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公开(公告)号：US12212117B2
公开(公告)日：2025-01-28
申请号：US18495848
申请日：2023-10-27
Applicant: Marvell Asia Pte Ltd
Inventor： Xiaoguang He , Radhakrishnan L. Nagarajan
Abstract: A laser device based on silicon photonics with in-cavity power monitor includes a gain chip, a reflector, and a photodiode. The gain chip is mounted on a silicon photonics substrate and is configured to emit light from an active region bounded between a frontend facet and a backend facet. The reflector is configured to reflect the light in a cavity formed between the reflector and the frontend facet through which a laser light is output. The photodiode is coupled to one or more waveguides in the cavity by a splitter disposed directly in an optical path between the reflector and a component positioned in the cavity. The photodiode is configured to measure power of light propagating through the cavity between the reflector and the component.
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公开(公告)号：US20240258761A1
公开(公告)日：2024-08-01
申请号：US18389872
申请日：2023-12-20
Applicant: MARVELL ASIA PTE LTD
Inventor： Xiaoguang He , Radhakrishnan Nagarajan
Abstract: An optoelectronic device includes a gain medium configured to amplify laser radiation within a given gain band. A resonant optical cavity contains the gain medium and includes first and second reflectors disposed on first and second sides of the gain medium. A comb filter between the first and second reflectors and configured to pass a set of distinct wavelength sub-bands within the gain band, the set of distinct wavelength sub-bands defining a comb. A plurality of optical ring resonators between the first and second reflectors in series with the comb filter have tunable resonant wavelengths in proximity to different, respective wavelength sub-bands of the comb. A control circuit applies respective control voltages to the optical ring resonators so as to tune the respective resonant wavelengths relative to the respective wavelength sub-bands, thereby modulating the sub-bands in the laser radiation that is output from the device.
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Patent Agency Ranking
公开(公告)号：US11728614B2
公开(公告)日：2023-08-15
申请号：US17895440
申请日：2022-08-25
Applicant: Marvell Asia Pte Ltd.
Inventor： Xiaoguang He , Radhakrishnan L. Nagarajan
IPC: H04B10/00 , H01S5/00 , H01S5/02 , H01S5/323 , H04B10/27 , H04B10/07 , G01R31/26 , G02B6/12 , H01S5/0234 , H01S5/12
CPC classification number: H01S5/0042 , G01R31/2635 , G02B6/12004 , H01S5/021 , H01S5/0234 , H01S5/323 , H04B10/07 , H04B10/27 , H01S5/12
Abstract: A photonics device includes a silicon wafer including a cathode region, an anode region, a trench region formed between the cathode region and the anode region, and a linear ridge formed between the cathode region and the anode region. A laser diode chip is mounted on the silicon wafer. A conductor layer disposed between the silicon wafer and the laser diode chip includes a first section disposed between the laser diode chip and the cathode region on a first side of the trench to electrically connect the laser diode chip to a cathode electrode of the photonics device and a second section disposed between the anode region and the laser diode chip on a second side of the trench to electrically connect the laser diode chip to an anode electrode of the photonics device.
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公开(公告)号：US20250096530A1
公开(公告)日：2025-03-20
申请号：US18764252
申请日：2024-07-04
Applicant: Marvell Asia Pte Ltd
Inventor： Xiaoguang He , Radhakrishnan Nagarajan
Abstract: An optoelectronic device includes a gain medium having first and second ends and configured to amplify laser radiation within a gain band having a peak at a given wavelength. A laser cavity, containing the gain medium, includes a first reflector disposed on a first side of the gain medium and a second reflector disposed on a second side of the gain medium, opposite the first side. The second reflector has a reflectance as a function of wavelength that is tunable so as to reduce a reflectance of the second reflector at the peak of the gain band, thereby broadening a spectrum of the laser radiation emitted from the gain medium through the second reflector.
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公开(公告)号：US11929592B2
公开(公告)日：2024-03-12
申请号：US17024473
申请日：2020-09-17
Applicant: MARVELL ASIA PTE LTD.
Inventor： Xiaoguang He , Radhakrishnan L. Nagarajan
CPC classification number: H01S5/309 , H01S5/026 , H01S5/028 , H01S5/0287 , H01S5/068 , H01S5/142 , H01S5/50 , H01S5/021 , H01S5/0218 , H01S5/101 , H01S5/1039 , H01S5/1085
Abstract: A semiconductor optical amplifier for high-power operation includes a gain medium having a multilayer structure sequentially laid with a P-layer, an active layer, a N-layer from an upper portion to a lower portion in cross-section thereof. The gain medium is extendedly laid with a length L from a front facet to a back facet. The active layer includes multiple well layers formed by undoped semiconductor material and multiple barrier layers formed by n-doped semiconductor materials. Each well layer is sandwiched by a pair of barrier layers. The front facet is characterized by a first reflectance Rf and the back facet is characterized by a second reflectance Rb. The gain medium has a mirror loss αm about 40-200 cm−1 given by: αm=(½L)ln{1/(Rf×Rb)}.
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公开(公告)号：US11575245B2
公开(公告)日：2023-02-07
申请号：US16805526
申请日：2020-02-28
Applicant: Marvell Asia Pte. Ltd.
Inventor： Xiaoguang He , Radhakrishnan L. Nagarajan , Brian Taylor
IPC: G02F1/01 , H01S5/10 , H01S5/323 , H01S5/028 , H01S5/0234
Abstract: A thin-film device for a wavelength-tunable semiconductor laser. The device includes a cavity between a high-reflectivity facet and an anti-reflection facet designed to emit a laser light of a wavelength in a tunable range determined by two Vernier-ring resonators with a joint-free-spectral-range between a first wavelength and a second wavelength. The device further includes a film including multiple pairs of a first layer and a second layer sequentially stacking to an outer side of the high-reflectivity facet. Each layer in each pair has one unit of respective optical thickness except one first or second layer in one pair having a larger optical thickness. The film is configured to produce inner reflectivity of the laser light from the high-reflectivity facet at least >90% for wavelengths in the tunable range starting from the first wavelength but at least
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公开(公告)号：US11444429B2
公开(公告)日：2022-09-13
申请号：US17169037
申请日：2021-02-05
Applicant: Marvell Asia Pte, Ltd.
Inventor： Xiaoguang He , Radhakrishnan L. Nagarajan
IPC: H04B10/00 , H01S5/00 , H01S5/02 , H01S5/323 , H04B10/27 , H04B10/07 , G01R31/26 , G02B6/12 , H01S5/0234 , H01S5/12
Abstract: A photonics device includes a silicon wafer including an upper surface region, a trench region, and a ridge structure. The ridge structure electrically isolates the upper surface region from the trench region. A laser diode chip flip-bonded onto the silicon wafer includes an electrode region bonded with the upper surface region, a gain region bonded with the trench region, and an isolation region bonded with the ridge structure. The isolation region electrically isolates the gain region from the electrode region. A conductor layer arranged between the silicon wafer and the laser diode chip includes a first section electrically connecting the gain region to a first electrode of the photonics device and a second section configured to electrically connect the electrode region to a second electrode of the photonics device. The first section is electrically isolated from the second section by the isolation region.
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