摘要:
A method of forming an alkali metal oxide-doped optical fiber by diffusing an alkali metal into a surface of a glass article is disclosed. The silica glass article may be in the form of a tube or a rod, or a collection of tubes or rods. The silica glass article containing the alkali metal, and impurities that may have been unintentionally diffused into the glass article, is etched to a depth sufficient to remove the impurities. The silica glass article may be further processed to form a complete optical fiber preform. The preform, when drawn into an optical fiber, exhibits a low attenuation.
摘要:
High purity direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive direct deposit vitrified silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a dry direct deposit vitrified silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.
摘要:
High purity direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive direct deposit vitrified silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a dry direct deposit vitrified silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.
摘要翻译:公开了适用于在190nm以下的VUV波长区域中用于光刻应用的光掩模基板的高纯度直接沉积玻璃化硅氧氟化物玻璃。 本发明的直接沉积玻璃化硅氧氟化物玻璃在157nm波长附近是透射的,使其特别适用于157nm波长区域的光掩模衬底。 本发明的光掩模基材是在真空紫外(VUV)波长区域中显示非常高的透射率的干直接沉积玻璃化硅氧氟化物玻璃,同时保持通常与高纯度熔融二氧化硅相关的优异的热和物理性能。 除了含氟并且具有很少或不具有OH含量之外,本发明的适用于157nm的光掩模衬底的玻璃化玻璃化氟氧化硅玻璃的特征还在于具有小于1×10 17分子/ cm 3的分子 氢和低氯水平。
摘要:
An apparatus for producing a glass soot includes a first a burner having a droplet-emitting first region, a gas-emitting second region surrounding the first region, and a gas-emitting third region surrounding the second region. The first region emits a glass-forming mixture, the second region emits an inert gas, and the third region emits a combination of oxygen and a combustible gas. The apparatus further includes a combustion area having a first section proximate the first burner and a second section distal from the first burner. A glass-forming mixture is at least partially vaporized in the first section of the combustion area. The apparatus further includes at least one secondary burner having gas-emitting fourth and fifth regions. The fourth region of the secondary burner emits oxygen and the fifth region of the secondary burner emits a combustible gas. The second section of the conversion area is in communication with the fourth and fifth regions of the secondary burner, such that the glass-forming mixture is completely vaporized and converted into a glass soot deposited on a preform such as a bait rod. The invention also includes a method of enhanced vaporization using first and second spaced apart combustion areas.
摘要:
The invention provides coated optical lithography elements and methods of coating optical elements, and particularly optical photolithography elements for use in below 240 nm optical photolithography systems utilizing vacuum ultraviolet light (VUV) lithography wavelengths no greater than about 193 nm, such as VUV projection lithography systems utilizing wavelengths in the 193 nm or 157 nm region. The optical devices manipulate vacuum ultraviolet lithography light less than 250 nm utilizing a deposited silicon oxyfluoride film. The deposited silicon oxyfluoride optical coating assists in the manipulation of incident light and protects the underlying optical materials, layers, and surfaces.
摘要:
The invention provides coated optical lithography elements and methods of coating optical elements, and particularly optical photolithography elements for use in below 240 nm optical photolithography systems utilizing vacuum ultraviolet light (VUV) lithography wavelengths no greater than about 193 nm, such as VUV projection lithography systems utilizing wavelengths in the 193 nm or 157 nm region. The optical devices manipulate vacuum ultraviolet lithography light less than 250 nm utilizing a deposited silicon oxyfluoride film. The deposited silicon oxyfluoride optical coating assists in the manipulation of incident light and protects the underlying optical materials, layers, and surfaces.
摘要:
High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a “dry,” silicon oxyfluoride glass which contains doped O2 molecules and which exhibits very high transmittance and laser transmission durability in the vacuum ultraviolet (VUV) wavelength region. In addition to containing fluorine and having little or no OH content, the inventive silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm contains intersticial O2 molecules which provide improved endurance to laser exposure. Preferably the O2 doped silicon oxyfluoride glass is characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.
摘要翻译:公开了适用于在低于190nm的VUV波长区域中用于光刻应用的光掩模基板的高纯度氟氧化硅玻璃。 本发明的氟氧化硅玻璃在157nm波长下是透射的,使其特别适用于157nm波长区域的光掩模衬底。 本发明的光掩模衬底是含有掺杂的O 2分子并且在真空紫外(VUV)波长区域中显示非常高的透射率和激光透射耐久性的“干式”氟氧化硅玻璃。 除了含氟并且具有很少或不具有OH含量之外,本发明的适用于157nm的光掩模衬底的氟氧化硅玻璃含有间隔的O 2分子,其提供了对激光曝光的改善的耐久性。 优选地,掺杂氧的氟氧化硅玻璃的特征在于具有小于1×10 17分子/ cm 3的分子氢和低氯水平。
摘要:
High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed with the silicon oxyfluoride glass having a preferred fluorine content
摘要翻译:公开了具有优选氟含量<0.5重量%的氟氧化硅玻璃,适合用作光刻应用中的低于190nm的VUV波长区域的光掩模基板的高纯度氟氧化硅玻璃。 本发明的氟氧化硅玻璃在157nm波长下是透射的,使其特别适用于157nm波长区域的光掩模衬底。 本发明的光掩模基材是“真空”的氟氧化硅玻璃,其在真空紫外(VUV)波长区域中表现出非常高的透射率,同时保持通常与高纯度熔融石英相关的优异的热和物理性能。 除了含氟并且具有很少或不具有OH含量之外,本发明的适合用作157nm的光掩模衬底的氟氧化硅玻璃的特征还在于具有小于1×10 17分子/ cm 3的分子氢和低 氯水平。
摘要:
The present invention discloses novel methods for fabricating glass articles, particularly optical fiber glass preforms, which may contain alumina, yttrium, lanthanum, erbium, or other rare earth metals as dopants. The glass articles made in accordance with the present invention exhibit radially uniform dopant profiles relative to conventional dopant methods. In addition, the overall concentration of the dopant is increased relative to analogous dopant methods.
摘要:
High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a “dry,” silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.
摘要翻译:公开了适用于在低于190nm的VUV波长区域中用于光刻应用的光掩模基板的高纯度氟氧化硅玻璃。 本发明的氟氧化硅玻璃在157nm波长下是透射的,使其特别适用于157nm波长区域的光掩模衬底。 本发明的光掩模基材是“真空”的氟氧化硅玻璃,其在真空紫外(VUV)波长区域中表现出非常高的透射率,同时保持通常与高纯度熔融石英相关的优异的热和物理性能。 除了含氟并且具有很少或不含OH含量之外,本发明的适合用作157nm的光掩模衬底的氟氧化硅玻璃的特征还在于具有小于1×10 17分子/ cm 3的分子氢和低氯水平。