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    Structure of integrated circuitry and a method of forming a conductive via
    1.
    发明授权
    Structure of integrated circuitry and a method of forming a conductive via 有权

    公开(公告)号：US09960114B1

    公开(公告)日：2018-05-01

    申请号：US15585396

    申请日：2017-05-03

    Applicant: Micron Technology, Inc.

    Inventor： Sourabh Dhir ,  Andrew L. Li ,  Sanh D. Tang ,  Naoyoshi Kobayashi ,  Katsumi Koge

    IPC: H01L23/522 ,  H01L21/768

    CPC classification number: H01L21/76837 ,  H01L27/10814 ,  H01L27/10885

    Abstract: A method of forming a conductive via comprises forming a structure comprising an elevationally-extending-conductive via and a conductive line electrically coupled to and crossing above the conductive via. The conductive line comprises first conductive material and the conductive via comprises second conductive material of different composition from that of the first conductive material. The conductive line and the conductive via respectively having opposing sides in a vertical cross-section. First insulator material having k no greater than 4.0 is formed laterally outward of the opposing sides of the second conductive material of the conductive via selectively relative to the first conductive material of the opposing sides of the conductive line. The first insulator material is formed to a lateral thickness of at least 40 Angstroms in the vertical cross-section. Second insulator material having k greater than 4.0 is formed laterally outward of opposing sides of the first insulator material in the vertical cross-section. Additional method aspects, including structure independent of method of fabrication, are disclosed.

    Methods of forming a semiconductor device
    2.
    发明授权
    Methods of forming a semiconductor device 有权

    公开(公告)号：US11239240B2

    公开(公告)日：2022-02-01

    申请号：US16902783

    申请日：2020-06-16

    Applicant: Micron Technology, Inc.

    Inventor： Arzum F. Simsek-Ege ,  Guangjun Yang ,  Kuo-Chen Wang ,  Mohd Kamran Akhtar ,  Katsumi Koge

    IPC: G11C11/24 ,  H01L27/108 ,  H01L21/764 ,  G11C11/408 ,  G11C11/4091

    Abstract: A semiconductor device comprises semiconductive pillars; digit lines laterally between the semiconductive pillars; nitride caps vertically overlying the digit lines; nitride structures overlying surfaces of the nitride caps; redistribution material structures comprising upper portions overlying upper surfaces of the nitride caps and the nitride structures, and lower portions overlying upper surfaces of the semiconductive pillars; a low-K dielectric material laterally between the digit lines and the semiconductive pillars; air gaps laterally between the low-K dielectric material and the semiconductive pillars, and having upper boundaries below the upper surfaces of the nitride caps; and a nitride dielectric material laterally between the air gaps and the semiconductive pillars. Memory devices, electronic systems, and method of forming a semiconductor device are also described.

    Semiconductor devices comprising digit line contacts and related systems
    5.
    发明授权
    Semiconductor devices comprising digit line contacts and related systems 有权

    公开(公告)号：US10770466B2

    公开(公告)日：2020-09-08

    申请号：US16258296

    申请日：2019-01-25

    Applicant: Micron Technology, Inc.

    Inventor： Naoyoshi Kobayashi ,  Osamu Fujita ,  Katsumi Koge

    IPC: H01L27/108

    Abstract: A semiconductor device comprises laterally-neighboring word lines having respective word line caps thereon, an active region between the laterally-neighboring word lines and word line caps, an insulating material and a semiconductive material adjacent the word line caps, and a digit line contact between opposing substantially vertical surfaces of the semiconductive material, between opposing substantially vertical surfaces of the insulating material, adjacent to substantially horizontal surfaces of the word line caps, and between opposing substantially vertical surfaces of the word line caps. A transition surface extending between and connecting the substantially horizontal surface and the substantially vertical surface of the respective word line caps projects toward a longitudinal axis extending centrally through the digit line contact. Methods of forming the semiconductor device are also disclosed, as are electronic systems including the semiconductor device.

    METHODS OF FORMING SEMICONDUCTOR DEVICES, AND RELATED SEMICONDUCTOR DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS
    6.
    发明申请
    METHODS OF FORMING SEMICONDUCTOR DEVICES, AND RELATED SEMICONDUCTOR DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS 审中-公开

    公开(公告)号：US20200066729A1

    公开(公告)日：2020-02-27

    申请号：US16109215

    申请日：2018-08-22

    Applicant: Micron Technology, Inc.

    Inventor： Arzum F. Simsek-Ege ,  Guangjun Yang ,  Kuo-Chen Wang ,  Mohd Kamran Akhtar ,  Katsumi Koge

    IPC: H01L27/108 ,  H01L21/764 ,  G11C11/408

    Abstract: A semiconductor device comprises semiconductive pillars; digit lines laterally between the semiconductive pillars; nitride caps vertically overlying the digit lines; nitride structures overlying surfaces of the nitride caps; redistribution material structures comprising upper portions overlying upper surfaces of the nitride caps and the nitride structures, and lower portions overlying upper surfaces of the semiconductive pillars; a low-K dielectric material laterally between the digit lines and the semiconductive pillars; air gaps laterally between the low-K dielectric material and the semiconductive pillars, and having upper boundaries below the upper surfaces of the nitride caps; and a nitride dielectric material laterally between the air gaps and the semiconductive pillars. Memory devices, electronic systems, and method of forming a semiconductor device are also described.

    METHODS OF FORMING A SEMICONDUCTOR DEVICE
    10.
    发明申请
    METHODS OF FORMING A SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200312857A1

    公开(公告)日：2020-10-01

    申请号：US16902783

    申请日：2020-06-16

    Applicant: Micron Technology, Inc.

    Inventor： Arzum F. Simsek-Ege ,  Guangjun Yang ,  Kuo-Chen Wang ,  Mohd Kamran Akhtar ,  Katsumi Koge

    IPC: H01L27/108 ,  H01L21/764 ,  G11C11/408

    Abstract: A semiconductor device comprises semiconductive pillars; digit lines laterally between the semiconductive pillars; nitride caps vertically overlying the digit lines; nitride structures overlying surfaces of the nitride caps; redistribution material structures comprising upper portions overlying upper surfaces of the nitride caps and the nitride structures, and lower portions overlying upper surfaces of the semiconductive pillars; a low-K dielectric material laterally between the digit lines and the semiconductive pillars; air gaps laterally between the low-K dielectric material and the semiconductive pillars, and having upper boundaries below the upper surfaces of the nitride caps; and a nitride dielectric material laterally between the air gaps and the semiconductive pillars. Memory devices, electronic systems, and method of forming a semiconductor device are also described.

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