BIAS CONTROL STRUCTURE FOR AVALANCHE PHOTODIODES

    公开(公告)号:US20190229227A1

    公开(公告)日:2019-07-25

    申请号:US16253475

    申请日:2019-01-22

    Abstract: According to some implementations, an avalanche photodiode may include a photon absorbing layer to absorb photons of an optical beam and to provide a response. The avalanche photodiode may include a gain response layer to provide a gain to the response. The avalanche photodiode may include a bias control structure connected to the gain response layer to control an electric field in the photon absorbing layer and the gain response layer.

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