Power monitor for silicon-photonics-based laser

    公开(公告)号:US12212117B2

    公开(公告)日:2025-01-28

    申请号:US18495848

    申请日:2023-10-27

    Abstract: A laser device based on silicon photonics with in-cavity power monitor includes a gain chip, a reflector, and a photodiode. The gain chip is mounted on a silicon photonics substrate and is configured to emit light from an active region bounded between a frontend facet and a backend facet. The reflector is configured to reflect the light in a cavity formed between the reflector and the frontend facet through which a laser light is output. The photodiode is coupled to one or more waveguides in the cavity by a splitter disposed directly in an optical path between the reflector and a component positioned in the cavity. The photodiode is configured to measure power of light propagating through the cavity between the reflector and the component.

    Laser with intracavity modulator
    2.
    发明公开

    公开(公告)号:US20240258761A1

    公开(公告)日:2024-08-01

    申请号:US18389872

    申请日:2023-12-20

    CPC classification number: H01S3/107 H01S3/082 H01S3/083

    Abstract: An optoelectronic device includes a gain medium configured to amplify laser radiation within a given gain band. A resonant optical cavity contains the gain medium and includes first and second reflectors disposed on first and second sides of the gain medium. A comb filter between the first and second reflectors and configured to pass a set of distinct wavelength sub-bands within the gain band, the set of distinct wavelength sub-bands defining a comb. A plurality of optical ring resonators between the first and second reflectors in series with the comb filter have tunable resonant wavelengths in proximity to different, respective wavelength sub-bands of the comb. A control circuit applies respective control voltages to the optical ring resonators so as to tune the respective resonant wavelengths relative to the respective wavelength sub-bands, thereby modulating the sub-bands in the laser radiation that is output from the device.

    Laser with Tunable Reflector
    4.
    发明申请

    公开(公告)号:US20250096530A1

    公开(公告)日:2025-03-20

    申请号:US18764252

    申请日:2024-07-04

    Abstract: An optoelectronic device includes a gain medium having first and second ends and configured to amplify laser radiation within a gain band having a peak at a given wavelength. A laser cavity, containing the gain medium, includes a first reflector disposed on a first side of the gain medium and a second reflector disposed on a second side of the gain medium, opposite the first side. The second reflector has a reflectance as a function of wavelength that is tunable so as to reduce a reflectance of the second reflector at the peak of the gain band, thereby broadening a spectrum of the laser radiation emitted from the gain medium through the second reflector.

    Thin-film filter for tunable laser

    公开(公告)号:US11575245B2

    公开(公告)日:2023-02-07

    申请号:US16805526

    申请日:2020-02-28

    Abstract: A thin-film device for a wavelength-tunable semiconductor laser. The device includes a cavity between a high-reflectivity facet and an anti-reflection facet designed to emit a laser light of a wavelength in a tunable range determined by two Vernier-ring resonators with a joint-free-spectral-range between a first wavelength and a second wavelength. The device further includes a film including multiple pairs of a first layer and a second layer sequentially stacking to an outer side of the high-reflectivity facet. Each layer in each pair has one unit of respective optical thickness except one first or second layer in one pair having a larger optical thickness. The film is configured to produce inner reflectivity of the laser light from the high-reflectivity facet at least >90% for wavelengths in the tunable range starting from the first wavelength but at least

    Light source for integrated silicon photonics

    公开(公告)号:US11444429B2

    公开(公告)日:2022-09-13

    申请号:US17169037

    申请日:2021-02-05

    Abstract: A photonics device includes a silicon wafer including an upper surface region, a trench region, and a ridge structure. The ridge structure electrically isolates the upper surface region from the trench region. A laser diode chip flip-bonded onto the silicon wafer includes an electrode region bonded with the upper surface region, a gain region bonded with the trench region, and an isolation region bonded with the ridge structure. The isolation region electrically isolates the gain region from the electrode region. A conductor layer arranged between the silicon wafer and the laser diode chip includes a first section electrically connecting the gain region to a first electrode of the photonics device and a second section configured to electrically connect the electrode region to a second electrode of the photonics device. The first section is electrically isolated from the second section by the isolation region.

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