晶须的基部并与基板表面相邻的外延晶体平面。 光学活性材料的一段可以形成在纳米晶须内并且由异质结界定，以便产生量子阱，其中量子阱的高度远大于室温下的热能，由此该段的发光特性保持 恒定，不会从低温至室温淬火。
-
公开(公告)号：US08357954B2
公开(公告)日：2013-01-22
申请号：US13108232
申请日：2011-05-16
IPC分类号： H01L29/06
CPC分类号： C30B11/12 , B82Y30/00 , C30B25/005 , C30B29/40 , C30B29/48 , C30B29/60 , C30B29/605 , H01L21/02381 , H01L21/02543 , H01L21/02546 , H01L21/02551 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L33/0066 , Y10S977/762 , Y10S977/815 , Y10S977/89 , Y10S977/891
摘要： A method for forming a nanowhisker of, e.g., a III-V semiconductor material on a silicon substrate, comprises: preparing a surface of the silicon substrate with measures including passivating the substrate surface by HF etching, so that the substrate surface is essentially atomically flat. Catalytic particles on the substrate surface are deposited from an aerosol; the substrate is annealed; and gases for a MOVPE process are introduced into the atmosphere surrounding the substrate, so that nanowhiskers are grown by the VLS mechanism. In the grown nanowhisker, the crystal directions of the substrate are transferred to the epitaxial crystal planes at the base of the nanowhisker and adjacent the substrate surface. A segment of an optically active material may be formed within the nanowhisker and bounded by heterojunctions so as to create a quantum well wherein the height of the quantum well is much greater than the thermal energy at room temperature, whereby the luminescence properties of the segment remain constant without quenching from cryogenic temperatures up to room temperature.
-
-
-
-
-
搜索结果
6 条记录 (耗时 0.029 秒)
