Method and apparatus for combustion-enhanced vaporization
    4.
    发明授权
    Method and apparatus for combustion-enhanced vaporization 失效
    燃烧增强蒸发的方法和装置

    公开(公告)号:US06374642B1

    公开(公告)日:2002-04-23

    申请号:US09526024

    申请日:2000-03-15

    IPC分类号: C03B2000

    摘要: An apparatus for producing a glass soot includes a first a burner having a droplet-emitting first region, a gas-emitting second region surrounding the first region, and a gas-emitting third region surrounding the second region. The first region emits a glass-forming mixture, the second region emits an inert gas, and the third region emits a combination of oxygen and a combustible gas. The apparatus further includes a combustion area having a first section proximate the first burner and a second section distal from the first burner. A glass-forming mixture is at least partially vaporized in the first section of the combustion area. The apparatus further includes at least one secondary burner having gas-emitting fourth and fifth regions. The fourth region of the secondary burner emits oxygen and the fifth region of the secondary burner emits a combustible gas. The second section of the conversion area is in communication with the fourth and fifth regions of the secondary burner, such that the glass-forming mixture is completely vaporized and converted into a glass soot deposited on a preform such as a bait rod. The invention also includes a method of enhanced vaporization using first and second spaced apart combustion areas.

    摘要翻译: 一种用于生产玻璃烟灰的设备包括:具有液滴发射第一区域的第一燃烧器,围绕第一区域的气体发射第二区域和围绕第二区域的气体发射第三区域。 第一区域发射玻璃形成混合物,第二区域发射惰性气体,第三区域发射氧气和可燃气体的组合。 该装置还包括具有靠近第一燃烧器的第一部分和远离第一燃烧器的第二部分的燃烧区域。 玻璃形成混合物在燃烧区域的第一部分中至少部分蒸发。 该装置还包括具有气体发射的第四和第五区域的至少一个二次燃烧器。 次级燃烧器的第四区域发射氧气,而第二燃烧器的第五区域发射可燃气体。 转换区域的第二部分与辅助燃烧器的第四和第五区域连通,使得玻璃形成混合物完全蒸发并转化成沉积在诸如诱饵棒的预成型体上的玻璃烟灰。 本发明还包括使用第一和第二间隔开的燃烧区域增强蒸发的方法。

    Film coated optical lithography elements and method of making
    5.
    发明授权
    Film coated optical lithography elements and method of making 有权
    薄膜涂层光刻元件及其制作方法

    公开(公告)号:US06466365B1

    公开(公告)日:2002-10-15

    申请号:US09567725

    申请日:2000-05-10

    IPC分类号: G02B1314

    摘要: The invention provides coated optical lithography elements and methods of coating optical elements, and particularly optical photolithography elements for use in below 240 nm optical photolithography systems utilizing vacuum ultraviolet light (VUV) lithography wavelengths no greater than about 193 nm, such as VUV projection lithography systems utilizing wavelengths in the 193 nm or 157 nm region. The optical devices manipulate vacuum ultraviolet lithography light less than 250 nm utilizing a deposited silicon oxyfluoride film. The deposited silicon oxyfluoride optical coating assists in the manipulation of incident light and protects the underlying optical materials, layers, and surfaces.

    摘要翻译: 本发明提供涂覆光学光刻元件和涂覆光学元件的方法,特别是用于使用不大于约193nm的真空紫外光(VUV)光刻波长的240nm以下的光学光刻系统的光学光刻元件,例如VUV投影光刻系统 利用193nm或157nm区域中的波长。 光学器件利用沉积的氟氧化硅膜操纵小于250nm的真空紫外光刻光。 沉积的氟氧化硅光学涂层有助于对入射光的操纵并保护底层的光学材料,层和表面。

    Film coated optical lithography elements and method of making
    6.
    发明授权
    Film coated optical lithography elements and method of making 有权
    薄膜涂层光刻元件及其制作方法

    公开(公告)号:US06833949B2

    公开(公告)日:2004-12-21

    申请号:US10238099

    申请日:2002-09-09

    IPC分类号: G02B1314

    摘要: The invention provides coated optical lithography elements and methods of coating optical elements, and particularly optical photolithography elements for use in below 240 nm optical photolithography systems utilizing vacuum ultraviolet light (VUV) lithography wavelengths no greater than about 193 nm, such as VUV projection lithography systems utilizing wavelengths in the 193 nm or 157 nm region. The optical devices manipulate vacuum ultraviolet lithography light less than 250 nm utilizing a deposited silicon oxyfluoride film. The deposited silicon oxyfluoride optical coating assists in the manipulation of incident light and protects the underlying optical materials, layers, and surfaces.

    摘要翻译: 本发明提供涂覆光学光刻元件和涂覆光学元件的方法,特别是用于使用不大于约193nm的真空紫外光(VUV)光刻波长的240nm以下的光学光刻系统的光学光刻元件,例如VUV投影光刻系统 利用193nm或157nm区域中的波长。 光学器件利用沉积的氟氧化硅膜操纵小于250nm的真空紫外光刻光。 沉积的氟氧化硅光学涂层有助于对入射光的操纵并保护底层的光学材料,层和表面。

    Oxygen doping of silicon oxyfluoride glass
    7.
    发明授权
    Oxygen doping of silicon oxyfluoride glass 失效
    氟氧化硅玻璃的氧掺杂

    公开(公告)号:US06502426B2

    公开(公告)日:2003-01-07

    申请号:US09997782

    申请日:2001-11-28

    IPC分类号: C03B3200

    摘要: High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a “dry,” silicon oxyfluoride glass which contains doped O2 molecules and which exhibits very high transmittance and laser transmission durability in the vacuum ultraviolet (VUV) wavelength region. In addition to containing fluorine and having little or no OH content, the inventive silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm contains intersticial O2 molecules which provide improved endurance to laser exposure. Preferably the O2 doped silicon oxyfluoride glass is characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.

    摘要翻译: 公开了适用于在低于190nm的VUV波长区域中用于光刻应用的光掩模基板的高纯度氟氧化硅玻璃。 本发明的氟氧化硅玻璃在157nm波长下是透射的,使其特别适用于157nm波长区域的光掩模衬底。 本发明的光掩模衬底是含有掺杂的O 2分子并且在真空紫外(VUV)波长区域中显示非常高的透射率和激光透射耐久性的“干式”氟氧化硅玻璃。 除了含氟并且具有很少或不具有OH含量之外,本发明的适用于157nm的光掩模衬底的氟氧化硅玻璃含有间隔的O 2分子,其提供了对激光曝光的改善的耐久性。 优选地,掺杂氧的氟氧化硅玻璃的特征在于具有小于1×10 17分子/ cm 3的分子氢和低氯水平。

    Vacuum ultraviolet transmitting silicon oxyfluoride lithography glass
    10.
    发明授权
    Vacuum ultraviolet transmitting silicon oxyfluoride lithography glass 失效
    真空紫外透射硅氧氟硅光刻玻璃

    公开(公告)号:US06242136B1

    公开(公告)日:2001-06-05

    申请号:US09397573

    申请日:1999-09-16

    IPC分类号: G03F900

    摘要: High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a “dry,” silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.

    摘要翻译: 公开了适用于在低于190nm的VUV波长区域中用于光刻应用的光掩模基板的高纯度氟氧化硅玻璃。 本发明的氟氧化硅玻璃在157nm波长下是透射的,使其特别适用于157nm波长区域的光掩模衬底。 本发明的光掩模基材是“真空”的氟氧化硅玻璃,其在真空紫外(VUV)波长区域中表现出非常高的透射率,同时保持通常与高纯度熔融石英相关的优异的热和物理性能。 除了含氟并且具有很少或不含OH含量之外,本发明的适合用作157nm的光掩模衬底的氟氧化硅玻璃的特征还在于具有小于1×10 17分子/ cm 3的分子氢和低氯水平。