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28 条记录 (耗时 0.026 秒)

    Multilayer structure having a (111)-oriented buffer layer
    3.
    发明授权
    Multilayer structure having a (111)-oriented buffer layer 失效
    具有（111）取向缓冲层的多层结构

    公开(公告)号：US5347157A

    公开(公告)日：1994-09-13

    申请号：US992213

    申请日：1992-12-17

    申请人： Liang-Sun Hung ,  John A. Agostinelli ,  Jose M. Mir

    发明人： Liang-Sun Hung ,  John A. Agostinelli ,  Jose M. Mir

    IPC分类号： G02B6/12 ,  C30B23/02 ,  C30B29/16 ,  G02B6/13 ,  G02F1/37 ,  H01L21/28 ,  H01L29/43 ,  H01S5/00 ,  H01L29/04 ,  H01L29/161

    CPC分类号： G02F1/37 ,  C30B23/02 ,  C30B29/68 ,  G02B6/131

    摘要： A multilayer structure comprising in order: a (111)-oriented single crystal substrate and an epitaxial metal oxide buffer layer. The substrate is doped or undoped. The substrate is a semiconductor selected from the group consisting of Si compounds, Ge compounds, and compounds having at least one element selected from the group consisting of Al, Ga, and In and at least one element selected from the group consisting of N, P, As, and Sb. The substrate defines a substrate superlattice dimension equal to 3 times a sublattice constant of the substrate. The epitaxial metal oxide buffer layer has a three-fold rotation symmetry about the substrate (111) direction. The buffer layer defines a buffer layer superlattice dimension equal to 4 times the oxygen-to-oxygen lattice spacing of the buffer layer. The buffer layer superlattice dimension is within 15 percent of the substrate superlattice dimension.

    摘要翻译： 一种多层结构，其顺序包括：（111）取向的单晶衬底和外延金属氧化物缓冲层。 衬底是掺杂或未掺杂的。 衬底是选自Si化合物，Ge化合物和具有选自Al，Ga和In中的至少一种元素的化合物的半导体，以及选自N，P ，As和Sb。 衬底限定了等于衬底的次晶格常数的3倍的衬底超晶格尺寸。 外延金属氧化物缓冲层围绕基板（111）方向具有三重旋转对称性。 缓冲层限定了等于缓冲层的氧 - 氧晶格间距的4倍的缓冲层超晶格尺寸。 缓冲层超晶格尺寸在衬底超晶格尺寸的15％以内。

    Method of forming a barrier layer arrangement for conductive layers on silicon substrates
    4.
    发明授权
    Method of forming a barrier layer arrangement for conductive layers on silicon substrates 失效
    在硅衬底上形成用于导电层的阻挡层布置的方法

    公开(公告)号：US4994434A

    公开(公告)日：1991-02-19

    申请号：US326813

    申请日：1989-03-21

    申请人： Liang-Sun Hung ,  John A. Agostinelli

    发明人： Liang-Sun Hung ,  John A. Agostinelli

    IPC分类号： H01L39/24

    CPC分类号： H01L39/2461 ,  Y10S505/73 ,  Y10S505/739 ,  Y10S505/817 ,  Y10S505/818 ,  Y10S505/826 ,  Y10S505/832 ,  Y10S505/92

    摘要： A process is disclosed of producing on a crystalline silicon substrate a barrier layer triad capable of protecting a rare earth alkaline earth copper oxide conductive coating from direct interaction with the substrate. A silica layer of at least 2000 .ANG. in thickness is deposited on the silicon substrate, and followed by deposition on the silica layer of a Group 4 heavy metal to form a layer having a thickness in the range of from 1500 to 3000 .ANG.. Heating the layers in the absence of a reactive atmosphere to permit oxygen migration from the silica layer forms a barrier layer triad consisting of a silica first triad layer located adjacent the silicon substrate, a heavy Group 4 metal oxide third triad layer remote from the silicon substrate, and a Group 4 heavy metal silicide second triad layer interposed between the first and third triad layers.

    摘要翻译： 公开了一种在晶体硅衬底上制备能够保护稀土类碱土铜氧化物导电涂层与衬底直接相互作用的阻挡层三元组的方法。 将厚度至少为2000的二氧化硅层沉积在硅衬底上，随后沉积在第4组重金属的二氧化硅层上，以形成厚度在1500至3000范围内的层。 在没有反应气氛的情况下加热层以允许氧从二氧化硅层迁移形成由位于硅衬底附近的二氧化硅第一三元组构成的阻挡层三元组，远离硅衬底的重的第4族金属氧化物第三三电极层 以及插入在第一和第三三单层之间的第4族重金属硅化物第二三单元组层。

    Red-emitting organic electroluminescent elements
    10.
    发明授权
    Red-emitting organic electroluminescent elements 失效
    红色发光有机电致发光元件

    公开(公告)号：US07037600B2

    公开(公告)日：2006-05-02

    申请号：US10391265

    申请日：2003-03-18

    申请人： Shuit-Tong Lee ,  Chun-Sing Lee ,  Liang-Sun Hung ,  Baoxiu Mi ,  Zhi-Qiang Gao

    发明人： Shuit-Tong Lee ,  Chun-Sing Lee ,  Liang-Sun Hung ,  Baoxiu Mi ,  Zhi-Qiang Gao

    IPC分类号： H05B33/14 ,  C09K11/08

    CPC分类号： C09K11/06 ,  C07C15/20 ,  C07C25/22 ,  C09K2211/1011 ,  C09K2211/1014 ,  C09K2211/1029 ,  H01L51/0056 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0081 ,  H05B33/14 ,  Y10S428/917

    摘要： Compounds of formula [I] wherein each R1 to R8 is independently selected from the group consisting of halogen atoms, cyano, isocyano, mercapto, amino, carbonyl, carboxy, sulfone, nitro and hydroxy groups, and optionally substituted alkyl, alkenyl, alkynyl, haloalkyl, hydroxyalkyl, aryl, alkoxy, aryloxy, alkylamino, arylamino, alkylarylamino, amide, alkylthio, arylthio, alkoxy carbonyl, siloxy, cyclic hydrocarbon or heterocyclic groups; each x is independently zero, one, two or three; each y is independently zero or one; and each z is independently zero, one, two or three are useful in organic electroluminescence devices. Such compounds are disclosed herein, as well as organic electroluminescence devices using the compounds in the emissive layer.

    摘要翻译： 其中每个R 1至R 8的式[I]化合物独立地选自卤素原子，氰基，异氰基，巯基，氨基，羰基，羧基， 砜，硝基和羟基，以及任选取代的烷基，烯基，炔基，卤代烷基，羟基烷基，芳基，烷氧基，芳氧基，烷基氨基，芳基氨基，烷基芳基氨基，酰胺，烷硫基，芳硫基，烷氧基羰基，甲硅烷氧基，环状烃或杂环基。 每个x独立为零，一，二或三; 每个y独立为零或一个; 并且每个z独立地为零，一个，二个或三个在有机电致发光器件中是有用的。 这些化合物在本文中公开，以及在发光层中使用化合物的有机电致发光器件。