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    Light-emitting diode and process for producing the same
    1.
    发明申请
    Light-emitting diode and process for producing the same 审中-公开
    发光二极管及其制造方法

    公开(公告)号：US20060273324A1

    公开(公告)日：2006-12-07

    申请号：US10566211

    申请日：2004-07-26

    申请人： Makoto Asai ,  Shiro Yamazaki ,  Takahiro Kozawa ,  Mitsuhisa Narukawa

    发明人： Makoto Asai ,  Shiro Yamazaki ,  Takahiro Kozawa ,  Mitsuhisa Narukawa

    IPC分类号： H01L21/00 ,  H01L33/00

    CPC分类号： H01L33/20 ,  H01L24/32 ,  H01L33/32 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2924/10158 ,  H01L2924/00014 ,  H01L2924/00

    摘要： The back surface of a semiconductor crystal substrate 102 which has a thickness of about 150 μm and is made of undoped GaN bulk crystal consists of a polished plane 102a which is flattened through dry-etching and a grinded plane 102b which is formed in a taper shape and is flattened through dry-etching. On about 10 nm in thickness of GaN n-type clad layer (low carrier concentration layer) 104, about 2 nm in thickness of Al0.005In0.045Ga0.95N well layer 51 and about 18 nm in thickness of Al0.12Ga0.88N barrier layer 52 are deposited alternately as an active layer 105 which emits ultraviolet light and has MQW structure comprising 5 layers in total. Before forming a negative electrode (n-electrode c) on the polished plane of the semiconductor substrate a, the polished plane is dry-etched.

    摘要翻译： 半导体晶体基板102的背面，其厚度为约150μm，由未掺杂的GaN体晶体制成，其由经干蚀刻而平坦化的抛光平面102a和形成在其中的研磨平面102b 锥形，并通过干蚀刻变平。 在GaN n型覆层（低载流子浓度层）104的厚度约为10nm的情况下，厚度为约0.01nm的Al 0.005 In 0.95 Ga 0.95 N阱层51和厚度约为18nm的Al 0.12 N Ga 0.88 N阻挡层52交替地沉积为发射紫外光的有源层105和 总共有5层MQW结构。 在半导体衬底a的抛光平面上形成负电极（n电极c）之前，对该抛光平面进行干式蚀刻。

    Light-emitting semiconductor device using group III nitrogen compound
    4.
    发明申请
    Light-emitting semiconductor device using group III nitrogen compound 审中-公开
    使用III族氮化合物的发光半导体器件

    公开(公告)号：US20110101412A1

    公开(公告)日：2011-05-05

    申请号：US12929231

    申请日：2011-01-10

    申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

    发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

    IPC分类号： H01L33/32

    CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40

    摘要： A method of producing a light-emitting semiconductor device of a group III nitride compound includes forming an N-layer of an N-type conduction, the N-layer comprising gallium nitride, forming a high carrier concentration N+-layer satisfying the formula (Alx3Ga1-x3)y3In1-y3N, wherein 0≦x3≦1, 0≦y3≦1 and 0≦x3+y3≦1, on the N-layer, forming an emission layer of a group III nitride compound semiconductor satisfying the formula, Alx1Gay1In1-x1-y1N, where 0≦x1≦1, 0≦y1≦1 and 0≦x1+y1≦1 on the high carrier concentration layer N+layer, doping Si and Zn into the emission layer, forming a P-layer of a P-type conduction, on the emission layer, the P-layer including aluminum gallium nitride satisfying the formula Alx2Ga1-x2N, wherein 0≦x2≦1, and forming a contact layer of a P-type conduction, on the P-type layer, the contact layer including gallium nitride.

    摘要翻译： 制造III族氮化物化合物的发光半导体器件的方法包括形成N型导电的N层，N层包括氮化镓，形成满足式（Al x Ga 1 -x3）y3In1-y3N，其中在N层上形成满足公式的III族氮化物化合物半导体的发射层Al x1Gay1In1，其中0和nlE; x3和nlE; 1,0和n1E; y3和nlE; 1和0＆lt; n1E; x3 + y3＆ -x1-y1N，其中0＆nlE; x1＆nlE; 1,0和nlE; y1＆nlE; 1和0＆nlE; x1 + y1＆nlE; 1在高载流子浓度层N +层上，将Si和Zn掺杂到发射层中，形成P层 在发射层上的P型导电，包含满足式Al x Ga 1-x 2 N的氮化铝镓的P层，其中0＆lt; n1E; x2＆nlE; 1，并且在P型上形成P型导电的接触层 层，接触层包括氮化镓。

    Light-emitting semiconductor device using group III nitrogen compound
    5.
    发明授权
    Light-emitting semiconductor device using group III nitrogen compound 有权
    使用III族氮化合物的发光半导体器件

    公开(公告)号：US07867800B2

    公开(公告)日：2011-01-11

    申请号：US12003173

    申请日：2007-12-20

    申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

    发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

    IPC分类号： H01L21/00

    CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40

    摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1−x3)y3In1−y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1−x2)y2In1−y2N emission layer (5), and a Mg-doped (Alx1Ga1−x1)y1In1−y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.

    摘要翻译： 发光半导体器件（10）连续地包括蓝宝石衬底（1），AlN缓冲层（2），高载流子（n型）掺杂的硅（Si）掺杂的GaN n +层（3）， 具有高载流子（n型）浓度的Si掺杂（Al x Ga 1-x 3）y 3 In 1-y 3 N n +层（4），锌（Zn）和Si掺杂（Alx2Ga1-x2）y2In1-y2N发射层（5） 和Mg掺杂（Al x Ga 1-x 1）y 1 In 1-y 1 N p层（6）。 AlN层（2）的厚度为500埃。 GaN n +层（3）的厚度约为2.0μm，电子浓度为2×1018 / cm3。 n +层（4）的厚度约为2.0μm，电子浓度为2×1018 / cm3。 发射层（5）的厚度约为0.5μm。 p层6的厚度约为1.0μm，空穴浓度为2×1017 / cm3。 镍电极（7,8）分别连接到p层（6）和n +层（4）。 一个凹槽（9）使电极（7,8）电绝缘。 选择各层（4,5,6）中的Al，Ga和In的组成比以满足n +层（3）中的GaN的晶格常数。 LED（10）被设计为提高发光强度并获得更纯的蓝色。

    Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities
    7.
    发明授权
    Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities 失效
    使用III族氮化合物的发光半导体器件具有掺杂有供体和受主杂质的发射层

    公开(公告)号：US6005258A

    公开(公告)日：1999-12-21

    申请号：US806646

    申请日：1997-02-26

    申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

    发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

    IPC分类号： H01L33/00 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L29/06

    CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/40 ,  H01L33/382 ,  H01L33/385

    摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.x3 Ga.sub.1-x3).sub.y3 In.sub.1-y3 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N emission layer (5), and a Mg-doped (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N p-layer (6). The AlN layer (2)--is 500 .ANG. in thickness. The GaN N.sup.+ -layer (3) is about 2.0 .mu.m in thickness and has an electron concentration of about 2.times.10.sup.18 /cm.sup.3. The n.sup.+ -layer (4) is about 2.0 .mu.m in thickness and has an electron concentration of about 2.times.10.sup.18 /cn.sup.3. The emission layer (5) is about 0.5 .mu.m in thickness. The p-layer 6 is about 1.0 .mu.m in thickness and has a hole concentration of about 2.times.10.sup.17 /cm.sup.3. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.+ -layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8) from each other. The composition ration of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n.sup.+ -layer (3). The LED (10) is designed to improve luminous intensity and to obtain a purer blue color.

    摘要翻译： 发光半导体器件（10）连续地包括蓝宝石衬底（1），AlN缓冲层（2），高载流子（n型）掺杂的硅（Si）掺杂的GaN n +层（3）， 具有高载流子（n型）浓度的Si掺杂（Al x Ga 1-x 3）y 3 In 1-y 3 N n +层（4），锌（Zn）和Si掺杂（Alx2Ga1-x2）y2In1-y2N发射层（5） 和Mg掺杂（Al x Ga 1-x 1）y 1 In 1-y 1 N p层（6）。 AlN层（2） - 厚度为500 ANGSTROM。 GaN N +层（3）的厚度约为2.0μm，电子浓度约为2×1018 / cm3。 n +层（4）的厚度约为2.0μm，电子浓度约为2×10 18 / cn 3。 发射层（5）的厚度约为0.5μm。 p层6的厚度为约1.0μm，并且具有约2×10 17 / cm 3的空穴浓度。 镍电极（7,8）分别连接到p层（6）和n +层（4）。 沟槽（9）将电极（7,8）彼此电绝缘。 选择各层（4,5,6）中的Al，Ga和In的组成比来满足n +层（3）中的GaN的晶格常数。 LED（10）被设计成改善发光强度并获得更纯的蓝色。

    Light-emitting semiconductor device using group III nitrogen compound
    8.
    发明申请
    Light-emitting semiconductor device using group III nitrogen compound 有权
    使用III族氮化合物的发光半导体器件

    公开(公告)号：US20080173880A1

    公开(公告)日：2008-07-24

    申请号：US12003173

    申请日：2007-12-20

    申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

    发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40

    摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.

    摘要翻译： 发光半导体器件（10）连续地包括蓝宝石衬底（1），AlN缓冲层（2），高载体的硅（Si）掺杂GaN n + +层（3） （n型）浓度，Si掺杂（Al x3 Ga 1-x 3）y 3在1-y 3中， 具有高载流子（n型）浓度的氮（Zn）和Si掺杂（Al 2 x 2 Ga 2） 1-x2 Y2在1-y2 N发射层（5）中，以及Mg掺杂（Al x1 Ga） 在1-y1 N p层（6）中。 AlN层（2）的厚度为500埃。 GaN n + +（3）具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 n + +层（4）具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 发射层（5）的厚度约为0.5μm。 p层6具有约1.0μm厚度和2×10 17 / cm 3孔浓度。 镍电极（7,8）分别连接到p层（6）和n + +层（4）。 一个凹槽（9）使电极（7,8）电绝缘。 选择各层（4,5,6）中的Al，Ga和In的组成比以满足n +层（3）中的GaN的晶格常数。 LED（10）被设计为提高发光强度并获得更纯的蓝色。