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    Multilayer structure having a (111)-oriented buffer layer
    5.
    发明授权
    Multilayer structure having a (111)-oriented buffer layer 失效
    具有（111）取向缓冲层的多层结构

    公开(公告)号：US5347157A

    公开(公告)日：1994-09-13

    申请号：US992213

    申请日：1992-12-17

    申请人： Liang-Sun Hung ,  John A. Agostinelli ,  Jose M. Mir

    发明人： Liang-Sun Hung ,  John A. Agostinelli ,  Jose M. Mir

    IPC分类号： G02B6/12 ,  C30B23/02 ,  C30B29/16 ,  G02B6/13 ,  G02F1/37 ,  H01L21/28 ,  H01L29/43 ,  H01S5/00 ,  H01L29/04 ,  H01L29/161

    CPC分类号： G02F1/37 ,  C30B23/02 ,  C30B29/68 ,  G02B6/131

    摘要： A multilayer structure comprising in order: a (111)-oriented single crystal substrate and an epitaxial metal oxide buffer layer. The substrate is doped or undoped. The substrate is a semiconductor selected from the group consisting of Si compounds, Ge compounds, and compounds having at least one element selected from the group consisting of Al, Ga, and In and at least one element selected from the group consisting of N, P, As, and Sb. The substrate defines a substrate superlattice dimension equal to 3 times a sublattice constant of the substrate. The epitaxial metal oxide buffer layer has a three-fold rotation symmetry about the substrate (111) direction. The buffer layer defines a buffer layer superlattice dimension equal to 4 times the oxygen-to-oxygen lattice spacing of the buffer layer. The buffer layer superlattice dimension is within 15 percent of the substrate superlattice dimension.

    摘要翻译： 一种多层结构，其顺序包括：（111）取向的单晶衬底和外延金属氧化物缓冲层。 衬底是掺杂或未掺杂的。 衬底是选自Si化合物，Ge化合物和具有选自Al，Ga和In中的至少一种元素的化合物的半导体，以及选自N，P ，As和Sb。 衬底限定了等于衬底的次晶格常数的3倍的衬底超晶格尺寸。 外延金属氧化物缓冲层围绕基板（111）方向具有三重旋转对称性。 缓冲层限定了等于缓冲层的氧 - 氧晶格间距的4倍的缓冲层超晶格尺寸。 缓冲层超晶格尺寸在衬底超晶格尺寸的15％以内。

    Josephson junction device comprising high critical temperature crystalline copper superconductive layers
    10.
    发明授权
    Josephson junction device comprising high critical temperature crystalline copper superconductive layers 失效
    约瑟夫逊结器件包括高临界温度的结晶铜超导层

    公开(公告)号：US5552373A

    公开(公告)日：1996-09-03

    申请号：US867063

    申请日：1992-04-10

    申请人： John A. Agostinelli ,  Jose M. Mir ,  Gerrit Lubberts ,  Samuel Chen

    发明人： John A. Agostinelli ,  Jose M. Mir ,  Gerrit Lubberts ,  Samuel Chen

    IPC分类号： H01L39/22 ,  H01L39/24 ,  H01L29/06

    CPC分类号： H01L39/2496 ,  H01L39/225

    摘要： A Josephson junction device is disclosed having a substrate upon which are located overlying and underlying high critical temperature crystalline oxide superconductive layers separated by an interposed impedance controlling layer. The underlying superconductive layer is limited to a selected area of the substrate while the overlying and interposed layers overlie only a portion of the underlying superconductive layer. Nonsuperconducting oxide layer portions laterally abut the superconductive and interposed layers. A first electrical conductor is attached to the underlying superconductive layer at a location free of overlying oxide layers, and a second electrical conductor contacts the overlying superconductive layer and extends laterally over the adjacent laterally abutting nonsuperconductive layer portion. A process is disclosed for preparing the Josephson junction device in which a Josephson junction layer sequence is deposited on a substrate, a portion of the Josephson junction layer sequence laterally abutting a selected area is converted to a nonsuperconducting form, within the selected area overlying layers are removed from the superconducting layer nearer the substrate, and an electrical conductor extends laterally from the superconducting layer farther removed from the substrate to the laterally abutting nonsuperconducting layer.

    摘要翻译： 公开了一种约瑟夫逊结器件，其具有衬底，位于其上并且位于由插入的阻抗控制层分开的高临界温度结晶氧化物超导层之下。 底层的超导层限于衬底的选定区域，而覆盖和插入的层仅覆盖下面的超导层的一部分。 非导电氧化物层部分横向邻接超导和插入的层。 第一电导体在没有覆盖氧化物层的位置处附接到下面的超导层，并且第二电导体接触上覆的超导层并横向延伸在相邻的横向邻接的非超导电导层部分上。 公开了一种制备约瑟夫逊结结器件的方法，其中约瑟夫逊结层序列沉积在衬底上，约束结层序列横向邻接所选区域的部分被转换为非超导形式，在覆盖层的选定区域内 从超导层离开更靠近衬底的电导体，并且电导体从更远离衬底的超导层横向延伸到横向邻接的非超导层。