公开(公告)号：US20180108817A1

公开(公告)日：2018-04-19

申请号：US15696198

申请日：2017-09-06

Applicant: Lextar Electronics Corporation

Inventor： Cheng-Ping CHANG ,  Zong-Han YU

IPC: H01L33/50 ,  H01L25/13 ,  H01L33/48

CPC classification number: H01L33/507 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L25/13 ,  H01L33/486 ,  H01L33/504 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A white light source device includes a first light-emitting element, and at least one second light-emitting element. The first light-emitting element includes a first light-emitting unit and a first wavelength conversion unit, and emits a first light beam. Each of the second light-emitting elements includes a second light-emitting unit and a second wavelength conversion unit, and emits a second light beam. An emission spectrum of the second light beam is different from an emission spectrum of the first light beam. The first light beam and the second light beam are mixed into a white light beam, and a color fidelity index of the white light beam is greater than 90.

公开(公告)号：US20240188827A1

公开(公告)日：2024-06-13

申请号：US18535408

申请日：2023-12-11

Applicant: Lextar Electronics Corporation

Inventor： Pei-Fang TSOU ,  Yu-Jing FANG ,  Cheng-Ping CHANG ,  Yen-Chih CHOU ,  Chun-Heng LEE ,  Hsiao Heng HO

IPC: A61B5/00 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/16

CPC classification number: A61B5/0075 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/165

Abstract: A photosensitive device is provided. The photosensitive device includes a sensing stack, an anti-reflective layer, an optical filter, a first electrode, and a second electrode. The sensing stack includes a first semiconductor layer, an intrinsic semiconductor layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the intrinsic semiconductor layer. The anti-reflective layer is disposed on a side of the sensing stack. The optical filter is disposed on the anti-reflective layer and blocks input light with an incident angle greater than 50 degrees. The first electrode and the second electrode are disposed on the sensing stack.

公开(公告)号：US20150137158A1

公开(公告)日：2015-05-21

申请号：US14281771

申请日：2014-05-19

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Tsung-Han LI ,  Cheng-Ping CHANG

IPC: H01L33/62 ,  H01L33/54 ,  H01L33/50

CPC classification number: H01L33/62

Abstract: A light-emitting diode (LED) package frame is provided, including a leadframe and an insulating member. The leadframe includes a first electrode and a second electrode separated from each other. The insulating member is disposed between the first electrode and the second electrode for insulation between the first and second electrodes, including a first protrusion and a second protrusion. The coefficient of thermal expansion of the insulating member is greater than that of the leadframe. Specifically, the first electrode and the second electrode respectively include a first recess and a second recess which abut the insulating member. The first protrusion and the second protrusion are respectively engaged with the first recess and the second recess.

Abstract translation: 提供了包括引线框架和绝缘构件的发光二极管（LED）封装框架。 引线框架包括彼此分离的第一电极和第二电极。 绝缘构件设置在第一电极和第二电极之间，用于第一和第二电极之间的绝缘，包括第一突起和第二突起。 绝缘构件的热膨胀系数大于引线框架的热膨胀系数。 具体地，第一电极和第二电极分别包括抵接绝缘构件的第一凹部和第二凹部。 第一突起和第二突起分别与第一凹部和第二凹部接合。

公开(公告)号：US20240339572A1

公开(公告)日：2024-10-10

申请号：US18743135

申请日：2024-06-14

Applicant: Lextar Electronics Corporation

Inventor： Yu-Jing FANG ,  Hsiang-Chun HSU ,  Cheng-Ping CHANG

IPC: H01L33/58 ,  H01L21/56 ,  H01L23/31 ,  H01L31/0203 ,  H01L31/0232 ,  H01L31/18 ,  H01L33/00 ,  H01L33/54

CPC classification number: H01L33/58 ,  H01L21/565 ,  H01L23/3135 ,  H01L31/0203 ,  H01L31/02327 ,  H01L31/18 ,  H01L33/005 ,  H01L33/54 ,  H01L2933/005 ,  H01L2933/0058

Abstract: A diode package structure includes a substrate, at least one diode chip and an opaque encapsulating layer. The substrate has an electrically conductive layer. At least one diode chip is mounted on the substrate and electrically connected to the electrically conductive layer. The opaque encapsulating layer has a cap portion and a sidewall portion, wherein the sidewall portion is connected to and surrounds the substrate to jointly form a concave structure, the cap portion is connected between a sidewall of the diode chip and the sidewall portion, wherein a first contact vertex of the cap portion and the sidewall of the diode chip is higher than a second contact vertex of the cap portion and the sidewall portion.

公开(公告)号：US20220190216A1

公开(公告)日：2022-06-16

申请号：US17447574

申请日：2021-09-13

Applicant: Lextar Electronics Corporation

Inventor： Yu-Jing FANG ,  Hsiang-Chun HSU ,  Cheng-Ping CHANG

IPC: H01L33/58 ,  H01L23/31 ,  H01L31/0203 ,  H01L31/0232 ,  H01L33/54 ,  H01L21/56 ,  H01L31/18 ,  H01L33/00

Abstract: A diode package structure includes a substrate, at least one diode chip and an opaque encapsulating layer. The substrate has an electrically conductive layer. At least one diode chip is mounted on the substrate and electrically connected to the electrically conductive layer. The opaque encapsulating layer has a cap portion and a sidewall portion, wherein the sidewall portion is connected to and surrounds the substrate to jointly form a concave structure, the cap portion is connected between a sidewall of the diode chip and the sidewall portion, wherein a first contact vertex of the cap portion and the sidewall of the diode chip is higher than a second contact vertex of the cap portion and the sidewall portion.

公开(公告)号：US20190319175A1

公开(公告)日：2019-10-17

申请号：US15953508

申请日：2018-04-16

Applicant: Lextar Electronics Corporation

Inventor： Cheng-Ping CHANG ,  Zong-Han YU ,  Kuo-Chan HUNG

IPC: H01L33/50

Abstract: A white light emitting device includes a blue LED chip having a dominant emission wavelength of about 440-465 nm, and a phosphor layer configured to be excited by the dominant emission wavelength of the blue LED chip. The phosphor layer includes a first phosphor having a peak emission wavelength of about 480-519 nm, a second phosphor having a peak emission wavelength of about 520-560 nm, and a third phosphor having a peak emission wavelength of about 620-670 nm. The first phosphor and the second phosphor both have a garnet structure as represented by A3B5O12:Ce, A is selected from the group consisting of Y, Lu, and a combination of thereof, and B is selected from the group consisting of Al, Ga, and a combination of thereof.