-
公开(公告)号：US20090174359A1
公开(公告)日：2009-07-09
申请号：US12391947
申请日：2009-02-24
IPC分类号： H02P1/44
CPC分类号： H02P1/42
摘要： A method and a circuit for controlling a triac intended to be series-connected with a resistive element of positive temperature coefficient or a capacitive element, and a winding for starting an asynchronous motor, for supply by an A.C. voltage, the present invention including the steps of: detecting a voltage representative of the voltage across the series connection of the element and of the triac; comparing this detected voltage with respect to a threshold; and blocking a turning back on of the triac when the threshold has been exceeded.
摘要翻译： 一种用于控制旨在与正温度系数的电阻元件串联连接的三端双向可控硅开关元件或电容元件的电路，以及用于启动异步电动机的绕组，用于由AC电压供电，本发明包括步骤 ：检测表示元件和三端双向可控硅开关元件的串联连接上的电压的电压; 将该检测到的电压相对于阈值进行比较; 并且当超过阈值时阻止三端双向可控硅开关的反转。
-
公开(公告)号：US08004231B2
公开(公告)日：2011-08-23
申请号：US12391947
申请日：2009-02-24
IPC分类号： H02P1/16
CPC分类号： H02P1/42
摘要： A method and a circuit for controlling a triac intended to be series-connected with a resistive element of positive temperature coefficient or a capacitive element, and a winding for starting an asynchronous motor, for supply by an A.C. voltage, the present invention including the steps of: detecting a voltage representative of the voltage across the series connection of the element and of the triac; comparing this detected voltage with respect to a threshold; and blocking a turning back on of the triac when the threshold has been exceeded.
摘要翻译： 一种用于控制旨在与正温度系数的电阻元件串联连接的三端双向可控硅开关元件或电容元件的电路，以及用于启动异步电动机的绕组，用于由AC电压供电，本发明包括步骤 ：检测表示元件和三端双向可控硅开关元件的串联连接上的电压的电压; 将该检测到的电压相对于阈值进行比较; 并且当超过阈值时阻止三端双向可控硅开关的反转。
-
公开(公告)号：US06818927B2
公开(公告)日：2004-11-16
申请号：US10182540
申请日：2002-07-25
申请人： Jean-Michel Simonnet
发明人： Jean-Michel Simonnet
IPC分类号： H01L2974
CPC分类号： H01L29/747
摘要： A monolithic bidirectional switch formed in a semiconductor substrate of type N, including a first main vertical thyristor, the rear surface layer of which is of type P, a second main vertical thyristor, the rear surface layer of which is of type N, an auxiliary vertical thyristor, the rear surface layer of which is of type P and is common with that of the first main thyristor, a peripheral region of type P especially connecting the rear surface layer of the auxiliary thyristor to the layer of this thyristor located on the other side of the substrate, a first metallization on the rear surface side, a second metallization on the front surface side connecting the front surface layers of the first and second thyristors. An additional region has a function of isolating the rear surface of the auxiliary thyristor and the first metallization.
摘要翻译： 本发明涉及一种形成在N型半导体衬底中的双向开关，其包括第一主垂直晶闸管，其背面层为P型导电，第二主垂直晶闸管的背面层为N型，P 型外围区域，从前表面延伸到后表面，覆盖后表面的第一金属化层，连接第一和第二晶闸管的前面层的正面侧的第二金属化层和连接第一和第二晶闸管的N面栅极区域 周边区域的上表面的一部分。
-
公开(公告)号：US06593600B1
公开(公告)日：2003-07-15
申请号：US09634076
申请日：2000-08-08
IPC分类号： H01L2974
CPC分类号： H01L29/747
摘要： A monolithic bidirectional switch formed in a semiconductor substrate of type N, including a first main vertical thyristor, the rear surface layer of which is of type P, a second main vertical thyristor, the rear surface layer of which is of type N, an auxiliary vertical thyristor, the rear surface layer of which is of type P and is common with that of the first main thyristor, a peripheral region of type P especially connecting the rear surface layer of the auxiliary thyristor to the layer of this thyristor located on the other side of the substrate, a first metallization on the rear surface side, a second metallization on the front surface side connecting the front surface layers of the first and second thyristors. An additional region has a function of isolating the rear surface of the auxiliary thyristor and the first metallization.
摘要翻译： 形成在N型半导体衬底中的单片双向开关，包括其表面层为P型的第一主垂直晶闸管，后表面为N型的第二主垂直晶闸管，辅助 垂直晶闸管的后表面层为P型，与第一主晶闸管相同，P型周边区域特别将辅助晶闸管的背面层与位于另一侧的该晶闸管的层连接 在第一和第二晶闸管的前表面层连接前表面侧上的第二金属化层。 附加区域具有隔离辅助晶闸管的后表面和第一金属化的功能。
-
公开(公告)号：US08269252B2
公开(公告)日：2012-09-18
申请号：US12059600
申请日：2008-03-31
IPC分类号： H01L29/72
CPC分类号： H01L29/8611 , H01L21/76264 , H01L27/0251 , H01L27/0814 , H01L27/1203 , H01L29/06
摘要： A structure including at least two neighboring components, capable of operating at high frequencies, formed in a thin silicon substrate extending on a silicon support and separated therefrom by an insulating layer, the components being laterally separated by insulating regions. The silicon support has, at least in the vicinity of its portion in contact with the insulating layer, a resistivity greater than or equal to 1,000 ohms.cm.
摘要翻译： 包括至少两个能够以高频工作的相邻部件的结构形成在硅衬底上延伸并且由绝缘层分离的薄硅衬底中，所述部件被绝缘区横向隔开。 硅载体至少在与绝缘层接触的部分附近具有大于或等于1,000欧姆·厘米的电阻率。
-
公开(公告)号：US20080237785A1
公开(公告)日：2008-10-02
申请号：US12059600
申请日：2008-03-31
IPC分类号： H01L27/02
CPC分类号： H01L29/8611 , H01L21/76264 , H01L27/0251 , H01L27/0814 , H01L27/1203 , H01L29/06
摘要： A structure including at least two neighboring components, capable of operating at high frequencies, formed in a thin silicon substrate extending on a silicon support and separated therefrom by an insulating layer, the components being laterally separated by insulating regions. The silicon support has, at least in the vicinity of its portion in contact with the insulating layer, a resistivity greater than or equal to 1,000 ohms.cm.
摘要翻译： 包括至少两个能够以高频工作的相邻部件的结构形成在硅衬底上延伸并且由绝缘层分离的薄硅衬底中，所述部件被绝缘区横向隔开。 硅载体至少在与绝缘层接触的部分附近具有大于或等于1,000欧姆·厘米的电阻率。
-
公开(公告)号：US06921930B2
公开(公告)日：2005-07-26
申请号：US10182541
申请日：2001-12-20
申请人： Jean-Michel Simonnet
发明人： Jean-Michel Simonnet
IPC分类号： H01L29/747 , H01L29/74 , H01L31/111
CPC分类号： H01L29/747
摘要： The invention concerns a bidirectional electronic switch of the pulse-controlled bistable type comprising a monolithic semiconductor circuit including a vertical bidirectional switch structure (TR; ACS) provided with a gate terminal (G1), first (Th1) and second (Th2) thyristor structures whereof the anodes are formed on the front face side, the first thyristor anode region containing a supplementary P-type region (6), and a metallization (A1, A2) connected to the main surface of the front face of the vertical bidirectional component and to the second thyristor anode; a capacitor (C) connected to the first thyristor anode and to the second thyristor supplementary N-type region; and a switch (SW) for short-circuiting the capacitor.
摘要翻译： 本发明涉及一种脉冲控制双稳态双向电子开关，包括一个单片半导体电路，该单片半导体电路包括一个垂直双向开关结构（TR; ACS），它具有一个栅极端子（G 1），第一个（Th 1）和第二个 ）晶闸管结构，其阳极形成在正面侧，第一晶闸管阳极区域包含辅助P型区域（6），以及金属化层（A 1，A 2），其连接到正面的主表面 垂直双向分量和第二晶闸管阳极; 连接到第一晶闸管阳极和第二晶闸管补充N型区域的电容器（C）; 以及用于短路电容器的开关（SW）。
-
公开(公告)号：US06674148B1
公开(公告)日：2004-01-06
申请号：US09428013
申请日：1999-10-27
申请人： Eric Bernier , Jean-Michel Simonnet
发明人： Eric Bernier , Jean-Michel Simonnet
IPC分类号： H01L3111
CPC分类号： H01L27/0814 , H01L29/735 , H01L29/7436
摘要： A method for adjusting the gain or the sensitivity of a lateral component formed in the front surface of a semiconductor wafer, having a first conductivity type, includes not doping or overdoping, according to the first conductivity type, the back surface when it is desired to reduce the gain or sensitivity of the lateral component, and doping according to the second conductivity type, the back surface, when the gain or the sensitivity of the lateral component is to be increased.
摘要翻译： 用于调整形成在具有第一导电类型的半导体晶片的前表面中的侧向部件的增益或灵敏度的方法包括根据第一导电类型，当期望的情况下的背面不掺杂或过度掺杂 降低横向分量的增益或灵敏度，并且当要增加侧向分量的增益或灵敏度时，根据第二导电类型（背面）掺杂。
-
公开(公告)号：US06479841B1
公开(公告)日：2002-11-12
申请号：US09705113
申请日：2000-11-02
申请人： Jean-Michel Simonnet
发明人： Jean-Michel Simonnet
IPC分类号： H01L2900
CPC分类号： H01L29/747 , H01L29/7404
摘要： A detector of the state (on or off) of a vertical power component formed in a lightly-doped semiconductor substrate of a first conductivity type having a front surface and a rear surface. The region corresponding to the power component is surrounded with an isolating wall of opposite type to that of the substrate. This state detector is formed outside of said region and is formed with a vertical detection component, the state of which is switched by parasitic charges propagating outside of the isolating wall when the power component is on.
摘要翻译： 形成在具有前表面和后表面的第一导电类型的轻掺杂半导体衬底中的垂直功率部件的状态（开或关）的检测器。 对应于功率分量的区域被与衬底相反的隔离壁包围。 该状态检测器形成在所述区域外部，并且形成有垂直检测部件，当功率部件接通时，其状态由在隔离壁外部传播的寄生电荷切换。
-
公开(公告)号：US06252451B1
公开(公告)日：2001-06-26
申请号：US09375858
申请日：1999-08-17
IPC分类号： H03K1772
CPC分类号： H03K17/16 , H03K17/732
摘要： A one-way switching circuit of the type including a gate tun-off thyristor biased to be normally on, further includes, between the gate and a supply line, a capacitor and a controllable switch connected in parallel.
摘要翻译： 这种类型的单向开关电路包括被偏置为通常导通的栅极截止晶闸管，还包括在栅极和电源线之间，并联连接的电容器和可控开关。
-
-
-
-
-
-
-
-
-
搜索结果
14 条记录 (耗时 0.016 秒)
