公开(公告)号：US09897930B2

公开(公告)日：2018-02-20

申请号：US13057583

申请日：2009-07-22

申请人： Leonid Aizikovitch Sjmaenok ,  Vadim Yevgenyevich Banine ,  Johannes Hubertus Josephina Moors ,  Denis Alexandrovich Glushkov ,  Andrei Mikhailovich Yakunin

发明人： Leonid Aizikovitch Sjmaenok ,  Vadim Yevgenyevich Banine ,  Johannes Hubertus Josephina Moors ,  Denis Alexandrovich Glushkov ,  Andrei Mikhailovich Yakunin

IPC分类号： G03F7/20

CPC分类号： G03F7/70958 ,  G03F7/70191 ,  G03F7/702 ,  G03F7/70308 ,  G03F7/70575 ,  G03F7/70916

摘要： A lithographic apparatus includes an optical element that includes an oriented carbon nanotube sheet. The optical element has an element thickness in the range of about 20-500 nm and has a transmission for EUV radiation having a wavelength in the range of about 1-20 nm of at least about 20% under perpendicular irradiation with the EUV radiation.

公开(公告)号：US20110080573A1

公开(公告)日：2011-04-07

申请号：US12996036

申请日：2009-05-20

申请人： Denis Alexandrovich Glushkov ,  Vadim Yevgenyevich Banine ,  Johannes Hubertus Josephina Moors ,  Leonid Aizikovitch Sjmaenok ,  Nikolai Nikolaevich Salaschenko

发明人： Denis Alexandrovich Glushkov ,  Vadim Yevgenyevich Banine ,  Johannes Hubertus Josephina Moors ,  Leonid Aizikovitch Sjmaenok ,  Nikolai Nikolaevich Salaschenko

IPC分类号： G03B27/72 ,  G02B5/28

CPC分类号： G03F7/70958 ,  B82Y10/00 ,  G03F1/24 ,  G21K1/062 ,  G21K2201/067

摘要： A multilayer mirror is constructed and arranged to reflect radiation haying a wavelength in the range of 2-8 nm. The multilayer mirror has alternating layers selected from the group consisting of: Cr and Sc layers, Cr and C layers, C and B4C layers, U and B4C layers, Th and B4C layers, C and B9C layers, La and B9C layers, U and B9C layers, Th and B9C layers, La and B layers, C and B layers. U and B layers, and Th and B layers.

摘要翻译： 构造和布置多层反射镜以反射辐射范围为2-8nm的辐射。 多层反射镜具有选自Cr和Sc层，Cr和C层，C和B4C层，U和B4C层，Th和B4C层，C和B9C层，La和B9C层，U和 B9C层，Th和B9C层，La和B层，C和B层。 U和B层，以及Th和B层。

公开(公告)号：US09448492B2

公开(公告)日：2016-09-20

申请号：US14126326

申请日：2012-03-26

申请人： Andrei Mikhailovich Yakunin ,  Denis Alexandrovich Glushkov ,  Vladimir Nikolaevich Polkovnikov ,  Nikolay Nikolaevitch Salashchenko ,  Leonid Aizikovitch Sjmaenok

发明人： Andrei Mikhailovich Yakunin ,  Denis Alexandrovich Glushkov ,  Vladimir Nikolaevich Polkovnikov ,  Nikolay Nikolaevitch Salashchenko ,  Leonid Aizikovitch Sjmaenok

IPC分类号： G03B27/54 ,  G03F7/20 ,  G02B5/08 ,  G21K1/06 ,  B82Y10/00

CPC分类号： G03F7/702 ,  B82Y10/00 ,  G02B5/0816 ,  G02B5/0875 ,  G02B5/0891 ,  G03F7/70866 ,  G03F7/70883 ,  G21K1/062 ,  G21K2201/061

摘要： A multilayer mirror for use in device lithography is configured to reflect and/or pattern radiation having a wavelength in the range of about 6.4 nm to about 7.2 nm. The multilayer mirror has a plurality of alternating layers of materials. The plurality of alternating layers of materials include first layers of materials and second layers of materials. The second layers have a higher refractive index for the radiation than the first layers. The materials of the first layers and the materials of the second layers are mutually chemically unreactive at an interface therebetween at temperatures less than 300° C. This may allow the mirrors to have a narrow boundary region of intermingled materials from alternating layers between the layers, for example of 0.5 nm or less in width, which may improve sharpness of the boundary region and improve reflectivity.

摘要翻译： 用于器件光刻的多层反射镜被配置为反射和/或形成具有在约6.4nm至约7.2nm范围内的波长的辐射。 多层反射镜具有多个交替的材料层。 多个交替的材料层包括第一层材料和第二层材料。 第二层对于辐射具有比第一层更高的折射率。 第一层的材料和第二层的材料在低于300℃的温度下在其界面处相互化学反应。这可以允许反射镜具有与层之间的交替层的混合材料的窄边界区域， 例如0.5nm以下的宽度，这可以提高边界区域的清晰度并提高反射率。

公开(公告)号：US20110292366A1

公开(公告)日：2011-12-01

申请号：US13201242

申请日：2010-01-11

申请人： Denis Alexandrovich Glushkov ,  Vadim Yevgenyevich Banine ,  Leonid Aizikovitch Sjmaenok ,  Nikolay Nikolaevitch Salashchenko ,  Nikolay Ivanovich Chkhalo

发明人： Denis Alexandrovich Glushkov ,  Vadim Yevgenyevich Banine ,  Leonid Aizikovitch Sjmaenok ,  Nikolay Nikolaevitch Salashchenko ,  Nikolay Ivanovich Chkhalo

IPC分类号： G03B27/54 ,  G02B5/08

CPC分类号： G21K1/062 ,  B82Y10/00 ,  B82Y40/00 ,  G02B5/0816 ,  G02B5/085 ,  G02B5/0891 ,  G03F1/24 ,  G03F7/70316 ,  G03F7/70941 ,  G03F7/70958

摘要： A multilayer mirror to reflect radiation having a wavelength in the range of 2-8 nm has alternating layers. The alternating layers include a first layer and a second layer. The first and second layers are selected from the group consisting of: U and B4C layers, Th and B4C layers, La and B9C layers, La and B4C layers, U and B9C layers, Th and B9C layers, La and B layers, U and B layers, C and B layers, Th and B layers, U compound and B4C layers, Th compound and B4C layers, La compound and B9C layers, La compound and B4C layers, U compound and a B9C layers, Th compound and a B9C layers, La compound and a B layers, U compound and B layers, and Th compound and a B layers. An interlayer is disposed between at least one of the first layers and the second layer.

摘要翻译： 用于反射波长在2-8nm范围内的辐射的多层反射镜具有交替层。 交替层包括第一层和第二层。 第一层和第二层选自：U和B4C层，Th和B4C层，La和B9C层，La和B4C层，U和B9C层，Th和B9C层，La和B层，U和 B层，C层和B层，Th和B层，U化合物和B4C层，Th化合物和B4C层，La化合物和B9C层，La化合物和B4C层，U化合物和B9C层，Th化合物和B9C层 ，La化合物和B层，U化合物和B层，以及Th化合物和B层。 中间层设置在第一层和第二层中的至少一个之间。

公开(公告)号：US09082521B2

公开(公告)日：2015-07-14

申请号：US13201242

申请日：2010-01-11

申请人： Denis Alexandrovich Glushkov ,  Vadim Yevgenyevich Banine ,  Leonid Aizikovitch Sjmaenok ,  Nikolay Nikolaevitch Salashchenko ,  Nikolay Ivanovich Chkhalo

发明人： Denis Alexandrovich Glushkov ,  Vadim Yevgenyevich Banine ,  Leonid Aizikovitch Sjmaenok ,  Nikolay Nikolaevitch Salashchenko ,  Nikolay Ivanovich Chkhalo

IPC分类号： G02B5/08 ,  G21K1/06 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F7/20

CPC分类号： G21K1/062 ,  B82Y10/00 ,  B82Y40/00 ,  G02B5/0816 ,  G02B5/085 ,  G02B5/0891 ,  G03F1/24 ,  G03F7/70316 ,  G03F7/70941 ,  G03F7/70958

摘要： A multilayer mirror to reflect radiation having a wavelength in the range of 2-8 nm has alternating layers. The alternating layers include a first layer and a second layer. The first and second layers are selected from the group consisting of: U and B4C layers, Th and B4C layers, La and B9C layers, La and B4C layers, U and B9C layers, Th and B9C layers, La and B layers, U and B layers, C and B layers, Th and B layers, U compound and B4C layers, Th compound and B4C layers, La compound and B9C layers, La compound and B4C layers, U compound and a B9C layers, Th compound and a B9C layers, La compound and a B layers, U compound and B layers, and Th compound and a B layers. An interlayer is disposed between at least one of the first layers and the second layer.

摘要翻译： 用于反射波长在2-8nm范围内的辐射的多层反射镜具有交替层。 交替层包括第一层和第二层。 第一层和第二层选自：U和B4C层，Th和B4C层，La和B9C层，La和B4C层，U和B9C层，Th和B9C层，La和B层，U和 B层，C层和B层，Th和B层，U化合物和B4C层，Th化合物和B4C层，La化合物和B9C层，La化合物和B4C层，U化合物和B9C层，Th化合物和B9C层 ，La化合物和B层，U化合物和B层，以及Th化合物和B层。 中间层设置在第一层和第二层中的至少一个之间。

公开(公告)号：US20140198306A1

公开(公告)日：2014-07-17

申请号：US14126326

申请日：2012-03-26

申请人： Andrei Mikhailovich Yakunin ,  Denis Alexandrovich Glushkov ,  Vladimir Nikolaevich Polkovnikov ,  Nikolay Nikolaevitch Salashchenko ,  Leonid Aizikovitch Sjmaenok

发明人： Andrei Mikhailovich Yakunin ,  Denis Alexandrovich Glushkov ,  Vladimir Nikolaevich Polkovnikov ,  Nikolay Nikolaevitch Salashchenko ,  Leonid Aizikovitch Sjmaenok

IPC分类号： G03F7/20 ,  G21K1/06

CPC分类号： G03F7/702 ,  B82Y10/00 ,  G02B5/0816 ,  G02B5/0875 ,  G02B5/0891 ,  G03F7/70866 ,  G03F7/70883 ,  G21K1/062 ,  G21K2201/061

摘要： A multilayer mirror for use in device lithography is configured to reflect and/or pattern radiation having a wavelength in the range of about 6.4 nm to about 7.2 nm. The multilayer mirror has a plurality of alternating layers of materials. The plurality of alternating layers of materials include first layers of materials and second layers of materials. The second layers have a higher refractive index for the radiation than the first layers. The materials of the first layers and the materials of the second layers are mutually chemically unreactive at an interface therebetween at temperatures less than 300° C. This may allow the mirrors to have a narrow boundary region of intermingled materials from alternating layers between the layers, for example of 0.5 nm or less in width, which may improve sharpness of the boundary region and improve reflectivity.

摘要翻译： 用于器件光刻的多层反射镜被配置为反射和/或形成具有在约6.4nm至约7.2nm范围内的波长的辐射。 多层反射镜具有多个交替的材料层。 多个交替的材料层包括第一层材料和第二层材料。 第二层对于辐射具有比第一层更高的折射率。 第一层的材料和第二层的材料在低于300℃的温度下在其界面处相互化学反应。这可以允许反射镜具有与层之间的交替层的混合材料的窄边界区域， 例如0.5nm以下的宽度，这可以提高边界区域的清晰度并提高反射率。

公开(公告)号：US20100328639A1

公开(公告)日：2010-12-30

申请号：US12826459

申请日：2010-06-29

申请人： Martin Jacobus Johan Jak ,  Vadim Yevgenyevich Banine ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Wouter Anthon Soer ,  Denis Alexandrovich Glushkov ,  Andrei Mikhailovich Yakunin

发明人： Martin Jacobus Johan Jak ,  Vadim Yevgenyevich Banine ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Wouter Anthon Soer ,  Denis Alexandrovich Glushkov ,  Andrei Mikhailovich Yakunin

IPC分类号： G03B27/72 ,  G02B5/20 ,  B29D11/00

CPC分类号： G03B27/72 ,  G02B5/204 ,  G02B5/208 ,  G03F7/70191 ,  G03F7/70575

摘要： A transmissive spectral purity filter is configured to transmit extreme ultraviolet radiation. The spectral purity filter includes a filter part having a plurality of apertures to transmit extreme ultraviolet radiation and to suppress transmission of a second type of radiation. The apertures may be manufactured in carrier material such as silicon by an anisotropic etching process and topped with a reflective layer such as Mo metal, Ru metal, TiN or RuO. A diffusion barrier layer such as silicon nitride Si3N4, or silicon dioxide SiO2 is provided between the metal and the semiconductor to prevent diffusion and silicidation of the metal at elevated temperatures. The diffusion barrier layer may also serve as a hydrogen-resistant layer on parts of the semiconductor which are not beneath the reflective layer, and/or enhance emissivity for removal of heat from the structure.

摘要翻译： 透射光谱纯度滤光器被配置为透射极紫外辐射。 光谱纯度滤光器包括具有多个孔以便透射极紫外辐射并抑制第二类辐射的透射的滤光器部分。 孔可以通过各向异性蚀刻工艺在诸如硅的载体材料中制成，并且覆盖有诸如Mo金属，Ru金属，TiN或RuO的反射层。 在金属和半导体之间设置有诸如氮化硅Si 3 N 4或二氧化硅SiO 2的扩散阻挡层，以防止金属在升高的温度下扩散和硅化。 扩散阻挡层还可以在半导体的不在反射层下面的部分上用作耐氢层，和/或增加用于从结构去除热量的发射率。

公开(公告)号：US20110226735A1

公开(公告)日：2011-09-22

申请号：US13051441

申请日：2011-03-18

申请人： Sander Frederik Wuister ,  Vadim Yevgenyevich Banine ,  Arie Jeffrey Den Boef ,  Yvonne Wendela Kruijt-Stegeman ,  Tatyana Viktorovna Rakhimova ,  Dmitriy Viktorovich Lopaev ,  Denis Alexandrovich Glushkov ,  Andrei Mikhailovich Yakunin ,  Roelof Koole

发明人： Sander Frederik Wuister ,  Vadim Yevgenyevich Banine ,  Arie Jeffrey Den Boef ,  Yvonne Wendela Kruijt-Stegeman ,  Tatyana Viktorovna Rakhimova ,  Dmitriy Viktorovich Lopaev ,  Denis Alexandrovich Glushkov ,  Andrei Mikhailovich Yakunin ,  Roelof Koole

IPC分类号： B29C59/14 ,  B29C59/00

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

摘要： An imprint lithography method is disclosed that includes, after imprinting an imprint lithography template into a layer of imprintable medium to form a pattern in that imprintable medium and fixing that pattern to form a patterned layer of imprintable medium, adding etch resistant material (i.e. a hard mask) to a part of the patterned layer of imprintable medium to reduce a difference between an intended topography and an actual topography of that part of the patterned layer of imprintable medium.

摘要翻译： 公开了一种压印光刻方法，其包括在将压印光刻模板压印到可压印介质层中以在该可压印介质中形成图案并固定该图案以形成可压印介质的图案化层之后，添加耐蚀刻材料（即，硬 掩模）到可压印介质的图案化层的一部分，以减少所期望的形貌与可压印介质的图案化层的该部分的实际形貌之间的差异。

公开(公告)号：US08454849B2

公开(公告)日：2013-06-04

申请号：US13051441

申请日：2011-03-18

申请人： Sander Frederik Wuister ,  Vadim Yevgenyevich Banine ,  Arie Jeffrey Den Boef ,  Yvonne Wendela Kruijt-Stegeman ,  Tatyana Viktorovna Rakhimova ,  Dmitriy Viktorovich Lopaev ,  Denis Alexandrovich Glushkov ,  Andrei Mikhailovich Yakunin ,  Roelof Koole

发明人： Sander Frederik Wuister ,  Vadim Yevgenyevich Banine ,  Arie Jeffrey Den Boef ,  Yvonne Wendela Kruijt-Stegeman ,  Tatyana Viktorovna Rakhimova ,  Dmitriy Viktorovich Lopaev ,  Denis Alexandrovich Glushkov ,  Andrei Mikhailovich Yakunin ,  Roelof Koole

IPC分类号： B44C1/22 ,  C23F1/00

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

摘要： An imprint lithography method is disclosed that includes, after imprinting an imprint lithography template into a layer of imprintable medium to form a pattern in that imprintable medium and fixing that pattern to form a patterned layer of imprintable medium, adding etch resistant material (i.e. a hard mask) to a part of the patterned layer of imprintable medium to reduce a difference between an intended topography and an actual topography of that part of the patterned layer of imprintable medium.

摘要翻译： 公开了一种压印光刻方法，其包括在将压印光刻模板压印到可压印介质层中以在该可压印介质中形成图案并固定该图案以形成可压印介质的图案化层之后，添加耐蚀刻材料（即，硬 掩模）到可压印介质的图案化层的一部分，以减少所期望的形貌与可压印介质的图案化层的该部分的实际形貌之间的差异。

公开(公告)号：US20130015373A1

公开(公告)日：2013-01-17

申请号：US13583986

申请日：2011-03-08

申请人： Andrei Mikhailovich Yakunin ,  Vadim Yevgenyevich Banine ,  Vladimir Vitalevich Ivanov ,  Konstantin Nikolaevich Koshelev ,  Vladimir Mihailovitch Krivtsun ,  Denis Alexandrovich Glushkov

发明人： Andrei Mikhailovich Yakunin ,  Vadim Yevgenyevich Banine ,  Vladimir Vitalevich Ivanov ,  Konstantin Nikolaevich Koshelev ,  Vladimir Mihailovitch Krivtsun ,  Denis Alexandrovich Glushkov

IPC分类号： G21K5/00

CPC分类号： H05G2/008 ,  G03F7/70033 ,  G03F7/70916 ,  H05G2/003

摘要： An EUV radiation source comprising a fuel supply (200) configured to deliver a droplet of fuel to a plasma generation location (201), a first laser beam source configured to provide a first beam of laser radiation (205) incident upon the fuel droplet at the plasma generation location and thereby vaporizes the fuel droplet, and a second laser beam source configured to subsequently provide a second beam of laser radiation (205) at the plasma generation location, the second beam of laser radiation being configured to vaporize debris particles (252) arising from incomplete vaporization of the fuel droplet.

摘要翻译： EUV辐射源包括被配置为将等离子体产生位置（201）的燃料液滴输送的燃料供应（200），第一激光束源被配置为提供入射在燃料液滴上的第一激光辐射束（205） 等离子体产生位置，从而蒸发燃料液滴，以及第二激光束源，其被配置为随后在等离子体产生位置处提供第二激光辐射束（205），第二激光辐射束被配置为使碎片颗粒（252 ）由燃料液滴的不完全蒸发引起。