公开(公告)号：US20050224984A1

公开(公告)日：2005-10-13

申请号：US10811124

申请日：2004-03-25

申请人： Edgardo Hortaleza ,  Lei Li

发明人： Edgardo Hortaleza ,  Lei Li

IPC分类号： H01L23/48 ,  H01L23/485

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05147 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/85201 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2924/00

摘要： An integrated circuit having copper interconnecting metallization (311, 312) protected by a first, inorganic overcoat layer (320), portions of the metallization exposed in windows (301, 302) opened through the thickness of the first overcoat layer. A patterned conductive barrier layer (330) is positioned on the exposed portion of the copper metallization and on portions of the first overcoat layer surrounding the window. A bondable metal layer (350, 351) is positioned on the barrier layer; the thickness of this bondable layer is suitable for wire bonding. A second, organic overcoat layer (360) is surrounding the window so that the surface (360a) of this second overcoat layer at the edge of the window is at or above the surface (350a) of the bondable layer. The second overcoat layer may be spaced (370) from the edge of the bondable metal layer.

摘要翻译： 具有由第一无机外涂层（320）保护的铜互连金属化（311,312）的集成电路，暴露在窗口（301,302）中的金属化部分暴露在第一外涂层的厚度上。 图案化的导电阻挡层（330）被定位在铜金属化的暴露部分上以及围绕窗口的第一覆盖层的部分上。 可粘合金属层（350,351）位于阻挡层上; 该可结合层的厚度适合于引线接合。 第二有机覆盖层（360）围绕窗户，使得窗口边缘处的该第二覆盖层的表面（360a）处于或接合在可结合层的表面（350a）上方。 第二外涂层可以与可粘合金属层的边缘间隔开（370）。

公开(公告)号：US20050206007A1

公开(公告)日：2005-09-22

申请号：US10804363

申请日：2004-03-18

申请人： Lei Li ,  Edgardo Hortaleza

发明人： Lei Li ,  Edgardo Hortaleza

IPC分类号： H01L21/44 ,  H01L21/60 ,  H01L21/768 ,  H01L23/485 ,  H01L23/52

CPC分类号： H01L24/05 ,  H01L21/7684 ,  H01L24/03 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/85201 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2924/00

摘要： A metal structure for an integrated circuit, which has copper interconnecting metallization (311) protected by an overcoat layer (320). A portion of the metallization is exposed in a window (301) opened through the thickness of the overcoat layer. The metal structure comprises a patterned conductive barrier layer (330) positioned on the copper metallization, wherein this barrier layer forms a trough with walls (331) conformal with the overcoat window. The height (331a) of the wall is less (between 3 and 20%) than the overcoat thickness (320a), forming a step (340). A plug (350) of bondable metal, preferably aluminum, is positioned in the trough and has a thickness equal to the trough wall height (331a).

摘要翻译： 一种用于集成电路的金属结构，其具有由外涂层（320）保护的铜互连金属化（311）。 金属化的一部分在通过外涂层的厚度打开的窗口（301）中暴露。 金属结构包括定位在铜金属化层上的图案化导电阻挡层（330），其中该阻挡层形成具有与外涂层窗保形的壁（331）的槽。 壁的高度（331a）比外涂层厚度（320a）小（在3和20％之间），形成步骤（340）。 可接合金属（优选铝）的塞子（350）被定位在槽中并且具有等于槽壁高度（331a）的厚度。

公开(公告)号：US20060082000A1

公开(公告)日：2006-04-20

申请号：US11240885

申请日：2005-09-30

申请人： Lei Li ,  Edgardo Hortaleza

发明人： Lei Li ,  Edgardo Hortaleza

IPC分类号： H01L23/52

CPC分类号： H01L24/05 ,  H01L21/7684 ,  H01L24/03 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/85201 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2924/00

摘要： A metal structure for an integrated circuit, which has copper interconnecting metallization (311) protected by an overcoat layer (320). A portion of the metallization is exposed in a window (301) opened through the thickness of the overcoat layer. The metal structure comprises a patterned conductive barrier layer (330) positioned on the copper metallization, wherein this barrier layer forms a trough with walls (331) conformal with the overcoat window. The height (331a) of the wall is less (between 3 and 20 %) than the overcoat thickness (320a), forming a step (340). A plug (350) of bondable metal, preferably aluminum, is positioned in the trough and has a thickness equal to the trough wall height (331a).

摘要翻译： 一种用于集成电路的金属结构，其具有由外涂层（320）保护的铜互连金属化（311）。 金属化的一部分在通过外涂层的厚度打开的窗口（301）中暴露。 金属结构包括定位在铜金属化层上的图案化的导电阻挡层（330），其中该阻挡层形成具有与外涂层窗口共形的壁（331）的槽。 壁的高度（331a）比外涂层厚度（320a）小（在3和20％之间），形成步骤（340）。 可接合金属（优选铝）的塞子（350）被定位在槽中并且具有等于槽壁高度（331a）的厚度。

公开(公告)号：US20050215048A1

公开(公告)日：2005-09-29

申请号：US10806519

申请日：2004-03-23

申请人： Lei Li ,  Edgardo Hortaleza

发明人： Lei Li ,  Edgardo Hortaleza

IPC分类号： H01L21/44 ,  H01L21/4763 ,  H01L21/66 ,  H01L23/485 ,  H01L29/40

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02126 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05147 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/85201 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01061 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2924/00

摘要： A metal structure for a contact pad of an integrated circuit (IC), which has copper interconnecting metallization (311). A portion (301) of this metallization is exposed to provide a contact pad to the IC. A conductive barrier layer (330) is positioned on the exposed portion of the copper metallization. A plug (350) of bondable metal, preferably aluminum between about 0.4 and 1.4 μm thick, is positioned on the barrier layer. A protective overcoat layer (320) surrounds the plug and has a thickness (320b) so that the exposed surface (322) of the plug lies at or below the exposed surface (320a) of the overcoat layer. Optionally, a portion (321) of the overcoat layer between about 0.1 and 0.3 μm wide may overlap the perimeter of the plug.

摘要翻译： 一种用于集成电路（IC）的接触焊盘的金属结构，其具有铜互连金属化（311）。 暴露该金属化部分（301）以向IC提供接触焊盘。 导电阻挡层（330）位于铜金属化的暴露部分上。 可粘合金属的塞子（350）优选地在约0.4至1.4μm厚的铝之间，位于阻挡层上。 保护性外涂层（320）围绕塞子并具有厚度（320b），使得塞子的暴露表面（322）位于外涂层的暴露表面（320a）处或下方。 任选地，外涂层的约0.1至0.3μm宽的部分（321）可以与插塞的周边重叠。

公开(公告)号：US20060094228A1

公开(公告)日：2006-05-04

申请号：US11259547

申请日：2005-10-26

申请人： Lei Li ,  Edgardo Hortaleza

发明人： Lei Li ,  Edgardo Hortaleza

IPC分类号： H01L21/4763

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02126 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05147 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/85201 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01061 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2924/00

摘要： A metal structure for a contact pad of an integrated circuit (IC), which has copper interconnecting metallization (311). A portion (301) of this metallization is exposed to provide a contact pad to the IC. A conductive barrier layer (330) is positioned on the exposed portion o the copper metallization. A plug (350) of bondable metal, preferably aluminum between about 0.4 and 1.4 μm thick, is positioned on the barrier layer. A protective overcoat layer (320) surrounds the plug and has a thickness (320b) so that the exposed surface (322) of the plug lies at or below the exposed surface (320a) of the overcoat layer. Optionally, a portion (321) of the overcoat layer between about 0.1 and 0.3 μm wide may overlap the perimeter of the plug.

摘要翻译： 一种用于集成电路（IC）的接触焊盘的金属结构，其具有铜互连金属化（311）。 暴露该金属化部分（301）以向IC提供接触焊盘。 导电阻挡层（330）位于铜金属化的暴露部分上。 可粘合金属的塞子（350）优选地在约0.4至1.4μm厚的铝之间，位于阻挡层上。 保护性外涂层（320）围绕塞子并具有厚度（320b），使得塞子的暴露表面（322）位于外涂层的暴露表面（320a）处或下方。 任选地，外涂层的约0.1至0.3μm宽的部分（321）可以与插塞的周边重叠。

公开(公告)号：US20050224987A1

公开(公告)日：2005-10-13

申请号：US10820620

申请日：2004-04-07

申请人： Edgardo Hortaleza ,  Lei Li

发明人： Edgardo Hortaleza ,  Lei Li

IPC分类号： H01L23/485 ,  H01L29/40

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02126 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05147 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/85201 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01327 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2924/00

摘要： An integrated circuit having copper interconnecting metallization (311, 312) protected by a first overcoat layer (320), portions of the metallization exposed in windows (301, 302) opened through the thickness of the first overcoat layer. A patterned conductive barrier layer (330) is positioned on the exposed portion of the copper metallization and on portions of the first overcoat layer surrounding the window. A bondable metal layer (350, 351) is positioned on the barrier layer; the thickness of this bondable layer is suitable for wire bonding. A second overcoat layer (360) including insulating silicon compounds is positioned on the first overcoat layer so that the edge (362) of the second overcoat layer overlays the edge of the bondable layer positioned on the portions (321) of the first overcoat layer surrounding the window.

摘要翻译： 具有由第一覆盖层（320）保护的铜互连金属化（311,312）的集成电路，暴露在窗口（301,302）中的金属化部分暴露在第一外涂层的厚度上。 图案化的导电阻挡层（330）被定位在铜金属化的暴露部分上以及围绕窗口的第一覆盖层的部分上。 可粘合金属层（350,351）位于阻挡层上; 该可结合层的厚度适合于引线接合。 包括绝缘硅化合物的第二覆盖层（360）位于第一外涂层上，使得第二覆盖层的边缘（362）覆盖位于第一外涂层周围部分（321）上的可结合层的边缘 窗户。

公开(公告)号：USD1029719S1

公开(公告)日：2024-06-04

申请号：US29849514

申请日：2022-08-11

申请人： Lei Li

设计人： Lei Li

摘要： FIG. 1 is a front and top perspective view of an exhaust pipe, showing my new design;
FIG. 2 is a rear and bottom perspective view thereof;
FIG. 3 is another front and top perspective view thereof;
FIG. 4 is another rear and bottom perspective view thereof;
FIG. 5 is a front elevation view thereof;
FIG. 6 is a rear elevation view thereof;
FIG. 7 is a left side elevation view thereof;
FIG. 8 is a right side elevation view thereof;
FIG. 9 is a top plan view thereof; and,
FIG. 10 is a bottom plan view thereof.
The broken lines in the figures illustrate portions of the exhaust pipe that form no part of the claimed design.

公开(公告)号：US20190095286A1

公开(公告)日：2019-03-28

申请号：US15714366

申请日：2017-09-25

申请人： Zhenqiu Fang ,  Lei Li ,  Zhonghua Dang ,  Guangju Li

发明人： Zhenqiu Fang ,  Lei Li ,  Zhonghua Dang ,  Guangju Li

IPC分类号： G06F11/14

摘要： A system and method are presented that identify new, modified, unchanged, and deleted files in an incremental backup through a file list maintained on the backup destination. The FileList is a flat file in which file information about each file on a source node is stored sequentially into the file. During a subsequent incremental backup, the FileList is read sequentially from the backup destination and is used to generate a search tree. A hash value based on the file path is the key to the search tree, with the file's modified time and size being hashed together to form the value of the tree's key-value pair. Files are examined on the source and compared to the key-value pairs in the search tree. Status information in the search tree is modified to indicate discovered files. Unmodified status information identifies files that have been deleted since the previous backup.

公开(公告)号：US10123327B2

公开(公告)日：2018-11-06

申请号：US14344926

申请日：2011-09-19

申请人： Yang Hu ,  Zhiping Lei ,  Lei Li ,  Jie Mao

发明人： Yang Hu ,  Zhiping Lei ,  Lei Li ,  Jie Mao

IPC分类号： H04W72/04 ,  H04L5/00 ,  H04L27/26 ,  H04W88/08

摘要： Embodiments of the disclosure provide a method in a source node for transmitting data in an OFDM system in which data are transmitted on frequency bands from the source node to a destination node, the method comprising: selecting a set of frequency bands from available frequency bands in the OFDM system; and transmitting data in frequency domain on the selected set of frequency bands to the destination node. Embodiments of the disclosure further provide a method at a destination node for receiving data in an OFDM system in which data are received on frequency bands from a source node, the method comprising: determining a set of frequency bands of available frequency bands on which data are to be received in frequency domain; and receiving the data on the determined set of frequency bands from the source node. Corresponding apparatuses are also provided.

公开(公告)号：US20180010260A1

公开(公告)日：2018-01-11

申请号：US15646761

申请日：2017-07-11

申请人： Mark C. Hersam ,  Ethan B. Secor ,  Lei Li

发明人： Mark C. Hersam ,  Ethan B. Secor ,  Lei Li

IPC分类号： C25D13/02 ,  H01G11/86 ,  H01G11/32

CPC分类号： C25D13/02 ,  C09D5/24 ,  C09D11/00 ,  C09D11/324 ,  C09D11/52 ,  H01G11/10 ,  H01G11/32 ,  H01G11/84 ,  H01G11/86 ,  Y02E60/13

摘要： Solid-state supercapacitors and microsupercapacitors comprising printed graphene electrodes and related methods of preparation.