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公开(公告)号:US20240188827A1
公开(公告)日:2024-06-13
申请号:US18535408
申请日:2023-12-11
Applicant: Lextar Electronics Corporation
Inventor: Pei-Fang TSOU , Yu-Jing FANG , Cheng-Ping CHANG , Yen-Chih CHOU , Chun-Heng LEE , Hsiao Heng HO
IPC: A61B5/00 , H01L31/0216 , H01L31/0224 , H01L31/16
CPC classification number: A61B5/0075 , H01L31/02162 , H01L31/022408 , H01L31/165
Abstract: A photosensitive device is provided. The photosensitive device includes a sensing stack, an anti-reflective layer, an optical filter, a first electrode, and a second electrode. The sensing stack includes a first semiconductor layer, an intrinsic semiconductor layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the intrinsic semiconductor layer. The anti-reflective layer is disposed on a side of the sensing stack. The optical filter is disposed on the anti-reflective layer and blocks input light with an incident angle greater than 50 degrees. The first electrode and the second electrode are disposed on the sensing stack.
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公开(公告)号:US20240339572A1
公开(公告)日:2024-10-10
申请号:US18743135
申请日:2024-06-14
Applicant: Lextar Electronics Corporation
Inventor: Yu-Jing FANG , Hsiang-Chun HSU , Cheng-Ping CHANG
IPC: H01L33/58 , H01L21/56 , H01L23/31 , H01L31/0203 , H01L31/0232 , H01L31/18 , H01L33/00 , H01L33/54
CPC classification number: H01L33/58 , H01L21/565 , H01L23/3135 , H01L31/0203 , H01L31/02327 , H01L31/18 , H01L33/005 , H01L33/54 , H01L2933/005 , H01L2933/0058
Abstract: A diode package structure includes a substrate, at least one diode chip and an opaque encapsulating layer. The substrate has an electrically conductive layer. At least one diode chip is mounted on the substrate and electrically connected to the electrically conductive layer. The opaque encapsulating layer has a cap portion and a sidewall portion, wherein the sidewall portion is connected to and surrounds the substrate to jointly form a concave structure, the cap portion is connected between a sidewall of the diode chip and the sidewall portion, wherein a first contact vertex of the cap portion and the sidewall of the diode chip is higher than a second contact vertex of the cap portion and the sidewall portion.
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公开(公告)号:US20220190216A1
公开(公告)日:2022-06-16
申请号:US17447574
申请日:2021-09-13
Applicant: Lextar Electronics Corporation
Inventor: Yu-Jing FANG , Hsiang-Chun HSU , Cheng-Ping CHANG
IPC: H01L33/58 , H01L23/31 , H01L31/0203 , H01L31/0232 , H01L33/54 , H01L21/56 , H01L31/18 , H01L33/00
Abstract: A diode package structure includes a substrate, at least one diode chip and an opaque encapsulating layer. The substrate has an electrically conductive layer. At least one diode chip is mounted on the substrate and electrically connected to the electrically conductive layer. The opaque encapsulating layer has a cap portion and a sidewall portion, wherein the sidewall portion is connected to and surrounds the substrate to jointly form a concave structure, the cap portion is connected between a sidewall of the diode chip and the sidewall portion, wherein a first contact vertex of the cap portion and the sidewall of the diode chip is higher than a second contact vertex of the cap portion and the sidewall portion.
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