摘要:
An optical triplexer transceiver that utilizes parallel signal detection for use in broadband passive optical networks (B-PONs). The triplexer transceiver includes an optical filter comprising a first port coupled to a laser for receiving upstream optical data signals, a second port for passing the upstream optical data signals to a network, and for receiving combined downstream optical data and video signals from the network, the video signals modulated by subcarrier modulation (SCM), and a third port for communicating the combined downstream optical data and video signals to a photodetector constructed and arranged for simultaneously receiving the combined downstream optical data and video signals and converting the optical data and video signals to electrical signals. A plurality of filters are coupled to the photodetector for separating the combined downstream data and video signals, including a low-pass filter for passing the downstream data signals, and a band-pass filter for passing the video signals. The video signals are coherently detected in a number of stages corresponding to stages of SCM applied to the video signals. The triplexer transceiver is adapted to receive optical video signals that have been subjected first and second stages of SCM to move the spectra of the SCM video signals to a higher frequency range that does not overlap with a frequency range of the baseband data signals.
摘要:
An optical triplexer transceiver that utilizes parallel signal detection for use in broadband passive optical networks (B-PONs). The triplexer transceiver includes an optical filter comprising a first port coupled to a laser for receiving upstream optical data signals, a second port for passing the upstream optical data signals to a network, and for receiving combined downstream optical data and video signals from the network, the video signals modulated by subcarrier modulation (SCM), and a third port for communicating the combined downstream optical data and video signals to a photodetector constructed and arranged for simultaneously receiving the combined downstream optical data and video signals and converting the optical data and video signals to electrical signals. A plurality of filters are coupled to the photodetector for separating the combined downstream data and video signals, including a low-pass filter for passing the downstream data signals, and a band-pass filter for passing the video signals. The video signals are coherently detected in a number of stages corresponding to stages of SCM applied to the video signals. The triplexer transceiver is adapted to receive optical video signals that have been subjected first and second stages of SCM to move the spectra of the SCM video signals to a higher frequency range that does not overlap with a frequency range of the baseband data signals.
摘要:
A tunable asymmetric interleaver constructed from two symmetric interleavers in series, wherein either or both of the individual symmetric interleavers exhibit a wavelength shifting ability. Advantageously, tunable asymmetric interleavers so constructed provide continuous tunable interleaving ratios from 0:100 to 50:50 to 100:0 and provide attractive upgrade paths for existing and future DWDM networks and applications.
摘要:
A method is provided in order to manufacture a silicon carbide epitaxial wafer whose surface flatness is very good and has a very low density of carrot defects and triangular defects arising after epitaxial growth. The silicon carbide epitaxial wafer is manufactured by a first step of annealing a silicon carbide bulk substrate that is tilted less than 5 degrees from face, in a reducing gas atmosphere at a first temperature T1 for a treatment time t, a second step of reducing the temperature of the substrate in the reducing gas atmosphere, and a third step of performing epitaxial growth at a second temperature T2 below the annealing temperature T1 in the first step, while supplying at least a gas including silicon atoms and a gas including carbon atoms.
摘要:
Simple and small-sized equipment which continuously afford alternate twists to an optical fiber and a method using the apparatus are provided. The equipment includes: a guide roller for causing the fiber to roll; a roller supporting member for holding the roller in a manner allowing the roller to freely turn about an axial center X; and a driving unit to cause the roller to oscillate by making the supporting member to turn about an axial center Y that is inclined relative to the axial center X. The method includes: arranging a guide roller to intersect the fiber, the roller being held by a roller supporting member to freely turn about an axial center X; oscillating the roller by driving the supporting member to revolve about the axial center Y which is inclined relative to the axis center X; and causing the fiber to roll to afford alternate twists to the fiber.
摘要:
A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type Ga—N substrate (1) over which a semiconductor element is formed, and an n-electrode (10) as a metal electrode formed over the back surface of the GaN substrate (1). A connection layer (20) is formed between the GaN substrate (1) and the n-electrode (10), and the connection layer (2) is composed of a material that is other than nitride semiconductors and that contains silicon.
摘要:
The objective of the present invention is to provide a semiconductor device of a hetero-junction field effect transistor that is capable of obtaining a high output and a high breakdown voltage and a manufacturing method of the same. The present invention is a semiconductor device of a hetero junction field effect transistor provided with an AlxGa1-xN channel layer with a composition ratio of Al being x (0
摘要翻译:本发明的目的是提供能够获得高输出和高击穿电压的异质结场效应晶体管的半导体器件及其制造方法。 本发明是一种异质结场效应晶体管的半导体器件,其具有Al x Ga 1-x N沟道层,Al x Ga 1-x N沟道层的组成比为Al(x(0
摘要:
The objective of the present invention is to provide a semiconductor device of a hetero-junction field effect transistor that is capable of obtaining a high output and a high breakdown voltage and a manufacturing method of the same. The present invention is a semiconductor device of a hetero-junction field effect transistor provided with an AlxGa1-xN channel layer with a composition ratio of Al being x (0
摘要翻译:本发明的目的是提供能够获得高输出和高击穿电压的异质结场效应晶体管的半导体器件及其制造方法。 本发明是一种异质结场效应晶体管的半导体器件,其具有Al x Ga 1-x N沟道层,Al x Ga 1-x N沟道层的组成比为Al(x(0
摘要:
Simple and small-sized equipment which continuously afford alternate twists to an optical fiber and a method using the apparatus are provided. The equipment includes: a guide roller for causing the fiber to roll; a roller supporting member for holding the roller in a manner allowing the roller to freely turn about an axial center X; and a driving unit to cause the roller to oscillate by making the supporting member to turn about an axial center Y that is inclined relative to the axial center X. The method includes: arranging a guide roller to intersect the fiber, the roller being held by a roller supporting member to freely turn about an axial center X; oscillating the roller by driving the supporting member to revolve about the axial center Y which is inclined relative to the axis center X; and causing the fiber to roll to afford alternate twists to the fiber.
摘要:
A nitride semiconductor device is manufactured by the step of forming a nitride semiconductor layer form on a GaN substrate main surface, the step of polishing a back surface of the GaN substrate formed with the above-mentioned nitride semiconductor layer, the step of dry etching the back surface of the GaN substrate subjected to the above-mentioned polishing by using a gas mixture of chlorine and oxygen, and the step of forming an n-type electrode on the back surface of the GaN substrate subjected to the above-mentioned dry etching.