公开(公告)号：US20150063393A1

公开(公告)日：2015-03-05

申请号：US14537995

申请日：2014-11-11

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： Keiji IWATA ,  Ippei MATSUBARA ,  Takayuki KONA ,  Hiroshi WATANABE ,  Masashi YANAGASE

IPC: H01S5/183 ,  H01S5/34

CPC classification number: H01S5/183 ,  H01S5/0208 ,  H01S5/02276 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/34 ,  H01S5/3432 ,  H01S5/423

Abstract: A vertical cavity surface emitting laser includes a base substrate formed by a semi-insulating semiconductor, a light-emitting region multilayer portion including an N-type semiconductor contact layer, an N-type semiconductor multilayer-film reflecting layer, an N-type semiconductor clad layer, an active layer provided with a quantum well, a P-type semiconductor clad layer, a P-type semiconductor multilayer-film reflecting layer, and a P-type semiconductor contact layer, which are formed on the surface of the base substrate sequentially, an anode electrode formed on the surface of the P-type semiconductor contact layer, and a cathode electrode that is connected to the N-type semiconductor clad layer. The cathode electrode is formed on the base substrate at the side of the light-emitting region multilayer portion. A groove is formed among respective vertical cavity surface emitting lasers.

Abstract translation: 垂直腔表面发射激光器包括由半绝缘半导体形成的基底衬底，包括N型半导体接触层的发光区域多层部分，N型半导体多层膜反射层，N型半导体层 包覆层，设置有量子阱的有源层，P型半导体包覆层，P型半导体多层膜反射层和P型半导体接触层，其形成在基板的表面上 依次形成在P型半导体接触层的表面上的阳极电极和与N型半导体覆盖层连接的阴极电极。 阴极在发光区域多层部分侧的基底基板上形成。 在相应的垂直腔表面发射激光器之间形成凹槽。

公开(公告)号：US20160156157A1

公开(公告)日：2016-06-02

申请号：US15002607

申请日：2016-01-21

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： Ippei MATSUBARA ,  Takayuki KONA ,  Keiji IWATA

IPC: H01S5/42 ,  H01S5/022 ,  H01S5/187 ,  H01S5/40 ,  H01S5/02 ,  H01S5/042 ,  H01S5/00

CPC classification number: H01S5/423 ,  H01L2224/24 ,  H01S5/0042 ,  H01S5/0208 ,  H01S5/02276 ,  H01S5/042 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/187 ,  H01S5/4018 ,  H01S2301/176

Abstract: A VCSEL array includes a base substrate, a plurality of VCSEL devices and an inter-device line. Each of the plurality of VCSEL devices is disposed on a front side of the base substrate. The inter-device line connects two of the plurality of VCSEL devices that are adjacent to each other, the two VCSEL devices being connected in series such that forward directions of the two VCSEL devices are the same. An insulating groove that electrically insulates the two VCSEL devices is formed on the base substrate.

Abstract translation: VCSEL阵列包括基底基板，多个VCSEL装置和装置间线。 多个VCSEL装置中的每一个设置在基底基板的前侧。 设备间线路连接彼此相邻的多个VCSEL设备中的两个，两个VCSEL设备串联连接，使得两个VCSEL设备的正向相同。 在基底基板上形成使两个VCSEL器件电绝缘的绝缘槽。

公开(公告)号：US20160141839A1

公开(公告)日：2016-05-19

申请号：US15002682

申请日：2016-01-21

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： Ippei MATSUBARA ,  Takayuki KONA ,  Keiji IWATA

IPC: H01S5/42 ,  H01S5/40 ,  H01S5/00 ,  H01S5/042

CPC classification number: H01S5/423 ,  H01L2224/24 ,  H01S5/0042 ,  H01S5/02276 ,  H01S5/042 ,  H01S5/18311 ,  H01S5/4018 ,  H01S2301/176

Abstract: A VCSEL array includes a base substrate, VCSEL element columns arranged in a row direction (y direction) on a front-surface side of the base substrate and parallel wiring lines that connect the VCSEL element columns in parallel with each other. Each of the VCSEL element columns includes a plurality of VCSEL elements arranged in a column direction (x direction) and a plurality of series wiring lines. The plurality of series wiring lines serially connect every two VCSEL elements that are adjacent to each other in the column direction among the plurality of VCSEL elements in such an orientation that the forward directions of the two VCSEL elements match. Insulating grooves are formed on the base substrate. The insulating grooves electrically insulate the VCSEL element columns from each other. The insulating grooves electrically insulate the VCSEL elements from each other.

Abstract translation: VCSEL阵列包括基底基板，在基板的前表面侧上沿行方向（y方向）排列的VCSEL元件列和将VCSEL元件列彼此并联连接的平行布线。 每个VCSEL元件列包括沿列方向（x方向）排列的多个VCSEL元件和多个串联布线。 多个串联布线沿着两个VCSEL元件的正向相匹配的方向将多个VCSEL元件之间沿列方向相邻的每两个VCSEL元件串联连接。 绝缘槽形成在基底基板上。 绝缘槽将VCSEL元件柱彼此电绝缘。 绝缘槽将VCSEL元件彼此电绝缘。

公开(公告)号：US20150311675A1

公开(公告)日：2015-10-29

申请号：US14737103

申请日：2015-06-11

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： Keiji IWATA ,  Ippei MATSUBARA ,  Takayuki KONA ,  Hiroshi WATANABE ,  Masashi YANAGASE

IPC: H01S5/183 ,  H01S5/343 ,  H01S5/042

CPC classification number: H01S5/18394 ,  H01S5/0208 ,  H01S5/0421 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18383 ,  H01S5/3432 ,  H01S2301/176

Abstract: Provided are a base substrate made of a semi-insulating semiconductor; an emission region multilayer unit formed on a surface of the base substrate and including each of an N-type semiconductor contact layer, an N-type DBR layer, an active layer, a P-type semiconductor DBR layer, and a P-type semiconductor contact layer; an anode electrode connected to the P-type semiconductor contact layer; and a cathode electrode formed on a surface side of the base substrate and connected to the N-type semiconductor contact layer. The N-type DBR layer is formed of 15 or more pairs of layers with different compositions laminated on each other. Through this configuration, a vertical-cavity surface-emitting laser that can suppress an occurrence of a defect caused by crystal missing arising from the base substrate can be provided at reduced cost.

Abstract translation: 提供由半绝缘半导体制成的基底基板; 形成在所述基底基板的表面上并且包括N型半导体接触层，N型DBR层，有源层，P型半导体DBR层和P型半导体中的每一个的发射区域多层单元 接触层; 连接到P型半导体接触层的阳极; 以及形成在所述基底基板的表面侧并与所述N型半导体接触层连接的阴极电极。 N型DBR层由具有不同组成的15层或更多层相互层叠而形成。 通过这种构造，可以以降低的成本提供能够抑制由基底基板引起的晶体缺陷引起的缺陷的发生的垂直腔表面发射激光器。

公开(公告)号：US20150063394A1

公开(公告)日：2015-03-05

申请号：US14538007

申请日：2014-11-11

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： Keiji IWATA ,  Ippei MATSUBARA ,  Takayuki KONA ,  Hiroshi WATANABE ,  Masashi YANAGASE

IPC: H01S5/183 ,  H01S5/34

CPC classification number: H01S5/183 ,  H01L24/75 ,  H01L24/83 ,  H01S5/0208 ,  H01S5/02276 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/34 ,  H01S5/3432 ,  H01S5/423

Abstract: A cathode electrode, cathode pad electrodes, cathode wiring electrodes, an anode electrode, an anode pad electrode, and an anode wiring electrode are disposed on the surface of a vertical-cavity surface-emitting laser device. A light-emitting-region multilayer portion having active layers sandwiched by clad layers and DBR layers is formed directly below the anode electrode. A region where the light-emitting-region multilayer portion is formed serves as a light-emitting region. The light-emitting region is positioned closer to one end of the first direction than is a suction region onto which a flat collet sucks with respect to the first direction, in such a way that the light-emitting region is substantially in contact with or spaced a predetermined distance from the suction region.

Abstract translation: 阴极电极，阴极焊盘电极，阴极布线电极，阳极电极，阳极焊盘电极和阳极引线电极设置在垂直腔表面发射激光器件的表面上。 在阳极电极正下方形成具有被覆层和DBR层夹持的活性层的发光区域多层部分。 形成发光 - 区域多层部分的区域用作发光区域。 发光区域比平坦夹头相对于第一方向吸入的吸引区域更靠近第一方向的一端，使得发光区域基本上接触或间隔开 距离抽吸区域预定的距离。

公开(公告)号：US20140341246A1

公开(公告)日：2014-11-20

申请号：US14447528

申请日：2014-07-30

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： Hiroshi WATANABE ,  Atsushi TATE ,  Takayuki KONA ,  Ippei MATSUBARA ,  Keiji IWATA

IPC: H01S5/183 ,  H01S5/343 ,  H01S5/187

CPC classification number: H01S5/18377 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/187 ,  H01S5/3201 ,  H01S5/3213 ,  H01S5/3432 ,  H01S2301/176

Abstract: A vertical cavity surface emitting laser includes an active layer that includes a quantum well, a first cladding layer and a second cladding layer between which the active layer is interposed. A first multilayer reflector layer is arranged on a side of the first cladding layer opposite to that on which the active layer is arranged. A second multilayer reflector layer is arranged on a side of the second cladding layer opposite to that on which the active layer is arranged. At least one of the first cladding layer and the second cladding layer includes a low activity energy layer having a band gap that is smaller than a smallest band gap of an optical confinement layer for forming the quantum well of the active layer and larger than a band gap of the quantum well.

Abstract translation: 垂直腔表面发射激光器包括有源层，其包括量子阱，第一覆层和第二覆层，其间插入有源层。 第一多层反射器层设置在与设置有源层的第一覆层相反的一侧。 第二多层反射层设置在第二覆层的与有源层布置的相反侧的一侧。 第一包层和第二包层中的至少一个包括具有小于用于形成有源层的量子阱的光限制层的最小带隙的带隙的低活性能量层，并且大于带 量子阱的差距。