Switching aid circuit for a logic circuit
    2.
    发明授权
    Switching aid circuit for a logic circuit 有权
    用于逻辑电路的开关辅助电路

    公开(公告)号:US06882180B2

    公开(公告)日:2005-04-19

    申请号:US10415461

    申请日:2001-10-30

    IPC分类号: H03K5/1534 H03K19/013

    CPC分类号: H03K19/0136 H03K5/1534

    摘要: The invention concerns a switching circuit (20) adapted to generate a pulse when there occurs a rising edge of a signal applied on an input terminal (CTRL), comprising: a first NPN type bipolar transistor (TN2) whereof the transmitter is connected to the input terminal; a second transistor (TP2) whereof a control electrode is connected, through a first resistor (Re2), to the input terminal, the base of the first transistor being connected to a supply potential (VDD) by the second transistor in series with a second resistor (Rp2); and a third transistor (TN3) connecting an output terminal (22) of the switching circuit to a reference potential (GND) and whereof a control electrode is connected to the collector of the first transistor (TN2).

    摘要翻译: 本发明涉及一种适于在发生施加在输入端(CTRL)上的信号的上升沿产生脉冲的开关电路(20),包括:第一NPN型双极晶体管(TN2),其中发射器连接到 输入端; 控制电极通过第一电阻器(Re 2)连接到输入端子的第二晶体管(TP2),第一晶体管的基极与第二晶体管的电源电位(VDD)串联连接 第二电阻器(Rp 2); 以及将开关电路的输出端子(22)连接到基准电位(GND)的第三晶体管(TN 3),并且其控制电极连接到第一晶体管(TN2)的集电极。

    &dgr;-sarcoglycan antibodies
    3.
    发明授权
    &dgr;-sarcoglycan antibodies 失效
    δ-糖聚糖抗体

    公开(公告)号:US06211340B1

    公开(公告)日:2001-04-03

    申请号:US09119827

    申请日:1998-07-21

    IPC分类号: C07K1618

    CPC分类号: C07K14/4707

    摘要: Disclosed herein is a substantially pure nucleic acid sequence encoding a mammalian 35 kDa non-dystrophin component (&dgr;-sarcoglycan) of the dystrophin-glycoprotein complex. Also disclosed are the amino acid sequence and an immunogenic peptide of &dgr;-sarcoglycan. The peptide when used to immunize a mammal, stimulates the production of antibodies which bind specifically to the &dgr;-sarcoglycan. Methods to identify mutations in the &dgr;-sarcoglycan gene associated with autosomal recessive limb-girdle muscular dystrophy are also disclosed. The identification of such mutations enables the design of nucleic acid probes which hybridize specifically to a mutant form of &dgr;-sarcoglycan, or the complement thereof, but not to the DNA of the wild-type form of the gene (or the complement thereof), under stringent hybridization conditions. Such probes are useful, for example, in connection with the diagnosis of autosomal recessive limb-girdle muscular dystrophy. In addition, the identification of such mutations enables the diagnosis of autosomal recessive limb-girdle muscular dystrophy through the use of direct DNA sequencing techniques.

    摘要翻译: 本文公开了编码肌营养不良蛋白 - 糖蛋白复合物的哺乳动物35kDa非肌营养不良蛋白成分(δ-莽草酸)的基本上纯的核酸序列。 还公开了δ-色氨酸的氨基酸序列和免疫原性肽。 当肽用于免疫哺乳动物时,刺激产生与δ-糖聚糖特异性结合的抗体。 还公开了鉴定与常染色体隐性遗传性肢体肌营养不良症相关的δ-色氨酸聚糖基因突变的方法。 这种突变的鉴定使得能够设计特异性地与δ-色氨酸聚糖或其互补体的突变形式杂交的核酸探针,而不与野生型形式的基因(或其互补物)的DNA杂交, 在严格的杂交条件下。 这样的探针可用于例如与常染色体隐性性腰带肌营养不良症的诊断有关。 此外,通过使用直接DNA测序技术,鉴定这种突变能够诊断常染色体隐性的腰带肌营养不良症。

    Polynucleotides encoding novel cysteine proteases of the calpain superfamily, CAN-12v1 and CAN-12v2.
    4.
    发明授权
    Polynucleotides encoding novel cysteine proteases of the calpain superfamily, CAN-12v1 and CAN-12v2. 有权
    编码钙蛋白酶超家族,CAN-12v1和CAN-12v2的新型半胱氨酸蛋白酶的多核苷酸。

    公开(公告)号:US07186564B2

    公开(公告)日:2007-03-06

    申请号:US10116519

    申请日:2002-04-03

    摘要: The present invention provides novel polynucleotides encoding CAN-12 polypeptides, fragments and homologues thereof. The present invention also provides polynucleotides encoding variants of CAN-12 polypeptides, CAN-12v1 and CAN-12v2. Also provided are vectors, host cells, antibodies, and recombinant and synthetic methods for producing said polypeptides. The invention further relates to diagnostic and therapeutic methods for applying these novel CAN-12, CAN-12v1, and CAN-12v2 polypeptides to the diagnosis, treatment, and/or prevention of various diseases and/or disorders related to these polypeptides, particularly neuro- and musculo-degenerative conditions. The invention further relates to screening methods for identifying agonists and antagonists of the polynucleotides and polypeptides of the present invention.

    摘要翻译: 本发明提供编码CAN-12多肽的新型多核苷酸,其片段和同系物。 本发明还提供编码CAN-12多肽,CAN-12v1和CAN-12v2变体的多核苷酸。 还提供了载体,宿主细胞,抗体以及用于产生所述多肽的重组和合成方法。 本发明还涉及将这些新型CAN-12,CAN-12v1和CAN-12v2多肽应用于诊断,治疗和/或预防与这些多肽相关的各种疾病和/或病症的诊断和治疗方法,特别是神经 - 和肌肉退行性疾病。 本发明还涉及用于鉴定本发明的多核苷酸和多肽的激动剂和拮抗剂的筛选方法。

    Pulsed bistable bidirectional electronic switch
    5.
    发明授权
    Pulsed bistable bidirectional electronic switch 有权
    双脉冲双向电子开关

    公开(公告)号:US06963087B2

    公开(公告)日:2005-11-08

    申请号:US10221851

    申请日:2001-12-28

    IPC分类号: H01L29/747 H01L29/417

    CPC分类号: H01L29/747

    摘要: The invention concerns a pulsed bistable bidirectional electronic switch comprising a monolithic semiconductor circuit formed from a substrate (1) whereof the rear surface (A2) is coated with a metallization connected to earth. Said circuit comprises a vertical bidirectional switch (T1, T2) provided with a first gate terminal (M3), whereof the main electrode (A1) on the side of the front surface is connected to a load and an alternating current supply; a horizontal thyristor (T3) comprising an upper layer (4) of the vertical bidirectional switch, a first P-type region (11), and a second N-type region (12) formed in the first region; a second gate terminal (G1) connected to one of the first and second regions, the other being connected to earth. A capacitor (C) is connected to the first gate terminal (G3) and to the alternating current supply (VAC).

    摘要翻译: 本发明涉及一种脉冲双稳态双向电子开关,其包括由基板(1)形成的单片半导体电路,其中后表面(A 2)涂覆有连接到地球的金属化层。 所述电路包括设置有第一栅极端子(M 3)的垂直双向开关(T 1,T 2),其前表面侧的主电极(A 1)连接到负载和交流电源 ; 包括垂直双向开关的上层(4)的水平晶闸管(T 3),形成在第一区域中的第一P型区域(11)和第二N型区域(12) 连接到第一和第二区域中的一个的第二栅极端子(G 1),另一个连接到地球。 电容器(C)连接到第一栅极端子(G 3)和交流电源(VAC)。

    Insulating wall between power components
    6.
    发明授权
    Insulating wall between power components 有权
    功率元件之间的绝缘墙

    公开(公告)号:US06559515B1

    公开(公告)日:2003-05-06

    申请号:US09391636

    申请日:1999-09-07

    申请人: Franck Duclos

    发明人: Franck Duclos

    IPC分类号: H01L2900

    CPC分类号: H01L27/0814 H01L21/761

    摘要: An insulating wall of a second conductivity type intended for separating elementary components formed in different wells of a semiconductive layer of a first conductivity type, a component located in one at least one of the wells being capable of operating with a high current density. The insulating wall includes at least two elementary insulating walls separated by a portion of the wafer material and, in operation, this portion is connected to a reference potential.

    摘要翻译: 第二导电类型的绝缘壁,用于分离形成在第一导电类型的半导体层的不同阱中的元素,位于一个至少一个阱中的元件能够以高电流密度操作。 绝缘壁包括由晶片材料的一部分分开的至少两个基本绝缘壁,并且在操作中,该部分连接到参考电位。

    Bidirectional switch with increased switching breakdown voltage
    7.
    发明授权
    Bidirectional switch with increased switching breakdown voltage 有权
    双向开关具有增加的开关击穿电压

    公开(公告)号:US06380565B1

    公开(公告)日:2002-04-30

    申请号:US09634077

    申请日:2000-08-08

    IPC分类号: H01L29747

    CPC分类号: H01L29/747

    摘要: A monolithic bidirectional switch formed in a semiconductor substrate of a first conductivity type having a front surface and a rear surface, including a first main vertical thyristor, the rear surface layer of which is of the second conductivity type, a second main vertical thyristor, the rear surface layer of which is of the first conductivity type. A structure for triggering each of the first and second main thyristors is arranged to face regions mutually distant from the two main thyristors, the neighboring portions of which correspond to a region for which, for the first main thyristor, a short-circuit area between cathode and cathode gate is formed.

    摘要翻译: 一种形成在具有前表面和后表面的第一导电类型的半导体衬底中的单片双向开关,包括第一主垂直晶闸管,其第二导电类型的后表面层,第二主垂直晶闸管, 其后表面层是第一导电类型。 用于触发第一和第二主晶闸管中的每一个的结构被布置成面对与两个主晶闸管相互远离的区域,其相邻部分对应于对于第一主晶闸管,阴极之间的短路面积 并形成阴极栅极。

    Zero crossing control structure for a bidirectional switch with a stable threshold
    8.
    发明授权
    Zero crossing control structure for a bidirectional switch with a stable threshold 有权
    具有稳定阈值的双向开关的过零点控制结构

    公开(公告)号:US06369640B1

    公开(公告)日:2002-04-09

    申请号:US09628199

    申请日:2000-07-28

    IPC分类号: H03K1713

    CPC分类号: H02M1/083 H03K17/136

    摘要: A zero crossing control circuit of a bidirectional switch including two transistors of complementary types connected in parallel between the gate of the bidirectional switch and the main reference terminal of the bidirectional switch, the gate of the bidirectional switch being connected to a control source via a first resistor, and each of the control terminals of the transistors being connected to the second main terminal of the bidirectional switch via a second resistor of high value, a zener diode being interposed between the second resistor and each of the control terminals according to a biasing adapted to turning on each of the transistors when the zener threshold is exceeded.

    摘要翻译: 一种双向开关的过零点控制电路,包括双向开关的栅极与双向开关的主参考端并联连接的两个互补型晶体管,双向开关的栅极经由第一 电阻器,并且晶体管的每个控制端子经由高值的第二电阻器连接到双向开关的第二主端子,齐纳二极管根据偏压适配于介于第二电阻器和每个控制端子之间 当超过齐纳阈值时,开启每个晶体管。

    Device having a low threshold voltage for protection against
electrostatic discharges
    10.
    发明授权
    Device having a low threshold voltage for protection against electrostatic discharges 有权
    具有低阈值电压的器件,用于防止静电放电

    公开(公告)号:US5994760A

    公开(公告)日:1999-11-30

    申请号:US176418

    申请日:1998-10-21

    申请人: Franck Duclos

    发明人: Franck Duclos

    摘要: The present invention relates to an assembly of two pairs of diodes in a single semiconductor substrate of a first type of conductivity, the first pair including a first diode in series with a second diode, the second pair including a third diode in series with a fourth diode, the two pairs of diodes being arranged in parallel. Each of the first and third diodes includes neighboring regions of distinct types of conductivity formed in a lightly-doped well of the second type of conductivity, these wells being separated; each of the second and fourth diodes includes separated regions of distinct types of conductivity; and metallizations connect the electrodes of the diodes to form the desired series-to-parallel assembly.

    摘要翻译: 本发明涉及在第一种导电类型的单个半导体衬底中的两对二极管的组件,第一对包括与第二二极管串联的第一二极管,第二对包括与第四导体串联的第三二极管 二极管,两对二极管并联布置。 第一和第三二极管中的每一个包括在第二导电类型的轻掺杂阱中形成的不同类型导电体的相邻区域,这些阱被分离; 第二和第四二极管中的每一个包括不同类型导电性的分离区域; 并且金属化连接二极管的电极以形成所需的串联到并联组件。