公开(公告)号：US20140038431A1

公开(公告)日：2014-02-06

申请号：US14112012

申请日：2012-03-29

Applicant: Michael W. Stowell ,  Majeed A. Foad ,  Ralf Hofmann ,  Wolfgang R. Aderhold ,  Stephen Moffatt

Inventor： Michael W. Stowell ,  Majeed A. Foad ,  Ralf Hofmann ,  Wolfgang R. Aderhold ,  Stephen Moffatt

IPC: H01L21/263 ,  H05B6/70

CPC classification number: H01L21/263 ,  H01L21/324 ,  H01L21/67115 ,  H05B6/702 ,  H05B6/708

Abstract: Methods and apparatus for radiation processing of semiconductor substrates using microwave or millimeter wave energy are provided. The microwave or millimeter wave energy may have a frequency between about 600 MHz and about 1 THz. Alternating current from a magnetron is coupled to a leaky microwave emitter that has an inner conductor and an outer conductor, the outer conductor having openings with a dimension smaller than a wavelength of the emitted radiation. The inner and outer conductors are separated by an insulating material. Interference patterns produced by the microwave emissions may be uniformized by phase modulating the power to the emitter and/or by frequency modulating the frequency of the power itself. Power from a single generator may be divided to two or more emitters by a power divider.

Abstract translation: 提供了使用微波或毫米波能量的半导体衬底的辐射处理方法和装置。 微波或毫米波能量可以具有在约600MHz和约1THz之间的频率。 来自磁控管的交流电耦合到具有内部导体和外部导体的泄漏的微波发射器，该外部导体具有尺寸小于所发射的辐射的波长的开口。 内外导体由绝缘材料分开。 由微波发射产生的干扰模式可以通过相位调制发射器的功率和/或通过频率调制电源本身的频率而被均匀化。 来自单个发电机的功率可以由功率分配器划分为两个或更多个发射器。

公开(公告)号：US20120302048A1

公开(公告)日：2012-11-29

申请号：US13461476

申请日：2012-05-01

Applicant: Kartik Santhanam ,  Yen B. Ta ,  Matthew D. Scotney-Castle ,  Manoj Vellaikal ,  Martin A. Hilkene ,  Peter I. Porshnev ,  Majeed A. Foad

Inventor： Kartik Santhanam ,  Yen B. Ta ,  Matthew D. Scotney-Castle ,  Manoj Vellaikal ,  Martin A. Hilkene ,  Peter I. Porshnev ,  Majeed A. Foad

IPC: H01L21/265

CPC classification number: H01L21/2236 ,  H01J37/32412 ,  H01L21/32155

Abstract: Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, the method for implanting ions into a substrate by a plasma immersion ion implantation process includes providing a substrate into a processing chamber, flowing a gas mixture including a hydride dopant gas and a fluorine-containing dopant gas into the processing chamber, wherein the hydride dopant gas comprises P-type hydride dopant gas, N-type hydride dopant gas, or a combination thereof, and the fluorine-containing dopant gas comprises a P-type or N-type dopant atom, generating a plasma from the gas mixture, and co-implanting ions from the gas mixture into a surface of the substrate.

Abstract translation: 提供了通过等离子体浸没离子注入工艺将离子注入衬底的方法。 在一个实施例中，通过等离子体浸入离子注入工艺将离子注入衬底的方法包括将衬底提供到处理室中，将包括氢化物掺杂剂气体和含氟掺杂剂气体的气体混合物流入处理室，其中 氢化物掺杂剂气体包括P型氢化物掺杂气体，N型氢化物掺杂气体或其组合，并且含氟掺杂剂气体包括P型或N型掺杂剂原子，从气体混合物产生等离子体 并且将来自气体混合物的离子共注入到衬底的表面中。

公开(公告)号：US08003500B2

公开(公告)日：2011-08-23

申请号：US12503697

申请日：2009-07-15

Applicant: Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

Inventor： Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

IPC: H01L21/42

CPC classification number: H01J37/32477 ,  H01J37/32412 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/16

Abstract: In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.

Abstract translation: 在等离子体浸没离子注入工艺中，增加了植入前调节层的厚度（允许植入一系列晶片而不更换调味料层），而不会因调节层厚度的增加而损失晶片夹紧静电力。 这是通过首先等离子体排出来自厚调味层的残留静电电荷来实现的。 在处理每个晶片之后，可以通过分批补充调味层来进一步增加可以使用相同调味料处理的晶片数量，其后可以在加工下一个晶片之前进行补充调味料的短暂等离子体放电。

公开(公告)号：US20110159673A1

公开(公告)日：2011-06-30

申请号：US13038199

申请日：2011-03-01

Applicant: Hiroji Hanawa ,  Seon-Mee Cho ,  Majeed A. Foad

Inventor： Hiroji Hanawa ,  Seon-Mee Cho ,  Majeed A. Foad

IPC: H01L21/22

CPC classification number: H01L21/2236 ,  C23C16/45536 ,  C23C16/505 ,  C23C16/56

Abstract: Embodiments of the invention provide a novel apparatus and methods for forming a conformal doped layer on the surface of a substrate. A substrate is provided to a process chamber, and a layer of dopant source material is deposited by plasma deposition, atomic layer deposition, or plasma-assisted atomic layer deposition. The substrate is then subjected to thermal processing to activate and diffuse dopants into the substrate surface.

Abstract translation: 本发明的实施例提供了一种用于在衬底的表面上形成共形掺杂层的新型设备和方法。 将衬底提供到处理室，并且通过等离子体沉积，原子层沉积或等离子体辅助原子层沉积沉积掺杂剂源材料层。 然后对衬底进行热处理以激活并将掺杂剂扩散到衬底表面中。

公开(公告)号：US07838399B2

公开(公告)日：2010-11-23

申请号：US11748876

申请日：2007-05-15

Applicant: Peter Porshnev ,  Majeed A. Foad

Inventor： Peter Porshnev ,  Majeed A. Foad

IPC: H01L21/26 ,  H01L21/42

CPC classification number: H01L21/2236 ,  H01L29/66575

Abstract: Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting ions into a substrate includes providing a substrate into a processing chamber, generating a plasma from a gas mixture including a reacting gas and a etching gas in the chamber, adjusting the ratio between the reacting gas and the etching gas in the supplied gas mixture and implanting ions from the plasma into the substrate. In another embodiment, the method includes providing a substrate into a processing chamber, supplying a gas mixture including reacting gas and a halogen containing reducing gas into the chamber, forming a plasma from the gas mixture, gradually increasing the ratio of the etching gas in the gas mixture, and implanting ions from the gas mixture into the substrate.

Abstract translation: 提供了通过等离子体浸没离子注入工艺将离子注入衬底的方法。 在一个实施例中，用于将离子注入到衬底中的方法包括将衬底提供到处理室中，从腔室中的包括反应气体和蚀刻气体的气体混合物产生等离子体，调节反应气体与蚀刻物之间的比例 在所提供的气体混合物中的气体和从等离子体离子注入衬底。 在另一个实施方案中，该方法包括将基底提供到处理室中，将包含反应气体和含卤素的还原气体的气体混合物供应到室中，从气体混合物形成等离子体，逐渐增加蚀刻气体的比例 气体混合物，并将离子从气体混合物中注入衬底中。

公开(公告)号：US07811877B2

公开(公告)日：2010-10-12

申请号：US11778252

申请日：2007-07-16

Applicant: Sundar Ramamurthy ,  Majeed A. Foad

Inventor： Sundar Ramamurthy ,  Majeed A. Foad

IPC: H01L21/8238

CPC classification number: H01L29/7833 ,  H01L21/26513 ,  H01L21/823814 ,  H01L29/665

Abstract: Methods of processing silicon substrates to form metal silicide layers thereover having more uniform thicknesses are provided herein. In some embodiments, a method of processing a substrate includes providing a substrate having a plurality of exposed regions comprising silicon, wherein at least two of the plurality of exposed regions have a different rate of formation of a metal silicide layer thereover; doping at least one of the exposed regions to control the rate of formation of a metal silicide layer thereover; and forming a metal silicide layer upon the exposed regions of the substrate, wherein the metal silicide layer has a reduced maximum thickness differential between the exposed regions.

Abstract translation: 本文提供了处理硅衬底以形成具有更均匀厚度的金属硅化物层的方法。 在一些实施例中，处理衬底的方法包括提供具有包括硅的多个暴露区域的衬底，其中多个暴露区域中的至少两个具有与其上不同的金属硅化物层的形成速率; 掺杂至少一个暴露区域以控制其上的金属硅化物层的形成速率; 以及在所述衬底的所述暴露区域上形成金属硅化物层，其中所述金属硅化物层在所述暴露区域之间具有减小的最大厚度差。

公开(公告)号：US20100190324A1

公开(公告)日：2010-07-29

申请号：US12550142

申请日：2009-08-28

Applicant: MARTIN A. HILKENE ,  Kartik Santhanam ,  Yen B. Ta ,  Peter I. Porshnev ,  Majeed A. Foad

Inventor： MARTIN A. HILKENE ,  Kartik Santhanam ,  Yen B. Ta ,  Peter I. Porshnev ,  Majeed A. Foad

IPC: H01L21/265

CPC classification number: H01L21/2236 ,  H01L21/31138

Abstract: A method of plasma immersion ion implantation of a workpiece having a photoresist mask on its top surface prevents photoresist failure from carbonization of the photoresist. The method includes performing successive ion implantation sub-steps, each of the ion implantation sub-steps having a time duration over which only a fractional top portion of the photoresist layer is damaged by ion implantation. After each one of the successive ion implantation sub-steps, the fractional top portion of the photoresist is removed while leaving the remaining portion of the photoresist layer in place by performing an ashing sub-step. The number of the successive ion implantation sub-steps is sufficient to reach a predetermined ion implantation dose in the workpiece.

Abstract translation: 在其顶表面上具有光致抗蚀剂掩模的工件的等离子体浸没离子注入的方法防止光致抗蚀剂从光致抗蚀剂的碳化失效。 该方法包括执行连续的离子注入子步骤，每个离子注入子步骤具有仅通过离子注入损坏光致抗蚀剂层的仅部分顶部的持续时间。 在连续离子注入子步骤中的每一个之后，去除光致抗蚀剂的分数顶部，同时通过执行灰化子步骤留下光致抗蚀剂层的剩余部分就位。 连续离子注入子步骤的数量足以在工件中达到预定的离子注入剂量。

公开(公告)号：US20100112794A1

公开(公告)日：2010-05-06

申请号：US12606897

申请日：2009-10-27

Applicant: Matthew D. Scotney-Castle ,  Majeed A. Foad ,  Peter I. Porshnev

Inventor： Matthew D. Scotney-Castle ,  Majeed A. Foad ,  Peter I. Porshnev

IPC: H01L21/425

CPC classification number: H01L21/2236 ,  H01J37/32412

Abstract: Methods for implanting material into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting material into a substrate includes providing a substrate into a processing chamber, the substrate comprising a substrate surface having a material layer formed thereon, generating a first plasma of a non-dopant processing gas, exposing the material layer to the plasma of the non-dopant processing gas, generating a second plasma of a dopant processing gas including a reacting gas adapted to produce dopant ions, and implanting dopant ions from the plasma into the material layer. The method may further include a cleaning or etch process.

Abstract translation: 提供了通过等离子体浸没离子注入工艺将材料注入衬底的方法。 在一个实施例中，用于将材料注入衬底的方法包括将衬底提供到处理室中，所述衬底包括其上形成有材料层的衬底表面，产生非掺杂剂处理气体的第一等离子体，暴露材料层 涉及非掺杂剂处理气体的等离子体，产生掺杂剂处理气体的第二等离子体，所述掺杂剂处理气体包括适于产生掺杂剂离子的反应气体，以及将等离子体中的掺杂剂离子注入材料层。 该方法还可以包括清洁或蚀刻工艺。

公开(公告)号：US20100112793A1

公开(公告)日：2010-05-06

申请号：US12606877

申请日：2009-10-27

Applicant: Peter I. Porshnev ,  Matthew D. Scotney-Castle ,  Majeed A. Foad

Inventor： Peter I. Porshnev ,  Matthew D. Scotney-Castle ,  Majeed A. Foad

IPC: H01L21/265 ,  H01L21/302 ,  H01L21/322

CPC classification number: H01L21/2236 ,  H01J37/32412

Abstract: Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting ions into a substrate includes providing a substrate into a processing chamber, the substrate comprising substrate surface having one or more features formed therein and each feature having one or more horizontal surfaces and one or more vertical surfaces, generating a plasma from a gas mixture including a reacting gas adapted to produce ions, depositing a material layer on the substrate surface and on at least one horizontal surface of the substrate feature, implanting ions from the plasma into the substrate by an isotropic process into at least one horizontal surface and into at least one vertical surface, and etching the material layer on the substrate surface and the at least one horizontal surface by an anisotropic process.

Abstract translation: 提供了通过等离子体浸没离子注入工艺将离子注入衬底的方法。 在一个实施例中，用于将离子注入到衬底中的方法包括将衬底提供到处理室中，所述衬底包括具有形成在其中的一个或多个特征的衬底表面，并且每个特征具有一个或多个水平表面和一个或多个垂直表面， 来自包括适于产生离子的反应气体的气体混合物的等离子体，在衬底表面上沉积材料层和在衬底特征的至少一个水平表面上，通过各向同性方法将等离子体离子注入到衬底中至少 一个水平表面并且进入至少一个垂直表面，并且通过各向异性工艺蚀刻衬底表面上的材料层和至少一个水平表面。

公开(公告)号：US07691755B2

公开(公告)日：2010-04-06

申请号：US11748783

申请日：2007-05-15

Applicant: Shijian Li ,  Lily L. Pang ,  Majeed A. Foad ,  Seon-Mee Cho

Inventor： Shijian Li ,  Lily L. Pang ,  Majeed A. Foad ,  Seon-Mee Cho

IPC: H01L21/00 ,  H01L21/26

CPC classification number: H01L21/2236 ,  H01J37/32412 ,  H01J37/3244 ,  H01J37/32449

Abstract: A method is provided for performing plasma immersion ion implantation with a highly uniform seasoning film on the interior of a reactor chamber having a ceiling and a cylindrical side wall and a wafer support pedestal facing the ceiling. The method includes providing a gas distribution ring with plural gas injection orifices on a periphery of a wafer support pedestal, the orifices facing radially outwardly from the wafer support pedestal. Silicon-containing gas is introduced through the gas distribution orifices of the ring to establish a radially outward flow pattern of the silicon-containing gas. The reactor includes pairs of conduit ports in the ceiling adjacent the side wall at opposing sides thereof and respective external conduits generally spanning the diameter of the chamber and coupled to respective pairs of the ports. The method further includes injecting oxygen gas through the conduit ports into the chamber to establish an axially downward flow pattern of oxygen gas in the chamber. RF power is coupled into the interior of each of the conduits to generate a toroidal plasma current of SixOy species passing through the chamber to deposit a seasoning layer of a SixOy material on surfaces within the chamber, while leaving the pedestal without a wafer so as to expose a wafer support surface of the pedestal.

Abstract translation: 提供了一种用于在具有天花板和圆柱形侧壁的反应室的内部以及面向天花板的晶片支撑台架上执行具有高度均匀的调味膜的等离子体浸没离子注入的方法。 该方法包括在晶片支撑基座的外围提供具有多个气体注入孔的气体分配环，所述孔从晶片支撑基座径向向外。 含硅气体通过环的气体分配孔引入，以建立含硅气体的径向向外流动图案。 反应器包括在天花板中的相邻侧壁处的相对侧的导管端口对，以及相应的外部导管，其通常跨越室的直径并且耦合到相应的端口对。 该方法还包括将氧气通过导管端口注入到腔室中，以在腔室中建立轴向向下的氧气气流模式。 RF功率耦合到每个导管的内部，以产生通过该室的六十种物质的环形等离子体电流，以在室内的表面上沉积SixOy材料的调味层，同时离开基座而没有晶片，以便 露出基座的晶片支撑表面。