摘要:
A pulsed fiber laser oscillator and laser systems incorporating such laser oscillators are presented. The laser oscillator first includes a light generating module which generates optical pulses having an initial spectral profile. A spectrum tailoring module tailors the initial spectral profile of the optical pulses by imposing a phase variation on each optical pulse according to an optimized phase varying function. The optimized phase varying function has one of a rectified sinusoidal shape, a parabolic shape and a rectified parabolic shape. Laser systems incorporating such oscillators may be of a MOPA configuration, and may further include a nonlinear crystal for frequency conversion or a bulk solid-state amplifier.
摘要:
A method for stabilizing an output of a pulsed laser system includes a directly modulated laser diode by mitigating the effect of switching transients on the temporal shape of the outputted pulses. The method includes controlling a pulse shaping signal to define, over time, processing and conditioning periods. During the processing periods, the pulse shaping signal has an amplitude profile tailored to produce the desired temporal shape of the output. Each conditioning period either immediately precedes or follows a processing period. During a given processing period, the amplitude profile of the pulse shaping signal is tailored so that the drive current of the laser diode is lower than its maximum value during the corresponding processing period, and is of the same order of magnitude as the laser threshold current of the laser diode. In this manner, the stability of the output during the corresponding processing period is improved.
摘要:
Methods stabilize the output of a pulsed laser system using pulse shaping capabilities. In some embodiments, transient effects following a transition between a QCW regime and a pulse shaping regime are mitigated by ensuring that the average QCW optical power substantially corresponds to the average pulsed optical power outputted in a steady-state operation of the pulsed laser system in the pulse shaping regime. The QCW signal or the pulse shaping signal may be adapted for this purpose. In other embodiments, transient effects associated with non-process pulses emitted between series of consecutive process pulses are mitigated through the proper use of sequential pulse shaping.
摘要:
Methods stabilize the output of a pulsed laser system using pulse shaping capabilities. In some embodiments, transient effects following a transition between a QCW regime and a pulse shaping regime are mitigated by ensuring that the average QCW optical power substantially corresponds to the average pulsed optical power outputted in a steady-state operation of the pulsed laser system in the pulse shaping regime. The QCW signal or the pulse shaping signal may be adapted for this purpose. In other embodiments, transient effects associated with non-process pulses emitted between series of consecutive process pulses are mitigated through the proper use of sequential pulse shaping.
摘要:
A method for stabilizing an output of a pulsed laser system includes a directly modulated laser diode by mitigating the effect of switching transients on the temporal shape of the outputted pulses. The method includes controlling a pulse shaping signal to define, over time, processing and conditioning periods. During the processing periods, the pulse shaping signal has an amplitude profile tailored to produce the desired temporal shape of the output. Each conditioning period either immediately precedes or follows a processing period. During a given processing period, the amplitude profile of the pulse shaping signal is tailored so that the drive current of the laser diode is lower than its maximum value during the corresponding processing period, and is of the same order of magnitude as the laser threshold current of the laser diode. In this manner, the stability of the output during the corresponding processing period is improved.
摘要:
Laser systems and methods for providing an output light beam having a target spatial pattern are provided. A light generating module generates an input light beam, whose spectral profile is then tailored by imposing thereon a controllable phase modulation. The obtained spectrally tailored light beam is dispersed, using at least one spatially-dispersive element to provide an output light beam having a spatial profile which is a function of the spectral profile of the spectrally tailored light beam, The phase modulation is selected in view of the spectral profile of the input light beam and of the dispersion characteristics of the at least one spatially-dispersive element so that the spatial pattern of the output light beam matches the target spatial pattern therefor.
摘要:
Laser systems and methods for providing an output light beam having a target spatial pattern are provided. A light generating module generates an input light beam, whose spectral profile is then tailored by imposing thereon a controllable phase modulation. The obtained spectrally tailored light beam is dispersed, using at least one spatially-dispersive element to provide an output light beam having a spatial profile which is a function of the spectral profile of the spectrally tailored light beam, The phase modulation is selected in view of the spectral profile of the input light beam and of the dispersion characteristics of the at least one spatially-dispersive element so that the spatial pattern of the output light beam matches the target spatial pattern therefor.
摘要:
UV laser cutting throughput through silicon and like materials is improved by dividing a long cut path (112) into short segments (122), from about 10 μm to 1 mm. The laser output (32) is scanned within a first short segment (122) for a predetermined number of passes before being moved to and scanned within a second short segment (122) for a predetermined number of passes. The bite size, segment size (126), and segment overlap (136) can be manipulated to minimize the amount and type of trench backfill. Real-time monitoring is employed to reduce rescanning portions of the cut path 112 (112) where the cut is already completed. Polarization direction of the laser output (32) is also correlated with the cutting direction to further enhance throughput. This technique can be employed to cut a variety of materials with a variety of different lasers and wavelengths. A multi-step process can optimize the laser processes for each individual layer.
摘要:
UV laser cutting throughput through silicon and like materials is improved by dividing a long cut path (112) into short segments (122), from about 10 μm to 1 mm. The laser output (32) is scanned within a first short segment (122) for a predetermined number of passes before being moved to and scanned within a second short segment (122) for a predetermined number of passes. The bite size, segment size (126), and segment overlap (136) can be manipulated to minimize the amount and type of trench backfill. Real-time monitoring is employed to reduce rescanning portions of the cut path 112 (112) where the cut is already completed. Polarization direction of the laser output (32) is also correlated with the cutting direction to further enhance throughput. This technique can be employed to cut a variety of materials with a variety of different lasers and wavelengths. A multi-step process can optimize the laser processes for each individual layer.
摘要:
Methods and systems process a semiconductor substrate having a plurality of structures to be selectively irradiated with multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects a first target location on or within the semiconductor substrate. The method also generates a second laser beam that propagates along a second laser beam axis that intersects a second target location on or within the semiconductor substrate. The second target location is offset from the first target location in a direction perpendicular to the lengthwise direction of the rows by some amount such that, when the first target location is a structure on a first row of structures, the second target location is a structure or between two adjacent structures on a second row distinct from the first row. The method moves the semiconductor substrate relative to the first and second laser axes in a direction approximately parallel to the rows of structures, so as to pass the first target location along the first row to irradiate for a first time selected structures in the first row, and so as to simultaneously pass the second target location along the second row to irradiate for a second time structures previously irradiated by the first laser beam during a previous pass of the first target location along the second row.