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14 条记录 (耗时 0.033 秒)

    Capacitive type microelectromechanical RF switch
    1.
    发明授权
    Capacitive type microelectromechanical RF switch 有权
    电容型微机电RF开关

    公开(公告)号：US06777765B2

    公开(公告)日：2004-08-17

    申请号：US10322728

    申请日：2002-12-19

    申请人： Li-Shu Chen ,  Howard N. Fudem ,  Donald E. Crockett ,  Philip C. Smith

    发明人： Li-Shu Chen ,  Howard N. Fudem ,  Donald E. Crockett ,  Philip C. Smith

    IPC分类号： H01L2982

    CPC分类号： H01H59/0009

    摘要： A capacitive type MEMS switch having a conductor arrangement comprised of first and second RF conductors deposited on a substrate. A bridge member having a central enlarged portion is positioned over the conductor arrangement. In one embodiment, the first RF conductor has an end defining an open area in which is positioned a pull down electrode, with the end of the first RF conductor substantially surrounding the pull down electrode. In another embodiment, two opposed RF conductors, each having ends with first and second branches, define an open area in which a pull down electrode is positioned. A dielectric layer is deposited on the conductor arrangement such that when a pull down voltage is applied to the pull down electrode, the switch impedance is significantly reduced so as to allow signal propagation between the RF conductors.

    摘要翻译： 一种电容型MEMS开关，其具有由沉积在基板上的第一和第二RF导体构成的导体装置。 具有中央扩大部分的桥接件位于导体装置的上方。 在一个实施例中，第一RF导体具有限定开放区域的端部，其中定位有下拉电极，第一RF导体的端部基本上围绕下拉电极。 在另一个实施例中，每个具有第一和第二分支的端部的两个相对的RF导体限定其中定位有下拉电极的开放区域。 电介质层沉积在导体布置上，使得当下拉电压施加到下拉电极时，开关阻抗显着减小，以便允许RF导体之间的信号传播。

    Solid state RF switch with high cutoff frequency
    5.
    发明授权
    Solid state RF switch with high cutoff frequency 有权
    具有高截止频率的固态RF开关

    公开(公告)号：US06486511B1

    公开(公告)日：2002-11-26

    申请号：US09942824

    申请日：2001-08-30

    申请人： Harvey C. Nathanson ,  Philip C. Smith ,  R. Chris Clarke ,  David M. Krafcsik ,  Lawrence E. Dickens

    发明人： Harvey C. Nathanson ,  Philip C. Smith ,  R. Chris Clarke ,  David M. Krafcsik ,  Lawrence E. Dickens

    IPC分类号： H01L2974

    CPC分类号： H01L29/66666 ,  H01L29/435 ,  H01L29/7827

    摘要： A solid state microwave switch having a plurality of adjacent parallel fingers covered with an oxide layer. One end of a finger is an N+ source region while the other end is an N+ drain region, with a current conducting N region between them. The oxide layer is covered with a gate layer to which a gate signal is applied for control of current between the N+ regions through the N region. The gate layer is highly resistive and has a sheet resistance on the order of millions of ohms per square. The length from the source to drain region is around 2 &mgr;m, and the fingers are spaced with a pitch of around 1 &mgr;m.

    摘要翻译： 一种固态微波开关，具有被氧化物层覆盖的多个相邻的平行指状物。 手指的一端是N +源极区域，而另一端是N +漏极区域，它们之间具有导电的N区域。 氧化物层被施加栅极信号的栅极层覆盖，以控制通过N区域的N +区域之间的电流。 栅极层是高电阻性的，并且具有数百万欧姆/平方的数量级的薄层电阻。 从源极到漏极区域的长度约为2μm，并且指状物以约1um的间距间隔开。

    Programmable redundancy circuit
    6.
    发明授权
    Programmable redundancy circuit 失效
    可编程冗余电路

    公开(公告)号：US4556975A

    公开(公告)日：1985-12-03

    申请号：US464259

    申请日：1983-02-07

    申请人： Teresa B. Smith ,  Philip C. Smith

    发明人： Teresa B. Smith ,  Philip C. Smith

    IPC分类号： G11C11/401 ,  G11C29/00 ,  G11C29/04 ,  G11C7/00

    CPC分类号： G11C29/789

    摘要： A memory redundancy circuit is described incorporating a sequential row or column counter associated with a plurality of programmable row or column decoders. The sequential row counter includes a sequence circuit for each programmable row decoder. The sequence circuit and programmable row decoder incorporate fixed and variable threshold transistors such as metal nitride oxide semiconductor (MNOS) transistors. The threshold of the variable threshold transistors are switched in response to address signals and control signals to permit redundancy. A disable circuit is also described to permit removal of the redundancy circuits to permit retest of the other circuits.

    摘要翻译： 描述存储器冗余电路，其结合有与多个可编程行或列解码器相关联的顺序行或列计数器。 顺序行计数器包括用于每个可编程行解码器的序列电路。 序列电路和可编程行解码器结合固定和可变阈值晶体管，例如金属氮化物半导体（MNOS）晶体管。 响应于地址信号和控制信号来切换可变阈值晶体管的阈值以允许冗余。 还描述了禁用电路以允许去除冗余电路以允许其他电路的重新测试。

    Fast access non-volatile memory
    7.
    发明授权
    Fast access non-volatile memory 失效
    快速访问非易失性存储器

    公开(公告)号：US4415993A

    公开(公告)日：1983-11-15

    申请号：US324349

    申请日：1981-11-23

    申请人： Philip C. Smith ,  John L. Fagan

    发明人： Philip C. Smith ,  John L. Fagan

    IPC分类号： G11C17/00 ,  G11C11/34 ,  G11C16/06 ,  G11C16/08 ,  G11C16/34 ,  G11C13/00

    CPC分类号： G11C16/08 ,  G11C16/3418 ,  G11C16/3431

    摘要： A memory apparatus having a row and column decoder for controlling the read and write function to a transistor memory pair. A single power/chip select pad is utilized to both power the memory and select the memory chip. External control signals are applied directly to critical internal node within the memory apparatus.

    摘要翻译： 一种具有用于控制对晶体管存储器对的读和写功能的行和列解码器的存储装置。 使用单个电源/芯片选择焊盘来为存储器供电并选择存储器芯片。 外部控制信号直接应用于存储装置内的关键内部节点。

    Memory array address buffer with level shifting
    8.
    发明授权
    Memory array address buffer with level shifting 失效
    存储器阵列地址缓冲器，具有电平转换

    公开(公告)号：US4159540A

    公开(公告)日：1979-06-26

    申请号：US929625

    申请日：1978-07-31

    申请人： Philip C. Smith ,  John L. Fagan

    发明人： Philip C. Smith ,  John L. Fagan

    IPC分类号： G11C5/02 ,  G11C8/10 ,  G11C11/30 ,  G11C11/34 ,  G11C16/04 ,  G11C16/08 ,  H03K3/356 ,  H03K19/0185 ,  G11C8/00

    CPC分类号： G11C16/08 ,  G11C11/30 ,  G11C16/0466 ,  G11C5/025 ,  G11C8/10 ,  H03K19/01855 ,  H03K3/356008

    摘要： An improved electrically alterable non-volatile memory for storing information is described incorporating an array of memory cells composed of variable threshold field effect transistors, means for writing and reading information into and out of the array which includes precharged circuitry to provide predetermined voltages on the gate, source and drain electrodes of the transistors in the array before writing or reading and row decode circuitry on both sides of the array to permit closer spacing of the variable threshold transistors in the array.

    摘要翻译： 描述了一种用于存储信息的改进的可电气可变非易失性存储器，其结合由可变阈值场效应晶体管组成的存储器单元阵列，用于将信息写入和读出阵列的装置，该阵列包括预充电电路以在栅极上提供预定电压 在写入或读取之前的阵列中的晶体管的源极和漏极电极以及阵列两侧的行解码电路，以允许阵列中的可变阈值晶体管的更紧密的间隔。

    Memory using interleaved rows to permit closer spacing
    9.
    发明授权
    Memory using interleaved rows to permit closer spacing 失效
    使用交错行的存储器允许更近的间隔

    公开(公告)号：US4124900A

    公开(公告)日：1978-11-07

    申请号：US837791

    申请日：1977-09-29

    申请人： Philip C. Smith ,  John L. Fagan

    发明人： Philip C. Smith ,  John L. Fagan

    IPC分类号： G11C5/02 ,  G11C8/10 ,  G11C11/30 ,  G11C11/34 ,  G11C16/04 ,  G11C16/08 ,  H03K3/356 ,  H03K19/0185 ,  G11C5/06 ,  G11C8/00

    CPC分类号： G11C16/08 ,  G11C11/30 ,  G11C16/0466 ,  G11C5/025 ,  G11C8/10 ,  H03K19/01855 ,  H03K3/356008

    摘要： An improved electrically alterable non-volatile memory for storing information is described incorporating an array of memory cells composed of variable threshold field effect transistors, means for writing and reading information into and out of the array which includes precharged circuitry to provide predetermined voltages on the gate, source and drain electrodes of the transistors in the array before writing or reading and row decode circuitry on both sides of the array to permit closer spacing of the variable threshold transistors in the array.

    摘要翻译： 描述了一种用于存储信息的改进的可电气可变非易失性存储器，其结合由可变阈值场效应晶体管组成的存储器单元阵列，用于将信息写入和读出阵列的装置，该阵列包括预充电电路以在栅极上提供预定电压 在写入或读取之前的阵列中的晶体管的源极和漏极电极以及阵列两侧的行解码电路，以允许阵列中的可变阈值晶体管的更紧密的间隔。

    Segmented Retention Closure
    10.
    发明申请
    Segmented Retention Closure 审中-公开
    分段保持闭合

    公开(公告)号：US20160362230A1

    公开(公告)日：2016-12-15

    申请号：US14736641

    申请日：2015-06-11

    申请人： Philip C. Smith

    发明人： Philip C. Smith

    IPC分类号： B65D43/02 ,  A63B47/00 ,  B65D85/42 ,  A63B60/60 ,  B65D51/26 ,  B65D85/04

    CPC分类号： B65D43/0204 ,  A63B47/00 ,  A63B60/60 ,  A63B2102/18 ,  B65D47/04 ,  B65D51/1605 ,  B65D51/26 ,  B65D85/04 ,  B65D85/42

    摘要： A segmented retention closure forms a lid that detachably attaches to a container for holding and orienting an item, such as debris, a gardening tool, a baseball, and a string of lights. The closure comprises a panel and a rim. The rim detachably attaches the panel to an opening of the container. The panel substantially covers an opening in the container. The panel has a perimeter region and a central region. Gaps extend from the perimeter region to the central region. The gaps segregates the panel into panel sections, such that each panel section has freedom to bend, laterally flex, and fold in relation to the other sections. An aperture positions concentric to the panel and in communication with the gap. The aperture also has adjustable size and dimension, such that the aperture and the gap can conform to the shape and dimensions of the item for reception.

    摘要翻译： 分段的保持闭合件形成可拆卸地附接到容器的盖子，用于保持和定向物品，例如碎片，园艺工具，棒球和一串灯。 封闭件包括面板和边缘。 边缘可拆卸地将面板附接到容器的开口。 面板基本上覆盖容器中的开口。 面板具有周边区域和中心区域。 间隙从周边地区延伸到中部地区。 间隙将面板分隔成面板部分，使得每个面板部分具有相对于其他部分弯曲，横向弯曲和折叠的自由度。 光阑与面板同心并与间隙连通。 孔径也具有可调节的尺寸和尺寸，使得孔和间隙可以符合用于接收的物品的形状和尺寸。